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Quantum dot-sensitized solar cells (QDSCs) present promising cost-eective alternatives to conventional
silicon solar cells due to their distinctive properties such as simplicity in fabrication, possibility to realize light
absorption in wide solar spectrum regions, and theoretical conversion eciency up to 44%. This review
highlights recent developments in critical materials including quantum dots, photoanodes, counter
electrodes (CEs), and electrolytes for QDSC applications. Among them, electron recombination at the
photoanode/electrolyte interface limits the evolution of high-eciency QDSCs, therefore the optimized
construction of quantum dots, the various microtopographies of wide bandgap semiconductors (TiO2,
ZnO) as well as emerging CEs having good electrocatalytic activity are elaborated in this paper. We argue
that these key factors can provide design guidelines for future successful applications and signicantly
Received 5th May 2015
Accepted 29th June 2015
promote the development of QDSCs. Liquid, quasi-solid-state, and solid-state electrolytes for QDSCs
are summarized, aiming at enhancing the long-term stability of QDSCs. This review presented below
DOI: 10.1039/c5ta03280f
gives a succinct summary of materials for QDSC applications, with a conclusion and future prospects
www.rsc.org/MaterialsA section.
a
Key Laboratory of Marine Chemistry Theory and Technology, Ministry of Education,
Ocean University of China, Qingdao 266100, P. R. China. E-mail: tangqunwei@ouc.
edu.cn; yuyan@ouc.edu.cn; Fax: +86 532 66782533; Tel: +86 532 66782533
b
Institute of Materials Science and Engineering, Ocean University of China, Qingdao
266100, P. R. China
c
Qingdao Collaborative Innovation Center of Marine Science and Technology, Ocean Fig. 1 Number of research articles published per year obtained from a
University of China, Qingdao 266100, P. R. China simple and limited literature search using the keywords quantum dot-
The authors have equal contributions. sensitized solar cell (data source: ISI Web of Knowledge).
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than most organic dyes,6 and multiple exciton generation and can be used in large scale production. This signicantly
(MEG).7 The scheme of MEG and the relationship between the reduces the consumption of energy to manufacture solar cells
bandgap and size are shown in Fig. 2. Using PbSe QDs to and gives the opportunity to realize industrialization. In this
expound, herein, when irradiating PbSe QDs with photon
energies greater than 2 times the QD bandgap, a multiplication
of carrier extraction is rather obvious. Meanwhile, the absorp-
tion of PbS QDs can be changed from 680 to 1750 nm with the
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size increasing from 2.6 to 7.2 nm.8 Based on the above merits,
it is possible to realize the light absorption in the whole solar
spectrum region via harvesting underutilized ultraviolet and
currently unutilized infrared by means of combining several
types of QDs.9 Moreover, a direct bandgap semiconductor oers
a stronger absorption coecient of 104 cm1 and QDs can
generate multiple electronhole pairs from a single incident
photon absorption in QDs, which lead to the maximum theo-
retical conversion eciency up to 44%.10
On the other hand, QDs can be easily deposited on the
surface of TiO2 at room temperature by solution processed
techniques such as successive ionic layer-by-layer adsorption
and reaction (SILAR),13 chemical bath deposition (CBD),14
surface attachment through molecular linkers between opti- Fig. 3 Various approaches of depositing a QD suspension on elec-
mized QDs and TiO2,15 spin coating,16 electrodeposition and trode surfaces: (a) drop-casting or spin coating, (b) CBD, (c) SILAR, (d)
electrophoretic deposition (Fig. 3).17,18 The techniques are facile electrophoretic deposition, and (e) a bifunctional linker approach.19
Fig. 2 (a) Schematic of multiple exciton generation.11 (b) Extraction of excitons generated by MEG in a PbSe nanocrystal device.12 (c) The concept
of using IVVI semiconductor PbS QDs with dierent sizes to build a triple-junction tandem solar cell, each absorbing in a dierent spectral
range.8
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review, we will primarily summarize the development of QDSCs Several parameters have been employed to estimate the
over the recent ve years. photovoltaic performances of QDSCs. According to photocur-
