FGH75N60UF 600 V, 75 A Field Stop IGBT

March 2013

FGH75N60UF
600 V, 75 A Field Stop IGBT
Features General Description
High Current Capability Using novel field stop IGBT technology, Fairchilds field stop
Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
High Input Impedance
ing losses are essential.
Fast Switching
RoHS Compliant

Applications
Solar Inverter, UPS, Welder, PFC

E
C
G

COLLECTOR
(FLANGE)

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage 20 V
Collector Current @ TC = 25oC 150 A
IC
Collector Current @ TC = 100oC 75 A
ICM (1) Pulsed Collector Current @ TC = 25oC 225 A
Maximum Power Dissipation @ TC = 25oC 452 W
PD
Maximum Power Dissipation @ TC = 100oC 181 W
oC
TJ Operating Junction Temperature -55 to +150
oC
Tstg Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering oC
TL 300
Purposes, 1/8 from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
oC/W
RJC(IGBT) Thermal Resistance, Junction to Case - 0.276
oC/W
RJA Thermal Resistance, Junction to Ambient - 40

2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH75N60UF Rev. C0
 FGH75N60UF 600 V, 75 A Field Stop IGBT
Package Marking and Ordering Information
Max Qty
Packaging
Device Marking Device Package Type Qty per Tube per Box
FGH75N60UF FGH75N60UFTU TO-247 Tube 30ea -

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A - 0.75 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 4.0 5.0 6.5 V
IC = 75 A, VGE = 15 V - 1.9 2.4 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 75 A, VGE = 15 V,
- 2.15 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 3850 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 375 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 147 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 27 - ns
tr Rise Time - 70 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 75 A, - 128 - ns
tf Fall Time RG = 3 , VGE = 15 V, - 30 80 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 3.05 - mJ
Eoff Turn-Off Switching Loss - 1.35 - mJ
Ets Total Switching Loss - 4.4 - mJ
td(on) Turn-On Delay Time - 27 - ns
tr Rise Time - 74 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 75 A, - 153 - ns
tf Fall Time RG = 3 , VGE = 15 V, - 35 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 3.6 - mJ
Eoff Turn-Off Switching Loss - 1.8 - mJ
Ets Total Switching Loss - 5.4 - mJ
Qg Total Gate Charge - 250 - nC
VCE = 400 V, IC = 75 A,
Qge Gate to Emitter Charge - 30 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 130 - nC

2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH75N60UF Rev. C0
 FGH75N60UF 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level

2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH75N60UF Rev. C0
 FGH75N60UF 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

Figure 11. SOA Characteristics Figure 12. Load Current vs. Frequency

2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH75N60UF Rev. C0
 FGH75N60UF 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance

Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current

Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current

2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH75N60UF Rev. C0
 FGH75N60UF 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Turn off Switching SOA Characteristics

Figure 20. Transient Thermal Impedance of IGBT

PDM
t1
t2

2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH75N60UF Rev. C0
 FGH75N60UF 600 V, 75 A Field Stop IGBT
Mechanical Dimensions

TO-247A03

Dimensions in Millimeters

2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH75N60UF Rev. C0
 FGH75N60UF 600 V, 75 A Field Stop IGBT
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I64

2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH75N60UF Rev. C0
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