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Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

DESCRIPTION QUICK REFERENCE DATA


Monolithic temperature and SYMBOL PARAMETER MIN. UNIT
overload protected power switch
based on MOSFET technology in a IL Nominal load current (ISO) 6 A
5 pin plastic surface mount
envelope, configured as a single
high side switch. SYMBOL PARAMETER MAX. UNIT

APPLICATIONS VBG Continuous off-state supply voltage 50 V


IL Continuous load current 15 A
General controller for driving Tj Continuous junction temperature 150 C
lamps, motors, solenoids, heaters. RON On-state resistance 60 m

FEATURES FUNCTIONAL BLOCK DIAGRAM


Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input BATT
Overtemperature protection -
self resets with hysteresis STATUS
Overload protection against
short circuit load with POWER
output current limiting; MOSFET
latched - reset by input INPUT
CONTROL &
High supply voltage load
protection PROTECTION
Supply undervoltage lock out
Status indication for overload CIRCUITS
protection activated
Diagnostic status indication
of open circuit load LOAD
Very low quiescent current
Voltage clamping for turn off of GROUND RG
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426 PIN CONFIGURATION SYMBOL


PIN DESCRIPTION
mb
1 Ground
B
2 Input I
TOPFET L
3 (connected to mb) S HSS
3 G
4 Status
5 Load 1 2 4 5
Fig. 2. Fig. 3.
mb Battery

July 1996 1 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Battery voltages
VBG Continuous off-state supply voltage - 0 50 V

Reverse battery voltages1 External resistors:


-VBG Repetitive peak supply voltage RI = RS 4.7 k, 0.1 - 32 V
-VBG Continuous reverse supply voltage RI = RS 4.7 k - 16 V

IL Continuous load current Tmb 115 C - 15 A


PD Total power dissipation Tmb 25 C - 83.3 W
Tstg Storage temperature - -55 175 C
Tj Continuous junction temperature2 - - 150 C

Tsold Lead temperature during soldering - 250 C

Input and status


II Continuous input current - -5 5 mA
IS Continuous status current - -5 5 mA

II Repetitive peak input current 0.1 -20 20 mA


IS Repetitive peak status current 0.1 -20 20 mA

Inductive load clamping

EBL Non-repetitive clamping energy Tmb = 150 C prior to turn-off - 1.2 J

ESD LIMITING VALUE


SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VC Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 k

THERMAL CHARACTERISTIC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
3
Thermal resistance
Rth j-mb Junction to mounting base - - 1.2 1.5 K/W

1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.

July 1996 2 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG = 1 mA 50 55 65 V
VBL Battery to load IL = IG = 1 mA 50 55 65 V
-VLG Negative load to ground IL = 1 mA 12 17 21 V

Supply voltage battery to ground


VBG Operating range1 - 5 - 40 V

Currents VBG = 13 V
2
IL Nominal load current VBL = 0.5 V; Tmb = 85 C 6 - - A
IB Quiescent current3 VIG = 0 V; VLG = 0 V - 0.1 2 A
IG Operating current4 VIG = 5 V; IL = 0 A 1.5 2.2 4 mA
IL Off-state load current5 VBL = 13 V; VIG = 0 V - 0.1 1 A

Resistances
RON On-state resistance6 VBG = 13 V; IL = 7.5 A; tp = 300 s - 45 60 m
RON On-state resistance VBG = 5 V; IL = 1.5 A; tp = 300 s - 70 90 m
RG Internal ground resistance IG = 10 mA - 150 -

INPUT CHARACTERISTICS
Tmb = 25 C; VBG = 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
II Input current VIG = 5 V 35 60 100 A
VIG Input clamping voltage II = 200 A 6 7.5 8.5 V
VIG(ON) Input turn-on threshold voltage - 2.1 2.7 V
VIG(OFF) Input turn-off threshold voltage 1.5 2 - V

1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

July 1996 3 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

PROTECTION FUNCTIONS AND STATUS INDICATIONS


Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS TRUTH TABLE THRESHOLD
SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT
Normal on-state 1 1 1