rent densityvoltage (JV) characteristics of the solar cell, the
1.2 The operational principle of QDSCs conversion eciency (h) of the cells is obtained as follows:8
The classical architecture of a QDSC consists of three compo- Jm Vm Jsc Voc FF
h% 100%
nents: a QD sensitized photoanode, a CE and, a redox electrolyte P P
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having S2/Sn2couples, as shown in Fig. 4a.20 The photoanode where Voc is the open-circuit voltage, Jsc is the short-circuit
is fabricated by coating a mesoporous wide bandgap semi- current density, P is the incident solar power on the device, and
conductor layer (TiO2, ZnO) with an optimal thickness of ca. 10 FF is the ll factor. Jsc is the photocurrent density derived at zero
mm and a porosity of 5060% on the conducting glass. Then, the bias voltage which is dependent on light intensity, light
QD photosensitizers are adsorbed onto the surface of meso- absorption, injection eciency, and regeneration of QDs, while
porous semiconductor nanostructures, leading to photon Voc is the maximum voltage that a solar cell can generate which
absorption and electron injection. As shown in Fig. 4b, when is determined by the dierence between the Fermi level of the
persistently irradiated by incident light, QDs can absorb wide bandgap semiconductor and the redox potential of the
photons and excite electrons from the valence band (VB) of QDs redox system.22,23
to their conduction band (CB). Due to the good match of energy
levels, electrons are injected into the CB of TiO2 (see reaction
(1)), and then transferred along the percolating network of TiO2 2. Photoanodes in QDSCs
nanocrystallites to transparent conductive oxide (TCO) (see 2.1 QD materials
reaction (2)). QDs are subsequently regenerated by reducing
With an aim to improve the photovoltaic performances of
species (see reaction (3)) in the electrolyte that acts as a hole-
QDSCs, many researchers have focused their attention on
transport medium. Finally, holes are transported to the CE,
materials selection and materials engineering. According to the
where the oxidized counterpart of the redox system is reduced
above discussion, the energy level of QDs employed in QDSCs
(see reaction (4)). A major force that counteracts these favorable
must match that of wide bandgap semiconductors. To the best
processes (see reaction (1)(4)) is the charge recombination of
of our knowledge, enormous literature studies have reported
electrons in the conduction band of QDs and TiO2 at the elec-
the availability of dierent QDs with an appropriate bandgap
trolyte interface (see reaction (5) and (6)).21
(as listed in Table 1) as photosensitizers in QDSCs including
CuInS2,24 PbS,25,26 InP,27 InAs,28 Bi2S3,29 Ag2S,30,31 Ag2Se,32
TiO2/QD + hn / TiO2/QD (electron + hole) /
CdS,3335 CdSe,36,37 CdTe,34,38,39 ZnSe,40 graphene,41 and Si.42
TiO2 (electron) + QD (hole) (1)
Among them, Cd chalcogenide QDs are preferred as they are
TiO2 (electron) + TCO / TiO2 + TCO (electron) (2) more stable in QDSCs although they may degrade upon visible
illumination.43
S2 + 2QD (hole) + S(n1)2 / Sn2 + QD (3)
2.2 Semiconductor lms
Sn2 + 2TCO (electron) / S2 + S(n1)2 (4)
Semiconductor lms coated on the surface of wide bandgap
2QD (electron) + Sn2 /S 2
+ S(n1) 2
+ QD (5) semiconductors are key components within QDSC devices. In
recent years, several approaches have been explored to improve
2TiO2 (electron) + Sn2 / S2 + S(n1)2 + TiO2 (6) the performance of QDSCs and some of the signicant results
Fig. 4 (a) The general scheme of a typical QDSC device.20 (b) Interfacial charge transfer processes that follow excitation of semiconductor
nanocrystals in QDSCs.21
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Table 1 Representative VB level (EVB), CB level (ECB) and bandgap resulting in the enhancement of the resultant cell devices. From
energies (Eg) for narrow bandgap semiconductors Fig. 6, it can be seen that the PID eect can signicantly
increase the Voc because photogenerated holes in type-II QDs
Materials EVB (eV) ECB (eV) Eg (eV)
are retained in the core for a relatively long time, allowing for
TiO2 7.3 4.1 3.2 the accumulation of a positively charged layer. Meanwhile, the
ZnO 7.6 4.2 3.4 electron injection to the CB of TiO2 is favorable for the forma-
CdS 6.1 3.7 2.4 tion of a dipole moment.8688 This novel design strategy has the
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are summarized in Table 2 for quick and easy comparison Wide bandgap
QD photosensitizers semiconductors CEs h (%) Ref.
