Magazine on 3 D - I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

ISSUE n17 N O V E M B E R 2010

e d i t o r i a l
What is the impact
of Xilinxs 3D
silicon interposer
announcement?
Xilinx made a big announcement last
month when announcing their intention
to commercialize 3D silicon interposers
based on TSV interconnects for their next-
generation 28nm FPGAs in their Virtex 7
future product line.
Lets look at why this announcement is so
important: To begin with, Xilinx is the first
large semiconductor company to jump into
the free space of 3D integration in the logic
area. Its quite impressive that a fabless
company is taking the first big step in this
new direction for manufacturing. Indeed,
Xilinx is kind of cleaning the pipeline so that
other players can quickly follow in the FPGA
COMPANY vision
Interview with Dr. William Chen of ASE
Yole Dveloppement recently had an opportunity to interview William (Bill) Chen
about his long career in microelectronics packaging and his current activities as
a part of ASE.
Yole Dveloppement: Dr Chen before we start
our questions on ASE, can you share a little on
your past history. Its our understanding that
you had a full career at IBM before coming to
ASE and that you just finished two terms as
President of the IEEE Component, Packaging
and Manufacturing Technology Society (CPMT).
Can you fill us in on this part of your past?
Bill Chen: After I completed my PhD studies
at Cornell University, I started working at the
IBM Development Laboratory in Endicott New
York. It was still at an early point in the history of
electronics and certainly an exciting time at IBM.
I soon gravitated to work in electronic packaging.
new. I learned how to do engineering from concept
nucleation, feasibility demonstration, and product
development to manufacturing. I spent over 33 years
at IBM in various technical and R&D management
positions. After retirement, I joined the Institute of
Materials Research and Engineering (IMRE) in
Singapore. My initial role at IMRE was to establish a
research program in Electronic Packaging within this
young Research Institute. As it turned out I became
the Director of IMRE, nurturing the young Institute to
become the premier materials research institute in
the region. I retired from IMRE to join ASE in 2000.
I was President of IEEE CPMT Society from 2006 to
2009. I am currently co-chair of the ITRS Assembly

10
and Packaging ITWG. I have been
and high-performance ASIC spaces. The science was intriguing and technology was elected a Fellow of ASME and IEEE.
To be continued on page 2

Printed on recycled paper

a n a ly s i s
Next up for 3D ICs: Wide I/O
The wide I/O interface is already being embraced as the next step in the evolution of 3D IC integration.

M
any companies are publicly discussing their
3D IC integration roadmaps and the role
wide input/output (I/O) interfaces will play.
For starters, South Korean-based electronics giant
Samsung hails the wide I/O and through-silicon via
(TSV) combination as the best of both worlds in wide I/O interfaces
terms of achieving performance and thin multiple-
die stacks.
Memory maker Elpida, based in Tokyo, Japan, is
actively developing next-gen mobile wide I/O DRAM,
which expands the I/O interface bus width, and
mounting technologies that use TSVs. In fact, Elpida
has installed a production line at its Hiroshima Plant
to develop TSV and mass production technologies
for multiple connections using TSVs.
And Nokia, an Espoo, Finland-based leader in
the transformation and growth of the converging
Internet and communications industries, describes
the evolution of 3D IC integration as moving from
2.5 to true 3D, relying on various applications of
TSVs in silicon interposers, memories, and ICs.
Why I/O
interfaces?
When asked whats
fueling the drive to use
for 3D ICs, answers
vary slightly from
company to company
but a theme is clearly
emerging.
Wide I/O interface with TSV for Mobile processors
As handheld devices become increasingly more (Courtesy of Texas Instruments)
sophisticated, applications are emerging that
require much higher memory bandwidth, says
Jeff Brighton, director of CMOS 3DIC technology
development at Texas Instruments (TI; Dallas,
C O N TE N TS
Texas). However, fundamental power and thermal
limitations remain the same as in todays handsets.
The initial version of a wide I/O memory interface EVE N TS 2
will deliver 12.8GB/s of memory bandwidthwhile
keeping the processor plus memory system-on- A N AL Y SIS 2
chip (SoC) power consumption under control, he
adds. ... COMPA NY v i s i o nS 6

2
The company plans to integrate wide I/O interface
structures using TSVs for mobile phones in volume
by 2013. A N AL Y ST C OR N ER 2 2

platinum partners:

