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ELE201
Unified Electrical Laboratory-I
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TABLE OF CONTENTS
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EXPERIMENT 1
Experiment :
To implement Full Adder using NAND gates.
Material Required: -
IC 7486, IC 7432, IC 7408, IC 7400, etc.
Learning Objectives:
Students will know how to make Full adder with help of basic NAND gates
Full Adder using basic gates:-
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Outline of the Procedure: -
1. Verify the gates.
2. Make the connections as per the circuit diagram.
3. Switch on VCC and apply various combinations of input according to the
truth table.
4. Note down the output readings for half/full adder and half/full subtractor
sum/difference and the carry/borrow bit for different combinations of inputs.
Required Results:-
Full Adder Truth Table:
Cautions:
1. Connections must be Tight.
2. Pin Configuration of ICs must be considered carefully before use
3. Continuity of ICS must be tested before use.
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EXPERIMENT 2
Experiment :
To design and realize MOD 10 UP/DOWN Counter
Apparatus Required: -
Learning Objectives:
Students will learn the working of Counter
The trick is to find a way not to use all of those states. There must be a way to force the
counter to stop counting at 9 and roll over to 0.
This is where the asynchronous inputs come into play. The asynchronous inputs can override the
synchronous inputs and force the output either high or low.
When Preset = 1, Q = 1
When Clear = 1, Q = 0
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Since the counter has to display 1001, the next number 1010 will be used to reset the counter to
zero. Since the asynchronous inputs are active high, an AND gate will be used. The two flip-flops
where a 1 occurs will be tied to an AND gate, and the output will be tied to the clear input.
When the counter goes to 1010, the AND gate will have a 1 on its output and will activate the
clear inputs. This will reset the counter to 0000. The 1010 will never be displayed. In
essence,the counter counted/displayed from 0000 to 1001.
Cautions:
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EXPERIMENT 3
Experiment :
To realize a 7-segment code converter
Apparatus required:
Learning Objective
Learning of 7-segment
Outline of procedure:
Seven-Segment LEDs
The seven-segment LED display has four individual digits, each with a decimal point. Each of
the seven segments (and the decimal point) in a given digit contains an individual LED. When
a suitable voltage is applied to a given segment LED, current flows through and illuminates
that segment LED. By choosing which segments to illuminate, any of the nine digits can be
shown.
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Pin Connections
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There are two important types of 7-segment LED display.
In a common cathode display, the cathodes of all the LEDs are joined together and the
individual segments are illuminated by HIGH voltages.
In a common anode display, the anodes of all the LEDs are joined together and the individual
When the 4511 is set up correctly, the outputs follow this truth table:
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Cautions:
1. Connections must be Tight.
2. Pin Configuration of ICs must be considered carefully before use
3. Continuity of ICS must be tested before use.
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EXPERIMENT 4
Experiment :
To realize A/D converters. To realize D/A converters.
Apparatus Required: -
Learning Objective:
Students will understand significance and working of A/D and D/A converters
Outline of procedure:
Digital-to-analog converter
A digital-to-analog converter (DAC or D-to-A) is a device for converting a digital (usually
binary) code to an analog signal (current, voltage or electric charge).
A DAC, inputs a binary number and outputs an analog voltage or current signal. In block
diagram form, it looks like this:
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Each input voltage is either zero volts or five volts and represents a logical 0 or 1.
1. The input resistors are chosen so that they are not all equal.
2. The resistors are related by: Rc = 2Rb = 4Ra.
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A2 A1 A0 Binary 4A2+2A1+Ao
0 0 0 0 0
0 0 1 1 1
0 1 0 2 2
0 1 1 3 3
1 0 0 4 4
1 0 1 5 5
1 1 0 6 6
1 1 1 7 7
ADC
ADC Using Lm399
BACKGROUND
Digital-to-Analog converters (DACs) and Analog-to-Digital converters (ADC) are important
building blocks which interface sensors (e.g. temperature, pressure, light, sound, cruising speed
of a car) to digital systems such as microcontrollers or PCs. An ADC takes an analog signal and
converts it into a binary one, while a DAC converts a binary signal into an analog value. Figure 1
gives a block diagram of such a system. An example of such a system is a PC sound card.
