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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FQP8P10 P-Channel MOSFET

FQP8P10 P -Channel QFET ® MOSFET - 10 0 V, - 8 A, 53 0
FQP8P10 P -Channel QFET ® MOSFET - 10 0 V, - 8 A, 53 0

FQP8P10

P-Channel QFET ® MOSFET

-100 V, -8 A, 530 mΩ

P -Channel QFET ® MOSFET - 10 0 V, - 8 A, 53 0 m Ω
March 2013
March 2013

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ® ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

-8 A, -100 V, R DS(on) =530 mΩ(Max.) @V GS =-10 V, I D =-4 A

• Low Gate Charge (Typ. 12 nC)

• Low Crss (Typ. 30 pF)

• 100% Avalanche Tested

175°C Maximum Junction Temperature Rating

G D S TO-220
G D S
TO-220

Absolute Maximum Ratings

T C = 25°C unless otherwise noted

G

D

Maximum Ratings T C = 25°C unless otherwise noted G D S   Symbol   Parameter

S

 

Symbol

 

Parameter

FQP8P10

Unit

V DSS

Drain-Source Voltage

 

-100

V

I

D

Drain Current

- Continuous (T C = 25°C)

-8.0

A

 

- Continuous (T C = 100°C)

-5.7

A

I

DM

Drain Current

- Pulsed

(Note 1)

-32

A

V GSS

Gate-Source Voltage

 

± 30

V

E AS

Single Pulsed Avalanche Energy

(Note 2)

150

mJ

I

AR

Avalanche Current

(Note 1)

-8.0

A

E AR

Repetitive Avalanche Energy

(Note 1)

6.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

-6.0

V/ns

P D

Power Dissipation (T C = 25°C)

 

65

W

 

- Derate above 25°C

0.43

W/°C

T J , T STG

Operating and Storage Temperature Range

 

-55 to +175

°C

T L

Maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds

300

°C

Thermal Characteristics

 
 

Symbol

 

Parameter

Typ

Max

Unit

R θJC

Thermal Resistance, Junction-to-Case

 

--

2.31

°C/W

R θCS

Thermal Resistance, Case-to-Sink

 

0.5

--

°C/W

R θJA

Thermal Resistance, Junction-to-Ambient

 

--

62.5

°C/W

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

FQP8P10 P-Channel MOSFET

Electrical Characteristics

T C = 25°C unless otherwise noted

Symbol

Parameter

 

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

 

BV DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, I D = -250 µA

-100

--

--

V

BV DSS

Breakdown Voltage Temperature Coefficient

I D = -250 µA, Referenced to 25°C

--

-0.1

--

V/°C

/

T J

I

DSS

Zero Gate Voltage Drain Current

V

DS = -100 V, V GS = 0 V

--

--

-1

µA

 

V

DS = -80 V, T C = 150°C

--

--

-10

µA

I

GSSF

Gate-Body Leakage Current, Forward

V

GS = -30 V, V DS = 0 V

--

--

-100

nA

I

GSSR

Gate-Body Leakage Current, Reverse

V

GS = 30 V, V DS = 0 V

--

--

100

nA

On Characteristics

 

V

GS(th)

Gate Threshold Voltage

V

DS = V GS , I D = -250 µA

-2.0

--

-4.0

V

R

DS(on)

Static Drain-Source

V

GS = -10 V, I D = -4.0 A

   

0.41

0.53

 

On-Resistance

--

g

FS

Forward Transconductance

V

DS = -40 V, I D = -4.0 A

(Note 4)

--

4.3

--

S

Dynamic Characteristics

 

C

iss

Input Capacitance

V

DS = -25 V, V GS = 0 V,

--

360

470

pF

C

oss

Output Capacitance

f

= 1.0 MHz

 

--

120

155

pF

C

rss

Reverse Transfer Capacitance

 

--

30

40

pF

Switching Characteristics

 

t

d(on)

Turn-On Delay Time

V

DD = -50 V, I D = -8.0 A,

G = 25

 

--

11

30

ns

t

r

Turn-On Rise Time

R

--

110

230

ns

           

t

d(off)

Turn-Off Delay Time

 

--

20

50

ns

t

f

Turn-Off Fall Time

 

(Note 4, 5)

--

35

80

ns

Q

g

Total Gate Charge

V

DS = -80 V, I D = -8.0 A,

--

12

15

nC

Q

gs

Gate-Source Charge

V

GS = -10 V

--

3.0

--

nC

Q

gd

Gate-Drain Charge

 

(Note 4, 5)

--

6.4

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

 

I

S

Maximum Continuous Drain-Source Diode Forward Current

 

