Solution to Elementary Electronics; midterm#1

Part I:

1. (a) diode ; Zener diode

(b)

2. (a) (b) VBE 0 and VCB 0

3. (a) Large signal model for npn small signal model with Early effect .
(b) The Early effect is the variation of the base width in a bipolar transistor which in turn causes a variation in
IC; it is named after its discoverer James M. Early.

4. (a) a CR low-pass filter

(b) a CR high-pass filter

5. ni 5.2 1015 T 3/2 exp Eg / 2kT 1.08 1010 electrons / cm3 for T 300 K

N AND 3 2 1016 9 1015

Vo VT ln 26 10 ln 0.73 V
1.08 1010
2
ni 2
 Si q N A N D
1
VR = 0 C j 0 2.65 108 F / cm 2 0.265 fF / m 2
2 N A N D Vo

C j0
VR = 2 V C j 0.137 fF / m 2
V
1 R
Vo

C j ,tot (VR 0) 0.265 2000 530 fF

1 1
f res 850 MHz L 41.2 nH
2 LC

C j ,tot (VR 2V ) 0.137 2000 274 fF

1 1
f res (VR 2V ) 1.5 109 Hz 1.5 GHz .
2 LC

6. (a) (b)

7. (a) or
(b) We need to add a parallel capacitor to the resistor and form a RC loop that smoothes out the ripples.

V V dI 1 V V I
8. (a) I C I S exp BE 1 1 CE and g m C I S exp BE 1 1 CE C .
VT VA dVBE VBE VT VA VT
 dVBE dI B 1 dI C 1 d VBE V 1 IC
(b) r ; I S exp 1 1 CE r .
dI B dVBE dVBE dVBE VT VA VT gm

dI C d VBE V 1 V I dV V
(c) I S exp 1 1 CE I S exp BE 1 C ro CE A .
dVCE dVCE VT VA VA VT VA dI C IC

9.

(a) or

(b) Given VBE 730 mA ; I C I S exp(VBE / VT ) 8 1016 exp(730 / 26) 1.25 mA

IC 1
IB 1.25 A ; I E I 1.26 mA
C
KVL : VCC VCE I E R 0 VCE VBE 730 mV
I C 1.25 mA 1
gm
VT 26 mV 20.8

r 100 20.8 2.08 k
gm
VA
ro
I C 1.25
 Midterm#1; Elementary Electronics (2015/04/13; 115%)

1. (a) Draw the circuit symbol of the regular diode and the Zener diode. (b) Draw the current-voltage (I/V)
characteristics of ideal, constant-voltage and exponential models of diodes. (10%)
2. (a) Draw the circuit symbol of for the npn and the pnp transistors (label the terminals).
(b) Write down the conditions for npn transistors to operate in the forward active mode. (10%)
3. (a) Draw the large-signals and small-signal models of transistors including the Early effect. (b) What is
Early Effect? (10%)
4. For extra credit: draw the circuit configuration of (a) a CR low-pass filter and (b) a CR high-pass filter.
(10%)

5. A cell phone contains a 850 MHz oscillator; its frequency is defined by the resonance frequency of an LC
1 1
tank, f res . If the capacitance is provided by a reversely-biased pn junction, calculate the
2 LC
change in the oscillator frequency when the reverse voltage goes from 0 ( f res 850 MHz ) to 2 V. The pn

diode is doped with N A 2 1016 cm 3 , N D 9 1015 cm 3 and the cross-sectional area is 2000 m2.

(25%)

6. Using a constant-voltage diode model with VD,on = 0.8V and

VB = 2V, (a) plot the input/output characteristic of the circuit to the

right; (b) if the input to this circuit is given by Vin V p sin t , plot

the output waveform; where V p VB VD ,on . (10%)

7. The heart of a bridge type full-wave rectifier is depicted in the

figure to the right. (a) If the input to this circuit is given by

Vin V p sin t , plot the output waveform. (b) To form an AC

adaptor using this rectifier, what is the other circuit element

needed to be added? Where should you connect it to this bridge
rectifier (make a drawing)? Draw the output waveform after this
additional element is attached. (15%)

8. For a npn transistor operates in the forward active mode, prove that (a) the transconductance g m I C / VT ;
for small-signal model (b) r / g m and (c) ro VA / I C . (10%)

9. (a) Draw the small-signal model of the circuit to the right. (b) If

I S 8 1016 A , 100 , VBE 730 mV and VA , determine the

operation point of this transistor and the parameters for the small-signal
model. (15%)