Figure
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Analog-to-Digital Converter
An ADC takes an analog input and generates a digital output as shown in Figure 2a. The more
bits the output word has the better the resolution. For a 3-bit ADC, the number of steps will be 8
(=23) while a 10-bit ADC will divide the analog signal up into 1024 (=210) steps.
The input-output relationship of an ADC is shown in Figure 2b for a 3-bit converter. Notice that
when the analog input signal (on the horizontal axis) reaches a certain level, a new digital code
will be generated (see vertical axis in Figure 2b) which represents the digital output of the ADC
as a function of the analog input. The maximum analog signal the ADC can accommodate is
called the Full Scale (FS) as is shown in Fig. 2b. As an example, if the analog input is equal to
(Full Scale), the output code for the example of Figure 2b will be (100). However, if
one increases the magnitude of the input signal above , the new digital output code will
be (101).
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The circuit consists of 4 comparators whose inverting inputs are connected to a voltage divider. A
comparator is basically an operational amplifier used without feedback. The outputs of the
comparators in Figure 3 correspond to a digital word. When the input rises above VN1 , the first
comparator will switch to a high output voltage (positive rail), causing the LED to light up,
indicating a (0001). For larger input voltages the output of other comparators will switch high as
well. For large input voltages (above Vn3) all comparators will be high corresponding to (1111)
digital output. Thus the comparators encode the analog input as a digital word on a thermometer
scale.
All comparators work in parallel which makes this ADC very fast. For that reason it is called a Flash
Converter.
Notice that a 1 kOhm resistor has been added between the power supply and the output of the
comparators. This has been done to ensure that the output voltage of the comparators is high enough (the
comparators have an open collector - don't worry what that means at this point).
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Cautions:
1.All connections must be tight.
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EXPERIMENT 5
Experiment :
Realize JK FF using D FF.
Material Required: - D FF(IC7474) , connecting wires, breadboard, power supply + 5volt
Outline of Procedure :
The basic J-K Flip-flop is shown in Figure.
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SR Flip Flop
Like the R-S flip-flop the outputs follow the inputs when the Clk is logic, but there are two
inputs, traditionally labelled J and K. If J and K are different then the output Q takes the
value of J at the next clock edge. If J and K are both low then no change occurs. If J and K
are both high at the clock edge then the output will toggle from one state to the other. It can
perform the functions of the R-S Flip- flop and has the advantage that there are no
ambiguous states. Due to the extra logic that ensures only one of the R and S inputs is
enabled at any time. This prevents possible oscillation, which can occur when both inputs of
an RS flip-flop are active at the same time. The truth table of this J-K flip-flop is shown in
Table 1.
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J K Clk Q Q_bar
0 0 Pos-edge No change
0 1 Pos-edge 0 1
1 0 Pos-edge 1 0
1 1 Pos-edge Toggle
Table 1 Truth table for the simple J-K Flip-flop of Figure
One problem with the basic J-K Flip-flop is that spikes can appear on the output and there is an
unstable state when both J & K inputs are logic 0.
This can be eliminated by adding another latch circuit of this flip-flop to isolate the outputs Q
and Q bar from the inputs J & K as shown in Figure 3.
The inverter connected between the two CLK inputs ensures that the two sections will be
enabled during opposite half-cycles of the clock signal.
Cautions:
1. Pin Configuration of ICs must be considered carefully before use
2. Continuity of ICs must be tested before use.
3. Properly supply 5V to the VCC of ICs and should be properly ground.
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EXPERIMENT 6
Experiment :
Design and implement a sequence generator which generates 10111 sequence using D FF.
Material required: -
IC 7495, IC 7486 etc.
Learning Objectives:
Students will learn about flip flops.