Free registration on
www.i-micronews.com
 NOVEMBER 2010 i s s u e n 1 7
E D I T O R I A L
But this achievement also clearly raises the
importance of supply chain collaboration.
This would never have been possible without
a close collaboration that began 4 years
ago between key partners such as imec for
initial R&D, TSMC as a CMOS and interposer
turnkey foundry, Amkor and Ibiden for the final
substrate, assembly, packaging & test.
This announcement also confirms the near-
term availability of a high-reliability via middle
copper-filled-type of TSV manufactured in the
CMOS wafer foundry environment. It is an
important sign that the infrastructure for such
vias will be ready soonafter many years
of R&D and overcoming numerous technical
issues (such as long via filling and plating
time, copper vias CTE mismatch with silicon,
growing of high aspect ratios isolation / seed
/ barrier layers in TSV, contamination issues,
etc.). Unsurprisingly, foundry giant TSMC
seems to be one of the key players the closest
to the production of these emerging types of
substrates!
Last, but certainly not least, Xilinxs
annoucement confirms that the 2.5D age
is here. Indeed, 3D interposers, based either
on glass or silicon substrates, are definitely
bridging the gap to the later step toward fully
redesigned and partitioned 3DICs. It will be
interesting to look at the details of Xilinxs
silicon interposer when coming to market in a
real product, as it will certainly serve as a first
reference design of its kind that could serve
another part of the IC industry for different
applications, leveraging a real platform
available from niche to high-volume markets.
Yole Dveloppement has always predicted
well in advance the next big trends that
will emerge in the 3D packaging space and,
hopefully, will continue to do so. In 2006, we
announced that TSV would become a reality
in MEMS that would move way beyond this
space. In 2007, we announced the imminent
production of TSV in CMOS image sensors.
In 2008, we announced that 2.5D interposers
would become a bridge platform before fully
redesigned 3DICs. In 2009, we announced
the imminent arrival of TSV interconnects in
the stacked DRAM memory area, and later on
in high-speed, low-power-consumption wide
I/O interface applications. But what exactly is
wide I/O? I invite you to discover the next
big thing ahead for 3DICs inside our 3D
Packaging magazine #17!
Jrme Baron, baron@yole.fr
events
3-D Architectures for Semiconductor
Integration and Packaging
December 8 to 10, 2010 - Burlingame, CA
EPTC
December 8 to 10, 2010 - Shangri-La Hotel,
Singapore
IC Packaging Technology Expo
January 19 to 21, 2011 - Tokyo, Japan
gold partners:
2
Newsletter on 3D IC, T S V, WLP & Embedded Te c h n o l o g i e s
a n a l y sis
Next up for 3D ICs: Wide I/O
From page 1
In a nutshell, the wide I/O interface allows us to reach
a high bandwidth at an acceptable power consumption
level for a cell phone; it is exhibiting an extremely
interesting power per bit ratio. And on top of that, its
a standard that should be able to evolve toward even
higher performances, with an evolution path from SDR
to DDR and frequency increase, points out Yann
Guillou, who leads 3D and advanced packaging in
the CTO and Strategic Planning Office at ST-Ericsson
(Geneva, Switzerland), a leader in innovative mobile
platforms and wireless semiconductors.
The performance targets are for significantly lower
power at a high bandwidth with small form factor.
These specifications are being set by JEDECs 42.6
Committee, in collaboration with memory suppliers,
with 12.8GB/s bandwidth for initial instantiations,
says Matt Nowak, senior director of engineering
in the VLSI Technology Group, CDMA Technology
Elpida DRAM memory roadmap for Wide I/O
Division, at Qualcomm (San Diego, Calif.), a leader interface with TSV in next generation smart-phone
mobile and tablet devices (Courtesy of Elpida)
in next-generation mobile technologies.
would like even more if it was available, says Pete
The key reason driving wide I/O interfaces is
lowering the device power while maintaining the ONeill, Test, Reliability, & Technology Engineer.
same performance and bandwidth requirements. In Regarding latency, the lower the better. Avoiding
some cases you can reduce the power from 10W the latency of a serial interface really helps. As far
to 4W, says Calvin Cheung, vice president of as power consumption, our customers are limited
engineering for application and design at Taiwan- by power in many cases, so theyre trying to get
as much performance as possible within a power
based packaging and testing house Advanced
envelope. Serial I/O power is a big contributor to
Semiconductor Engineering (ASE).
overall power, and wed like to eliminate that.
At San Jose, Calif.-based Avago Technologies, a
provider of solutions for wireless communications, Breaking it down a bit more, programmable chip
the driver for wide memory I/O is a high data rate provider Xilinx Inc.s (San Jose, Calif.) Patrick
Dorsey, senior director of product management,
with low latency. Were seeing 10s of GB/s on
and Arif Rahman, principal engineer and
products were working on right now, and our
customers are moving us to 100s of GB/s and technology architect, explain that when using field-
Nokias Wide I/O interface between logic and DRAM memories with need TSV interconnects to meet the next
generation performance requirements (Courtesy of Nokia)
N OVE M B ER 2 0 1 0 i s s u e n 1 7
Xilinx recently introduced 3D Silicon intersposers with TSV for wide I/O interface in FPGA products
programmable gate arrays (FPGAs), their customers
use a variety of bus lengths and proprietary
wide interfaces to maximize performance. SoC
designs comprise millions of gates connected by
complex networks of wires in the form of multiple
buses, complicated clock distribution networks,
and multitudes of control signals. To successfully
partition a SoC design across multiple FPGAs
requires an abundance of I/Os to implement the
nets spanning the gap between FPGAs.
And Kauppi Kujala, senior technology manager at
Nokia R&D, sums it all up: Wide I/O performance
target assumptions include 12.8GB/s, peak
bandwidth, 4-channel SDRAM x128 200MHz-
type interface, 1.2V LVCMOS look-alike, power
approximately 500mW (which offers a large power
savings compared to LPDDR2), with a maximum
DRAM memory die count of 4.
Whats driving wide I/O?
The key driver behind wide I/O right now is that the
mobile phone industry is embracing it as a solution
to combine processors with memories, especially
for high-end smartphones and connected devices.
Smartphone marketshare has soared from less
than 5% a few years ago to nearly 30% today.
And devices such as tablets, e-readers, or
netbooks are also appearing and bringing along
demanding needs for high bandwidth data without
major power penalties. The web experience is
being redefined with the mobile phone, and HD is
moving from our home environment and becoming
mobile. As a consequence, the computing power
of new application processor engines (APE) and
multicore CPUs is growing and the latest solutions
are being defined to run well above 1GHz, Guillou
says. Similarly, the multimedia performance of
these APE will need to deliver features such as
HD 1080p encode/decode with 60fps or even
higher, dual density, 3D graphics, etc. To deliver
this performance, the wide I/O interface is one
technology of interest.
(Courtesy of Xilinx)
Guillou expects this new interface to make an
appearance on high-end platforms first, followed
by potential penetration into lower-end market
segments later.
Wide I/O is based on highly parallelized interface
with a relatively low memory frequency of 200MHz.
This means that more than 1100 connections are
needed to connect the logic die with the memory
die, he explains.
Networking is the application thats driving Avagos interest
in wide I/O. 3D integration makes a wide memory
interface spatially possible, while drastically reducing I/O power,
explains Pete ONeill, Avago Technologies
Such a high number of interconnections cant
be done through a traditional package, such as
package-on-package (PoP), where the ball pitch
is in the range of 0.5 or 0.4mm. Dies need to be
Nokias next generation mobile phones and tablet systems will need wide I/O interface based 3DICs with
TSV interconnects for high bandwidth, low power consumption (Courtesy of Nokia)
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
directly connected to the laminate substrate.
Flip chip is currently preferred over wire bonding
for APE, due to high I/O density and specific
performance needs, adds Guillou. So, if the logic
die needs to be flip chip and the wide I/O memory
needs to be directly connected to the logic die,
TSV must be implemented in the logic die so we
can obtain a face-to-back configuration where the
active part of the memory die is facing the backside
of the logic die.
Concurring with ST-Ericssons perspective, Nokia
believes that for mobile phones there are many-use
cases such as 3D graphics, 1080 encode/decode,
external HD displays, and especially the related
multitasking, which are behind the adoption of the
wide I/O interface. We see it as the best approach to
integrate logic with DRAM by having the logic flip chip
connected to a substrate with TSV connections to
the backside for the wide I/O interface, with memory
facing the backside of the logic, Kujala says. If
theres more than one DRAM bump connected to
the logic, then the DRAM also needs TSVs.
As ONeill puts it: Networking is the application thats
driving Avagos interest in wide I/O. 3D integration
makes a wide memory interface spatially possible,
while drastically reducing I/O power. Networking
chips need multiple, independent memory arrays,
each with a wide interface that pushes memory-to-
logic interface density beyond the capability of side-
by-side multichip interconnect technology.
Dorsey and Rahman say that Xilinxs
customers, encompassing aerospace and defense,
communications, medical, test and measurement,
high-performance computing, and ASIC prototyping
3
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
(emulation), who want to implement their next-
generation applications with FPGAs, are likely
to benefit from the earlier availability of the
most resource-rich FPGA devicesincluding
applications with wide I/O interfacing requirements.
Challenges for commercialization?
There are a variety of interesting viewpoints about
what the biggest commercialization challenges for
wide I/O will be.
Brighton sees three big challenges for the
commercialization of the wide I/O interface. First:
the availability and maturity of process technology;
this is just starting to come together. Two: Cost. A
wide I/O interface requires added performance,
but the consumers willingness to pay for it is
limited. Whatever we do must be cost effective.
Three: Standardization. Today there is no wide
I/O standard, but momentum is really growing, he
says. And while interposers make sense in some
applications, the cost of the additional piece of
silicon needs to be taken into consideration.
ONeill says the biggest commercialization
challenge is interesting DRAM makers in offering
a wide interface, high data rate, low latency chip
suitable for networking, especially one divided into
multiple arrays, given the size of the networking
market compared to mobile devices and PCs.
What we really want to see is a wide I/O memory
wafer that can be configured in both interconnect
and physical size to match a variety of ASICs, he
adds. ONeill expects the second-largest challenge
will be the supply chain.
Nowak sees cost as the biggest hurdle, especially
for cost-sensitive, high-volume mobile applications.
He says he wont be surprised if interposers are used
for applications such as servers, FPGAs, and tablets
where size isnt an issue, but believes theyre unlikely
to be used in smaller form factor mobile devices such
as smartphones due to size and cost constraints.
Mobile & Portable Devices are Placing Stringent Demands for DRAM bandwidth
4
Logic + Memory Integration Scenarios (Courtesy of QualComm, IMEC & Javelin)
Guillou believes the main challenge of wide I/O is its
intrinsic novelty that can be considered disruptive
and the fact that it impacts many different areas.
Obviously, a mature, reliable, fully characterized
TSV and assembly technology at an affordable cost
process is required, he says. However, its not
all about process technology. Complexity comes
from the consequences wide I/O interface has, for
instance, on logic die floorplans, 3D design flow,
testability, memory hierarchy, business model, and
supply chain. In the end, to be successful, wide I/O
needs to be technically and commercially viable for
all players involved along the supply chain.
In the end, to be successful, wide I/O needs to be
technically and commercially viable for all players involved
along the supply chain, explains Yann Guillou, ST-Ericsson
A wide I/O JEDEC standard defines bump positioning
and assignment of signals to have all memory
providers delivering the same ball out. As a result,
the silicon interposer that matches the memory with
the logic die becomes optional, Guillou says. The
mobile industry has to deal with tough cost, footprint,
and thickness constraints. The wide I/O interface
(Courtesy of Rambus, Yole Developpement)
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
already isnt free. Adding an additional interposer,
which should contain TSV and microbumps as well,
wont help make this technology more affordable or
the final stack thinner. The silicon interposer isnt the
option ST-Ericsson is considering.
There are also many technical challenges related
to the wide I/O bump interface, Kujala points out,
such as how to connect more than 1200 bumps
between the dies. The die must have very good
coplanarity to be able to connect the other die with
bump and interface into that, he says. If we will
have more DRAM dies, are the memory dies coming
separate or as a pre-assembled memory cube?
Kujala doesnt see a major benefit from a silicon
interposer between logic and DRAM. The other
solution would be side-by-side logic and DRAM on
top of a silicon interposer, but thats not for mobile
phone applications due to the large size. Nokias
target is to go for wide I/O without an additional
silicon interposer, he explains.
And from an OSAT perspective, the biggest
challenges are thin wafer handling and tight pitch
assembly for the middle-end and back-end assembly
process, says Cheung. Another challenge, he adds,
is the known good die test methodology.
Standardization?
Standardization will play a critical role in 3DIC
integration and is currently being discussed by
many industry organizations.
Industry collaboration has already begun. There
are a variety of standardization and consortia
groups working on TSV, so theres a lot of
momentum in this area, Brighton says. In addition
to overt standardization efforts, TI expects to see
significant convergence of ideas as the technology
matures, but this effect of natural selection will take
some time to develop.
N OVE M B ER 2 0 1 0 i s s u e n 1 7
Standards body JEDEC is among those leading
important standardization activities for wide I/O,
and companies such as OEMS, memory providers,
chipset suppliers, and test, packaging, and IP houses
are also deeply involved in the process, notes Guillou.
Nokia is among those participating in JEDECs wide
I/O standardization work, and Kujala says that their
preference is to follow JEDECs lead. Based on the
standard, there will be an offering by IC suppliers,
he explains. For the whole 3DIC technology
development, having a standard is a positive step,
and Nokia sees this activity as one of the first
common targets for the entire industry.
Xilinx is also working with industry groups including
Imec, Sematech, and SEMI to help promote and
support standardization in this area, according to
Dorsey and Rahman.
Avago firmly believes standardization is essential,
ONeill says, although its not yet clear whos
leading since several standards organizations
(JEDEC, GSA, SEMI, IEEE) have recently become
involved in 3D integration work and each is
addressing different aspects. At a recent JEDEC
meeting, Avago proposed creating a task group to
develop a standard for a configurable, stackable,
high data rate, low latency DRAM. The JEDEC
42.2 committee assigned this item 1787.01 and is
organizing the task group.
Cheung and Nowak indicate that theyre seeing
many companies from the semiconductor industry
participate in the wide I/O standardization committee
efforts.
Bottom line: The industry is clearly collaborating and
targeting wide I/O standards. Its only a question of
timing now.
Ahead: Supply chain issues?
The supply chain is a key part of the wide I/O
approach, and there are issues worth noting.
Nearly everyone involved in 3D integration cites the
supply chain as their major practical concern, points
out ONeill. Its not at all clear how the established
players will divide the new functions and whether
new players will fill in the gaps, he says. The supply
chain is particularly difficult for fabless companies
that need suppliers for new operations such as TSV
formation and die-to-wafer bonding that neither the
foundries nor OSATS currently provide.
A good example in terms of whos responsible
for what: Guillou expects via middle TSV is the
technology option the industry is most likely to select,
with the TSV process run in foundries between
FEOL and BEOL. TSV will be embedded within a
regular thickness CMOS wafer, he explains. To
make the TSV emerge and connect the logic die with
the memory, the logic wafer will need to be thinned
to a few 10s of microns. Depending on what point
in the chain the foundry stops and the assembly
begins, very thin wafers or stacks will be manipulated
and exchanged between foundries and assembly
houses. These aspects are an area of concern for
companies, especially since using a temporary
carrier to ensure rigidity of the thin wafer stacks
would be necessary. If carriers are used, some
agreements should be redefined between foundries
and packaging housesespecially regarding the
bonding/debonding process. This is a key step in the
process that also needs standardization.
From Brightons perspective, chip suppliers and
OSATs must collaborate more closely to meet
customers requirements. As an industry, we have
challenges about the compatibility of processes and
materials used by different foundries and OSATs, he
says.
Another challenge Cheung sees is timing. How
quickly and effectively the industry can come up
with cost-effective assembly equipment and an
Calvin Cheung is vice president
of engineering for Application
and Design at Advanced
Semiconductor Engineering (ASE)
Inc. Before joining ASE, Cheung
spent many years at AMD, in
a variety of engineering and
management roles. Later, he was the manager of
product development engineering where he was
responsible for building and managing the chipset
development engineering group. Prior to working
with the chipset group, he held a number of positions
within other product groups at AMD, gaining vast
experience in various silicon development functions
from design to manufacturing.
Patrick Dorsey, senior director
of product management at Xilinx,
responsible for the overall product
line management, development,
and marketing for FPGAs, CPLDs,
and EasyPath solutions. Dorsey
has been involved in technology
marketing and solutions development for more than
18 years. He holds a B.S. in computer engineering
and a Masters in business administration from the
University of Michigan (Go Blue!).
Yann Guillou leads 3D and
advanced packaging in the CTO
and Strategic Planning Office at ST-
Ericsson. Guillou began his career
at CEA-LETI and then worked at
STMicroelectronics and ST-NXP.
He holds a MSc. in materials and
nanotechnology from the National Institute of
Applied Sciences, and a Masters in Management of
Technology and Innovation from Grenoble Business
School, France.
Kauppi Kujala is the senior
technology manager at Nokia
R&D. Kujala has worked at Nokia
since 1999. Prior to that, he was a
project engineer at VTI Technology.
He holds a M.Sc. in materials
science from Helsinki University of than 10 generations of CMOS technology. He
Technology.
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
assembly process. If this isnt achieved, cost may
be a potential showstopper, he cautions.
While there will be supply chain challenges,
well be working on them, says Kujala. Mobile
products are extremely performance hungry and
performance is the driver behind wide I/O. There
is already consensus in the industry that wide I/O
is needed. To fulfill that needed performance, the
industry will make it happen.
Sally Cole Johnson for Yole Dveloppement
Matt Nowak is Qualcomms senior
director of engineering in the
VLSI Technology Group of their
CDMA Division. His responsibilities
include leadership of the Advanced
Semiconductor and Packaging
Technology Initiatives such as through-
silicon stacking, advanced memory technology, design
for 3D, spintronics, and More than Moore initiatives.
He manages a combination of internal advanced
development teams, supplier JDPs, and consortia and
university projects. He holds BS and Masters degrees
in electrical engineering from Cornell University, has
more than 30 years of semiconductor experience, and
is a Senior Member of IEEE.
Pete ONeill is investigating the
application of 3D integration to
Avago Technologies ASIC Products
Divisions networking and computing
products. His primary responsibilities
concern test strategy and reliability
screening. In 32 years in the IC
units of Avago, Agilent Technologies, and Hewlett-
Packard, ONeill has also worked in the areas of
CMOS processing, SPICE modeling, reliability, and
test equipment.
Arif Rahman is a principal
engineer and technology architect
at Xilinx Inc., where he has
incubated R&D programs, leading
to successful technology transfer
for commercialization. With more
than 10 years experience in digital,
mixed-signal, and sensor design, development, and
supply chain evaluation, he has worked in all aspects
of 3D ICs. He holds a Ph.D. in electrical engineering
from Massachusetts Institute of Technology and an
MBA from Santa Clara University.
Jeff Brighton is a TI Fellow and manages the
CMOS 3DIC technology development program
for Texas Instruments. During more than 25 years
at TI, Brighton has been a key technical leader in
process development and volume ramp for more
helped pioneer TIs flexible, internal and external
manufacturing model for advanced CMOS
technology and also directed TIs 45nm and 28nm
low power CMOS development programs prior to his
role with TIs 3DIC program. He graduated from the
University of Illinois at Urbana Champaign with a MS
degree in electrical engineering.
5
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
c o mp a ny v i s i o n
2- and 3-dimensional design alternatives
for System- and IC Designers
For the last 40 years we were able to double transistor counts of ICs every ~ 2 years and managed to follow Moores
Law by shrinking feature sizes successfully. With every new process generation we achieved higher speed, lower
power and even lower cost per function --- until recently.
W
hile process experts are confident to
continue on the shrink-path for a few
more generations, the challenging design
requirements and costly manufacturing equipment
triggered the search for alternatives to shrinking of
2-dimensional SoCs.
The first viable 3-dimensional alternatives started
to gain market share about five years ago. PoP
(Package-on-Package) and SiP (System-in-
Package) demonstrated space and/or power
savings, compared to implementing the same
functions in multiple 2-dimensional SoCs.
To gain more from utilizing the 3rd dimension,
leading edge companies focused on thinning
wafers to less than 50 microns and started to
interconnect bare dice with TSVs (Through Silicon
Vias). This 3D/TSV stacks were even faster, smaller
and consumed less power than SiP solutions.
As leading edge wafer foundries and OSATs
(OutSourced Assembly and Test houses) engaged
in the development of the necessary manufacturing
flows and encouraged their equipment vendors
to meet the demanding new requirements, it
became clear that 3D/TSV technology offered
many compelling benefits but still required
development efforts to become cost-effective in
volume production. Also, to fully utilize the 3D/TSV
benefits, the individual dice need to be designed
IC- and System-Implementation Alternatives (Courtesy of eda2asic)
6
3D-ready with the TSVs and their drivers and
receivers included in the layout, instead of the
much larger I/O buffers and bonding pads.
Facing these 3D challenges, creative engineers
developed a less demanding interposer-based
alternative and called it 2D, indicating its
place between 2D SoCs and 3D stacked dice. A
key advantage of the 2D technology is that it can
utilize flip-chip dice, mounted side by side on an
interposer or face-to-face with an interposer in
between.
To give an overview of all these technologies, their
benefits and trade-off, Table 1 below shows in six
columns major implementation alternatives IC-
or system designers can choose from and applies
five technical criteria and two business criteria
to compare these technologies.
The two More Moore alternatives
on the left
The first four technical criteria (speed, power,
form factors) are self-explanatory.
The fifth criteria Heterogeneous Technology
Mix refers to designs comprised of significant
amounts of logic, large memories and/or analog /
RF components, MEMS, sensors, etc.
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
eda2 asic
If implemented in separate ICs, every one of these
functions can benefit from cost-effective, dedicated
process technologies. This benefit also applies
to all four More than Moore alternatives and is
essential to produce highly integrated solutions
cost-effectively.
Applying this fifth technical criteria to one large
SoC, the most common alternative today, shows
that significant technical challenges arise. Despite
very flexible and capable process technologies
and design tools, the implementation of logic and
memory and/or analog, is not as easy as dedicated
processes can enable and often forces relaxing of
specifications.
First business criteria (Time to Profit): It gets
increasingly difficult and time consuming to
integrate all functions needed into one large SoC
and manufacture the design cost-effectively in a
universal process technology. Design iterations
and yield enhancement efforts can further delay
the product introduction, increase time to profit and
reduce profit margins.
Distributing the functions into multiple ICs allows
more reuse, reduces the application-specific
development efforts and helps to get to market
and profit faster.
However, many applications need higher
performance or dont allow the power budget or
space required for multiple SoCs.
The second business criteria (NRE and Risk)
is closely related with the first. As a consequence
of increasing design complexity, the hardware
development cost for one large SoC is increasing.
So is the risk of functional failures at the first
tape-out and additional mask cost as well as yield
variations in production.
The multiple SoCs alternative reduces the risk
of failures and yield variations, but multiple SoCs
may not meet the technical application criteria and
the tooling cost for them can add up to a significant
amount.
The two proven More than Moore
alternatives in the center
The five technical criteria show that PoP and
SiP alternatives cant compete with the one large
SoC alternative in regards to speed and power
dissipation, but have a clear advantage if the
N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

