Beruflich Dokumente
Kultur Dokumente
1, 2017
DOI: 10.1007/s11664-016-4930-6
2016 The Minerals, Metals & Materials Society
1.Institut Jean Lamour (UMR7198), Universite de Lorraine, Vandoeuvre les Nancy, France.
2.e-mail: philippe.poure@univ-lorraine.fr
40
Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance 41
Under Different Operating Conditions
Therefore, TEGs are used to recover waste heat in a temperatures at the terminals of the p and n
0
wide range of applications, ranging from low power elements. TH and TC0 in Fig. 1 are the external
(autonomous wireless sensors10 and battery charg- temperatures applied on both hot and cold sides of
ing11) via medium power (automotive,12 stoves,13 the TEG module.
and hybrid photovoltaic-TEG systems14) up to high Depending on the applications, TEGs can be used
power (geothermal power generation15). either under constant temperature gradient or
A TEG module is made of two dissimilar semi- constant heat flow conditions. In the first case, the
conductors: p- and n-type, which are electrically temperature difference DT 0 across a TEG module is
connected in series, to generate a higher voltage and considered constant over time, even though its
a higher electrical power, and thermally in parallel value slowly evolves with variable environmental
to keep each semiconductor element at the same conditions. On the other hand, the constant heat
temperature difference. These semicondutor ele- flow conditions imply that the input heat flow QH is
ments are usually arranged in a planer array and considered constant over time. Moreover, the gen-
fastened between two ceramic hot and cold plates.16 erated electrical power of a TEG depends not only
The basic structure of a TEG formed by the on the working conditions (constant temperature
association of three semiconductor pn junctions gradient or heat flow), but also on the contact
with the electrical load connected to its terminals is thermal resistance. The influence of these contact
presented in Fig. 1. For a given temperature differ- thermal resistances on the TEGs generated electri-
ence between the hot and the cold sides, heat flows cal power and its efficiency in different operating
through the TEG module as presented in Fig. 1.17 conditions have already been discussed in the
The circulation of heat flow through the semicon- literature.2225 Indeed, the thermal contact plates
ductor elements causes a displacement of electrons placed on the both sides of the TEG present an
and holes in opposite directions and, therefore, the interface between the surrounding environment
generation of an electrical current I passing through and its semiconductor elements and have a finite
the connected load RL .18 thermal resistance. If its value is high or not
The physical effects that appear in a TEG module negligible, the semiconductor elements can perceive
when subjected to a temperature difference are the a different temperature gradient or a heat flow than
thermal conduction and the Seebeck, Peltier, and the ones really applied on the both sides of the TEG
Joule effects.16 The Thomson effect is commonly module. However, while designing TEG-powered
neglected when all considered physical properties of systems, the TEG module is mostly modeled with a
a TEG module are temperature independent.1921 simplified Thevenin equivalent circuit whose resis-
The heat flow rates through the hot side QH and the tance is constant and equal to the TEGs electrical
cold side QC of a TEG module, are expressed resistance and voltage is proportional to the tem-
respectively by: perature gradient applied to the TEGs terminals,
where the coefficient of proportionality is the See-
TH T C 1
QH a T H I RE I 2 : 1 beck coefficient. This widely used simplified electri-
hm 2 cal model of TEG provides approximated,
inaccurate, and often unrealistic behaviour because
TH T C 1 the parameters of the thermal environment and
QC a T C I RE I 2 : 2
hm 2 those of TEG are not fully taken into account. On
the other hand, the recent studies on TEG mod-
where RE and hm are the electrical and thermal elling provide accurate and realistic behaviours
resistances of N pairs of pn elements, respectively, through electro-thermal models.22,23 Therefore,
and a is the Seebeck coefficient of the TEG module. from the circuit designers point of view, a faithful
TH and TC denote the internal hot and cold side and fully electrical model under different working
conditions (constant temperature gradient or heat
flow) is needed. In this study, these fully electrical
models of the TEG module with the contact thermal
resistance taken into account are presented and the
analytical expressions of the Thevenin equivalent
circuit parameters are provided. By providing a
realistic fully electrical TEG model reflecting differ-
ent working and environmental conditions, the
benefits are twofold: first, the design of TEG-pow-
ered circuits and systems is simplified and more
realistic (system modeling and simulation), and
V0
second, the harvested thermal energy can be max-
imized by associating to the models the most
adapted maximum power point tracking (MPPT)
techniques, whose efficiency relies on the faithful-
Fig. 1. General structure of a TEG module. ness of the used electrical models.
