MICROWAVE CORPORATION

v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Typical Applications Features

8 This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
Gain: 23 dB
Saturated Power: +29.5 dBm
Cellular / PCS / 3G 42% PAE
Portable & Infrastructure
AMPLIFIERS - SMT

Supply Voltage: +2.75V to +5.0 V

Wireless Local Loop Power Down Capability
Functional Diagram Low External Part Count

General Description
The HMC413QS16G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
1.6 and 2.2 GHz. The amplifier is packaged in a
low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external compo-
nents, the amplifier provides 23 dB of gain, +29.5
dBm of saturated power at 42% PAE from a +5.0V
supply voltage. The amplifier can also operate
with a 3.6V supply. Vpd can be used for full power
down or RF output power/current control.
Electrical Specifications, TA = +25 C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V Vs= 5.0V
Parameter Frequency Units
Min. Typ. Max. Min. Typ. Max.

1.6 - 1.7 GHz 18 21 19 22 dB

1.7 - 2.0 GHz 19 22 20 23 dB
Gain
2.0 - 2.1 GHz 18 21 19 22 dB
2.1 - 2.2 GHz 17 20 18 21 dB

Gain Variation Over Temperature 1.6 - 2.2 GHz 0.025 0.035 0.025 0.035 dB/C

Input Return Loss 1.6 - 2.2 GHz 10 10 dB

Output Return Loss 1.6 - 2.2 GHz 8 9 dB

1.6 - 1.7 GHz 20 23 23 26 dBm

Output Power for 1 dB Compression (P1dB)
1.7 - 2.2 GHz 21 24 24 27 dBm

1.6 - 1.7 GHz 25.5 28.5 dBm

Saturated Output Power (Psat)
1.7 - 2.2 GHz 26.5 29.5 dBm

1.6 - 1.7 GHz 32 35 36 39 dBm

Output Third Order Intercept (IP3) 1.7 - 2.0 GHz 33 36 37 40 dBm
2.0 - 2.2 GHz 32 35 36 39 dBm

Noise Figure 1.6 - 2.2 GHz 5.5 5.5 dB

Supply Current (Icq) Vpd= 0V/3.6V 0.002/220 0.002/270 mA

Control Current (Ipd) Vpd= 3.6V 7 7 mA

Switching Speed tON, tOFF 80 80 ns

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
8 - 166
Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Gain vs. Temperature, Vs= 3.6V

30
28
Gain vs. Temperature, Vs= 5.0V
30
28
8
26 26
24 24
22 22
20 20

AMPLIFIERS - SMT
GAIN (dB)

GAIN (dB)
18 18
16 16
14 14
12 12
10 10
8 +25 C 8 +25 C
6 +85 C 6 +85 C
4 -40 C 4 -40 C
2 2
0 0
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Return Loss, Vs= 3.6V Return Loss, Vs= 5.0V

0 0
-2 -2
-4 -4
RETURN LOSS (dB)

RETURN LOSS (dB)

-6 -6
-8 -8
-10 -10
-12 -12
-14 -14
-16 S11 -16 S11
S22 S22
-18 -18
-20 -20
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

P1dB vs. Temperature, Vs= 3.6V P1dB vs. Temperature, Vs= 5.0V
32 32
30 30
28 28
26 26
24 24
22 22
P1dB (dBm)

P1dB (dBm)

20 20
18 18
16 16
14 14
12 12
10 10
8 +25 C 8 +25 C
6 +85 C 6 +85 C
4 -40 C 4 -40 C
2 2
0 0
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 8 - 167
Order Online at www.hittite.com
 MICROWAVE CORPORATION
v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

8 Psat vs. Temperature, Vs= 3.6V

32
Psat vs. Temperature, Vs= 5.0V
32
30 30
28 28
26 26
24 24
22 22
AMPLIFIERS - SMT

20 20
Psat (dBm)

Psat (dBm)
18 18
16 16
14 14
12 12
10 10
8 +25 C 8 +25 C
6 +85 C 6 +85 C
4 -40 C 4 -40 C
2 2
0 0
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Power Compression@ 1.9 GHz, Vs= 3.6V Power Compression@ 1.9 GHz, Vs= 5.0V
46 46
42 42
Pout (dBm) Pout (dBm)
Pout (dBm), GAIN (dB), PAE (%)

Pout (dBm), GAIN (dB), PAE (%)

38 Gain (dB) 38 Gain (dB)

34 PAE (%) 34 PAE (%)

30 30
26 26
22 22
18 18
14 14
10 10
6 6
2 2
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
INPUT POWER (dBm) INPUT POWER (dBm)

Output IP3 vs. Temperature, Vs= 3.6V Output IP3 vs. Temperature, Vs= 5.0V
44 44
42 42
40 40
38 38
36 36
34 34
32 32
OIP3 (dBm)
OIP3 (dBm)