The business criteria show that both emerging

technologies are rapidly maturing and will
complement their technical benefits with compelling
value propositions.

As mentioned at the beginning of this article, to

fully benefits from the 3D/TSV advantages, the
dice need to be thinned and have a 3D-ready
layout with TSVs, but have the large I/O buffers and
bonding pads removed to reduce area, silicon cost
and power dissipation.

www.eda2asic.info

Herb Reiter, president of

2 D Alternatives - Interposer/Substrate in RED (Courtesy of Paul D. Franzon, NCSU)
design requires a mix of logic, memory and/or
analog functions.
While PoP and most likely also SiP quickly exceed
the allowed package height, they are equal or
better than multiple SoCs in regards to the other
technical criteria.
Both PoP and SiP have proven their benefits in
regards to the two business criteria.
eda2asic Consulting, Inc.,
is an industry veteran with
20 years of semiconductor
experience and 14 years of
providing high-productivity
EDA tools, IP blocks,
The two emerging More than Moore design services and the
alternatives on the right support of industry organizations to semiconductor
vendors.
The technical criteria show the significant benefits Herb founded eda2asic in 2002 and focuses since
of 3D/TSV technology and where the interposer- 2008 on chairing the GSAs EDA Interest Group
based 2D alternative is equal to a large SoC and the 3D Working Group to accelerate and
and better than multiple SoCs. broaden market acceptance of 3D/TSV technology.
Herb can be reached at herb@eda2asic.com.

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Intl Conference Hall, Makuhari Messe.

alchimer.com

alchimer_micronews_1-2pgad_Nov22_3.indd 1 11/22/10 5:45 PM

7
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

c o mp a ny v i s i o n

Stud bumping serves as TSV alternative

for BSI image sensor in latest iPhone 4
Chipworks Inc. recently opened the 5MPixel camera module from latest iPhone 4 of Apple. Yole and Chipworks had
the chance to redact a join article analysing the possible reasons for the choice of stud bumping technology on
ceramic carrier for the final packaging of Omnivision BSI image sensor.

I
n the February 2010 Yole 3D Packaging
newsletter we discussed the advantages of
Xintec WL-CSP used by OmniVision/TSMCs
first back illuminated (BSI) image sensor. We were
excited by the iPhone 4 announcement in June
which included mention of a 5 Mp, 1.75 m pixel
pitch BSI camera module. Early speculation of
an OmniVision design win proved to be true and
one surprising find from the reverse engineering
analysis is yet another approach to BSI CIS
package integration.

The 5 Mp iPhone 4 camera module, which

integrates an LED flash assembly, was assembled
by LG Innotek. The module dimensions are 9.2 mm
x 9.2 mm x 6.2 mm thick (excluding the LED flash).
The large form factor is a clue that CSP is not used
for this device.
to the chip carrier lands, while a die under fill
material encapsulates the die periphery. This type
of packaging for a CIS application has typically only
been seen in some front-illuminated DSLR camera
sensors.
Tilt and cross-section SEM views show details of
the bonding region on the die. The final steps of the
wafer process flow included opening windows in the
dielectric stack over the bond pads. In this case, the
Apple iPhone 4 Rear Camera BSI Image Sensor
(Courtesy of Chipworks)
bond pad metal is the back of the aluminum metal 2
die interconnect. TSMC would have then shipped
the wafers to the packaging house for dicing and
formation of the gold ball bonds and gold studs.
While OmniVision/TSMC do have a TSV process for
BSI parts, the back bonding scheme has provided
what is likely a higher yielding alternative that
satisfied Apples specification. Additionallly, this
approach enables the flexibility to also simply wire

Apple iPhone 4 Rear Camera Module

(Courtesy of Chipworks)
The lens barrel is affixed to a ceramic chip carrier
likely fabricated by Kyocera. Surface mount
capacitors, a flip-chip mounted autofocus ASIC
die, and a glass window are mounted to the front
of the chip carrier, while a BSI image sensor die is
seated in a cavity in the back. A die photograph of
the back, or light-receiving, surface appears similar
to a typical front-illuminated sensor. Instead, in this
implementation the ultra-thin BSI silicon substrate
has been etched at the die edge allowing access to
the back of the bond pads.

