Sie sind auf Seite 1von 7

CNY70

Reflective Optosensor with Transistor Output

Description
The CNY70 has a compact construction where the
emitting light source and the detector are arranged in the
same direction to sense the presence of an object by using
the reflective IR beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.

94 9320

Applications
D Opto-electronic scanning and switching devices i.e.,
index sensing, coded disk scanning etc. (opto-
electronic encoder assemblies for transmission
sensing).

Features
D Compact construction in center-to-center D High signal output
spacing of 0.1
D Low temperature coefficient
D No setting required D Detector provided with optical filter

Pin Connection

White Dot for Collector

E D

95 10930

Top view

TELEFUNKEN Semiconductors 1 (7)


Rev. A1, 11-Jun-96
CNY70
Absolute Maximum Ratings
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Reverse voltage VR 5 V
Forward current IF 50 mA
Forward surge current tp 10 ms IFSM 3 A
Power dissipation Tamb 25C PV 100 mW
Junction temperature Tj 100 C

Output (Detector)
Parameters Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation Tamb 25C Pv 100 mW
Junction temperature Tj 100 C

Coupler
Parameters Test Conditions Symbol Value Unit
Total power dissipation Tamb 25C Ptot 200 mW
Ambient temperature range Tamb 55 to +85 C
Storage temperature range Tstg 55 to +100 C
Soldering temperature 2 mm from case, t 5 s Tsd 260 C

2 (7) TELEFUNKEN Semiconductors


Rev. A1, 11-Jun-96
CNY70
Electrical Characteristics
Tamb = 25C
Input (Emitter)
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA VF 1.25 1.6 V
Breakdown voltage IR = 100 mA V(BR) 5 V

Output (Detector)
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter IC = 1 mA V(BR)CEO 32 V
breakdown voltage
Emitter collector IE = 100 mA V(BR)ECO 5 V
breakdown voltage
Collector dark current VCE = 20 V, If = 0, ICEO 200 nA
E=0

Coupler
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Collector current VCE = 5 V, IF = 20 mA, IC 1) 0.3 1.0 mA
d = 0.3 mm (figure 1)
Cross talk current VCE = 5 V, IF = 20 mA ICX 2) 600 nA
(figure 1)
Collector emitter IC = 0.1 mA, VCEsat 1) 0.3 V
saturation voltage IF = 20 mA, d = 0.3 mm
(figure 1)
1) Measured with the Kodak neutral test card, white side with 90% diffuse reflectance
3) Measured without reflecting medium

Reflecting medium
~~

(Kodak neutral test card)


d
~

~
~~

Emitter Detector

A C C E 95 10808

Figure 1. Test circuit

TELEFUNKEN Semiconductors 3 (7)


Rev. A1, 11-Jun-96
CNY70
Typical Characteristics (Tamb = 25C, unless otherwise specified)
300 10
P tot Total Power Dissipation ( mW )

Kodak Neutral Card


(White Side)

IC Collector Current ( mA )
1 d=0.3
Coupled Device VCE=5V
200

0.1
Phototransistor
100
IR-Diode 0.01

0 0.001
0 25 50 75 100 0.1 1 10 100
95 11071 Tamb Ambient Temperature ( C ) 95 11065 IF Forward Current ( mA )

Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 5. Collector Current vs. Forward Current

1000.0 10
Kodak Neutral Card
(White Side)
IC Collector Current ( mA )

d=0.3
I F Forward Current ( mA )

100.0
1

10.0

0.1
1.0

0.1 0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 VF Forward Voltage ( V ) 95 11066 VCE Collector Emitter Voltage ( V )

Figure 3. Forward Current vs. Forward Voltage Figure 6. Collector Current vs. Collector Emitter Voltage

1.5 100.0
CTR rel Relative Current Transfer Ratio

VCE=5V
CTR Current Transfer Ratio ( % )

1.4 Kodak neutral card


IF=20mA (white side)
1.3 d=0.3
1.2
10.0
1.1
1.0
0.9
1.0
0.8
VCE=5V
0.7 d=0.3
0.6
0.5 0.1
30 20 10 0 10 20 30 40 50 60 70 80 0.1 1.0 10.0 100.0
96 11913 Tamb Ambient Temperature ( C ) 96 11914 IF Forward Current ( mA )

Figure 4. Rel. Current Transfer Ratio vs. Ambient Temperature Figure 7. Current Transfer Ratio vs. Forward Current

4 (7) TELEFUNKEN Semiconductors


Rev. A1, 11-Jun-96
CNY70
Typical Characteristics (Tamb = 25C, unless otherwise specified)
0 10 20
10.0 30
IF=50mA
CTR Current Transfer Ratio ( % )

I c rel Relative Collector Current


I e rel Relative Radiant Intensity
40
1mA 1.0
20mA
1.0 10mA 0.9 50
5mA
2mA
0.8 60
Kodak neutral card
(white side)
70
d=0.3 0.7
80
0.1
0.1 1.0 10.0 100.0 0.6 0.4 0.2 0 0.2 0.4 0.6
96 12001 VCE Collector Emitter Voltage ( V ) 95 11063

Figure 8. Current Transfer Ratio vs. Collector Emitter Voltage Figure 10. Rel. Rad. Intensity/ Coll. Current vs. Displacement

10
I C Collector Current ( mA )

1
d

0.1

VCE=5V
IF=20mA

0.001
0 2 4 6 8 10
95 11069 d Distance ( mm )

Figure 9. Collector Current vs. Distance

1.0
0.9 0
I Crel Relative Collector Current

1.5 s
0.8
d = 5 mm E D 5mm
0.7 4 mm 10mm
0.6 3 mm d
2 mm
0.5 0
1 mm E s
0.4 0 5mm
0.3 D
10mm
VCE = 5 V
0.2
IF = 20 mA
0.1
0
0 1 2 3 4 5 6 7 8 9 10 11
96 11915 s Displacement ( mm )

Figure 11. Rel. Collector Current vs. Displacement

TELEFUNKEN Semiconductors 5 (7)


Rev. A1, 11-Jun-96
CNY70
Dimensions in mm

95 11345

6 (7) TELEFUNKEN Semiconductors


Rev. A1, 11-Jun-96
CNY70
Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).

The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany


Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

TELEFUNKEN Semiconductors 7 (7)


Rev. A1, 11-Jun-96