42 Siouane, Jovanovic, and Poure
The main contributions of the present work can thermal gradient DT at the terminals of its p and n
be summarized as follows: elements (see Fig. 1), consequently:
The unified approach allowing to model a TEG DT 0 TH
0
TC0 DT TH TC : 3
module with or without contact thermal resis- The open circuit voltage of the TEG module is
tance, regardless the working conditions, as a proportional to the temperature gradient across it.
Thevenin equivalent circuit whose parameters The proportionality factor is the Seebeck coefficient
are function of these working conditions and the a of the TEG module:
TEGs module properties;
The fully electrical model of the TEG module
under constant temperature gradient conditions. VOC a DT: 4
0
Although some recent studies22,23 have already DT cnst;hc 0
addressed the electrical behaviour of the TEG
module under constant temperature gradient where a ap an , ap and an are the Seebeck coef-
presenting partially the equivalent electrical ficients of p and n semiconductor elements,
model, the model proposed in this work is fully respectively.
electrical and fits to the unified approach The output voltage of the TEG module is defined
described above; with:
The fully electrical model of the TEG module
under constant heat flow conditions. This is the
VO aDT RE I: 5
major and most original contribution of this 0
DT cnst;hc 0
work. To the best of our knowledge, a Thevenin
fully electrical TEG model under constant heat
flow has never been presented before in the The electrical power supplied to the load RL is the
literature. Montecucco et al.25 discovered exper- difference between the input and output heat flow,
imentally the polynomial relationship between which can be also defined as the product of the
the load voltage and the TEGs terminals tem- output voltage of the TEG module VO and the load
perature gradient without identifying analyti- current I:
cally this relationship in function of the TEGs
parameters and working conditions.
P RL I 2 QH QC aDTI RE I 2 :
0
DT cnst;hc 0
6
This paper is organized as follows. The fully elec- Consequently, under constant temperature gradient
trical TEG models under constant temperature conditions, the TEG module without contact ther-
gradient and constant heat flow conditions, without mal resistance hc can be electrically modeled by an
and with contact thermal resistance taken into equivalent constant voltage source Veq in series with
account, are presented in TEG Electrical Modeling an equivalent internal resistance Req :
Under Constant Temperature Gradient Conditions
and TEG Electrical Modeling Under Constant Heat
Veq 0 aDT aDT 0 : 7
Flow Conditions sections, respectively. In the Re- DT cnst;hc 0
sults and Discussion section, the presented models
are discussed and validated through simulation.
Req RE : 8
Finally, the Conclusion section concludes this DT 0 cnst;hc 0
paper giving some perspectives for future works.
The equivalent Thevenin circuit with the param-
TEG ELECTRICAL MODELING UNDER eters Veq and Req presented with Eqs. 7 and 8,
CONSTANT TEMPERATURE GRADIENT respectively, is the electrical TEG model commonly
CONDITIONS used in the literature in the TEG-powered electron-
In this section, an equivalent fully electrical ics circuit and system designs.1,26 As seen from the
Thevenin model of a TEG module without contact previous demonstration, this electrical TEG model
thermal resistance is first described. Next, consid- is only valid under constant temperature gradient
ering the contact thermal resistance, the modified conditions and does not consider contact thermal
fully electrical TEG model is presented. resistance, thus greatly approximating the realistic
behaviour of the TEG module.
TEG Electrical Modeling Without Contact TEG Electrical Modeling with Contact
Thermal Resistance Thermal Resistance
As the contact thermal resistance is not consid- In prior research works on thermoelectric power
ered, the thermal gradient DT 0 applied on both hot generation systems, the temperature gradient
and cold sides of a TEG module is the same as the across the thermoelectric module is considered
Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance 43
Under Different Operating Conditions
QH QC I VO : 11
hc 60
where VO hc 60 is the output voltage at the terminals
of the load RL .
Fig. 2. Thermal modeling of the TEG module with contact thermal
resistance.