Design:
To generate a sequence of length S it is necessary to use at least N number of Flip-Flops, which
satisfies the condition S 2N -1
The given sequence length S= 15.
Therefore N =4.
Note: There is no guarantee that the given sequence can be generated by 4 f/fs. If the sequence is
not realizable by 4 f/fs then 5 f/fs must be used and so on.
Outline of Procedure:
1. Connections are made as per the circuit diagram.
2. Clock pulses are applied one by one and truth table is verified.
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K- Map
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Result:
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DESIGN 2:
Cautions :
in 1.Pin Configuration of ICs must be considered carefully before use
2.Continuity of ICS must be tested before use
3. Connect the circuit as per circuit diagram
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EXPERIMENT 7
Experiment :
To design and implement an emitter follower circuit. To find gain of the transistor in CE, CB and
CC configuration.
( a ) gain of the transistor in CE configuration.
Apparatus Required: -
COMPONENTS REQUIRED:
(010)mA 1
2 Ammeter
(01)A 1
(030)V 1
3 Voltmeter
(02)V 1
Learning Objectives:
Students will learn working of transistors.
THEORY:
A BJT is a three terminal two junction semiconductor device in which the
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conduction is due to both the charge carrier. Hence it is a bipolar device and it
amplifier the sine waveform as they are transferred from input to output. BJT is
classified into two types NPN or PNP. A NPN transistor consists of two N types in
between which a layer of P is sandwiched. The transistor consists of three terminal emitter,
collector and base. The emitter layer is the source of the charge carriers and it is heartily
doped with a moderate cross sectional area. The collector collects the charge carries and
hence moderate doping and large cross sectional area. The base region acts a path for the
movement of the charge carriers.In order to reduce the recombination of holes and electrons
the base region is lightly doped and is of hollow cross sectional area. Normally the transistor
operates with the EB junction forward biased.
In transistor, the current is same in both junctions, which indicates that there is a
transfer of resistance between the two junctions. One to this fact the transistor is known as
transfer resistance of transistor.
Outline of Procedure:
INPUT CHARECTERISTICS:
OUTPUT
CHARECTERISTICS:
E C
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MODEL GRAPH:
INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:
IC
IB
VBE
VCE
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TABULAR COLUMN:
INPUT CHARACTERISTICS:
Sr no VCE=1 VCE=2
V V
VBE(V) IB(A) VBE(V) IB(A)
OUTPUT CHARACTERISTICS:
Sr no IB=20A IB=40A
VCE(V) IC(mA) VCE(V) IC(mA)
1
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h- PARAMETER CALCULATION :
%age ERROR :
hie, hre, hfe, hoe and compare these values with practically obtained values to
find %age error
RESULT:
The transistor characteristics of a Common Emitter (CE) configuration were plotted and
uses studied.
CHARACTERISTICS OF CB CONFIGURATION USING BJT
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THEORY:
In this configuration the base is made common to both the input and out. The
emitter is given the input and the output is taken across the collector. The current gain of this
configuration is less than unity. The voltage gain of CB configuration is high. Due to the
high voltage gain, the power gain is also high. In CB configuration, Base is common to both
input and output. In CB configuration the input characteristics relate IE and VEB for a
constant VCB. Initially let VCB = 0 then the input junction is equivalent to a forward biased
diode and the characteristics resembles that of a diode. Where VCB =
+VI (volts) due to early effect IE increases and so the characteristics shifts to the left.
The output characteristics relate IC and VCB for a constant IE. Initially IC increases and
then it levels for a value IC = IE. When IE is increased IC also increases
proportionality. Though increase in VCB causes an increase in , since is a fraction, it is
negligible and so IC remains a constant for all values of VCB once it levels off.
PIN DIAGRAM:
B
E C
CIRCUIT
DIAGRAM: (0- (0-30)mA
1)mA + -
+ - 1K
10 K -
+
+ +
(0-30)V
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OUTLINE OF PROCEDURE:
INPUT CHARACTERISTICS:
It is the curve between emitter current I E and emitter-base voltage VBE at constant
collector-base voltage VCB.
