Answers to the Problems

P r o b l e m s in C h a p t e r 2

1. Aw = e 2w = - 0 . 2 1 4 btm; Ah = e3h = - 0 . 0 4 2 8 lam.

2. AL = elL = 2.95 btm; Aw - e' 2 w - - 0 . 0 3 9 }am; Ah = e' 3 h = - 0 . 0 4 2 8 }am.
3. I x, = l x + bhr 2.
4. Zo=1.38btm.
..,
~;. 1- = 71; 4 71: 4
-a = ~d
4 64
1 1 blhlb2h2
6. Ix, = ~ bl hi 3 + ~ b2 h23 + (h I + h2) 2 .
4(b I h I + b 2 h 2 )
7. Wmax=0.621.tm.
8. Lmax - 2 . 5 1 m m .

9. w(L / 2) = 5pgL------~4
32Eh 2 "
10. w ( a l ) = 0 . 8 1 g m , T ( 0 ) = l . 6 4 x 1 0 v Pa.
11. amax=182g.

12. 1
w2(a+2A)= 1 [ 6mo(a+ 2, A)2_pABHg(a + 21 A ) 3 +2PABHg
EBH3 , (2 )4 -12Dl(a+2A)-12D2
1 1
where m o =
1 2 ( I 2 2a + 11A) '
o. = - m"oalan d

D 2 = 71 -1 m~ "

13. w ( x ) = c
2
1
I
-mxZ-2M"Lx+6M'L
i
2 x 2 wherec-
' Ebh3L
,m=pbhL, M"=M+m

and M ' = M + - m .
2
14.)q=l 1 kHz.
15.)q=70.24 kHz.
16. (1) N o r m a l vibration, fN=1569Hz; (2) Lateral vibration, or f L = 2 " 5 f u = 3.925 kHz; (3)
A n g u l a r vibrationf~ =210 Hz.
17. (1) Wmax,sq=O.OO2btm, Wmax,7=0.00248gm.
(2) Tm~,Sq=6850 Pa, Tma~,r=10540 Pa; ( 3 ) J } q = 1 3 . 8 5 k H z , f r = 1 2 . 5 k H z .
18.J]=4.72kHz.
19. Eq. (2.3.22).
306 Analysis and Design Principles of MEMS Devices

20. Eq. (2.4.3).

21. Eq. (2.2.36).
22. Eq. (2.2.44).
23. T = 2.897 x 105 Pa.
24. Tb = -1.4 x 107 Pa.
25. Buckling strain: ~b =8.22x10 -5", Thermal strain- ~T = 3-15x10-3 . The beam buckles,
because ~T is larger than ~b.
26. (1)fa=1538Hz; (2) A(0)=0.092~m and A(cores)=0.235~tm.
28. Q=1432.
29. Q=6, ~=0.0836.
30. Stress at edge T = 5 108 (Pa), rupture pressure PR = 6 atm.
31. Eq. (2.6.16)
32. The stress components at edge center:Txx(1,0)=2.55 T~(1,0)=vTx~(1,0)
---7.65x107pa, and Txy(1,0) = 0Pa. The stress components at the point 0.1mm away from
the edge center: T~(0.9,0)-1.81 108 Pa, T~(0.9,0)=0.501 108 Pa and T~(0.9,0)=0 Pa.
33. foo = 72.3 kHz.
34. Frequency in air fair -83.1 kHz, frequency in water f~te,~ = 21.4 kHz.

P r o b l e m s in C h a p t e r 3

1. ~t = 8.36 10 - 6 Pa.sec.
2. Qwater = 0.0986 ~t//sec and Qair = 5.55 ~t//sec.
~9d ~9d
3. Air R e - - 6.3, water R e - - 1.54.

4. v = 1.2 cm/sec.
5. (1)c=0.0489kg/s; (2)~=0.314 and Q=1.68; (3)fres-l.989kHz.
6 (1) ~ = 0 . 4 9 3 h2d3
~tbZL2
~ - - ~ , (2) ~=0.0112 and Q=44.6.

7. (1) ~ = 3.94 ~tL2

, 4bh9 2~ ; (2) Q=698.

8. d----19.4~tm.
9. (1) h=4.48~tm; (2) d = 19.9~tm.
10. c2:c~=2.78:1.
11. c2:c1=1.014:1.
12. ~=0.81.
13. ~= 0.429
 Answers to the problems 307

14. Q=703.
15. Q=2012.

Problems in Chapter 4

1. (1) F ( y ) = - ~ Aee~ V2 9(2) F(y)---7.083 10-SN .