among the QDSCs that have been reported. However, the
conversion eciencies are still lower than those of DSSCs. The CdS TiO2 microspheres Pt 2.63 44
major problems limiting the eciency enhancement are CdS ZnO/TiO2 nanosheets CuS 1.95 45
attributed to insucient light absorption, recombination of CdS ZnO pyramid arrays Pt 1.60 46
photoelectrons with holes in the electrolyte, and the slow charge CdSe Porous TiO2 Pt 2.23 47
CdSe TiO2 Cu2S 3.70 48
transfer process between the CE and electrolyte. CdTe TiO2 Pt 0.19 49
A challenging topic for improving the conversion eciency is Cu1.7S TiO2 Au 0.90 50
to advance Jsc and Voc. In order to increase the light absorption, In2S3 TiO2 Pt 1.30 51
the combination of dierent kinds of QDs with dierent InAs TiO2 Pt 0.30 28
bandgaps, expanding the absorption range within the solar Ag2Se TiO2 Pt 1.76 32
PbS TiO2 nanotube Pt 3.41 52
spectrum, has been widely studied, and these integrated QD arrays
systems include CdS/CdSe,59,78,79 CdS/PbS,80 CuInS2/CdS,81 CuInS2 TiO2 Cu2S/RGO 2.51 53
CuInS2/In2S3,55 CdSe/CdTe,69 CdSe/GO,82 etc. By appropriately CuInSe2 TiO2 Cu2S 4.30 54
matching the energy level of QDs, facile electron transfer is CuInS2/In2S3 Mesoporous TiO2 Cu2S 1.62 55
benecial to the elevation of electron density on the photo- CuInS2/CdS TiO2 nanotubes Pt 7.30 56
CdS/CdSe Graphene/TiO2 PbS 2.80 57
anode and therefore Jsc. Among them, core/shell QD sensitizers CdS/CdSe ZnO nanorods Cu2S 3.28 58
with advanced structure and superior photoelectric properties nanosheets
are regarded as outstanding building blocks of QDSCs due to CdS/CdSe TiO2 Cu2S 4.05 59
the enhanced charge injection eciency and inhibited charge CdS/CdSe ZnO Cu2S 4.46 60
recombination process.65,83,84 A highly ecient inverted type-I CdS/CdSe ZnO nanoowers CuS 1.30 61
CdS/CdSe TiO2 spheres Pt 4.81 18
CdS/CdSe core/shell structure (see Fig. 5a) has been explored by CdTe/CdS TiO2 Cu2S 2.44 39
Zhong et al.67 With the narrower bandgap material grown CdSe/ZnSe/ZnS TiO2 Pt 3.46 62
epitaxially around the core of the wider bandgap material, the CdS/CdSe/CdS/ZnS TiO2 Cu2S 5.47 63
charge carriers (electrons and holes) are distributed largely in Cu2S/CuInS2/ZnSe TiO2 Pt 2.52 64
the shell region. Meanwhile, this favors the extraction of pho- PbS/CdS core/shell Mesoporous TiO2 CuxS 1.28 65
CdSexTe1x/CdS core/shell Mesoporous TiO2 Cu2S 5.04 66
togenerated electrons as well as holes and enhances the elec- CdS/CdSe core/shell TiO2 Cu2S 5.32 67
tron injection rate.85 Ideal QD sensitizers should bear the CuInS2/ZnS core/shell Mesoporous TiO2 Cu2S 7.04 68
characteristic of a wide absorption range, high CB edge, and CdTe/CdSe core/shell Mesoporous TiO2 Cu2S 6.76 69