1. Connect the circuit as per the circuit diagram.
2. Set VCE=5V, vary VBE in steps of 0.1V and note down the corresponding I B.
Repeat the above procedure for 10V, 15V.
3. Plot the graph VBE Vs IB for a constant VCE.
4. Find the h parameters.
OUTPUT CHARACTERISTICS:
It is the curve between collector current I C and collector-base voltage VCB at
constant emitter current IE.
1. Connect the circuit as per the circuit diagram.
2. Set IB=20A, vary VCE in steps of 1V and note down the corresponding I C.
Repeat the above procedure for 40A, 80A, etc.
OUTPUT CHARACTERISTICS:
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INPUT CHARACTERISTICS:
I
C
(mA) VCB1
IE2
VCB2
OUTPUT CHARACTERISTICS:
IC
(mA)
IC2
IC1
%age ERROR :
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from data sheet find values of
hic, hrc, hfc, hoc and compare these values with practically obtained values to
find %age error
APPARATUS REQUIRED:
COMPONENTS REQUIRED
THEORY:
A BJT is a three terminal two junction semiconductor device in which the conduction is
due to both the charge carrier. Hence it is a bipolar device and it amplifier the sine
waveform as they are transferred from input to output. BJT is classified into two types
NPN or PNP. A NPN transistor consists of two N types in between which a layer of P is
sandwiched. The transistor consists of three terminal emitter, collector and base. The emitter
layer is the source of the charge carriers and it is heartily doped with a moderate cross
sectional area. The collector collects the charge carries and hence moderate doping and large
cross sectional area. The base region acts a path for the movement of the charge carriers.
In order to reduce the recombination of holes and electrons the base region is lightly doped
and is of hollow cross sectional area.
Normally the transistor operates with the EB junction forward biased.
In transistor, the current is same in both junctions, which indicates that there is a transfer of
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resistance between the two junctions. One to this fact the transistor is known as transfer
resistance of transistor.
PIN DIAGRAM:
E C
CIRCUIT DIAGRAM:
Outline of Procedure:
INPUT CHARECTERISTICS:
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1. Connect the circuit as per the circuit diagram.
2. Set VCE, vary VBE in regular interval of steps and note down the corresponding
IB reading. Repeat the above procedure for different values of V CE.
3. Plot the graph: VBC Vs IB for a constant VCE.
OUTPUT CHARECTERISTICS:
MODEL GRAPH:
0 VBC(V) 0 VCE(V)
TABULAR COLUMN:
INPUT CHARACTERISTICS:
VCE=1V VCE=2V
VBC(V) IB(A) VBC(V) IB(A)
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OUTPUT CHARACTERISTICS:
IB=20A IB=40A
VCE(V) IE(mA) VCE(V) IE(mA)
h- PARAMETER CALCULATION :
%age ERROR :
from data sheet find values of hie, hic , hfc, hoe and compare these values with practically
obtained values to find %age error
RESULT:
The transistor characteristics of a Common Emitter (CC) configuration were plotted.
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(i)hie
(ii)hic
(iii)hfc
(iv)hoe
Cautions :
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EXPERIMENT 8
Experiment : To find gain of the JFET and MOSFET.
APPARATUS REQUIRED:
1 R.P.S (0-30)V 2
2 Ammeter (030)mA 1
(030)V 1
3 Voltmeter
(0-10)V 1
COMPONENTS REQUIRED:
1 FET BFW10 1
1k 1
2 Resistor
68K 1
Bread
3 1
Board
4 Wires
Learning Objective:
THEORY:
FET is a voltage operated device. It has got 3 terminals. They are Source, Drain & Gate.
When the gate is biased negative with respect to the source, the pn junctions are reverse
biased & depletion regions are formed. The channel is more lightly doped than the p type
gate, so the depletion regions penetrate deeply in to the channel. The result is that the channel
is narrowed, its resistance is increased, & I D is reduced. When the negative bias voltage is
further increased, the depletion regions meet at the center & ID is cutoff completely.