A side view X-ray and schematic diagram show

the ceramic chip carrier and BSI die configuration. Apple iPhone 4 Rear Camera Die and Package X-Ray, Schematic
Gold studs are used to connect the die bond pads (Courtesy of Chipworks)

8
N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

Apple iPhone 4 Rear Camera Die Bond Pad Region (Courtesy of Chipworks)
bond directly to the pads as we saw in the new 4th
generation iPod Touch 0.7 Mp BSI camera module.
In summary, with a little ingenuity CIS foundries and Jrme Baron leads Yoles Ray Fontaine has been
IDMs need not take on the cost and complexities of MEMS and Advanced a process analyst at
a TSV process for all applications. Contrasting the Packaging market research. Chipworks since 2001,
investment required for TSV integration in a 300 mm He has been involved in the specializing in image
wafer process, these devices show what is possible technology analysis of the 3D sensors. He has authored
packaging market evolution and technically reviewed
using 200 mm wafer fabs and a depreciated wire
at device, equipment, and numerous image sensor
bonding toolset. Given the low number of I/Os and material supplier levels. process review (IPR)
large pad pitch, BSI CIS represents a sweet spot for Baron earned a MSc. Degree reports.
gold stud bumping. in Micro and Nanotechnologies from the National
www.chipworks.com Institute of Applied Sciences in Lyon, France.
www.yole.fr

CMOS Image Sensors

technologies & Markets - 2010 Report

Disruptive technologies pave the way to the future of digital imaging industry!
MaRKEt tREnDs
the reason why we are now releasing the first report on cMos
image sensor industry is that we feel that we are at an historic
turning point of this young, but still maturing industry. says
Jrme Baron, technology & Market analyst, MEMs & advanced
Packaging.

KEY FEatuREs CMOS Image Sensors Technology Drivers:

New Challenges to face !
the objectives of this first report are to provide:
Market data on CMOS image sensor key market metrics &
dynamics: cMos image sensor unit shipments, revenues and BSI (Backside illumination) HDR (Hide Dynamic Range)

wafer production by application, market shares with detailed

New color filters, AR coatings eDoF (Extended Depth of Focus)
Pixel isolation, substrate techno NIR (Near IR Capability)

breakdown for each player

Front-end Software / Design

Packaging / Assembly Optical module

Key technical insight about future technology trends & challenges: WLP (Wafer Level packaging)
3D TSV interconnects
WLO (Wafer Level Optics)
Image stabilization (MEMS Inertial)
YOLE DVELOPPEMENT

Wafer Level Camera & Molding Auto-focus (Piezo, liquid lense, MEMS)

from BsI and other front-end technologies evolution to WLc

realization with wafer level optics, packaging / assembly & test
A deep understanding of CIS value chain, infrastructure & players
Y O L E D V E L O P P E M E N T

contact us

For more information, feel free to contact David Jourdan: Y O L E D V E L O P P E M E N T

tel: +33 472 83 01 90, Email: jourdan@yole.fr

9
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
c o mp a ny v i s i o n
Interview with Dr. William Chen of ASE
From page 1
Yole Dveloppement: So you joined ASE in
2000. What are your job responsibilities in the
ASE organization?
Bill Chen: As ASE Fellow and Senior Technical
Advisor, I have a broad portfolio of technology
strategy, customer involvement, product promotion,
and industry networking. I work with a small group
of senior experienced industry veterans. As a part
of the ASE global sales and marketing organization,
we have the opportunity to engage with the senior
technical leaders in the global customer community
while at the same time, have strong linkages deep
into the manufacturing engineering and R&D
organizations in the ASE family.
YD: There are so many exciting things going on
in Advanced Packaging today its hard to know
where to begin. Certainly ASE has been deeply
involved with scaling up the Infineon eWLB fan
out technology can you share with us whats
been involved and where that stands?
BC: ASE has been serving customers in WLCSP
for over ten years. eWLB (fanout WLP) is the
natural extension of our WLP service offerings to
customers. ASE was the first OSAT to collaborate
with Infineon on eWLB , taking the technology
successfully into high volume manufacturing
production in April 2009. We put together a
dedicated team to work with the Infineon team for
volume manufacturing implementation. There has
been much learning on both sides. The yields have
been steadily climbing above 97% and the goal of
99% is now well within reach. The initial production
has been focusing on single die fanout packages.
Engineering development is ongoing with multiple
customers focusing on the future generations of Fan
out products, including 2D Multi-die and 3D Double
sided fan out packaging, incorporating additional
features such as Integrated Passive components.
10
YD: Amkor and TI have recently announced
their advances in Cu Pillar technology. Can you
share with us where this technology stands
at ASE and what we can expect in the future ?
What applications are requesting ? or are suited
for this technology ?
BC: As you well know, Intel has been in production
with Cu Pillar for their microprocessor flip chip
package for some years. Cu Pillar technology
brings significant advancement over traditional
solder bump technologies in flip chip packaging.
It provides a lead free solution, improved
electromigration performance, cost reduction of
the laminate substrates, and as a controlled stress
environment for ULK dies. As a leader in advanced
packaging innovation, ASE has been developing
(Courtesy of Ase Group)
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
(Courtesy of Ase Group)
an excellent set of packaging solutions in this
area for our customers that include PC and mobile
processor device makers.
ASE has been working on Cu pillar technology for
several years and is working closely with a number
of customers. The highest level of interest is in
the area of mobile application processors , which
drive integration and small package size. These
applications need fine pitch i.e. slim pillars to shrink
the pitch while allowing escape traces between the
pillars. The later facilitates lower cost substrate
technologies in FC CSP and thereby an overall cost
effective package.
YD: Looking at ASE integrated passives
technology, how has customer acceptance
been on this technology? Can you tell us where
the focus has been application wise?
BC: ASE is working with customers producing IPDs
for integration into module package assemblies. IPDs
are very well suited for the high levels of integration
and miniaturization required for the next generation of
advanced modules. The most common application is
the integration of various filters into RF applications.
The incorporation of IPDs into Interposers, 3D
packages, and Fanout packages is an important
aspect of the ASEs technology portfolio.
YD: ASE has been a leader in bringing copper WB
into the mainstream. Any issues with bringing
up this technology? Any issues with customer
acceptance? Can you tell us what % of your
business you expect to switch over to copper WB?
BC: You have hit the nail right on the head: technical
challenges and customer acceptance. Changing
from Au wire to Cu wire involves a whole set of
changes in materials, equipment, and manufacturing
processes. It took a lot of hard work and
commitment from the top management to process
N OVE M B ER 2 0 1 0 i s s u e n 1 7
engineers, and manufacturing operators to make
the Cu wirebond qualification and implementation
seamless for customers. ASE actively worked on
fine pitch Cu wire bond technology for a number
of years before starting high volume production in
September of 2008. With gold price escalating,
there is real cost benefit for the customers across
a broad spectrum of products. Many technical and
manufacturing challenges were addressed one by
one. This is indeed is a major step forward for the
industry. We are proud that we have won over many
customers by providing them with solid reliability
data and manufacturing track record. ASE will exit
2010 having shipped approximately 2 billion units,
with approximately 30% of our wirebond output
allocated to copper. We expect the conversion rate
to exceed 70% within the next 2-3 years, and expect
Au to be only a niche (<10%) after 2015.
YD: Certainly many of our readers are following
the emergence of 3D / TSV technology very
closely. How would you describe overall 3D
status at ASE? What issues have been resolved
and what issues are still to be solved?
BC: 3DIC / TSV offers significant advantages for
many customer applications in the market place,
from wireless to PC and server applications. ASE is
collaborating closely with key customers and foundry
partners to enable the full middle and backend process
elements of 3D / TSV technologies. While basic
process technology feasibility has been demonstrated,
there is still much work to do. Areas include material
handling of thin wafers that require dual side
patterning, warpage control, testing including ultra-
fine pitch probe, and overall cost of manufacturing.
Standards are needed for physical connection of the
various IC elements in 3D structures. Co-design tools
must be ready. For TSV enabled integrated packages,
test will be a major challenge for the industry.
YD: ASE has been a strong proponent of
interposers for the initial stages of full 3D IC
stacking. Can you tell us something about
your interposer program and when we can
expect to see something in production? We
are hearing that single chip interposers for the
32 and 22 node will be an important interposer
application space is this correct? When can
we expect interposers applied to 3D stacks?
BC: Silicon interposer is a viable, if not critical,
enabler for addressing the CPI issue with CTE
mismatch between ELK silicon die and organic
substrate. We agree with you that 32 and 22 nm
node will be an important application space. It
will also be an important package solution for 3D
heterogeneous integration. We are working with
our foundry partners and our key customers on
a number of interposer package development
programs. For example, the interposer could
include a 3D memory stack in the architecture
design. In our view, production ramp will be
sometime in late 2012 or early 2013.
YD: What can you say about your standard 3D
process? Cu metal?, oxide liner?, Cu/Sn bonding?
underfill?, expected initial pitch ? Anything
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
that makes the ASE approach BC: We have test vehicles designed
different or more reliable than your with our partners that have been
competitors? generated for process evaluations in
our R&D environment. Technology
BC: We are working with multiple
feasibility demonstrations and stress
partners on various Middle process
tests are on schedule for middle end
approaches for the assembly of die with
and back end assembly processes.
TSVs into their final package assemblies.
ASE will expand our capabilities for
ASE has developed a TSV formation
wafer level processing and assembly
process, middle end, and final package Dr Bill Chen,
within 2011, aligning our schedule
assembly capability for 200mm wafers. Fellow and Senior
to meet our customer development
300mm wafer capability is on schedule Technical Advisor, ASE
timeline requirements. At this time we
for next year. ASE has developed both
do not have products qualified.
copper solid fill and copper lining plating with polymer
isolation for the TSV processing for both via middle YD: When it comes to D2W bonding what is
and via last. The polymer isolation provides better the thinnest chip you can currently handle?
electrical performance and lower stress distribution What can you tell us about handling these
than some alternative barrier and isolation techniques. thin die?
Underfill materials and underfill application process
BC: We have good success with D2W bonding with
are also crucial parts of assembly for microbump
50m thick die using thermocompression bonding
interconnection of silicon dies with TSV.
and NCF underfill. Engineering development has
YD: Many are assuming that the OSATS will demonstrated success with alternative approaches
be responsible for bond, test and package. of die to substrate and die to memory stack
However, another option would be for the assembly for 3D stacked packages. For handling
OSATS to receive the wafers with TSV directly chips at this thickness, sawing tape, ejection
from the foundries and then be responsible for system & bonding tool design in TC bond, and die
everything else including thinning, backside flatness are keys for successful yields
processing, bond, test and package. Has this
YD: Without telling us who, can you share
division of labor been determined between ASE
anything about customer pull for 3D with
and the foundries. If you had to guess how you
interposers and full 3D stacks?
expect this to play out?
BC: We have talked to many customers. The
BC: We have many customers working with different
strongest interests are in mobile processor and PC
foundries. We expect both business models to
applications. And the motivations are market driven
be in play. The issues of test, product liability
as you may expect.
boundaries, as well as competitive supply chain
concerns will have an effect on each companys YD: What unresolved issues does ASE see in
decision regarding which model to employ. the infrastructure?
YD: Are any of the required 3D unit operations BC: Works on various standards is slowly taking
qualified yet at ASE? Can you share with us shape. Particularly important for us are those at the
which ones? When do you expect your full 300 interface connections.
mm line to be in place?
(Courtesy of Ase Group)
11
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
YD: Is ASE confident that testing protocols will
be in time for initial product production?
BC: Typically, the IC houses are responsible
for test protocols. In this case, we will have SiP
with processor and memory, with which we have
good experience and knowledge. While test will
be an important challenge, we are confident that
working closely and early with our customers, and
developing the test hardware and test protocols
together in the whole development process we will
be ready for production.
YD: Qualcomm has publically stated that anything
over a 15% premium for 3D IC could be a deal
breaker. Does ASE see this as being possible?
What will it take to achieve these cost goals?
BC: The total cost of the solution must be evaluated
for each application. We are sure that Qualcomm
has done a good study of the market and the front
end and back end processes to come up with this
15% premium for their own set of applications. The
front end 3DIC die with TSV formation and backside
processing steps will add to the throughput. The
backend will have additional processing steps due
to TSV expose and ultra fine pitch assembly. Both
front and back end have thin wafer handling added
to their processing. We believe the 3DIC - TSV
technology will be commercialized. The ability of
Make plans to attend today ...
This conference provides a unique perspective of the techno-
business aspects of the emerging commercial opportunity
offered by 3-D integration and packagingcombining
technology with business, research developments with
practical insightsto offer industry leaders the information
needed to plan and move forward with confidence.
For more information visit:
http://techventure.rti.org
12
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
ASE Silicon interposer prototype (Courtesy of Ase Group)
our technical community to collaborate on common BC: You have touched on most of the high profile
manufacturable standards will certainly impact the topics in our industry. While 3DIC/TSV is the
final cost of the 3D structures to the market. highest profile technology in many peoples minds,
let us not forget that electronics are ubiquitous,
YD: Many of the recent roadmaps from foundries
IC is not all CMOS, and innovation is needed
such as TSMC and UMC and assembly houses
everywhere. A prime example is ASEs initiative on
like ASE, SPIL, Amkor, STATS ChipPAC appear
Cu wirebonding. We are working with customers
to agree that we will see interposers in the
on MEMS, and on heterogeneous integration with
2010-2011 timeframe and full 3D IC stacking in
different SiPs and modules. We are working on
the late 2011 2012 timeframe. As of today is
thin, low cost substrates. At the other end of the
ASE standing by these predictions? Do you
semiconductor spectrum are the low pin count
see these roadmaps as aggressive or realistic?
ICs and discretes. A couple of years ago, ASE
entered the business to serve the low pin count IC
BC: In ASE we design our roadmaps to be
and discrete customers in Weihai, China, and now
aggressively realistic. We are already actively
we are well established in this area. We believe
engaging with key customers in both 3D IC and silicon
in technology and business model innovations to
interposer. We position our roadmap forecast to be
serve customers large and small across the globe.
in line with our readiness for customer engagement.
Production schedules are determined by customers YD: Thanks so much for fielding these
and their end user customers and highly influenced questions.
by the market.
BC: Thank you for bringing this discussion to your
YD: Any other topics that our readers might be many readers.
interested in?
Phil Garrou Sr Analyst
3-D Architectures
for Semiconductor
Integration and
Packaging
Keys to Design, Manufacturing, and Markets
810 December 2010
Hyatt Regency San Francisco Airport Hotel
Burlingame, California
pub_movea_186X132:Mise
N OVE M B ER 2 0 1 0 i sen page
s u e n1 125/11/10
7 9:31 Page 3
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