free of trap-state defects. To further enhance Voc and cell e- ZnTe/CdSe core/shell TiO2 Cu2S 7.17 70
ciency, type-II ZnTe/CdSe and CdTe/CdSe core/shell QDs have CdSexTe1x TiO2 Cu2S 6.36 71
CdSxSe1x/MnCdS TiO2 nanotube CuS 3.26 72
also been explored, as illustrated in Fig. 5b, yielding conversion arrays
eciencies of 7.17% and 6.67%, respectively.70 The prominent CoCdS/CdSe/ZnS TiO2 Cu2S 3.16 73
eciency is attributed to the enhanced electron injection rate MnCdS/CdSe TiO2 Cu2S/GO 5.40 74
and the retarded charge recombination process because the CdSe rods TiO2 PbS 2.70 75
shell can act as a tunneling barrier for the hole localized in the ZnSe/CdSe/ZnSe ZnO Pt 6.20 76b
Perovskite QDs TiO2 Pt 6.50 77
core. Furthermore, the augmentation of band oset and the
a
stronger photo-induced dipole (PID) eect which brings Electrolytes are aqueous solutions unless otherwise stated.
b
Polysulde gel electrolyte.
forward an upward shi of the TiO2 CB edge are other reasons
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Fig. 5 Schematic diagram of the bandgap edge alignment of (a) the inverted type-I CdS/CdSe core/shell structure,67 (b) the type-II ZnTe/CdSe
and CdTe/CdSe core/shell structure and the JV curves of the QDSCs.70
Fig. 7 JV curves of the (a) CdS and (b) CdS/ZnS QDSCs treated with dierent organic and inorganic surface passivation agents.91
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optimize the surface of QDs and bring QDSCs into the next big
breakthrough in photovoltaics.
Additionally, the rapid electron transport along the perco-
lating network from wide bandgap inorganic semiconductors
(TiO2, ZnO) has an accelerated eect on high cell performances
by construction engineering. It is well understood that the wide
bandgap semiconductor acts like a bridge to acquire the photo-
inject electron from the sensitizer and transfer the electron to
uorine-doped tin oxide (FTO).62 Thus, expediting the electron
ow rate from sensitizers to the substrate can eciently reduce Fig. 8 The polymorphic TiO2: (a) nanotube array,72 (b) nanorod array,97
the backward reaction of electrons with the electrolyte. Based (c) nanodendrite array,99 and (d) nanowire/nanotube composite.100
on this theory, great eort has been made on structuring
fascinating geometry of wide bandgap semiconductors in recent
years. From Fig. 8 and 9, polymorphic semiconductors, such as
TiO2 nanotube arrays,72 nanorod arrays,97,98 nanodendrite
arrays,99 nanowire/nanotube composites,100 ZnO nanorod
arrays,101 nanosheets,102 nanoowers,61 nanotube arrays, forests,
and pyramid arrays,46 have been sensitized with QDs and
employed as photoanodes for QDSC devices. In 2007, Sun et al.
