PD - 91483D

IRF9540NS/L
HEXFET Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF9540S) D
VDSS = -100V
l Low-profile through-hole (IRF9540L)
l 175C Operating Temperature
RDS(on) = 0.117
l Fast Switching
G
l P-Channel
l Fully Avalanche Rated
ID = -23A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9540L) is available for low-
profile applications.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ -10V -23
ID @ TC = 100C Continuous Drain Current, VGS @ -10V -16 A
IDM Pulsed Drain Current -76
PD @TA = 25C Power Dissipation 3.8 W
PD @TC = 25C Power Dissipation 140 W
Linear Derating Factor 0.91 W/C
V GS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 430 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 1.1
C/W
RJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40

4/3/02
IRF9540NS/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.11 V/C Reference to 25C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance 0.117 VGS = -10V, I D = -11A
VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, I D = -250A
gfs Forward Transconductance 5.3 S VDS = -50V, ID = -11A
-25 VDS = -100V, V GS = 0V
IDSS Drain-to-Source Leakage Current A
-250 VDS = -80V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 97 ID = -11A
Qgs Gate-to-Source Charge 15 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge 51 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 15 VDD = -50V
tr Rise Time 67 ID = -11A
ns
td(off) Turn-Off Delay Time 51 RG = 5.1
tf Fall Time 51 RD = 4.2, See Fig. 10
Between lead,
LS Internal Source Inductance 7.5 nH
and center of die contact
Ciss Input Capacitance 1300 VGS = 0V
Coss Output Capacitance 400 pF VDS = -25V
Crss Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

-23
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G
-76
(Body Diode) p-n junction diode. S

V SD Diode Forward Voltage -1.6 V TJ = 25C, IS = -11A, VGS = 0V

t rr Reverse Recovery Time 150 220 ns TJ = 25C, IF = -11A
Q rr Reverse Recovery Charge 830 1200 nC di/dt = -100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 7.1mH Uses IRF9540N data and test conditions
RG = 25, I AS = -11A. (See Figure 12)
ISD -11A, di/dt -470A/s, VDD V(BR)DSS,
TJ 175C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
 IRF9540NS/L

100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V
-ID , Drain-to-Source Current (A)

- 7.0V

-ID , Drain-to-Source Current (A)

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V

10 10

-4.5V

-4.5V 20s PULSE WIDTH 20s PULSE WIDTH

Tc = 25C A TC = 175C
1 1 A
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
I D = -19A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)

TJ = 25C
2.0

TJ = 175C
10
(Normalized)

1.5

1.0
1

0.5

VDS = -25V
20s PULSE WIDTH VGS = -10V
0.1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF9540NS/L

20
3000 I D = -11A
V GS = 0V, f = 1MHz
C iss = Cgs + C gd , Cds SHORTED VDS = -80V

-VGS , Gate-to-Source Voltage (V)

C rss = C gd VDS = -50V
2500 C oss = C ds + C gd 16
VDS = -20V
C, Capacitance (pF)

2000 Ciss
12

1500

8
Coss
1000
Crss
4
500
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 A
A 0 20 40 60 80 100
1 10 100
-VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
-ISD , Reverse Drain Current (A)

BY R DS(on)
-I D , Drain Current (A)

10 100
TJ = 175C

TJ = 25C
100s

1 10

1ms

TC = 25C
TJ = 175C 10ms
VGS = 0V Single Pulse
0.1 A 1 A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF9540NS/L

25
RD
V DS

20 V GS
D.U.T.
ID , Drain Current (A)

RG -
+ V DD
15

-10V
Pulse Width 1 s
10 Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

5

td(on) tr t d(off) tf
VGS
0
25 50 75 100 125 150 175 10%
TC , Case Temperature ( C)

Fig 9. Maximum Drain Current Vs. 90%

Case Temperature VDS

Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10 PDM
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9540NS/L

1200
ID

EAS , Single Pulse Avalanche Energy (mJ)

VDS L
TOP -4.7A
-8.1A
1000
BOTTOM -11A
RG D.U.T
VDD
IAS A
800
-20V DRIVER
tp 0.01

600

400
15V

Fig 12a. Unclamped Inductive Test Circuit 200

0 A
25 50 75 100 125 150 175
I AS Starting TJ , Junction Temperature (C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K
QG 12V .2F
.3F
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF9540NS/L
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" V DD
-
D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% [ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF9540NS/L
D2Pak Package Outline

D2Pak Part Marking Information

THIS IS AN IRF530S WITH PART NUMBER
LOT CODE 8024 INTERNATIONAL
AS S EMBLED ON WW 02, 2000 RECTIFIER F530S
IN T HE AS SEMBLY LINE "L" LOGO
DAT E CODE
YEAR 0 = 2000
AS S EMBLY
LOT CODE WEEK 02
LINE L
 IRF9540NS/L
TO-262 Package Outline

TO-262 Part Marking Information

EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNATIONAL
ASS EMBLED ON WW 19, 1997
RECTIFIER
IN THE ASS EMBLY LINE "C" LOGO
DATE CODE
YEAR 7 = 1997
AS SEMBLY
LOT CODE WEEK 19
LINE C
IRF9540NS/L
D2Pak Tape & Reel Information

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/02