2d 2
nHe e o V 2 y o~2
2
2. (1) F ( y l ) = d Yl ; (2) 4.722 10-gN.

OF Aee~ >0.
3 . ( 1 ) dbalanc e = V "l 8Hfgg
eeo ; (2) 40.2~tm; (3) The balance is not stable, as
Od 4d 3
4. The balance displacement is 1.77~m.
Ay nHee~V2 9 (2) Ay=l l~tm.
5. (1) The equation for displacement Ay is (1 + Ay) 2
Yo Yo kdoYo
6 (1) Ymax = d/3=l.3331am; (2) Vpo:12.1 V.
7. Vpo :32.6V.
8. (1)ymax=l.421~tm; (2) Vpo=13.3V; (3) Vn=2.06V.
9. (1)Ymax=l.472~tm; (2) Vpo=9.9 V; (3) VH=6.82V.
10. (1)Ymax=l.211am; (2) Vpo=7.33 V; (3) Vn=Z.96V.
11. (1) qgmax=0.158~ (2) q)=0.0645 ~
12. Vc=2.83 V.
13. Vc=3.23 V.
14.fo'=1526 Hz.
15.fo'=l 516 Hz.
16.fo'=1314 Hz.
2Aee o
17. 6 0 ' = 0 3 o I 1 - ~ 2 V2 ,where 030 = ~ k and C O -

18.fo'=l 1.24 kHz.

19.fo'=l 1.78 kHz.

Problems in Chapter 5

1. If the electrostatic effect of the bias voltage is neglected, the results are: (1)
Sopen=23.7mV/Pa; (2) SF=14mV/Pa. If the electrostatic effect of the bias voltage is
considered, the results are: (1) Sopen=26.6mV/Pa; (2) SF=I 6mV/Pa.
2. (1) Vo=32.8mV/Pa; (2) Vout=21.5mV.
3. V~= 13.4mV-sin03t.
308 Analysis and Design Principles of MEMS Devices

! 1 Ageo V2
4. 03 . 03o.~11 +. 4 p o.( Otf5 1 2
ot ) where Po = ~
Y 2 ' 2kd 3
5. (1) A f = - l . 6 kHz; (2) A f = - l . 113 kHz.
6. Veff : ~/Vo 2 +V1 2 .

7. (1) ac=0.67g; (2) ac=0.45g.

8. At =0.424bts.
9. (1) ac =207g; (2) a c - 1 0 3 . 5 g ; and (3) At =5.1ps.

Problems in C h a p t e r 6

_ 1 1 O11Pa E'12 0.214 - 0.175 sin 22or

1. (1)Ex, x, - 2' _ and Vy,~ . . . .
11 0 . 7 6 4 - 0.175sin 22or g'll 0 . 7 6 4 - 0.175sin 22or
(2) For or=0, Ex, x, = 1.31 x 10 ll Pa, Vy.x, = 0.28 ; For or=n~4, Ex, x, = 1.7 x 1011Pa,
Vy,x, = 0.066.
1 1 1
2. (1) n l -- n 11 -- 2 7[ o sin 2 2or ; n t = 71;12 + --2no sin 2 2or', n s = - 2 n o sin 4or , where

n o = 7111 - 7112 - 7[44.

1 1 1
(2) For p-Si, we h a v e n , = 27[44 sin 2 2or, 7[, = - 2 7 [ 4 4 sin 2 2or, n s = -~n44 sin4ot.

1 2 2
3. (1) n t = r i l l - 2 n o ( 4 C O S 4 or+cos cxsin or); n t =rtl2 + 3 n o c o s 2 o t s i n 2 or;

1
7is = 27[0 cosotsinot(sin 2 O r - - - - C O S 2 (~) where 7[o = ( n i l - 7 1 1 2 -7[44 ) .
2
Oft l
(2) For p-Si, by = 0, we find ot - 35.26 ~ . That is the [110] direction.
0or
1 1
4. rt t = r t l l - ~ n o ; n t --7112 + 6 n o , 7is = 0 , where n o --- (7[11 - n 1 2 -7144).

~_---- a 2
.
ARR 21(1 _ v)n44Tx x cos2ot , where Txx = 1 . 2 3 ~ - p

..... a 2
6. AVvs WL2
n44 (1-V)Txx s i n 2 a , where Txx = 1 . 2 3 ~ - p .

7. NL=0.56%.
8. NL = - 0 . 1 9 % .
9. For 71;11, NL~ = 4.3%; For hi2, NLl2 - 0.48%.
10. R =5k .