--

--

-8.0

A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current

 

--

--

-32

A

V

SD

Drain-Source Diode Forward Voltage

V

GS = 0 V, I S = -8.0 A

--

--

-4.0

V

t

rr

Reverse Recovery Time

V

GS = 0 V, I S = -8.0 A,

--

98

--

ns

Q

rr

Reverse Recovery Charge

dI

F / dt = 100 A/µs

(Note 4)

--

0.35

--

µC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 3.5mH, I AS = -8.0A, V DD = -25V, R G = 25 Ω, Starting T J = 25°C

3. I SD -8.0A, di/dt 300A/µs, V DD BV DSS, Starting T J = 25°C

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

FQP8P10 P-Channel MOSFET

Typical Characteristics

V GS Top : -15.0 V 1 -10.0 V 10 -8.0 V -7.0 V -6.5
V GS
Top :
-15.0 V
1
-10.0 V
10
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
0
Bottom :
-4.5 V
10
-1
10
※ Notes :
1.
250μ s Pulse Test
2.
T
25℃
C =
-2
10
10 -1
10 0
10 1
-I D , Drain Current [A]

-V DS , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

1.5 V GS = - 10V 1.2 0.9 V GS = - 20V 0.6 0.3
1.5
V GS = - 10V
1.2
0.9
V GS = - 20V
0.6
0.3
※ Note : T J = 25℃
0.0
0
5
10
15
20
25
[ Ω],
R DS(on)
Drain-Source On-Resistance

-I D , Drain Current [A]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

900 C = C gs + C gd (C ds = shorted) iss C 800
900
C
=
C
gs + C gd (C ds = shorted)
iss
C
800
oss = C ds + C gd
C
=
C
C
rss
gd
oss
700
C
iss
600
※ Notes :
1. V GS = 0 V
500
2. f = 1 MHz
400
C
rss
300
200
100
0
10 -1
10 0
10 1
Capacitance [pF]

-V DS , Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

1 10 175℃ 0 10 25℃ -55 ℃ ※ Notes : 1. V DS =
1
10
175℃
0
10
25℃
-55
Notes :
1. V DS = -40V
2. 250μ s Pulse Test
-1
10
2
4
6
8
10
-I D , Drain Current [A]

-V GS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

1 10 0 10 175℃ 25℃ ※ Notes : 1. V GS = 0V 2.
1
10
0
10
175℃
25℃
Notes :
1. V GS = 0V
2. 250μ s Pulse Test
-1
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-I DR , Reverse Drain Current [A]

-V SD , Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

12 V DS = -20V 10 V DS = -50V V DS = -80V 8
12
V DS = -20V
10
V DS = -50V
V DS = -80V
8
6
4
2
※ Note : I D = -8.0 A
0
0
2
4
6
8
10
12
14
-V GS , Gate-Source Voltage [V]

Q G , Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

FQP8P10 P-Channel MOSFET

Typical Characteristics

(Continued)

1.2 1.1 1.0 0.9 ※ Notes : 1. V GS = 0V 2. I D
1.2
1.1
1.0
0.9
※ Notes
:
1. V GS = 0V
2. I D = -250 μ A
0.8
-100
-50
0
50
100
150
200
-BV DSS Breakdown
, (Normalized)
Drain-Source
Voltage

T J , Junction Temperature [ o C]

Figure 7. Breakdown Voltage Variation vs. Temperature

2 10 Operation in This Area is Limited by R DS(on) 100 µs 1 ms
2
10
Operation in This Area
is
Limited by R DS(on)
100 µs
1 ms
1
10
10
ms
DC
0
10
Notes
:
1. T C
=
25
o C
2. T J =
175
o C
3. Single Pulse
-1
10
10 0
10 1
10 2
-I D , Drain Current [A]

-V DS , Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 1. V GS = -10 V
3.0
2.5
2.0
1.5
1.0
※ Notes :
0.5
1. V GS = -10 V
2. I D
= -4.0 A
0.0
-100
-50
0
50
100
150
200
R DS(ON) , (Normalized)
Drain-Source On-Resistance

T J , Junction Temperature [ o C]

Figure 8. On-Resistance Variation vs. Temperature

10 8 6 4 2 0 25 50 75 100 125 150 175 -I D
10
8
6
4
2
0
25
50
75
100
125
150
175
-I D , Drain Current [A]

T C , Case Temperature []