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Outline of PROCEDURE:
DRAIN CHARACTERISTICS:
1. Connect the circuit as per the circuit diagram.
2. Set the gate voltage VGS = 0V.
3. Vary VDS in steps of 1 V & note down the corresponding I D.
4. Repeat the same procedure for VGS = -1V.
5. Plot the graph VDS Vs ID for constant VGS.
OBSERVATIONS
1. d.c (static) drain resistance, rD = VDS/ID.
2. a.c (dynamic) drain resistance, rd = VDS/ID.
3. Open source impedance, YOS = 1/ rd.
TRANSFER CHARACTERISTICS:
1. Connect the circuit as per the circuit diagram.
2. Set the drain voltage VDS = 5 V.
3. Vary the gate voltage VGS in steps of 1V & note down the corresponding I D.
4. Repeat the same procedure for VDS = 10V.
5. Plot the graph VGS Vs ID for constant VDS.
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CIRCUIT DIAGRAM:
MODEL GRAPH:
DRAIN CHARACTERISTICS:
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TRANSFER CHARACTERISTICS:
VDS (volts)
ID(mA)
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TABULAR COLUMN:
DRAIN CHARACTERISTICS:
VGS = 0V VGS = -
1V
VDS (V) ID(mA) VDS (V) ID(mA)
TRANSFER CHARACTERISTICS:
VDS =5volts VDS = 10volts
VGS (V) ID(mA) VGS (V) ID(mA)
%age ERROR :
from data sheet find values of
gmo and IDSS to get values of Rdgm IDSS VP using formulas and compare these values
with practically obtained values to find %age error
RESULT:
Thus the Drain & Transfer characteristics of given FET is Plotted.
Rd =
gm =
=
IDSS =
Pinch off voltage VP =
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MOSFET
Objective
The objective of this experiment is to introduce you to the MOSFET (Metal Oxide
Semiconductor Field Effect Transistor) and give you the chance to examine its I/V characteristics
and measure some of its important parameters. The MOSFET that we will use in this experiment
is IRF620. Check its datasheet here:
http://www.datasheetcatalog.org/datasheet/SGSThomsonMicroelectronics/mXqsuz.pdf
Procedure
Threshold Voltage Measurement
1. Connect the circuit shown in Fig. 1.
2. Increase VDD until V1k becomes 0.25V (250 mV).
3. At that point, measure and record the value of VGS using a DC voltmeter.
4. Then your MOSFET's threshold (Vt ) can be taken approximately as Vt VGS.
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Results, Calculations and Questions,
1. On one graph, plot ID (mA) vs. VDS (V) for each value of VGS. You should have four curves
(family of curves on one graph). Label each curve with the corresponding values of VGS. Also,
show VDS(sat) for each curve. What is the shape of the relationship between I D and VDS(sat)?
Label the three regions of operation on your graph (cutoff, linear, saturation).
2. At VDS = 1 V, plot the relationship between ID (mA) and VGS (V). What is the name of this
relationship?
The slope of this relationship gives you the transconductance, gm, a small signal parameter. Find
gm at ID= 2mA.
3.Given that gm = calculate gm and compare that to what you have found above.
4.Also, given that gm= kn (VGS-Vt), and knowing gm from the previous step, calculate the
constant kn .
Cautions :
i1.Carefully observe the readings
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EXPERIMENT 9
Experiment :
To perform experiment on clipping, biased clipping and clamping
Equipment required:
Function Generator, Oscilloscope, DC Power Supply.
Material required:
Breadboard, Diodes, Capacitors and Resistors
Learning Objective:
To steady the diode applications in a clipping and clamping circuits.
Theory:
This experiment studies the applications of the diode in the clipping & clamping
operations.
1. Clipping Circuits:
the Figure (l) shows a biased clipper, for the diode to turn in the input voltage must be
greater +V, when Vm is greater than +V , the diode acts like a closed switch (ideally)
& the voltage across the output equals +V , this output stays at +V as long as the input
voltage exceeds +V.
when the input voltage is less than +V , the diode opens and the circuit acts as a
voltage divider, as usual , RL should be much greater than R, in this way , most of
input voltage appears across the output.