reported photoanodes from CdS QD sensitized TiO2 nanotube
arrays, yielding a signicant cell eciency of 4.15% under AM
1.5 G illumination. This enhanced performance is attributed to
the crystalline nature of the semiconductors and the lm
geometry allowing a fast and ecient transfer of the photo-
generated electrons from QDs to the substrate, which compares
favorably with the traditional mesoporous lm electrodes
leading to a much reduced electronhole recombination and
much improved photocurrent and eciency.35 Furthermore,
single wall carbon nanotube/TiO2 nanocomposites,103 vertical
nanosheet-structured ZnO/TiO2,45 and the vertically aligned
hierarchical TiO2 nanowire/ZnO nanorod or TiO2 nanowire/ZnO
nanosheet hybrid arrays104 are also successfully synthesized and
employed as photoanodes, yielding a conversion eciency as
high as 4.57% for CdS/CdSe based QDSCs. Besides, the
improvement of electron transfer and separation rates along
QDs should be also taken into consideration. In this fashion,
engineering QD construction is essential to modify the prop-
erties of QDs. Considering the purpose to optimize the perfor- Fig. 9 The polymorphic ZnO: (a) nanorod array, (b) nanotube array, (c)
forest, (d) pyramid array,46 (e) nanosheets,102 and (f) nanoowers.61
mance of QDSC devices, quantum rods were also deposited
rapidly by electrophoresis onto mesoporous TiO2 electrodes and
photovoltaic eciency values of up to 2.7% were measured for
QRSCs.75 improving the performance of QDSCs by employing the Mn2+
Apart from the strategies of employing polymorphic TiO2 doping of CdS/CdSe.74 The high conversion eciency is mainly
and ZnO, other approaches have been employed to improve the attributed to long-lived charge carriers in QD sensitizers intro-
performance of QDSC devices. Doping optically active transition duced by the Mn2+ dd transition as well as the enhanced ability
metal ions is an eective way to modify the electronic and to capture all incident photons. According to the discussion
photophysical properties of QDs because of the created elec- above, passivation of QDs can signicantly advance the
tronic states in the midgap region of the QDs, thus altering the performance of QDSC devices. Likely, pre-treating the wide
photogenerated electron separation and recombination bandgap semiconductor is another approach to reduce electron
dynamics. For example, Santra et al. succeeded in signicantly recombination. A thin TiO2-coating layer deposited onto a
17502 | J. Mater. Chem. A, 2015, 3, 1749717510 This journal is The Royal Society of Chemistry 2015
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nanocrystalline TiO2 electrode by TiCl4 gains an enhanced not signicant in these CEs. Therefore, a challenge of opti-
eciency by 40% compared with a bare QDSC.105 Consequently, mizing the CE materials is to improve the conducting ability.
the main contribution of all the approaches lies in the reduced Apart from transition metal suldes, carbonaceous materials
recombination rate at the interface and the signicantly sup- have also received growing attention as CEs for QDSCs.131
pressed charge recombination. However, the relatively slow intrinsic reaction kinetics of carbon
with the polysulde electrolyte leads to the poor performance of
QDSCs. By overcoming this problem of carbonaceous materials,
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resistance can be regarded as a conductive support and catalyst Although the reported eciencies of QDSCs are still lower
to load CE materials, such as graphene/PbS,137 graphene/CoS,138 than those of other solar cells, breakthroughs in QDSCs will be
carbon nanober/CuS,139 multiwall carbon nanotube/ realized with further studies to improve the electrocatalytic
Cu2ZnSnSe4,140 carbon black/PbS,141 and reduced graphene ability of CEs.
