Beruflich Dokumente
Kultur Dokumente
March 2011
FGH60N60SMD tm
600V, 60A Field Stop IGBT
Features General Description
Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series
Positive Temperaure Co-efficient for easy parallel operating of Field Stop IGBTs offer the optimum performance for Solar
Inverter, UPS, SMPS, IH and PFC applications where low con-
High current capability
duction and switching losses are essential.
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A
High input impedance
Fast switching
Tighten Parameter Distribution
RoHS compliant
Applications
Solar Inverter, UPS, SMPS, PFC
Induction Heating
E C
C
G
COLLECTOR
(FLANGE) E
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A 600 - - V
BVCES Temperature Coefficient of Breakdown
TJ Voltage
VGE = 0V, IC = 250A - 0.6 - V/oC
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 3.5 4.5 6.0 V
IC = 60A, VGE = 15V - 1.9 2.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60A, VGE = 15V,
- 2.1 - V
TC = 175oC
Dynamic Characteristics
Cies Input Capacitance - 2915 - pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance - 270 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 85 - pF
Switching Characteristics
td(on) Turn-On Delay Time - 18 27 ns
tr Rise Time - 47 70 ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 60A, - 104 146 ns
tf Fall Time RG = 3, VGE = 15V, - 50 68 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.26 1.94 mJ
Eoff Turn-Off Switching Loss - 0.45 0.6 mJ
Ets Total Switching Loss - 1.71 2.54 mJ
td(on) Turn-On Delay Time - 18 - ns
tr Rise Time - 41 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 60A, - 115 - ns
tf Fall Time RG = 3, VGE = 15V, - 48 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 2.1 - mJ
Eoff Turn-Off Switching Loss - 0.78 - mJ
Ets Total Switching Loss - 2.88 - mJ
120 120
90 90
60 VGE = 8V
60
VGE = 8V
30 30
0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
o
TC = 25 C
Collector Current, IC [A]
o
TC = 175 C
o
TC = 175 C 120
120
90
90
60
60
30
30
0
0 2 4 6 8 10 12
0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5
20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]
VGE = 15V o
Collector-Emitter Voltage, VCE [V]
TC = -40 C
3.0 120A 16
2.5
12
60A
2.0
8
IC = 30A 60A
120A
1.5
4
IC = 30A
1.0
25 50 75 100 125 150 175 0
o 4 8 12 16 20
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20
20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]
T C = 25 C TC = 175 C
12
12
8
8
o
TC = 25 C 12
VCC = 200V
5000
Capacitance [pF]
300V
4000 9
400V
Cies
3000
6
2000
Coes 3
1000
Cres
0 0
0.1 1 10 30 0 40 80 120 160 200
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
10 ms
Switching Time [ns]
10 DC
40
td(on)
1
Common Emitter
20 VCC = 400V, VGE = 15V
*Notes:
IC = 60A
0.1 o
1. TC = 25 C o
TC = 25 C
o
2. TJ = 175 C o
TC = 175 C
3. Single Pulse
0.01 10
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ ]
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
6000 1000
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 3
IC = 60A o
TC = 25 C
o
1000 TC = 25 C o
TC = 175 C tr
Switching Time [ns]
td(on)
100 10
tf
10 1
0 10 20 30 40 50 0 30 60 90 120
Gate Resistance, RG [] Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
1000 5
Eon
td(off)
Switching Loss [mJ]
Switching Time [ns]
100
1
tf Eoff
Common Emitter
10 VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 3 IC = 60A
o o
TC = 25 C TC = 25 C
o o
TC = 175 C TC = 175 C
1 0.1
0 30 60 90 120 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [ ]
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
10 300
100
Eon
Collector Current, IC [A]
Switching Loss [mJ]
Eoff
10
0.1 Common Emitter
VGE = 15V, RG = 3
o
TC = 25 C Safe Operating Area
o o
TC = 175 C VGE = 15V, TC = 175 C
0.01 1
0 30 60 90 120 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]
Figure 19. Current Derating Figure 20. Load Current Vs. Frequency
130 180
120 Common Emitter Square Wave
VGE = 15V 160 o
110 TJ < 175 C, D = 0.5, VCE = 400V
100 VGE = 15/0V, RG = 3
Collector Current, IC [A]
140
60
80
50 o
Tc = 100 C
40 60
30 40
20
10 20
0
25 50 75 100 125 150 175 1k 10k 100k 1M
o
Collector-EmitterCase Temperature, TC [ C] Switching Frequency, f [Hz]
TC = 175 C
Forward Current, IF [A]
100 TC = 125 C
o
o
TC = 125 C
10
o o
10 TC = 75 C TC = 75 C
o
TC = 25 C o
1
TC = 25 C
o
TC = 75 C ----
o
TC = 125 C ---- 0.1 TC = 25 C
o
o
TC = 175 C
1 0.01
0 1 2 3 4 0 100 200 300 400 500 600
Forward Voltage, VF [V]
Reverse Voltage,VR [V]
o 90 o
Reverse Recovery Time, trr [ns]
80
250
70
200
60
150 di/dt = 100A/s
50
di/dt = 200A/s
di/dt = 100A/s
100 di/dt = 200A/s
40
50 30
0 20
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Forwad Current, IF [A] Forward Current, IF [A]
0.5
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.