Normal off-state 0 1 0

IL(OC) Open circuit load1 1 0 1 100 350 600 mA

Open circuit load 0 1 0

Tj(TO) Over temperature2 1 0 0 150 175 - C

Over temperature3 0 0 0

VBL(TO) Short circuit load4 1 0 0 9 10.5 12 V

Short circuit load 0 1 0

VBG(TO) Low supply voltage5 X 1 0 3 4 5 V

VBG(LP) High supply voltage6 X 1 0 40 45 50 V


For input 0 equals low, 1 equals high, X equals dont care.
For status 0 equals low, 1 equals open or high.
For output switch 0 equals off, 1 equals on.

STATUS CHARACTERISTICS
Tmb = 25 C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VSG Status clamping voltage IS = 100 A; VIG = 0 V 6 7 8 V
VSG Status low voltage IS = 50 A; VBG = 13 V; VIG = 5 V - 0.7 0.8 V
IS Status leakage current VSG = 5 V - 0.1 1 A
IS Status saturation current7 VSS = 5 V; RS = 0 ; VBG = 13 V - 5 - mA

Application information
RS External pull-up resistor8 VSS = 5 V - 100 - k

1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.

July 1996 4 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

DYNAMIC CHARACTERISTICS
Tmb = 25 C; VBG = 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Inductive load turn-off
-VLG Negative load voltage1 VIG = 0 V; IL = 7.5 A; tp = 300 s 15 20 25 V

Short circuit load protection2 VIG = 5 V; RL 10 m


td sc Response time - 90 - s
IL Load current prior to turn-off t < td sc - 42 - A

Overload protection3
IL(lim) Load current limiting VBL = 9 V; tp = 300 s 28 40 52 A

SWITCHING CHARACTERISTICS
Tmb = 25 C, VBG = 13 V, for resistive load RL = 13 .
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to VIG = 5 V
td on Delay time to 10% VL - 16 - s
dV/dton Rate of rise of load voltage - 1 2.5 V/s

t on Total switching time to 90% VL - 40 - s

During turn-off to VIG = 0 V


td off Delay time to 90% VL - 30 - s
dV/dtoff Rate of fall of load voltage - 1.2 2.5 V/s
t off Total switching time to 10% VL - 50 - s

CAPACITANCES
Tmb = 25 C; f = 1 MHz; VIG = 0 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cig Input capacitance VBG = 13 V - 15 20 pF
Cbl Output capacitance VBL = VBG = 13 V - 415 580 pF
Csg Status capacitance VSG = 5 V - 11 15 pF

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in
current limiting until the overtemperature protection operates.

July 1996 5 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

IL / A BUK205-50Y
40
VBG / V = 13
VBL

IB 30 7
II B
I IL 6
VBG TOPFET
IS L
HSS
S 20
G VLG
VSG 5
VIG
RS IG

LOAD
10

0
0 0.5 1 1.5 2
VBL / V

Fig.4. High side switch measurements schematic. Fig.7. Typical on-state characteristics, Tj = 25 C.
(current and voltage conventions) IL = f(VBL); parameter VBG; tp = 250 s

PD% Normalised Power Derating RON / mOhm BUK205-50Y


120 100
110 90
100
80
90
70
80
70 60
60 50
50 40
40
30
30
20 20
10 10
0 0
0 20 40 60 80 100 120 140 1 10 100
Tmb / C VBG / V

Fig.5. Normalised limiting power dissipation. Fig.8. Typical on-state resistance, Tj = 25 C.


PD% = 100PD/PD(25 C) = f(Tmb) RON = f(VBG); conditions: IL = 7.5 A; tp = 300 s

IL / A BUK205-50Y RON / mOhm BUK205-50Y


20 150

15 VBG = 5V
100
13 V
10

50 typ.