When considering the contact thermal resistance,
and following the same analysis to determine the
expression of the heat flow through the metal
constant independently of electrical current levels contacts on the cold side of the TEG module, it can
drawn by the connected load RL . In fact, the waste be deduced from Fig. 2:
heat is transferred from the environment to the 0
TH TH TC TC0
semiconductor elements of the TEG module though VO I: 12
hc hc hc 60
the contact plates, since it is at the origin of the
thermal contact resistance hc . Because of this Knowing that TH DT TC , the temperature
contact thermal resistance hc , the thermal gradient applied at the cold side of the p and n semiconductor
DT 0 TH
0
TC0 applied on both hot and cold sides elements is:
of the TEG module is seen as 0
hc V O I DT TH TC0
DT TH TC < DT 0 at the terminals of the p and hc 60
n semiconductor elements. TC : 13
2
Using the duality between electrical and thermal By replacing TC by its expression in Eq. 10, the
phenomena, a thermal modeling of the TEG module expression of the thermal gradient at the terminals
with contact thermal resistance can be represented of the p and n elements with contact thermal
as in Fig. 2.19 This duality allows representing the resistance can be given by:
temperature by an electrical voltage, the heat flow
by an electrical current, and the thermal resistance 1
by an electrical resistance. DT
0 a hc hm I hm 2 hc
The main goal of using the above mentioned DT cnst;hc 60
electro-thermal duality is to model the TEG module 14
fhc hm a hc VO RE I 2
as an equivalent Thevenin circuit (fully electrical hc 60
model). To achieve this, the same approach is used
0
throughout the paper: the electrical power of the VO a TH TC0 I hm DT 0 g:
hc 60
TEG module is derived and presented as more as
possible under the following form P Veq I Req I 2 , It should be noted that DT DT0 cnst;hc 60 is load
where Veq is the equivalent Thevenin generator and current-dependent.
Req is the corresponding equivalent resistance The output voltage across the load RL can be
respectively. In the further discussion, hm is the defined by the following expression:
thermal resistance of N pairs of p and n semicon-
ductor elements, whereas hc is the contact thermal VO a DT 0 RE I: 15
hc 60 DT cnst;hc 60
resistance of contact plates on the top and the By substituting Eq. 15 in Eq. 14, the thermal
bottom of the p and n elements. Each junction gradient at the terminals of the p and n elements
formed by p and n elements is connected to two becomes:
metal contacts from the top and bottom (see Fig. 1), !
which can be modeled by two series resistors with 1
the value of hc =N.27 DT
0 a2 h2c hm I 2 hm 2 hc
From Fig. 2, the expression of the heat flow DT cnst;h 60
c
through the metal contacts on the hot side of the
fa RE h2c hm I 3 a hc hm TH
0
TC0 I hm DT 0 g:
TEG module can be written as:
16
T 0 TH
QH H : 9 Therefore, the open circuit voltage generated by the
hc TEG module is expressed with:
This heat flow is equal to the one flowing through
the TEG module (see Eq. 1), which allows writing:
VOC aDT 0 I 0
0 DT cnst;hc 60
TH a hm TH I 12 RE hm I 2 TC TH
0
TH DT cnst;hc 60 17
: 10
hm hc hm 0
aDT :
h m 2 hc
The difference between QH and QC (Eqs. 1 and 2)
provides the relationship between the heat flow The output voltage across the load RL can be
difference and the power transmitted to the load RL : expressed by:
44 Siouane, Jovanovic, and Poure
a RL DT DT 0 cnst;hc 60
hm
VO P aDT 0 I
RL RE hm 2 hc
DT 0 cnst;hc 60 DT 0 cnst;hc 60
a RL hm a hc IRE hc I TH 0
TC0 DT 0
2 a2 hc h m
: RE T 0 TC0 I 2 :
RL RE a2 h2c hm I 2 hm 2 hc hm 2 hc H
18 23
with:
If we apply the same approximation to Eq. 20, the
VO DT 0 cnst;hc 60 output voltage VO of the TEG module becomes:
RL : 19
I
By substituting Eq. 19 in Eq. 18, the resulting hm
VO aDT 0
expression of the output voltage as a function of 0 hm 2 hc
the load current I is derived:
DT cnst;hc 60 24
! a2 hc hm
RE T 0 TC0 I:
1 hm 2 hc H
VO
0 a2 h2c hm I 2 hm 2 hc
DT cnst;hc 60
20 Consequently, under constant temperature gra-
0
f a2 hc hm TH TC0 RE hm 2 hc I dient conditions, the TEG module with contact
a hm DT 0 g: thermal resistance hc can also be modeled by an
The electrical power generated by the TEG module equivalent constant voltage source Veq in series with
is defined as the product of the output voltage VO an equivalent internal resistance Req (Thevenin
with the load current I, and can be expressed with equivalent circuit):
the following expression: hm
! Veq 0 aDT 0 : 25
1 DT cnst;hc 60 hm 2hc
P
0 a2 h2c hm I 2 hm 2 hc 0
DT cnst;hc 60
21 a2 hc hm TH TC0
0
Req RE : 26
f a2 hc hm TH TC0 RE hm 2 hc I 2 DT 0 cnst;hc 60 hm 2hc
a hm DT 0 Ig:
As expected,
Conclusion
lim P 0 P 0 : 22 To conclude this section, one can summarize the
hc !0 DT cnst;hc 60 DT cnst;hc 0
results of the proposed unified approach to model
Knowing that when the contact thermal resistance the TEG module as a Thevenin equivalent circuit
converges towards zero (hc ! 0), the thermal gradi- under constant temperature gradient conditions.
