MTP15N06V

Preferred Device

Power MOSFET
15 Amps, 60 Volts
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
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speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are 15 AMPERES
critical and offer additional safety margin against unexpected voltage 60 VOLTS
transients. RDS(on) = 120 m
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature NChannel
D
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol Value Unit
DrainSource Voltage VDSS 60 Vdc
G
DrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc
GateSource Voltage
Continuous VGS 20 Vdc S
Single Pulse (tp 50 s) VGSM 25 Vpk
Drain Current Continuous @ 25C ID 15 Adc MARKING DIAGRAM
Drain Current Continuous @ 100C ID 8.7 & PIN ASSIGNMENT
Drain Current Single Pulse (tp 10 s) IDM 45 Apk 4
Total Power Dissipation @ 25C PD 55 Watts 4 Drain
Derate above 25C 0.5 W/C
Operating and Storage Temperature TJ, Tstg 55 to C
Range 175 TO220AB
Single Pulse DraintoSource Avalanche EAS 113 mJ CASE 221A
Energy Starting TJ = 25C STYLE 5
MTP15N06V
(VDD = 25 Vdc, VGS = 10 Vdc,
LLYWW
IL = 15 Apk, L = 1.0 mH, RG = 25 )
1
Thermal Resistance Junction to Case RJC 2.73 C/W 2
3 1 3
Thermal Resistance Junction to Ambient RJA 62.5
Gate Source
Maximum Lead Temperature for Soldering TL 260 C
Purposes, 1/8 from case for 10 2
seconds Drain
MTP15N06V = Device Code
LL = Location Code
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

MTP15N06V TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

August, 2006 Rev. 4 MTP15N06V/D
 MTP15N06V

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage V(BR)DSS
(VGS = 0 Vdc, ID = 250 Adc) 60 Vdc
Temperature Coefficient (Positive) 67 mV/C
Zero Gate Voltage Drain Current IDSS Adc
(VDS = 60 Vdc, VGS = 0 Vdc) 10
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) 100
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS 100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage VGS(th)
(VDS = VGS, ID = 250 Adc) 2.0 2.7 4.0 Vdc
Threshold Temperature Coefficient (Negative) 5.0 mV/C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 7.5 Adc) RDS(on) 0.08 0.12 Ohm
DrainSource OnVoltage (VGS = 10 Vdc) VDS(on) Vdc
(ID = 15 Adc) 2.0 2.2
(ID = 7.5 Adc, TJ = 150C) 1.9
Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc) gFS 4.0 6.2 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 469 660 pF
(VDS = 25 Vdc, VGS = 0 Vdc,
Output Capacitance Coss 148 200
f = 1.0 MHz)
Reverse Transfer Capacitance Crss 35 60

SWITCHING CHARACTERISTICS (Note 2)

TurnOn Delay Time td(on) 7.6 20 ns
Rise Time (VDD = 30 Vdc, ID = 15 Adc, tr 51 100
VGS = 10 Vdc,
TurnOff Delay Time RG = 9.1 ) td(off) 18 40
Fall Time tf 33 70
Gate Charge QT 14.4 20 nC
(See Figure 8)
(VDS = 48 Vdc, ID = 15 Adc, Q1 2.8
VGS = 10 Vdc) Q2 6.4
Q3 6.1
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1) VSD Vdc
(IS = 15 Adc, VGS = 0 Vdc)
1.05 1.6
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150C)
1.5
Reverse Recovery Time trr 59.3 ns
(See Figure 14)
ta 46
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) tb 13.3
Reverse Recovery Stored QRR 0.165 C
Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance LD 4.5 nH
(Measured from the drain lead 0.25 from package to center of die)

Internal Source Inductance LS 7.5 nH

(Measured from the source lead 0.25 from package to source bond pad)
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.

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 MTP15N06V

TYPICAL ELECTRICAL CHARACTERISTICS

30 30
VGS = 10 V 8V TJ = 100C
TJ = 25C VDS 10 V
9V
25 25
I D , DRAIN CURRENT (AMPS)

I D , DRAIN CURRENT (AMPS)

7V 25C
55C
20 20

15 6V 15

10 10
5V
5 5

0 0
0 1 2 3 4 5 6 7 2 4 6 8 10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS, GATETOSOURCE VOLTAGE (VOLTS)

Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics

R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS)

R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS)

0.20 0.13
VGS = 10 V TJ = 25C

0.11
0.14 TJ = 100C

VGS = 10 V
0.09
25C
0.08
0.07 15 V
55C

0.02 0.05
0 5 10 15 20 25 30 0 5 10 15 20 25 30
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 3. OnResistance versus Drain Current Figure 4. OnResistance versus Drain Current
and Temperature and Gate Voltage