0
0 -60 -20 20 60 100 140 180
0 50 100 150
Tmb / C Tmb / C
Fig.6. Limiting continuous on-state load current. Fig.9. Typical on-state resistance, tp = 300 s.
IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V RON = f(Tj); parameter VBG; condition IL = 1.5 A

July 1996 6 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

IG / mA BUK205-50Y IL BUK205-50Y
5 100 uA

CLAMPING
4 10 uA

3 1 uA
OPERATING VIG = 3 V

2 100 nA
HIGH VOLTAGE
1 10 nA

QUIESCENT VIG = 0 V
0 1 nA
0 10 20 30 40 50 60 -60 -20 20 60 100 140 180
VBG / V Tj / C
Fig.10. Typical supply characteristics, 25 C. Fig.13. Typical off-state leakage current.
IG = f(VBG); parameter VIG IL = f(Tj); conditions: VBL = 13 V = VBG; VIG = 0 V.

IG / mA BUK205-50Y II / uA BUK205-50Y
3 200

150 VBG / V = 5
VBG / V =
2
7
13
100

13
1
50 50

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8
Tj / C VIG / V
Fig.11. Typical operating supply current. Fig.14. Typical input characteristics, Tj = 25 C.
IG = f(Tj); parameter VBG; condition VIG = 5 V II = f(VIG); parameter VBG

IB BUK205-50Y II / uA BUK205-50Y
100 uA 100

80
10 uA

60
1 uA
40

100 nA
20

10 nA 0
-60 -20 20 60 100 140 180 0 10 20 30 40 50
Tj / C VBG / V
Fig.12. Typical supply quiescent current. Fig.15. Typical input current, Tj = 25 C.
IB = f(Tj); condition VBG = 13 V, VIG = 0 V, VLG = 0 V II = f(VBG); condition VIG = 5 V

July 1996 7 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

VIG / V BUK205-50Y IS BUK205-50Y


3.0 10 uA

2.5
1 uA

VIG(ON)
2.0

100 nA
VIG(OFF)
1.5

1.0 10 nA
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj / C Tj / C
Fig.16. Typical input threshold voltages. Fig.19. Typical status leakage current.
VIG = f(Tj); conditions VBG = 13 V, IL = 80 mA IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V

VIG / V BUK205-50Y IS / uA BUK205-50Y


8.0 500

400

7.5
300

200
7.0

100

6.5 0
-60 -20 20 60 100 140 180 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Tj / C VSG / V
Fig.17. Typical input clamping voltage. Fig.20. Typical status low characteristic, Tj = 25 C.
VIG = f(Tj); conditions II = 200 A, VBG = 13 V IS = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A

IS / mA BUK205-50Y VSG / V BUK205-50Y


20 1

0.8
15

0.6
10
0.4

5
0.2

0 0
0 2 4 6 8 10 -60 -20 20 60 100 140 180
VSG / V Tj / C
Fig.18. Typical status characteristic, Tj = 25 C. Fig.21. Typical status low voltage, VSG = f(Tj).
IS = f(VSG); conditions VIG = VBG = 0 V conditions IS = 50 A, VIG = 5 V, VBG = 13 V, IL = 0 A

July 1996 8 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

VSG / V BUK205-50Y VBG(LP) / V BUK205-50Y


8.0 47

VIG / V = 46 off
7.5 5

45
0
7.0
on
44

6.5 43
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj / C Tj / C
Fig.22. Typical status clamping voltage, VSG = f(Tj). Fig.25. Supply typical overvoltage thresholds.
parameter VIG; conditions IS = 100 A, VBG = 13 V VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 80 mA

IL(OC) / mA BUK205-50Y VBG / V BUK205-50Y


800 65

700
max.
600
60 IG =
500
1 mA
400 typ.
10 uA
300
55
200
min.
100

0 50
-50 0 50 100 150 200 -60 -20 20 60 100 140 180
Tmb / C Tj / C
Fig.23. Low load current detection threshold. Fig.26. Typical battery to ground clamping voltage.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V VBG = f(Tj); parameter IG

