BSC019N04NS G

OptiMOS3 Power-Transistor
Product Summary
Features
V DS 40 V
Fast switching MOSFET for SMPS
R DS(on),max 1.9 m
Optimized technology for DC/DC converters
ID 100 A
1)
Qualified according to JEDEC for target applications

N-channel
PG-TDSON-8
Normal level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Superior thermal resistance

100% Avalanche tested

Pb-free plating; RoHS compliant

Type Package Marking

BSC019N04NS G PG-TDSON-8 019N04NS

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID V GS=10 V, T C=25 C 100 A

V GS=10 V, T C=100 C 100

V GS=10 V, T A=25 C,
29
R thJA=50 K/W 2)

Pulsed drain current3) I D,pulse T C=25 C 400

Avalanche current, single pulse 4) I AS T C=25 C 50

Avalanche energy, single pulse E AS I D=50 A, R GS=25 295 mJ

Gate source voltage V GS 20 V

1)
J-STD20 and JESD22

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 BSC019N04NS G

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Power dissipation P tot T C=25 C 125 W

T A=25 C,
2.5
R thJA=50 K/W 2)

Operating and storage temperature T j, T stg -55 ... 150 C

IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 1 K/W

Device on PCB R thJA 6 cm2 cooling area2) - - 50

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=85 A 2 - 4

V DS=40 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 A
T j=25 C

V DS=40 V, V GS=0 V,
- 10 100
T j=125 C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 1.6 1.9 m

Gate resistance RG - 1.3 -

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 60 120 - S
I D=50 A

2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information

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 BSC019N04NS G

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 6600 8800 pF

V GS=0 V, V DS=20 V,
Output capacitance C oss - 1800 2400
f =1 MHz
Reverse transfer capacitance Crss - 70 -

Turn-on delay time t d(on) - 22 - ns

Rise time tr V DD=20 V, V GS=10 V, - 5.6 -

Turn-off delay time t d(off) I D=30 A, R G=1.6 - 33 -

Fall time tf - 6.6 -

Gate Charge Characteristics 5)

Gate to source charge Q gs - 32 - nC

Gate charge at threshold Q g(th) - 20 -

Gate to drain charge Q gd V DD=20 V, I D=30 A, - 10 -

Q sw V GS=0 to 10 V
Switching charge - 22 -

Gate charge total Qg - 81 108

Gate plateau voltage V plateau - 4.9 - V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 77 - nC
V GS=0 to 10 V

Output charge Q oss V DD=20 V, V GS=0 V - 66 -

Reverse Diode

Diode continuous forward current IS - - 100 A

T C=25 C
Diode pulse current I S,pulse - - 400

V GS=0 V, I F=50 A,
Diode forward voltage V SD - 0.85 1.2 V
T j=25 C

V R=20 V, I F=I S,
Reverse recovery charge Q rr - 100 - nC
di F/dt =400 A/s

5)
See figure 16 for gate charge parameter definition

Rev. 1.1 page 3 2008-08-11

 BSC019N04NS G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS10 V

140 120

120
100

100
80

80
P tot [W]

I D [A]
60

60

40
40

20
20

0 0
0 40 80 120 160 0 40 80 120 160
T C [C] T C [C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 10
limited by on-state
resistance 1 s

10 s

102 100 s

1
DC
Z thJC [K/W]

1 ms 0.5
I D [A]

1
10
0.2
10 ms

0.1
0.1

100 0.05

0.02

0.01

10-1 0.01 0
single pulse
0 0 0 0 0 1

-1 0 1 2
10 10 10 10 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]

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 BSC019N04NS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C
parameter: V GS parameter: V GS

400 6
10 V
7V
5.5 V
6.5 V
5

300

R DS(on) [m]
5V
6V
I D [A]

200 3
6V

6.5 V
2 7V
5.5 V
10 V
100

1
5V

0 0
0 1 2 3 0 10 20 30 40 50
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C
parameter: T j

400 250

200
300

150
g fs [S]
I D [A]

200

100

150 C
100

25 C
50

0 0
2 3 4 5 6 7 8 0 40 80 120 160
V GS [V] I D [A]

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 BSC019N04NS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=85 A

3.5 4.5

3 4

2.5 3.5
R DS(on) [m]

2 98 %
3

V GS(th) [V]
typ
1.5 2.5

1 2

0.5 1.5

0 1
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [C] T j [C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 10000

1000

Ciss

Coss
150 C, 98%

25 C
103 1000

100

150 C
C [pF]

I F [A]

25 C, 98%

102 100

Crss 10

101 10

1
0 10 20 30 40 0.0 0.5 1.0 1.5 2.0
V DS [V] V SD [V]

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 BSC019N04NS G
13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=30 A pulsed

parameter: T j(start) parameter: V DD

100 12

20 V
10
25 C
8V
100 C
32 V

125 C
8

V GS [V]
I AV [A]

10 6

1 0
1 10 100 1000 0 20 40 60 80 100
t AV [s] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

45
V GS

Qg
40

35
V BR(DSS) [V]

30 V g s(th)

25
Q g(th) Q sw Q g ate

Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [C]

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 BSC019N04NS G

Package Outline PG-TDSON-8

PG-TDSON-8: Outline

Footprint
Dimensions in mm

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 BSC019N04NS G

Package Outline

PG-TDSON-8: Tape

Dimensions in mm

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 BSC019N04NS G

Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies
(www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 1.1 page 10 2008-08-11

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