2 100
RDS(on) , DRAINTOSOURCE RESISTANCE

VGS = 0 V
VGS = 10 V
ID = 7.5 A
1.6
I DSS , LEAKAGE (nA)
(NORMALIZED)

TJ = 125C
1.2

0.8

0.4 10
50 25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE (C) VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 5. OnResistance Variation with Figure 6. DrainToSource Leakage

Temperature Current versus Voltage

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3

Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because draingate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
1500
1200
C, CAPACITANCE (pF)
900
600
300
0
10
MTP15N06V
POWER MOSFET SWITCHING
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the offstate condition when
calculating td(on) and is read at a voltage corresponding to the
onstate when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
VDS = 0 V VGS = 0 V TJ = 25C
Ciss
Crss Ciss
Coss
Crss
5 0 5 10 15 20 25
VGS VDS
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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 MTP15N06V

12 60 1000
VGS, GATETOSOURCE VOLTAGE (VOLTS)

VDS , DRAINTOSOURCE VOLTAGE (VOLTS)

QT VDD = 30 V
ID = 15 A
10 50 VGS = 10 V
VGS TJ = 25C
8 40 100

t, TIME (ns)
Q1 Q2 tr
6 30 tf
td(off)
4 20 10 td(on)
ID = 15 A
TJ = 25C
2 10

Q3 VDS
0 0 1
0 3 6 9 12 15 1 10 100
QT, TOTAL CHARGE (nC) RG, GATE RESISTANCE (OHMS)

Figure 8. GateToSource and DrainToSource Figure 9. Resistive Switching Time

Voltage versus Total Charge Variation versus Gate Resistance

DRAINTOSOURCE DIODE CHARACTERISTICS

15
VGS = 0 V
TJ = 25C
12
I S , SOURCE CURRENT (AMPS)

0
0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCETODRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define reliable operation, the stored energy from circuit inductance
the maximum simultaneous draintosource voltage and dissipated in the transistor while in avalanche must be less
drain current that a transistor can handle safely when it is than the rated limit and adjusted for operating conditions
forward biased. Curves are based upon maximum peak differing from those specified. Although industry practice is
junction temperature and a case temperature (TC) of 25C. to rate in terms of energy, avalanche energy capability is not
Peak repetitive pulsed power limits are determined by using a constant. The energy rating decreases nonlinearly with an
the thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction
discussed in AN569, Transient Thermal temperature.
ResistanceGeneral Data and Its Use. Although many EFETs can withstand the stress of
Switching between the offstate and the onstate may draintosource avalanche at currents up to rated pulsed
traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated
(IDM) nor rated voltage (VDSS) is exceeded and the continuous current (ID), in accordance with industry
transition time (tr,tf) do not exceed 10 s. In addition the total custom. The energy rating must be derated for temperature
power averaged over a complete switching cycle must not as shown in the accompanying graph (Figure 12). Maximum
exceed (TJ(MAX) TC)/(RJC). energy at currents below rated continuous ID can safely be
A Power MOSFET designated EFET can be safely used assumed to equal the values indicated.
in switching circuits with unclamped inductive loads. For

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 MTP15N06V

SAFE OPERATING AREA

100 120
VGS = 10 V

EAS, SINGLE PULSE DRAINTOSOURCE

SINGLE PULSE ID = 15 A
TC = 25C 100
I D , DRAIN CURRENT (AMPS)

10 s

AVALANCHE ENERGY (mJ)

10 80
100 s
60
1 ms
10 ms
1.0 dc 40

RDS(on) LIMIT
THERMAL LIMIT 20
PACKAGE LIMIT
0.1 0
0.1 1.0 10 100 25 50 75 100 125 150 175
VDS, DRAINTOSOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature

1.0
D = 0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.2
0.1
0.05 P(pk)
0.1
RJC(t) = r(t) RJC
0.02
D CURVES APPLY FOR POWER
0.01 PULSE TRAIN SHOWN
SINGLE PULSE t1 READ TIME AT t1
t2 TJ(pk) TC = P(pk) RJC(t)
DUTY CYCLE, D = t1/t2
0.01
1.0E05 1.0E04 1.0E03 1.0E02 1.0E01 1.0E+00 1.0E+01
t, TIME (s)

Figure 13. Thermal Response

di/dt
IS
trr
ta tb
TIME

tp 0.25 IS

IS

Figure 14. Diode Reverse Recovery Waveform

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 MTP15N06V

PACKAGE DIMENSIONS

TO220 THREELEAD
TO220AB
CASE 221A09
ISSUE AA

NOTES:
SEATING
T PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q
J R
0.100
0.080
0.120
0.110
2.54
2.04
3.04
2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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