REGISTER FOR LIVE WEBCAST TODAY

Enabling next generation motion solutions
for consumer electronics
Join our webcast to examine the challenges faced by system integrators to develop products
with advanced motion features.

We will discuss the MotionIC platform, now available to help developers meet market demands
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To learn more and to register, please go to
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When: Wednesday, December 15
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Speakers:
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Tim Kelliher, Customer Solutions Architect, Movea
Jean-Christophe Eloy, CEO, Yole Dveloppement

c o mp a ny
CMA3000v(Courtesy
i s i ofoVTI)
n

The MEMS pioneer VTI relies on its proprietary

3D MEMS technology
VTI Technologies can be considered as a pioneer in MEMS for the past 20 years.

T
he company is a leading supplier of
acceleration, inclination and angular motion
sensor solutions for transportation, medical,
instrument and consumer electronics applications.
VTI develops and produces silicon-based capacitive
sensors using its proprietary 3D MEMS (Micro
Electro-Mechanical System) technology.
In 2009 VTI was the first MEMS company to adopt
Wafer Level Packaging in the worlds smallest and
least power consuming three-axis acceleration
sensor, the CMA3000, and the company has
already announced that it will launch new MEMS
solutions at Electronica 2010.
Mr Anssi Korhonen, VTI Chief Technology Officer,
was interviewed for the MEMS Trend Magazine.
CMA3000 (Courtesy of VTI)
Yole Dveloppement: VTI is one of the very few
MEMS companies using a Through-Glass Vias
technology for its 3-axis accelerometer. Why
using glass wafers instead of Si?
Anssi Korhonen : We are actually using a silicon
wafer and molten glass material for isolation of
TSVs. Benefits of the VTI cap wafer technology
include good insulation and very low parasitic (stray)
capacitance. Glass, on the other hand, provides
planar surface and reliable bonding interface to
the structural wafer. Also, glass is very inexpensive
starting material, Mr. Korhonen explains.
YD: There are different ways to do TGV. What
makes the VTI technology specific?
AK: The process is VTI proprietary technology. We
avoid using plating processes in forming the vias. It is
compatible for wafer level processing although needs
some specific equipment. Currently we are satisfied
with the via resistance in the tens of ohms range.
YD: Is VTI Technologies planning to use its TGV
AK: The technology in its initial form (planar
isolation and one via) has been in use since 1984.
In the late 90s due to requirements by multi-axis
accelerometers and gyros we added the capability
for a multitude of vias. More recently this technology
has been developing for finer pad pitch and size by
utilizing dry etching of silicon instead of mechanical
machining. The process is scalable for larger wafer
sizes. It is used for all VTI MEMS designs.
YD: VTI has recently achieved the smallest
accelerometer on the market (2x2 mm). Do you
plan to go even smaller?
AK: Smallest size components can be achieved
with the Wafer Level Packaging (WLP) technology,
which is close to WLCSP technology that has
received wide acceptance in the market. VTI WLP
goes one step further by flip chip attaching ASIC on
the MEMS sensing element.
Further size reduction is possible and restricted to
specific MEMS or ASIC design requirements, not so
much on packaging technology, Mr. Antti Korhonen
concludes.
www.vti.fi
Mr. Anssi Korhonen, M.Sc. in
electrical engineering, has worked
as Chief Technology Officer for
VTI Technologies since 2008.
He has worked for electronics
manufacturing services industry
since 15 years.

13
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
c o mp a ny v i s i o n
SET makes strides to enable
3D Integration with high precision Chip-to-Chip
and Chip-to-Wafer bonding
SET collaborates with CEA-LETI, STMicroelectronics,
ALES and the CEMES-CNRS on advanced chip-
to-wafer technologies (direct metallic bonding)
for 3D integration: history & content .
Direct copper-to-copper bonding requires a good
planarity and excellent surface quality especially in
terms of both particulate and metallic contamination.
The low roughness of the copper pillars and pad as
well as the topology between the copper and oxide
areas are critical to obtain good bond at low force
and room temperature. The process is developed
by CEA-LETI. ALES is supporting some specific
developments for the surface preparation. The
CEMES-CNRS characterises the bond quality
especially concerning the copper structure evolution
upon annealing. STMicroelectronics is driving the
application of this technology for the high density 3D
integration.
SET has developed a clean FC300 enabling Die-
to-Wafer direct bonding at high yield. The machine
operates at room temperature. Special care has
been taken for cabling in order to reduce drastically
the particle generation. The clean environment
inside the machine housing protects the wafer
surface while it is fully populated with dice.
What are the advantages of this technology
compares to conventional thermo-compression
bonding?
SET is very much interested by this direct metal-to-
metal bonding which enables fast placement for 3D-
IC. It is performed at low force and room temperature
which is advantageous for high density interconnect
applications requiring high accuracy placement as
we do avoid temperature expansion problem. To
ensure void-free bonding, the die placement must be
carried out in a particle-free environment.
JEMSIP-3D: project based on the development
of a High speed bonder required for the high
volume production of 3D devices using the TSV
technology.
Inside view of the FC300 with direct metallic
bonding configuration
14
SET has entered the JEMSiP-3D project to develop
a high accuracy, high speed die bonder for the
production of devices using 3D technology with high
density TSV. The goal is to introduce a die-to-wafer
bonder with submicron placement accuracy with
stacking capability compatible with face-to-face or
face-to-back alignment. A 2-Step approach with
individual placement followed by a global bonding
sequence is favoured.
Semi-open confinement substrate for the FC150
Semi-open confinement chamber for oxide
removal: principle & advantages.
Cu-based systems have become a major focus
as an interconnect material for 3D integration. Cu
surfaces are bonded together using either die-to-
die (D2D), die-to-wafer (D2W), or wafer-to-wafer
(W2W) bonding. The oxides present at the Cu
surfaces compromise results of thermocompression
bonding. To achieve high-quality and reliable
bonding, a controlled environment preventing oxide
formation during the bonding sequence is required;
it is also necessary to remove the oxide that might
be present before bonding. Mechanical scrubbing
cannot be used when submicron accuracy is
needed; therefore SET has developed the semi-
open confinement chamber to enable chemical
oxide removal without jeopardizing the final
placement accuracy. The chamber can be used with
forming gas, but efficiency of the oxide reduction is
significantly increased by using formic acid vapour.
The semi-open confinement chamber includes a
substrate chuck and a bond head with a non-contact
localized confinement which operates safely with
reducing gases such as forming gas or formic acid
vapour. To preserve the standard capabilities of
SETs bonding tools and especially the low contact
force measurement applied to the components,
the Semi-Open Confinement Chamber has no
hardware sealing. A non-contact virtual seal of the
micro-chamber enables gas confinement for chip-
to-chip or chip-to-wafer bonding under controlled
atmosphere. This ensures gas collection and
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
prevents oxygen intrusion while preserving the
alignment of the device with respect to its substrate.
Consequently, it ensures an excellent wetting and
a higher quality of solder joints at reduced bonding
forces and temperatures as well as higher yield as
no cleaning step is required.
With the confinement chamber, the process gas is
injected through horizontal nozzles aimed at the
device being bonded. An exhaust ring removes the
process gas from the micro-chamber and sends it
into the gas exhaust line, keeping the gas out of the
machine and the clean room. A nitrogen curtain is
formed around the exhaust, ensuring that ambient
air is not entrained into the micro-chamber by the
Venturi effect, while a deflector attached to the bond
head creates the confined micro-chamber. The
wafer acts as the deflector for D2W configuration
when the chamber is attached to the bond head.
Yole Dveloppement understands that SET
mainly works on accurate placement. What
is SETs market positioning with respect to
placement accuracy? What are the trades-offs
being made to achieve such levels of accuracy?
For over 30 years, SET has been involved in high
accuracy applications such as the hybridization
of infrared focal plane arrays and the assembly
of optoelectronics components required for high
bandwidth telecommunication. Both applications
require placement within a micron or better.
Optoelectronics typically involves components
ranging from a few hundred microns in size to a few
millimetres, whereas the infrared focal plane arrays
can be as large as 100 millimetres. 3D integration
with high-density TSVs requires submicron [or
FC300 submicron high force die bonder
N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