ent DT 0 is equal to DT (Eq. 3). The equivalent electrical model of the TEG module
Equation 21 does not allow expressing the elec- under constant temperature gradient conditions can
trical power generated by the TEG module in the be represented as in Fig. 3, where Veq and Req are
desired form with equivalent voltage and resistance, given by Eqs. 7 and 8 for the model without contact
as was the case without contact thermal resistance thermal resistance, and by Eqs. 25 and 26 for the
(Eq. 6). For these reasons, an approximate expres- model with contact thermal resistance.
sion of the electrical power can be proposed. This
can be achieved by neglecting the term a2 h2c hm I 2
behind hm 2 hc . The VI characteristic of the TEG
module with the contact thermal resistance is
nonlinear, due to the term a2 h2c hm I 2 . Analytically,
this non-linearity occurs for large values of the load
current greater few orders of magnitude than the
short-current value ISC , which explains why this
term can be neglected. Moreover, the VI charac-
teristic is linear for positive values of the load
current, I > 0. This approximation is also justified
by the order of magnitude of a2 104 , whereas the
order of magnitudes of other parameters is about
unity. By applying this approximation to Eq. 21, it Fig. 3. Equivalent electrical model of the TEG under constant tem-
becomes: perature gradient conditions.
Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance 45
Under Different Operating Conditions
TEG ELECTRICAL MODELING UNDER
CONSTANT HEAT FLOW CONDITIONS
P aQH hm I fRE a2 QH h2m
QH cnst;hc 0
In most practical applications, as in the case of
thermal energy recovery systems for automobile aRE hm
a2 hm TC0 a3 h2m TC0 a3 h3m QH I 30
exhaust gas, the TEG module is subject to a constant 2
thermal input flow instead of a constant temperature a2 RE h2m 2 2
gradient. This is designated as constant heat a4 h3m TC0 a4 QH h4m I gI :
2
operation conditions in the literature. Kumar Consequently, under constant heat flow conditions,
et al.28 observed a significant difference between the TEG module without contact thermal resistance
the electric power generated by a TEG module with can also be modeled by an equivalent constant
an exhaust gas flow rate and with a temperature voltage source Veq in series with a variable equiv-
gradient. Even if the available input thermal heat
alent internal resistance Req (Thevenin equivalent
flow changes over time, its rate of variation will be
circuit):
few order of magnitude slower than the dynamic
electrical response of the TEG module.29
Veq ahm QH : 31
In this section, by applying the same approach QH cnst;hc 0
used in the previous sections for the TEG module
under constant gradient conditions, the equivalent
Req RE a2 QH h2m a2 hm TC0
fully electrical models of the TEG module without QH cnst;hc 0
and with contact thermal resistance under constant aRE hm
heat flow conditions are presented. In both cases, a3 h2m TC0 a3 h3m QH I 32
2
the input thermal power QH flowing through the
TEG module and the cold source temperature TC0 a2 RE h2m 2
a4 h3m TC0 a4 QH h4m I :
are assumed constant throughout this discussion. In 2
most TEG systems, the cold side temperature
remains almost constant with relatively small
changes in thermal power flowing into the cold TEG Electrical Modeling with Contact
side.25 Moreover, to the best of our knowledge, no Thermal Resistance
fully electrical TEG model under constant heat flow
conditions has been previously presented in the Using the expression of the thermal gradient at
literature. the terminals of the p and n elements under
constant heat flow conditions given by Eq. 27, and
TEG Electrical Modeling Without Contact knowing that TC0 is different from TC when consid-