VBG(TO) / V BUK205-50Y IL / A BUK205-50Y


5 30

25
4
on
20
3
off 15
2
10

1
5

0 0
-60 -20 20 60 100 140 180 -25 -20 -15 -10 -5 0
Tj / C VLG / V
Fig.24. Supply typical undervoltage thresholds. Fig.27. Typical negative load clamping characteristic.
VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 80 mA IL = f(VLG); conditions VIG = 0 V, tp = 300 s, 25 C

July 1996 9 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

VLG / V BUK205-50Y IL / A BUK205-50Y


-10 0

-12 IL =
-10
1 mA
-14

-16 -20
7.5 A
-18
tp = 300 us -30
-20

-22 -40
-60 -20 20 60 100 140 180 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0
Tj / C VLB / V
Fig.28. Typical negative load clamping voltage. Fig.31. Typical reverse diode characteristic.
VLG = f(Tj); parameter IL; condition VIG = 0 V. IL = f(VBL); conditions VIG = 0 V, Tj = 25 C

VBL / V BUK205-50Y Cbl BUK205-50Y


65 10 nF

IL =
tp = 300 us 4A

60
1 mA

100 uA 1 nF

55

50 100 pF
-60 -20 20 60 100 140 180 0 10 20 30 40 50
Tj / C VBL / V

Fig.29. Typical battery to load clamping voltage. Fig.32. Typical output capacitance. Tmb = 25 C
VBL = f(Tj); parameter IL; condition IG = 5 mA. Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V

IG / mA BUK205-50Y IL / A BUK205-50Y
0 60
VBL(TO) typ. current limiting
50

-50 40 tp = 50 us
i.e. before short
30 300 us circuit load trip

-100 20

10

-150 0
-20 -15 -10 -5 0 0 5 10 15 20 25
VBG / V VBL / V
Fig.30. Typical reverse battery characteristic. Fig.33. Typical overload characteristic, Tmb = 25 C.
IG = f(VBG); conditions IL = 0 A, Tj = 25 C IL = f(VBL); condition VBG = 13 V; parameter tp

July 1996 10 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

IL / A BUK205-50Y VBL(TO) / V BUK205-50Y


60 15
14
50
13
typ. 12
40
11
30 10
9
20
8
7
10
6
0 5
-50 0 50 100 150 200 -60 -20 20 60 100 140 180
Tmb / C Tmb / C
Fig.34. Typical overload current, VBL = 9 V. Fig.36. Typical short circuit load threshold voltage.
IL = f(Tmb); conditions VBG = 13 V; tp = 300 s VBL(TO) = f(Tmb); condition VBG = 13 V

VBL(TO) / V BUK205-50Y Zth j-mb / (K/W) BUK205-50Y


12 10

11 D=
1
0.5

10 0.2
0.1
0.1 0.05
PD tp tp
9 D=
0.02 T

t
0 T
8 0.01
0 10 20 30 40 100n 1u 10u 100u 1m 10m 100m 1 10
VBG / V t/s
Fig.35. Typical short circuit load threshold voltage. Fig.37. Transient thermal impedance.
VBL(TO) = f(VBG); condition Tmb = 25 C Zth j-mb = f(t); parameter D = tp/T

July 1996 11 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

MECHANICAL DATA

Dimensions in mm 10.3 MAX 4.5 MAX

1.4 MAX
Net Mass: 1.5 g

11 MAX

15.4

2.5
0.85 MAX 0.5
(x4)
3.4
1.7

1.7
3.4

Fig.38. SOT426
mounting base connected to centre pin (cropped short)

MOUNTING INSTRUCTIONS

Dimensions in mm
11.5

9.0

17.5

3.4
1.7 1.7

3.8

1.3 (x4)

Fig.39. SOT426
soldering pattern for surface mounting.

July 1996 12 Rev 1.000


Philips Semiconductors Product specification

TOPFET high side switch BUK205-50Y


SMD version of BUK201-50Y

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1996 13 Rev 1.000