Cross section of three chips stack
highly accurate] bonding, consistent with the
accuracy historically required by the IR FPA devices.
The primary difference between these two markets
is the need for much higher throughput; production
of IR FPAs may be limited to a few tens of devices/
day due to extremely long bonding times, while
consumer applications of 3D IC may require several
thousand bonds/hour. These high throughputs are
available on some production bonders, but not at
the accuracy or process conditions required by
most 3D bonding schemes. SET offers a tool for
submicron bonding on 300mm wafers, but with a
throughput of only a few hundred units/hour. SET
will continue to deliver a high accuracy tool for
3D development and lower volume applications,
concurrent to developing a tool with throughputs
to meet high volume consumer applications. While
many bonding schemes are being investigated
around the world for 3D devices, a clear winner
has not yet emerged and so process flexibility is
still a critical feature. Commercialization of 3D
integration is expected to begin perhaps as early
as 2012, with higher volume applications ramping
up after that.
Several tool designs to meet these market needs are
on the drawing boards at SET, always with an eye to
meeting the process and throughput requirements
of emerging market segments. As noted earlier in
temperatures and forces, is of great interest.
placement followed by collective bonding in a wafer
Populated wafer Courtesy of IMEC
this article, a 2-step approach with individual die
placement followed by global bonding captures the
best features of D2W and W2W bonding schemes;
this method is being characterized to identify best
practices for pre-attachment. While submicron
alignment and positioning of stages and bonding
arms will continue to occupy a significant portion
of the machine overhead, bonding materials and
processes which reduce the temperature and force
requirements will likely play a key role in increasing
the throughput for 3D applications. For this
reason, molecular bonding, performed at modest
Similarly, polymer bonding is under investigation
at IMEC, where SET is partnering with the institute
to develop 3D processes using accurate die
bonder.
www.set-sas.fr

3D Glass & Silicon Interposers

Myth, niche or high volume necessity?

MARKET TRENDS
These players, in search of growth opportunities, have positioned
as service providers for the back-end operations for the making of
through silicon vias (TSVs) and other related wafer-level assembly
operations, explains Jean-Marc Yannou, Project Manager at Yole
Dveloppement.Thanks to 3D glass / silicon interposers, they can
go one step further, and actually propose products combined with
their service offer.

KEY FEatuREs
Detailed account of all the application fields of 3D interposers
Drivers and expected benefits by application
Comparison with technology alternatives and likeliness
of 3D interposer penetration by application YOLE DVELOPPEMENT

Market trends and figures

Analysis of target cost structure for a few key applications
Supply chain analysis for the commercialization of 3D
interposers
Y O L E D V E L O P P E M E N T

contact us
For more information, feel free to contact David Jourdan: Y O L E D V E L O P P E M E N T

tel: +33 472 83 01 90, Email: jourdan@yole.fr

15
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

c o mp a ny v i s i o n

Reverse Costing : Analysis of Infineons eWLB

System Plus Consulting presents in exclusivity some extracts from their recent analysis
of the Fan-Out Wafer Level BGA package from Infineon.

T
he eWLB (enhanced Wafer Level BGA) is the Chip placement (pick and place equipment)
first Fan-Out BGA package available on the Wafer molding (epoxy)
market. De-bonding of carrier wafer

Package is adapted to the desired pitch, Redistribution layer:

independently of die size, lowering the constraints
on the PCB.
eWLB technology has been developed by Infineon,
and licensed to ASE, STATS ChipPAC and Nanium.
These last 2 companies are the first to propose this
technology using 300mm wafers.
This package is produced since 2009 and is used
in baseband SoCs: the Infineon X-GOLD 113 or
116 (GSM baseband) and 213 (EDGE baseband)
were among the first components to use this
packaging technology.
First dielectric coating and development
Copper deposition and pattern
Second dielectric coating and development
Ball drop, reflow and singulation:
Thin tin layer deposition
Ball dropping and reflow
Final test Large octagonal aluminum pads are used to
Dicing connect with the vias of the redistribution metal
layer. This is to prevent from misalignment due to
die shift issue during curing.

The CMOS process is standard up to passivation.

eWLB packaging technology has several Inside Technology

advantages over alternative approaches like fan-in
WLCSP or flipchip BGA: As can be seen from the X-ray picture, the die
A smaller footprint and a lower thickness than (darker area) is not centered in the package. The
BGA area ratio is around 2.5 for this 209 balls, 8x8 mm
A better reliability than small pitch fan-in CSP package with a 0.5mm pitch.
Lower thermal resistance
Possibility to have multiple dies in the same
package (SiP)
No substrate, so a simplified supply chain

Packaging process
The technology is based on a carrier on which the Cost analysis
dies are individually placed to form a reconstituted
wafer. The wafer is then molded and the carrier The cost analysis performed on this package
removed. One or 2 distribution layers are deposited showed that in 2010 the manufacturing cost is
before bumping and singulation. slightly higher than equivalent flip-chip BGA.

Wafer reconstitution and wafer molding: 3%

Lamination of adhesive film onto steel carrier
wafer Depreciation Cost
28%
Manufacturing Cost
47%
Labor Cost
In this first generation of eWLP, only one redistribution 22%
Yield Losses
layer is used to route the die pads to the package
balls.

16
N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

But there are several cost gains factors:

Improvement of packaging yield, a critical parameter for expensive
SoC dies
Removing of the temporary bonding step used to reduce the risk
or warping
Amortization of the specific equipments required by this process
Manufacturing on 300mm wafers

Simulations done with these scenarios provide very competitive

results.

With eWLB packaging technology in high volume production, the

manufacturers are preparing the next generation:
Integration of passive components
Multi-metal layer redistribution
Side by side dies
Reduced thickness

3D packaging with two-side redistribution and TMV is also being

SOLUTIONS FOR

MEMS
developed but the future yield of this approach is still difficult to
estimate.

The amounts invested by Nanium and STATS ChipPAC in production

lines and R&D for eWLB prove that this technology is already a

PROCESSES
serious alternative, with applications extending outside mobile phones
to many consumer products.

Michel Allain, System Plus Consulting

Lithography, spray coating,

top/bottom alignment

Nano imprint lithography and

hot embossing
Recent Reverse Costing Reports
Semisouth SiC JFET
3D integration and wafer level
- Physical Analysis of the Device
packaging
- Step by Step Reconstruction
of the Process Flow
- Cost of Manufacturing & Estimation
of Selling Price
Discera 8002 MEMS Oscillator
AKM AK8973S 3-Axis Compass
LEDs from Cree, Nichia, Lumileds, Acriche

System Plus Consulting develops Costing Tools and

performs on demand Reverse Costing studies of
Semiconductors (from Integrated Circuits to Power
Devices, from Single Chip Packages to MEMS and
MultiChip Modules) & of Electronic Boards and Systems.

Please contact System Plus Consulting:

www.systemplus.fr

17
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

c o mp a ny v i s i o n

Freescale Semiconductor answers

Yole Dveloppement questions about RCP
technology status
Yole Dveloppement had the pleasure to interview Navjot Chhabra, Redistributed Chip Packaging R&D and Operations
Manager, Packaging Solutions Development, Freescale Semiconductor.
Yole Dveloppement: Could you introduce our
readers about your recent announcement with
NEPES on 300mm RCP agreement? Could you
comment on the choice of NEPES as a key
strategic partner?
Navjot Chhabra: Freescale Semiconductor began
work on the RCP technology in 2003. In Q3 2006
Freescale made a decision to commercialize the
technology based on the maturity of its research and
development activity. Up to that point, most of the
R&D work was being done on an eight inch format
and was based on financial and capacity models
as market analysis. It was determined that a larger
format would be required to allow this technology to
be competitive, especially for consumer packages
and eventually multi-die systems. Ideally, a square/
rectangle format with panel sizes greater than
400- 500mm would be ideal, however Freescale
decided to move initially to a 300mm round format
to minimize tooling cost and customization. We felt it
was important to develop a fully automated tool set
with similar fab like technologies with an assembly
cost structure and yield expectations.
NC: We see a broad set of requirements for the RCP
Fan-out wafer level packaging technology. Interest
is coming from multiple customers and industries.
Having a 300mm platform can drive very low costs
in both small and large body sizes, with multiple
layers of redistribution allowing for a broad range
of integration schemes. For those customers
migrating to consumer based, flip-chip packages,
the RCP solution provides a compelling alternative.
A significant number of companies are evaluating
2D systems integrating between two to four die
along with a number of surface mounted devices
(SMDs). Where space constraints are critical, a
number of customers are designing and evaluating
3D RCP packages. What is exciting about this
technology is the level of flexibility it provides the
customer and ability to provide specific solutions.
Significant performance, size and flexibility is
gained with the ability to integrate sensors and other
Reliability, Configuration, Cellular Wireless
Components Products pplications
heterogeneous ICs. In most cases customers see
this technology as a way to differentiate themselves
from their competition.
YD: Infineon seems to experience a lot of
success in licensing its eWLB packaging
technology: could you explain what is the
main difference between eWLB and RCP from
a manufacturing stand-point? Is it an issue to
have multiple Fan-out Wafer-level-packaging
technologies co-existing on the worldwide
packaging IP landscape?
NC: The technologies are very similar in that the
customer will see a pin for pin compatible package.
The differences come in the features the technology
offers. In the table provided is list of attributes and
requirements customers are looking for with respect
to this technology. Clearly the entry point is to
Consumer
Networking
In Chassie In Dash Aerospace
Robotics Medical
electronics Automotive Automotive & Defense

Freescale picked Nepes for a number of reasons. Consumer level certification X X X X X