The output waveforms of Figure (1) summarize the circuit action. The biased clipper
removes all signals above the (+V) level.
2. Clamping Circuits:
A clamper does is adding a DC component to the signal. In Figure (2) the input signal
is a sinewave, the clamper pushes the signal upward, so that the negative peaks fall on
the 0V level. As can see, the shape of the original signal is preserved, all that happen
is a vertical shift of the signal.
We described an output signal for a positive dampen- On the Figure (2) shown
represents a positive clamper ideally here how it is works. On the first negative half
cycle of input voltage, the diode turns on.
At the negative peak, the capacitor must charge to V p with polarity shown. Slightly
beyond the negative peak, the diode shunts off.
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Outline of Procedure:
Clipping Circuit:
1. Connect the circuit shown in Figure (3).
2. Ensure that the variable DC is at minimum and the source is at 10V P.P.
3. Observe and Sketch the input and output waveforms.
4. Increase the variable DC voltage to 4V, and notice to what voltage are the Positive peaks chopped
off, sketch the waveforms.
Clamping Circuit:
1. Connect the circuit shown in Figure (4).
2. Ensure the variable DC is at minimum.
3. Set the sine wave generator frequency to 1KHz and its output amplitude to 10V P.P
4. Observe and sketch the input waveform with the variable DC at minimum,
Sketch the output waveform.
Discussion:
1. What happened if the DC voltage in the clamping circuit is replaced by an a.c source?
2. What is the relationship between the clipping level and the DC voltage?
3. If the variable DC source is reversed, how does this affect the clipping?
4.If the input voltage 10VP.P, sketch the output of the circuit shown below.
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Cautions :
i1.Properly ground the circuit.
2.All connections must be tight
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EXPERIMENT 10
Experiment :
To perform experiment on voltage regulation
Apparatus Required:
Resistor ( 0 1 Kohm) , Zener Diode, Voltmeters, Variable DC Supply
Objectives:
To recognize zener diodes in various physical forms and to distinguish them from
rectifying diodes.
To understand the constant-voltage characteristic of a reverse-biased zener diode.
To understand the use of a zener diode in a simple voltage regulator circuit.
Outline Of Procedure:
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Plot Vd against Id and also plot Vs against Pd
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A Simple Zener Diode Voltage Regulator
The Zener diode has a region in its reverse characteristics of almost constant voltage
regardless of the current through the diode. This can be used to regulate or stabilize a
voltage source against supply or load variations.
A Zener diode whose breakdown voltage is the desired constant voltage is connected
across the load as shown in Figure
Now set the potentiometer temporarily to make I L=0, and then slowly increase V S
until the diode just begins to conduct current, say 1mA. Record V S and IL=0 in the
first row of the table.
Now set the potentiometer to maximum (clockwise). The extra current drawn by R L
will reduce the diode current to below 1mA.
Increase VS to 12V; the diode current will increase above 1mA. Then adjust RL until
the diode current just returns to approximately 1mA. Again record V S and IL
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Repeat this for VS=14, 16, 18 and 20V.
Every point on your graph represents a condition where the Zener diode has only just
reached its breakdown voltage. Thus, for a given I L, a lower value of VS will take the
diode out of breakdown and, for a given V S, a higher value of IL will do the same.
Therefore the whole of one side of your graph is an area where the diode is not in
breakdown and thus is not holding VL constant. Mark this area in your graph.
What sets a limit to the minimum load current and the maximum supply voltage?
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Reduce VS in steps of 1V, each time resetting RL to give Id=150mA approximately
and record IL. Continue until it is no longer possible to set I d to 150mA.
Plot VS against IL on the same axes used for your previous graph
Shade on your graph the area that now represents the useable range of V S and IL
Cautions :
i1.Carefully observe the readings
2.All connections must be tight
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