oxide/Cu2S.107 Water-soluble multiwall carbon nanotubes
(MWCNTs) and Cu2ZnSnSe4 (CZTSe) nanoparticle composites
were successfully synthesized by Zeng et al. and were employed 4. Electrolytes
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Fig. 12 (a) Schematic of the suggested composite charge transmission model for the MWCNTCZTSe composite CEs in a QDSC system. (b)
Characteristic JV curves for the QDSCs with Pt, MWCNT, CZTSe, and MWCNTCZTSe composite CEs.140
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The quasi-solid-state polymer gel electrolyte shows high performance. Furthermore, in order to increase the amount of
ionic conductivity, good thermal stability and favorable pene- liquid electrolyte loading, the synergistic eect of both osmotic
tration ability into nanocrystalline porous TiO2 lms, thus it has pressure and capillary force is believed to be an eective
been widely used in DSSCs.157,158 In general, the liquid electro- strategy to further elevate the dosage of the liquid electrolyte in
lyte is trapped in the network to form a homogeneous quasi- per unit volume of the gel electrolyte. Thus, the dense matrices
solid-state electrolyte. Yu et al. rst used the chemically cross- were freeze-dried aer swollen in deionized water. The conver-
linked polyacrylamide-based hydrogel as the polymer matrix to sion eciency of the device was enhanced to 2.34% in
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prepare the quasi-solid-state polysulde electrolyte for CdS/ comparison to 1.36% for pure polymer gel electrolyte based
CdSe co-sensitized solar cells and 4.0% of the eciency was solar cells. Meanwhile, a low molecular mass gelator, such as
achieved.159 As we all know, the liquid electrolyte can be easily dextran, 12-hydroxystearic acid and a natural polysaccharide
trapped into a three-dimensional (3D) gel matrix by the osmotic Konjac glucomannan based highly conductive hydrogel poly-
pressure. In our previous work, aiming at accelerating the sulde electrolyte have been developed,163165 and the enhanced
reduction reaction of redox species, conducting polymers (PANI stability was shown in Fig. 13. The good permeation and high
and PPy)160 and carbonaceous materials (graphene, graphene conductivity of the gel electrolyte, in which the electron trans-
oxide)161 have been incorporated into the gel systems to fabri- port is even much faster than the liquid electrolyte, may be the
cate conducting gel electrolytes. Conducting polymer gel elec- main reason for its excellent photovoltaic performance. At the
trolytes by incorporating graphene into the 3D polyacrylamide same time, the good intrinsic stability of the hydrogel electro-
matrix was also successfully prepared and employed to lyte contributes to the long-term stability.
assemble CdS sensitized solar cells.162 The electrocatalytic For further increasing the stability of QDSCs, solid-state
reaction was expanded from the CE/electrolyte interface to both electrolytes and hole conductors have been used to replace
the interface and the gel electrolyte, resulting in the increased liquid electrolytes and quasi-solid-state electrolytes in QDSCs.
Fig. 13 (a) SEM image of the microporous crosslinked polyacrylamide matrix. (b) JV characteristics of quasi-solid-state QDSCs with conducting
gel electrolytes.162 (c) Normalized device performance variation with the QDSCs based on the liquid electrolyte and hydrogel electrolyte at
60 C.164 (d) Time-course change of the normalized eciencies for the QDSCs with the gel electrolyte and liquid electrolyte.165
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However, the conversion eciency of QDSCs based on solid- The factors that limit the eciency of QDSCs include limited
state electrolytes is lower than the solar cell devices with liquid absorption of incident light, recombination at the anode/elec-
electrolytes. The main reasons for unsatisfactory photovoltaic trolyte and the low FF arising from unsatisfactory CE
behavior can be attributed to the weak penetration ability of performances. By addressing these issues, optimizing the
polymer solid-state electrolytes into mesoporous TiO2 lms as construction of QD sensitizers, CEs with superior catalytic
well as the relatively inferior electron conductivity, which limits activity and redox couple electrolyte can improve the perfor-
the lm thickness of the solid electrolyte and lowers the light mance of QDSCs. Combination of diversied inorganic semi-
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harvesting eciency. Thus, a crucial factor to advance the e- conductor QDs and passivation of QDs by organic and inorganic
ciency is to improve the conductivity and penetration ability of passivating agents can enhance the light absorption and elec-
the electrolyte. Recently, solid-state electrolytes based on tron excitation and reduce the recombination at the interface.
poly(ethylene oxide)poly(vinylidene uoride) polymer blends Among them, the type-II core/shell structure can signicantly
with a S/tetramethylammonium sulfate (S/TMAS) redox additive increase the Voc arising from PID eects. On the other hand,
were investigated.166 The study showed that the PEOPVDF highly ordered architectures of wide bandgap semiconductors
polymer electrolyte with the S/TMAS redox additive could provide fast and ecient transfer of photogenerated electrons
improve the solar cell incident photon-to-current conversion from QDs to the substrate.
