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Power Transistors

2SC3063
Silicon NPN triple diffusion planar type
Unit: mm
For TV video output amplification 8.0+0.5
0.1 3.20.2

3.160.1

Features

11.00.5
3.80.3
High collector to emitter voltage VCEO

3.050.1
Small collector output capacitance Cob
TO-126B package which requires no insulation plate for installa-

1.90.1
tion to the heat sink

16.01.0
Absolute Maximum Ratings TC = 25C
Parameter Symbol Rating Unit
0.750.1
0.50.1
Collector to base voltage VCBO 300 V 0.50.1 1.760.1
4.60.2
2.30.2
Collector to emitter voltage VCEO 300 V 1 : Emitter
Emitter to base voltage VEBO 7 V 1 2 3
2 : Collector
3 : Base
Peak collector current ICP 200 mA TO-126B-A1 Package
Collector current IC 100 mA
Collector power dissipation PC 1.2 W
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C

Electrical Characteristics TC = 25C


Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage VCBO IC = 10 A, IE = 0 300 V
Collector to emitter voltage VCEO IC = 0.1 mA, IB = 0 300 V
Emitter to base voltage VEBO IE = 10 A, IC = 0 7 V
Forward current transfer ratio hFE VCE = 50 V, IC = 5 mA 50 250
Base to emitter voltage VBE VCE = 10 V, IC = 30 mA 1.2 V
Collector to emitter saturation voltage VCE(sat) IC = 30 mA, IB = 3 mA 1.5 V
Transition frequency fT VCB = 30 V, IE = 20 mA, f = 200 MHz 70 140 MHz
Collector output capacitance Cob VCB = 30 V, IE = 0, f = 1 MHz 2.4 pF

193
2SC3063 Power Transistors

PC T a IC VCE IC VBE
1.6 120 240
Without heat sink TC=25C IB=2.0mA VCE=10V
Collector power dissipation PC (W)

1.6mA
25C
100 1.2mA 200
TC=100C 25C

Collector current IC (mA)

Collector current IC (mA)


1.2 1.0mA
80 0.8mA 160

0.6mA
0.8 60 120

0.4mA
40 80

0.4 0.2mA
20 40

0 0 0
0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) IC hFE IC fT I E
240
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCB=30V
3 VCE=50V
1000 220 f=200MHz
TC=25C
Forward current transfer ratio hFE

Transition frequency fT (MHz)


200
1 25C
300 180
TC=100C
160
100
0.3 25C 140

120
30
TC=100C 100
0.1
25C 80
10
25C 60
0.03 40
3
20

0.01 1 0
1 3 10 30 100 1 3 10 30 100 300 1 3 10 30 100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob VCB Area of safe operation (ASO)


10 1000
Single pulse
IE=0
Collector output capacitance Cob (pF)

TC=25C
f=1MHz
TC=25C 300 ICP
8
t=2ms
Collector current IC (A)

100
IC
t=1s
6 30

10

4
3

1
2

0.3

0 0.1
1 3 10 30 100 300 1000 1 3 10 30 100 300 1000
Collector to base voltage VCB (V) Collector to emitter voltage VCE (V)

194
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