They continue to be very aggressive in serving Industrial level certification X X X X X X
a growing market. They bring to the table Automotive level certification X
complementary technology and capability with a
Medical level certification X
common goal of providing customers with new and
Single
enabling technology. Nepes has been providing Die FO-WLP
X X X X X
200mm Flip chip bumping services since 2000 in
2D Multi-die FO-WLP X X X X X X X X X
Korea and providing 300mm Flip chip bumping
< 6x6mm Package size
services in Singapore since 2005. Nepes was (as small as 2x2mm)
X X X
looking to extend their product offerings in the
6x6mm 13x13mm
wafer level packaging area with its high volume Package size
X X X X X X X X X
bumping production for 65nm/45nm devices (both
> 13x13mm Package size
leadfree and eutectic), WLCSP and the recent 50um (up to 40x40mm)
X X X X X X X

pitch micro bump. With well matched capabilities FO-WLP PoP X X X X

and a 300mm toolset, this turned out to be a win-
Stacked 3D Multi-die
win collaboration for both Freescale and Nepes to X X X X X
FO-WLP
commercialize the RCP technology and enable us to 3D Integrated FO-WLP X X X X X X X
penetrate both existing and new markets. 3D IC with 3D FO-WLP
X X X
integrated system
YD: Do you plan to license RCP to additional MEMS / Sensor Integration X X X X X X
companies in the month to come?
SMDs (Capacitors, Inductors,
X X X X X X X X
Oscillators, etc)
NC: We are not planning any additional
Memory (DDR, NVM, MRAM) X X X X X X X X
announcements related to licensing of RCP in the
next few months. We are very focused on getting 3D FO-WLP Photonic Module X X X

RCP fully transferred and qualified at Nepes. Over Radar X X X

the longer term, we absolutely desire to see RCP High Power / Thermal
X X X
proliferate in the industry. Management

Redistribution Layers 1 to 4 1 to 4 2 to 4 2 to 6 2 to 4 2 to 4 2 to 6 2 to 6 2 to 4
YD: What are the key motivations and Volumetric space sensitive X X X
applications driving the commercialization of
Fan-out Wafer-level-packages? Requirements and features by industry and application for Redistributed Chip Packaging technology (RCP)
(Courtesy of Freescale)

18
N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

support a single die Fan-out package however this
is only the beginning. To enable a game changing
solution for customers, we need to be able to provide
very flexible building blocks off the same fan-
out platform. The question will be how robust the
platform is to support these needs.
YD: What are the challenges to face for next
generation FO WLP based on multi-die, double-
side RDL, 3D vias and, eventually, based on
Panels?
NC: Freescale has made good progress in developing
and qualifying various RCP building blocks and
platforms to allow a diverse range of configurations
and applications to be realized. Overcoming the
challenges of processing on 300mm with multiple
layers of routing has put us in a good position to
develop a diverse range of integration schemes. We
are continuing to work with multiple customers to find
new ways to exploit this technology.
Listed below are some of the challenges we have
to solve. From a RCP technology perspective, we
have qualified to commercial and industrial levels.
Getting to multi-die systems (2D) require anywhere
from two to six RDL layers, which can also be done
in RCP without assembly, die drift, yield and warping
issues. Multi-die packages have new requirements
but mostly in developing the infrastructure to support in reliability and appear on larger packages with
this capability. Effort and activities are underway in increased layers of redistribution. Fortunately, we
developing these solutions. were able to resolve these by passing reliability with
good margin and capability.
Infrastructure development challenges:
- Supply chain and die management www.freescale.com
- System architecture
- 2D and 3D IC system design and electrical
modeling
- 2D and 3D package design and modeling Navjot Chhabra is currently
- Inline and end of line component and system heading Research and
testing Development as well as the
- Thermal management operations for Redistributed
- Yield management Chip Packaging technology
- Failure analysis within Packaging Solutions
Development at Freescale
For 3D systems the biggest challenges will be
Semiconductor. Navjot has held several
positions within Freescale /Motorola
reliability, system design and addressing yield and
including Strategy, Director of Interconnect at
testability challenges. With respect to the process International SEMATECH and key positions
technology, it does require a different level of in Manufacturing. Prior to Motorola, Navjot
sophistication to build these reliable structures but spent several years with Micron Technology
not insurmountable. working in process development, process and
device integration as well as manufacturing.
Lastly, Freescale made the decision early to migrate Navjot has been involved in the introduction
development and pilot production to a 300mm of several generations of Memory devices as
format to resolve any issues we may see moving well as the initial migrating to Cu interconnects
from our 200mm platform. As expected, we did see
and adoption of ultra low k dielectrics. Navjot
holds several patents in the area of process
significant challenges that we had not experienced
development and design.
at 200mm. A large number of those showed up

Infineon IFX-213 eWLB Package

The first reverse engineering analysis report of a Fan-Out Wafer Level Package !
The Infineon eWLB is a Wafer Level Package with a Fan-Out in CONSULTING Physical Analysis Methodology

order to increase the bump number and pitch. The IFX-213 in

eWLB package is directly assembled on a PCB, with a 0.5mm
pitch. One redistribution layer is used for this package.

KEY FEATURES
CONSULTING

This report provides a complete teardown including:

Detailed photos
Material analysis
Schematic assembly description
Manufacturing Process Flow
In-depth economical analysis
YOLE DVELOPPEMENT