eciency and stability. A similar discovery was reported by Owing to the distinction between QDSCs and DSSCs in redox
adding sodium sulde (Na2S) to the solid-state electrolyte.167 couples, the electrocatalytic ability of Pt is not satisfactory,
The created polysulde ions, Sn2, serving as the electron leading to a low FF. Metal chalcogenides, carbon materials,
scavenger at the electrolyte/counter electrode interface and S2 conducting polymers, and carbon material/metal chalcogenide
consuming holes at the photoanode/electrolyte interface within composites are explored and employed in QDSCs. Although
the solid electrolyte are the crucial compounds to enhance the there have been some eorts to utilize conducting polymers, the
properties of the solid electrolyte. Meanwhile, it is conrmed resultant PCEs of QDSCs employing these CEs are not high. By
that the ionic conductivity of the electrolyte with additives such combining the advantages of carbon materials (high conduc-
as Na2S is signicantly modied. In our previous study, we have tivity) and metal chalcogenides (high catalytic ability), the
synthesized a class of solid polymer electrolytes based on pol- advanced performance of CEs has been achieved. Apart from
yvinylpyrrolidone (PVP).168 An optimized conversion eciency improving the conversion eciency, long-term stability is
of 0.55% is measured for the QDSCs employing the PVP/ necessary to be taken into account. Generally, polymer gel
10Na2SS solid electrolyte. Although the conversion eciency is electrolytes and solid-state hole conductors as quasi-state and
still lower than that of liquid electrolyte based QDSCs, the work solid-state electrolytes are utilized in QDSCs. However, the
demonstrated the feasibility of designing cost-eective solid- properties of these QDSCs employing quasi-state electrolytes
state electrolytes with polymers and redox species as additives. and solid-state electrolytes are still poorer than that of those
However, the exploration of solid electrolytes based on poly- based on liquid electrolytes.
mers for solid-state QDSCs is still limited because of low In conclusion, for further development, future studies
penetration ability and unsatisfactory conductivity. By should focus on improving the QDSC performance. For
addressing this issue, a plastic crystal based solid-state elec- example, the design of new semiconductor QDs to broaden the
trolyte composed of plastic crystal succinonitrile and Na2S was absorption spectral region oers a range of new opportunities
creatively synthesized by a simple blending approach.169 Owing and challenges to improve the eciency. Moreover, deeper
to the signicantly enhanced conductivity, an optimal power research on surface treatment provides a new strategy to reduce
conversion eciency of 1.29% is measured. The results the recombination. Also, further studies of CEs with high elec-
demonstrate that exploring a new medium to substitute the trocatalytic ability are expected to be the breakthrough in the
polymer gives the possibility to prepare a superior solid-state currently stagnant research eld of QDSCs. Much attention
electrolyte. Another promising approach of fabricating solid- might be paid on the stability of QDSCs, in which the weak
state electrolytes for QDSCs is to employ p-type semiconductors, penetration ability of polymer electrolytes and inferior electron
such as CuSCN,170 2,20 ,7,70 -tetrakis(N,N-di-p-methoxyphenyl- conductivity limit the development. It is expected that exploring
amine)9,90 -spirobiuorene (spiro-OMeTAD),171 and poly(3-hexyl highly ecient solid-state solar cells will be a persistent objec-
thiophene) (P3HT).172 Although the research on all-solid-state tive in the near future.
electrolytes for QDSC applications is in a primary stage, the
promising peculiarity will trigger researchers to still explore
more ecient and stable QDSC materials and devices. Acknowledgements
5. Summary and perspective The authors would like to acknowledge nancial support from
the Fundamental Research Funds for the Central Universities
QDSCs have become a promising alternative for DSSCs due to (201313001, 201312005), Shandong Province Outstanding
the excellent properties of QD photosensitizers. High power Youth Scientist Foundation Plan (BS2013CL015), Shandong
conversion eciency can be achieved through high-energy Provincial Natural Science Foundation (ZR2011BQ017),
photon excitation. However, the relatively low power conversion Research Project for the Application Foundation in Qingdao
eciency is still not comparable to other photovoltaic devices. (13-4-198-jch), National Natural Science Foundation of China
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