30 30
28 28
26 26
24 24
22 22
20 20
+25 C +25 C
18 18
16 +85 C 16 +85 C
14 -40 C 14 -40 C
12 12
10 10
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
8 - 168
Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Reverse Isolation
vs. Temperature, Vs= 3.6V
0
Power Down Isolation, Vs= 3.6V
0
8
-10 +25 C -10
+85 C
-40 C
-20
ISOLATION (dB)

ISOLATION (dB)

AMPLIFIERS - SMT
-20
-30
-30
-40
-40
-50

-60 -50

-70 -60
1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Noise Figure vs. Temperature, Vs= 3.6V Noise Figure vs. Temperature, Vs= 5.0V
10 10
9 9
8 8
NOISE FIGURE (dB)

NOISE FIGURE (dB)

7 7
6 6
5 5
4 4
3 3
+25 C +25 C
2 +85 C 2 +85 C
-40 C -40 C
1 1
0 0
1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Gain & Power vs. Gain, Power & Quiescent Supply

Supply Voltage @ 1.9 GHz Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
30 34 28 330
GAIN (dB), P1dB (dBm), Psat (dBm)

27 310
29 32
Gain 26 290
28 30 25 270
24 250
27 28
P1dB, Psat (dBm)

23 230
GAIN (dB)

26 26 22 210
Icq (mA)

21 190
25 24
20 170
24 22 19 150
18 Gain 130
23 20
17 P1dB 110
Psat
22 18 16 90
P1dB
15 70
21 Psat 16 Icq
14 50
20 14 13 30
2.75 3.25 3.75 4.25 4.75 5.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5
Vcc SUPPLY VOLTAGE (Vdc) Vpd (Vdc)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 8 - 169
Order Online at www.hittite.com
 MICROWAVE CORPORATION
v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Absolute Maximum Ratings

8 Collector Bias Voltage (Vcc) +5.5 Vdc

Control Voltage (Vpd1, Vpd2) +4.0 Vdc

RF Input Power (RFin)(Vs = +5.0 Vdc,

AMPLIFIERS - SMT

+20 dBm
Vpd = +3.6 Vdc)

Junction Temperature 150 C

Continuous Pdiss (T = 85 C)
1.56 W
(derate 24 mW/C above 85 C)

Thermal Resistance
42 C/W
(junction to ground paddle)

Storage Temperature -65 to +150 C

Operating Temperature -40 to +85 C

Outline Drawing

NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
8 - 170
Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Pin Descriptions
Pin Number Function Description Interface Schematic
8
Ground: Backside of package has exposed metal ground slug that must
1, 2, 4, 5, 7, 8,
GND be connected to ground thru a short path. Vias under the device are

AMPLIFIERS - SMT
9, 10, 13, 15
required.

Power Control Pin. For maximum power, this pin should be connected
to 3.6V. For 5V operation, a dropping resistor is required. A higher
3, 14 Vpd1, Vpd2
voltage is not recommended. For lower idle current, this voltage can be
reduced.

6 RF IN This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz.

11, 12 RF OUT RF output and bias for the output stage.

Power supply voltage for the first amplifier stage. An external bypass
16 Vcc
capacitor of 330 pF is required as shown in the application schematic.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 8 - 171
Order Online at www.hittite.com
 MICROWAVE CORPORATION
v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Evaluation PCB
8
AMPLIFIERS - SMT

* For 5V operation on Vctl line,

select R1, R2 such that 3.6V is
presented on Pins 3 and 14.

List of Material
The circuit board used in the final application should use
Item Description
RF circuit design techniques. Signal lines should have
J1 - J2 PC Mount SMA RF Connector 50 ohm impedance while the package ground leads
J3 2 mm DC Header and exposed paddle should be connected directly to the
ground plane similar to that shown. A sufficient number
C1 2.2 pF Capacitor, 0603 Pkg.
of VIA holes should be used to connect the top and
C2 10 pF Capacitor, 0402 Pkg. bottom ground planes. The evaluation board should be
C3 - C4 330 pF Capacitor, 0603 Pkg.
mounted to an appropriate heat sink. The evaluation cir-
cuit board shown is available from Hittite upon request.
C5 2.2 F Capacitor, Tantalum

L1 16 nH Inductor 0603 Pkg.

U1 HMC413QS16G Amplifier

PCB* 105018 Eval Board

* Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
8 - 172
Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.1203 HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Application Circuit
8

AMPLIFIERS - SMT
TL1 TL2 TL3

Impedance 50 Ohm 50 Ohm 50 Ohm

Length 0.1 0.15 0.1

* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 8 - 173
Order Online at www.hittite.com
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.