Manufacturing cost breakdown

Selling price estimation
Y O L E D V E L O P P E M E N T

conTAcT US Analysis performed by Distributed by

For more information, feel free to contact David Jourdan,

CONSULTING Y O L E D V E L O P P E M E N T

Tel: +33 472 83 01 90, Email: jourdan@yole.fr

19
The Market Leader
in eWLB Technology
First in high volume
eWLB manufacturing with
best-in-class yields
First to offer 300mm
eWLB reconstituted wafer
manufacturing
Pioneering the development
of next-generation eWLB
To learn more about eWLB visit:
www.statschippac.com/eWLB
eWLB is a fan-out wafer
level packaging technology
that offers a small, thin,
high performance
semiconductor solution
for mobile phones and
consumer devices.
STATS ChipPAC is
leading the industry in
eWLB manufacturing and
innovative next-generation
technology such as:
multiple die side-by-side
super thin eWLB
two metal-layer
redistribution
larger body size and
higher I/O count
3D/PoP versions
N OVE M B ER 2 0 1 0 i s s u e n 1 7
c o mp a ny v i s i o n
Amkor talks 3D trends, looks to the future
Amkor Technology, headquartered in Chandler, Arizona, is among the worlds largest providers of contract
semiconductor assembly and test services.
Yole Dveloppement: Are any new trends
emerging in 3D packaging?
Terry Davis: Were seeing several trends emerging.
For starters, interconnect density is increasing. This
means a smaller bond pad pitch, stacked die that
require more interconnects in the same package
footprint, and the adoption of mixed interconnect
types, wirebond and flip chip, in the same package.
Reducing package thickness is another big trend
right now. This is being done with thinner wafers
and die, heightening the importance of thinning
methods for creating space for wirebonds such as
spacer films, as well as thin core substrates.
Another trend is shrinking footprint size while
maintaining or increasing I/O count. Were seeing
finer external ball pitch, with 0.4mm gaining wider
adoption and 0.3mm in development. Theres also
a push to increase the number of I/O rows.
Were also seeing custom external ball patterns
being used to optimize escape routing on
applications boards.
YD: Is an example of these custom external ball
patterns the A4 used in Apples iPad?
TD: Yes, a good example is the A4 processor used
in the iPad.
YD: What are the biggest challenges that remain
for 3D packaging? Any not-so-obvious ones?
TD: Package warpage is still a key concern, with
the drive to a thinner package height. This requires
thinned wafer/die, a thin mold cap, and a thin
substrate core.
The electrical and thermal performance of the
system are more heavily influenced by package
performance as more functionality is transferred to
fewer packages by making use of 3D-type package
structures. Before you can solve a problem, you
need to first understand it, and Amkor has extensive
electrical, thermal, and mechanical modeling and
testing capabilities.
Historically, multi-die packages have used die from
the same sources such as memory stacks. As 3D
packaging expands, we can expect die from multiple
sources to be packaged together. Well see various
die designed for optimum connection within a single
package. This will be even more critical for TSV and
designs where two die are connected by flip chip.
YD: How is demand for 3D packages compared
to more traditional packages?
TD: Handheld applications like smartphones and
tablets are driving higher levels of integration.
YD: Any comments on the A4 processor in
some handheld tablets?
TD: The A4 processor is the bottom package in a
package-on-package (PoP) configuration, with the
top package housing two memory die. The benefits
include reduced footprint, improved communication
between application processor and memory, and
the ability to package and test the application
processor separately from the memory to reduce
yield stack-up.
Again, using handheld tablets as an example, the
flash memory is in 64GB LGA packages, where
four die are stacked in each package. Memory-type
devices have been the early adopters of 3D-type
packaging.
YD: How is Amkor differentiating itself with 3D?
TD: Amkor recognized the drive toward 3D-type
packaging early on, and our TMV (through-mold
via) PoP, Stacked CSP, and FlipStack CSP (Figure
1) are clearly aimed at 3D packaging requirements.
We also recently announced our fine pitch copper
(Courtesy of Amkor)
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
Copper pillar bumps (Courtesy of Amkor)
pillar flip chip technology platform (Figure 2), which
will enable fine-pitch 3D interconnects well into the
future.
Amkor has relationships with leading foundries,
which enables us to collaborate on reliability
studies with advanced silicon nodes to ensure
silicon/packaging interactions are addressed for
applications like 3D packaging, where fragile, low-k
dielectrics create challenges due to the thin, high-
density structures and interconnect technologies.
YD: What role will industry collaboration play in
the future of 3D packaging?
TD: Collaboration is a key element in both translating
requirements and reducing time to market. For
example, we worked with Nokia and ST to qualify
our TMV PoP package. All parties benefited from
this collaboration, which resulted in reduced time
to market and increased sales, thanks to a short
qualification time.
We also recently collaborated with TI on our fine-
pitch copper pillar flip chipshrinking bump pitch
up to 300% compared to current solder bump flip
chip technology.
YD: Whats next for 3D packaging? Any trends
we should watch for during the next 5 years?
TD: Amkor expects to see increased stacked
die counts for memory applications. In wafer-
level packages, we also expect to see various
configurations of stacked die and stacked package
with TMV as an enabling technology. Were also
expecting more hybrid packages, in the form
of wafer-level packages stacked with laminate
packages. And as far as TSVs, its still a question of
whether itll be via first, middle, or last.
www.amkor.com
Terry W. Davis, Amkor
Technologys senior director of
technical marketing
Davis currently serves as
Amkors senior director of
technical marketing, and
previously developed and managed their
MicroLeadFrame package family.
21
 N OVE M B ER 2 0 1 0 i s s u e n 1 7
A N AL Y ST C OR N ER
Packaging power semiconductors the next big thing?
As demand for power semiconductors heats up, Yole analyst Jean-Marc Yannou provides a backgrounder
on their evolution and packaging requirements.
At the recent IMAPS France chapters power
packaging conference, held in Tours on November
18, presenters from application fields ranging from
aerospace to military to transportation gathered
to discuss the latest trends and solutions. And its
worth noting just how surprisingly standardized their
solutions seem to be.
As of now, there are very few substrate suppliers
and no standard supply chain. Original equipment
manufacturers (OEMs) package their power
semiconductor devices themselves or count on
integrated device manufacturers (IDMs) to do it for
them. But the outsourced semiconductor assembly
and test (OSAT) companies are now taking to the
power semiconductor business, seeing a great
deal of potential down the road. And even though
the supply chain varies greatly from one player to
another, especially from one application to another,
they are all following the same innovation pace and
track and solutions as they emergewhich is quite
remarkable.
Demand for power semiconductor packaging is
increasing and likely to become a very significant
business in the future, so its a good time to talk
about the evolution of power semiconductors and
their packaging requirements.
Power semiconductors
First, lets look at power semiconductors. What
are they? Essentially power semiconductors
involve energy management controlled by on/off
transistors. Electronics for this energy management
22
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
are used for electrical engines and Power semiconductors typically
energy conversion, and especially for fall within the wide range of 5W to
photovoltaic inverters. The applications hundreds of kW, and silicon is the
for power semiconductors include most common material used in the
electric trains and tramways, as well as transistors because its still cheaper
aerospace and automotive applications, than many of the other emerging
audio amplifiers for consumer solutions.
applications, photovoltaic inverters, and
electrical vehicles or hybrids, etc. Most of the emerging technologies
Jean-Marc Yannou, work much better at higher
Project Manager,
There are two big issues with power temperatures than silicon, up to
Advanced Packaging,
semiconductors. They must carry high WLP & 3D system 250C. Since internal heat generation
current, and the result of high currents Integration, is a problem, it can be tempting to
and voltages transiting through Yole Dveloppement replace silicon by the compound
electronic appliances is the generation semiconductors to avoid the need for
of a lot of heat that then must be extracted. High cooling systems, which are also very expensive.
current and temperature are driving all of the
innovation in this field. Packaging power semiconductors
The transistors themselves can be made of silicon; The main issues for packaging power
a MOSFET. You can make different types of semiconductors are high currents and high
transistors, such as isolated gate bipolar transistors temperatures. Measures must be taken to counter
(IGBTs). And for even higher power applications, we these issues, such as specific die attach materials,
find compound semiconductors, with silicon carbide heat spreaders, insulators, specific interconnects,
or gallium nitride. These are the semiconductors and cooling gels.
with larger bandgaps that are being used in
The internal transistor temperatures, known as
emerging technologies for the higher-power range
junction temperatures, can rise up to 250C
of power applications.
and even reach as high as 300C. The best
According to Yole Dveloppement, outsourced semiconductor
assembly and test (OSAT) companies are now taking
to the power semiconductor business, seeing a great deal
of potential down the road
DBC package structure for power semiconductors (Yole Dveloppement - Nov. 2010)
N OVE M B ER 2 0 1 0 i s s u e n 1 7
way to manage the temperature issue of power
semiconductors can often be found in packaging
materials.
When you look at most ICs for consumer
applications, theyre being overloaded with
epoxy resins. These epoxy resins are limited to
operating temperatures of 200C. For higher-power
applications, overmoldings are no longer used.
Then you need a specific substrate as well, because
the standard organic substrates have the same
issue: theyre epoxy-based.
The most common one is the direct-bond copper
(DBC) substrate. It uses a ceramic-based substrate
either made of aluminum nitride or silicon nitride,
with copper foils on both sides. This ceramic
substrate is a good thermal conductor, which helps
with heat extraction. Copper is also a good heat
extractor.
The transistors, silicon MOSFETs, IGBTs, GaN, or
SiC, are attached on the overlying copper foil. The
whole device is encapsulated and then signals exit
the upper face of the device.
Substrates
Its not at all easy to find companies who provide
substrates for power semiconductors. The
substrates are quite difficult to produce and there
is a lot of secrecy surrounding which companies
produce them and for whom. Its rumored that there
will only be three providers of the nitride-based
substrates worldwide, because it requires knowing
how to place copper on the nitride substrates.
Thermal dissipation
The goal is to dissipate/extract heat off the
semiconductor junction, through the semiconductor
material to extract it from the package. Silicon isnt
as good a thermal dissipater as ceramic, and not
even close to copper. So when using silicon wafers,
they need to be thinned down to below 100m.
Actually, all of the high-powered transistors need
to be thinner than 100mand only to combat
thermal dissipation issues.
Die attach materials
ICs need to be attached to the substrates using die
attach materials. The material of choice in most
semiconductor packaging is usually glue, so for power
semiconductor devices in the past thermal conductive
glues with a high metal content were used.
Ribbon bonding interconnections
(Courtesy of ST Microelectronics)
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s
The limited number of substrate suppliers for power
semiconductors and lack of a supply chain, however, are
challenges that need to be overcome,
explains Jean-Marc Yannou, Yole Developpement
Since they needed even higher thermal conductivity, the semiconductor device to bring the signal to the
the industry continued to load more metal particles top. The downside is used for grounding and heat
into the latest glues to the point where the latest extraction.
ones are 80% silver; they barely contain glue
anymore.
The latest step in the evolution of die attach
materials is using pure silver. One issue is that it
has a high melting point. Thats why recent R&D
involves silver powder with some chemical agents
to help it be sintered at low temperatures using low
Power module with parallel wide bond
temperature sintering technology.
interconnections
The next step will likely be nanoparticles, which are
still in the R&D stage.
A driver for using copper pillars is that wire bonds or
Interconnects ribbon bonds create some intermetallic compounds
For consumer electronics the most common (IMCs), but these are interface alloys between
interconnections are wire bonds, although bumping the interconnection itself and the pads on the
interconnects are becoming common for flip chip semiconductor device. There are conductivity and
devices. Both are used in power applications. reliability issues with wire bonds, including cracking.
The two issues of high current and high temperature
are a problem because interconnects must be Future of packaging power
able to drive enough current density, and the high semiconductors
temperatures are an issue of interconnect reliability.
The future of packaging power semiconductors
To drive more current density than in the past, looks very bright. A lot of industry momentum
instead of using one wire bond per pad, multiple is starting to ratchet up the pace of evolution of
wires are being used, as well as a larger-diameter power semiconductor technologies and, as a
wire bond. For consumer electronics, the most consequence, packaging for these devices.
common wire bonds are made of gold. But there are
serious cost issues involved and its difficult to make The limited number of substrate suppliers for
large-diameter gold wire bonds. Now, aluminum, power semiconductors and lack of a supply chain,
which can be grown in large diameters, is usually however, are challenges that need to be overcome.
substituted for gold.
However, standardized technical solutions are
After the arrays for wire bonding, the industry emerging which will allow at their turn an outsourcing
began using ribbon bonding. It uses the exact same of assembly and packaging services of power
principle as wire bonding and the same equipment. semiconductors as they keep on growing.
But instead of putting a round-shaped wire they use
a rectangular-shaped wire, referred to as a ribbon,
which is much larger and capable of driving much
higher current density.
There are other interconnects being used, such as
Sintering for die attach, in production at Semikron
clip bonding, which is when a MOSFET transistor
(Yole Dveloppement - Nov. 2010)
is sandwiched between its copper foil and another
copper foil, with attachment material on both sides
of the device.
Jean-Marc Yannou joined Yole Developpement
And the reason for so many different technologies as technology and market expert in the fields of
for interconnects is that we need to drive high advanced packaging and system integration. He
current, but also reduce the excess resistance to has 15-years of experience in the semiconductor
the transistors. industry. He worked for Texas Instruments and
Philips (then NXP semiconductors) where he
Copper pillars served as Innovation Manager for System-in-
Package technologies. He is also the President
Copper pillars are an attractive option for power
of IMAPS (International Microelectronics And
semiconductors, but contrary to how theyre used
Packaging Society) in France.
in flip chips, they would be placed on the topside of
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 N OVE M B ER 2 0 1 0 i s s u e n 1 7
Newsletter on 3 D I C , TSV , WLP & E m b e d d e d T e c h n o l o g i e s

Embedded Wafer-Level-Packages
Fan-out WLP / Chip Embedding in Substrate
Be ready for the next generation of IC packaging & substrate assembly waves!
MARKET TRENDS
Embedded wafer-level-packaging technology is not new at all. Key
benefits of the technology include miniaturization, improvement of 3DIC
3-D WLP
with
electrical and thermal performance, cost reduction and simplification tSV Flip-Chip
of logistic for OEMs MEMS

Things are moving really fast at the moment as this year, we see both
Fan-Out wafer level packaging and chip embeddeding into PCB
Fan-out
laminate package infrastructures emerging at the same time, ramping WLP
Package
to high volume production IPDs

PCB
KEY FEatuRES
Both Fan-Out WLP and Chip embedded package technologies
analyzed
Key market drivers, benefits and challenges application by
application
Market trends & figures with detailed breakdown by application
Description of the complete manufacturing tool-box for embedded YOLE DVELOPPEMENT

wafer level packaging

Analysis of several embedded package target prices for a few key
applications 300mm eWLB reconfigured wafer

Supply chain perspectives, key players and emerging infrastructure (Courtesy of NANIUM / Infineon).

for embedded packaging Y O L E D V E L O P P E M E N T

ContaCt uS
For more information, feel free to contact David Jourdan: Y O L E D V E L O P P E M E N T

tel: +33 472 83 01 90, Email: jourdan@yole.fr

About Yole Dveloppement

Beginning in 1998 with Yole Dveloppement, we have grown to become a group of companies providing market research, technology analysis,
strategy consulting, media in addition to finance services. With a solid focus on emerging applications using silicon and/or micro manufacturing Yole
Dveloppement group has expanded to include more than 40 associates worldwide covering MEMS and Microfluidics, Advanced Packaging, Compound
Semiconductors, Power Electronics, LED, and Photovoltaic. The group supports companies, investors and R&D organizations worldwide to help them
understand markets and follow technology trends to develop their business.

SERVICES PUBLICATIONS
Market data, market research and marketing analysis Collection of market & technology reports
Technology analysis Players & market databases
Reverse engineering and reverse costing Manufacturing cost simulation tools
Strategy consulting Component reverse engineering & costing analysis
Corporate Finance Advisory (M&A and fund raising) More information on www.yole.fr
MEDIA
Critical news, Bi-weekly: Micronews, the magazine
In-depth analysis & Quarterly Technology Magazines: MEMS Trends 3D Packaging PV Manufacturing EfficienSi
Online disruptive technologies website: www.i-micronews.com
Exclusive Webcasts
Live event with Market Briefings
CONTACTS
For more information about :
Services : Jean-Christophe Eloy (eloy@yole.fr)
Publications: David Jourdan (jourdan@yole.fr)
Media : Sandrine Leroy (leroy@yole.fr)

Editorial Staff
Managing Editor: Jean-Christophe Eloy - Editor in chief: Dr Eric Mounier
Editors: Jrme Baron, Jean-Marc Yannou, Sally Cole Johnson, Dr. Phil Garrou
PR & Media Manager: Sandrine Leroy - Assistant: Camille Favre - Production: atelier JBBOX

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