Thermal Resistance ering contact thermal resistance, the thermal gra-
dient at the terminals of the p and n elements with
Given that the contact thermal resistance hc is not contact thermal resistance can be expressed as:
taken into account, Eq. 3 is verified. Moreover, from
1
RE hm I 2 a hm TC I QH hm
Eq. 1 it can be obtained:
DT 2 : 33
QH cnst;hc 60 1 ahm I
1
RE hm I 2 ahm Tc0 I hm QH
DT 2 : 27 By substituting the expression of TC given by Eq. 13
QH cnst;hc 0 1 ahm I in Eq. 33, we obtain:
The open circuit voltage VOC of the TEG module is
expressed with: 1
DT
ahm I 2
VOC a DT QH cnst;hc 60
QH cnst;hc 0 QH cnst;hc 0;I0 28 0
fhm RE a hc VO I 2 ahm TH TC0 I
ahm QH : hc 60
The electrical power delivered by the TEG module is 2QH hm g:
defined by:
34
However, this thermal gradient must be expressed
P aDT I RE I 2
QH cnst;hc 0 QH cnst;hc 0 only as a function of QH and TC0 . From Eq. 9 we can
12 ahm RE I 3 RE a2 hm TC0 I2 ahm QH I write:
:
1 ahm I 0
TH TH QH hc DT TC QH hc : 35
29 and from Eq. 12:
An approximate expression of this electrical power
can be proposed by using the development of TC hc VO I TC0 QH hc : 36
Maclaurin up to the 4th order: hc 60
46 Siouane, Jovanovic, and Poure
By substituting Eq. 36 in Eq. 35, and then by The choice to develop only up to the 4th order
substituting the result in Eq. 34, the thermal using Maclaurin series can be justified by the
gradient across the p and n elements becomes:
results reported by Montecucco et al.25 where a
quadratic relationship between the TEGs output
1
DT voltage and the temperature gradient has been
1 ahm I observed experimentally. If this nonlinear voltage
QH cnst;hc 60
1 relationship is transposed to the power, the four
fhm RE a hc VO I 2 ahm TC0 QH hc I order polynomial current dependence is obtained.
2 hc 60
As expected, under constant heat flow conditions:
QH hm g: 37
As expected, under constant heat flow conditions:
lim P P : 43
hc !0
QH cnst;hc 60 QH cnst;hc 0
lim DT DT : 38
hc !0
QH cnst;hc 60 QH cnst;hc 0
Applying the same development of Maclaurin to
The open circuit voltage of the TEG module is Eq. 40, the output voltage of the TEG module becomes:
given by:
n
VO aQH hm RE a2 hc hm QH
VOC aDT I 0
QH cnst;hc 60
QH cnst;hc 60 39 h aR h
QH cnst;hc 60
E m
ahm QH : a2 h2m QH a2 hm TC0 a3 h2m TC0
i 2 h
By following the same analysis used for the determi- a3 h3m QH 2a3 h2m hc QH I a4 h3m TC0 a4 QH h4m
nation of the output voltage in TEG Electrical
Modeling with Contact Thermal Resistance section, a2 RE h2m
the output voltage of the TEG module can be obtained: a2 RE hm hc a4 h2m hc QH hc 3hm
2 i o
1 a4 h3m h2c TC0 I 2 I: 44
VO
a2 hc hm I 2 ahm I 1
QH cnst;hc 60
1 Consequently, under constant heat flow conditions,
aRE hm I 2 RE a2 hm TC0 a2 QH hc hm I
2 the TEG module with contact thermal resistance can
also be modeled with an equivalent constant voltage
aQH hm : 40 source Veq in series with a variable equivalent
internal resistance Req (Thevenin equivalent circuit):
By the same, the electrical power generated by
the TEG module is given by: Veq ahm QH : 45
QH cnst;hc 60
1
P
a2 hc hm I2 ahm I 1 Req RE a2 hc hm QH a2 h2m QH
QH cnst;hc 60 QH cnst;hc 60
1 aRE hm
aRE hm I 3 RE a2 hm TC0 a2 QH hc hm I 2 a2 hm TC0 a3 h2m TC0 a3 h3m QH
2 2
a2 RE h2m
aQH hm I : 41 2a3 h2m hc QH I a4 h3m TC0 a4 QH h4m
2
Similarly, using the development of Maclaurin up to a2 RE hm hc a4 h2m hc QH hc 3hm
the 4th order, the expression of the electrical power a4 h3m h2c TC0 I 2 : 46
can be approximated with:
n
P aQH hm I RE a2 hc hm QH
QH cnst;hc 60
h aR h
E m
a2 h2m QH a2 hm TC0 a3 h2m TC0
i 2 h
a3 h3m QH 2a3 h2m hc QH I a4 h3m TC0 a4 QH h4m
a2 RE h2m
a2 RE hm hc a4 h2m hc QH hc 3hm
2 i o
a4 h3m h2c TC0 I 2 I 2 : 42 Fig. 4. Equivalent electrical model of the TEG module under con-
stant heat flow conditions.
Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance 47
Under Different Operating Conditions
Table I. Summary of electrical modeling of the TEG module under constant temperature gradient and heat
conditions
Constant DT 0 Constant QH
Fig. 7. VO f I; hc under constant temperature gradient conditions. Fig. 8. VO f I; hc under constant heat flow conditions.
Figure 5 shows the TEGs electrical power versus the curves with markers used to represent the
load current for different values of the contact approximated expression given by Eq. 44. This result
thermal resistance hc under constant temperature justifies the validity of the approximation made with
gradient conditions. The parabolic curves in lines the development of Maclaurin. Unlike the constant
result from the analytical expression of the electri- temperature gradient conditions, the TEG module
cal power without approximation (Eq. 21), and the under constant heat flow conditions has the same
curves with markers result from the approximate open circuit voltage VOC , whatever the value of the
one (Eq. 23). It can be seen from Fig. 5 that the contact thermal resistance hc . The slope of the VI
electric power of the TEG module obtained with the characteristic in this case is slightly modified with hc .
proposed approximated expression is close to the This can explained by comparing the equivalent
exact one. As expected from the physical modeling internal electrical resistance of the TEG module with
studies, the electrical power decreases as hc hc 0 and hc 6 0 given by Eqs. 32 and 46 respec-
increases.22,23 This electrical power reduction tively, which are almost equal. The main difference
results from the decrease of the effective thermal lies in the additional terms present in Eq. 46 whose
gradient applied to the TEG module, which moves contribution is low since they are multiplied either by
from DT 0 to DT (DT < DT 0 ), essentially caused by the a2 or a4 .
presence of the contact thermal resistance hc .
Figure 6 shows the TEGs electrical power versus
load current for different values of the contact CONCLUSION
thermal resistance hc under constant heat flow
conditions. Similarly as in the constant temperature In this study, the fully electrical modeling of the
gradient case, the parabolic curves in lines result TEG module taking into account its contact thermal
from the exact analytical expression of the electrical resistance under different operation conditions is
power (Eq. 41), whereas the curves with markers presented and discussed. An unified fully electrical
result from the approximate expression obtained by TEG modeling approach based on a Thevenin
using the development of Maclaurin (Eq. 42). As in equivalent circuit were proposed and the analytical
the previous case, the electrical power decreases as hc expressions of the parameters Veq and Req were
increases. However, this decrease is smaller com- identified without and with the contact thermal
pared to the one obtained in the case of the TEG resistance: first under constant temperature gradi-
module under constant temperature gradient condi- ent, and second under constant heat flow conditions.
tions. It does mean that the electrical modeling of the The electrical model of the TEG module under
TEG under constant heat flow conditions is very little constant temperature gradient conditions is linear
influenced by the presence of hc compared to the one and depends only on the TEGs electrical and
under constant temperature gradient conditions. thermal parameters. On the other hand, the elec-
Figure 7 shows the TEGs output voltage VO versus trical model of the TEG module under constant heat
load current I for different values of the contact flow conditions is non linear and load current
thermal resistance hc under constant temperature dependent. The proposed fully electrical TEG mod-
gradient conditions. It can be seen that the exact els were validated through simulation. The obtained
analytical expression of the output voltage of the TEG simulation results fit into the already reported
module (Eq. 20) presented with lines for different physical behaviour of the TEG modules presented
values of the contact thermal resistance are super- in recent research studies.22,23,25 The proposed fully
posed to the curves with markers used to present the electrical models of the TEG module can be used in
approximated expression given by Eq. 24. This justi- the design of the TEG powered electronics circuits
fies the validity of the used approximation. The and systems in simulation and modeling phases as
equivalent internal resistance of the TEG module well in the development of the most adapted MPPT
Req determines the slope of the linear VI character- techniques to maximize the harvesting of the avail-
istic. As expected from the physical modeling studies, able waste thermal energy.1,26
Fig. 7 illustrates that more hc increases, more the
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