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AOD409
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD409 uses advanced trench technology to VDS (V) = -60V

provide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V)
gate resistance. With the excellent thermal resistance RDS(ON) < 40m (VGS = -10V) @ -20A
of the DPAK package, this device is well suited for RDS(ON) < 55m (VGS = -4.5V)
high current load applications. Standard Product
AOD409 is Pb-free (meets ROHS & Sony 259
specifications). AOD409L is a Green Product
ordering option. AOD409 and AOD409L are
electrically identical.

TO-252
D-PAK
D

Top View
Drain Connected to
Tab

G
S

G D S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS 20 V
Continuous Drain TC=25C -26
Current G TC=100C ID -18 A
C
Pulsed Drain Current IDM -60
C
Avalanche Current IAR -26 A
C
Repetitive avalanche energy L=0.1mH EAR 134 mJ
TC=25C 60
PD W
Power Dissipation B TC=100C 30
TA=25C 2.5
PDSM W
Power Dissipation A TA=70C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 16.7 25 C/W
RJA
Maximum Junction-to-Ambient A Steady-State 40 50 C/W
Maximum Junction-to-Case C Steady-State RJC 1.9 2.5 C/W

Alpha & Omega Semiconductor, Ltd.

AOD409

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250A, VGS=0V -60 V
VDS=-48V, VGS=0V -0.003 -1
IDSS Zero Gate Voltage Drain Current A
TJ=55C -5
IGSS Gate-Body leakage current VDS=0V, VGS=20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1.2 -1.9 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -60 A
VGS=-10V, ID=-20A 32 40
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 53
VGS=-4.5V, ID=-20A 43 55 m
gFS Forward Transconductance VDS=-5V, ID=-20A 32 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.73 -1 V
IS Maximum Body-Diode Continuous Current -30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2977 3600 pF
Coss Output Capacitance VGS=0V, VDS=-30V, f=1MHz 241 pF
Crss Reverse Transfer Capacitance 153 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 2.4
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 44 54 nC
Qg(4.5V) Total Gate Charge (4.5V) 22.2 28 nC
VGS=-10V, VDS=-30V, ID=-20A
Qgs Gate Source Charge 9 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 12 ns
tr Turn-On Rise Time VGS=-10V, VDS=-30V, RL=1.5, 14.5 ns
tD(off) Turn-Off DelayTime RGEN=3 38 ns
tf Turn-Off Fall Time 15 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/s 40 50 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s 59 nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev 3: June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
-10V -4.5V -4V
VDS=-5V
25 25
-6V
-5V
20 20
-ID (A)

-ID(A)
15 15
-3.5V 125C
10 10
25C
5 5
VGS=-3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

50 2
VGS=-10V
1.8
Normalized On-Resistance

40 ID=-20A
VGS=-4.5V
RDS(ON) (m)

1.6
30
VGS=-4.5V
VGS=-10V
1.4 ID=-20A
20
1.2
10
1
0
0 5 10 15 20 25 0.8
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and
Temperature (C)
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature

80 1.0E+01
ID=-20A
125C 1.0E+00

1.0E-01
60 125C
RDS(ON) (m)

1.0E-02
-IS (A)

1.0E-03
25C 25C
40 1.0E-04

1.0E-05

1.0E-06
20 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10 -VSD (Volts)
-VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000
3600
VDS=-30V Ciss
8 ID=-20A 3200
A 2800

Capacitance (pF)
-VGS (Volts)

6 2400
2000
4 1600
1200
Coss Crss
2 800
400
0 0
0 5 10 15 20 25 30 35 40 45 50 0 5 10
15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
10s

100s 800 TJ(Max)=175C

RDS(ON) 1ms TA=25C
10.0
Power (W)

10ms
-ID (Amps)

limited 600

DC
400
1.0
TJ(Max)=175C, TA=25C
200

0.1 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZJC.RJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJC Normalized Transient

RJC=2.5C/W
Thermal Resistance

0.1
PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 70
L ID
-ID(A), Peak Avalanche Current

tA = 60
BV V DD

Power Dissipation (W)

25
50

40
20
30

20
15
TA=25C
10

10 0
0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

30 60

50 TA=25C
25
Current rating -ID(A)

20 40
Power (W)

15 30

10 20

5 10

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient

RJA=50C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.