Figure 10. Maximum Drain Current vs. Case Temperature

D =0.5 1 0 0 ※ N otes : 0.2 1. J C (t) Z
D =0.5
1 0 0
N otes
:
0.2
1. J C (t)
Z
=
2.31
/W
M ax.
θ
2. actor,
D
uty
F
D
=t 1 /t 2
0.1
T
-
T
=
P
*
Z
J C (t)
3. J M
C
D
M
θ
0.05
1 0 -1
0.02
P
DM
0.01
t
1
single
pulse
t
2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
,
S q u are
W ave
P u lse D ura tion
[sec]
t 1
Z θ
T herm al R esponse
J (t),
C

Figure 11. Transient Thermal Response Curve

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

FQP8P10 P-Channel MOSFET

Gate Charge Test Circuit & Waveform V V GS GS Same Type Same Type 50KΩ
Gate Charge Test Circuit & Waveform
V V
GS
GS
Same Type
Same Type
50KΩ
50KΩ
as DUT
as DUT
Q Q
g g
12V
12V
200nF
200nF
-10V
-10V
300nF
300nF
V V
V V
DS
DS
GS
GS
Q Q
Q Q
gs gs
gd
gd
DUT
DUT
-3mA
-3mA
Charge
Charge
Resistive Switching Test Circuit & Waveforms
R R
L L
V V
DS DS
t t on
on
t t off
off
t
t
V V
t t r r
t d(on)
d(on)
t d(off)
d(off)
t t
V V
DD
DD
f f
GS
GS
V V
R R
GS
GS
G G
10%
10%
DUT
DUT
-10V
-10V
90%
90%
V V
DS
DS
Unclamped Inductive Switching Test Circuit & Waveforms
BV
LL L
1 1 1 1
BV DSS
DSS
E E
= =
---- ----
----
----
LI LI
LI
2 2
-------------------- --------------------
V V
E AS =
AS
AS
AS
AS
AS 2
DS
DS
2
2
2 2
BV
- V
BV DSS - V DD
DSS
DD
t t p p
Time
Time
I I I D
D D
V V
V DS (t)
V
(t)
R R
DD
DD
DS
G G
V V
DD
DD
I I D (t)
(t)
D
-10V
-10V
DUT
DUT
I I
AS
AS
t t p p
BV
BV
DSS
DSS

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

FQP8P10 P-Channel MOSFET

( (

Peak Diode Recovery dv/dt Test Circuit & Waveforms + + V V DS DS DUT
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+ +
V V
DS
DS
DUT
DUT
_ _
I
I SD
SD
LL L
Driver
Driver
R R
G G
Compliment of DUT
Compliment of DUT
V V
(N-Channel)
(N-Channel)
DD
DD
V V
GS
GS
• dv/dt controlled by R G
dv/dt controlled by R
G
• •
I
I SD controlled by pulse period
controlled by pulse period
SD
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
V V
D D
D
= = = -------------------------- -------------------------- --------------------------
GS
GS
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
10V 10V
Driver )
Driver )
Body Diode Reverse Current
Body Diode Reverse Current
I
I SD
SD
I I
( (
DUT )
DUT )
RM
RM
di/dt
di/dt
I I FM , Body Diode Forward Current
, Body Diode Forward Current
FM
V V
V V
DS
DS
SD
SD
( (
DUT )
DUT )
Body Diode
Body Diode
V V
DD
DD
Forward Voltage Drop
Forward Voltage Drop
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

FQP8P10 P-Channel MOSFET

Mechanical Dimensions

TO-220

Mechanical Dimensions TO-220 Dimensions in Millimeters

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

FQP8P10 P-Channel MOSFET

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

2Cool™

FPS™ F-PFS™ FRFET ® Global Power Resource SM Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax ™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™

Sync-Lock™

AccuPower™ AX-CAP ® * BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT ™ CTL™ Current Transfer Logic™ DEUXPEED ® Dual Cool™ EcoSPARK ® EfficentMax™ ESBC™

® ®* PowerTrench ® PowerXS™ TinyBoost™ Programmable Active Droop™ TinyBuck™ ® QFET TinyCalc™ QS™
®
®*
PowerTrench ®
PowerXS™
TinyBoost™
Programmable Active Droop™
TinyBuck™
®
QFET
TinyCalc™
QS™
®
TinyLogic
Quiet Series™
TINYOPTO™
RapidConfigure™
TinyPower™
TinyPWM™
TinyWire™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM ®
STEALTH™
SuperFET ®
®
TranSiC
TriFault Detect™
TRUECURRENT ® *
μSerDes™
UHC ®
Ultra FRFET™
MotionMax™
SuperSOT™-3
UniFET™
mWSaver™
SuperSOT™-6
VCX™
OptoHiT™
SuperSOT™-8
®
VisualMax™
OPTOLOGIC ®
SupreMOS
VoltagePlus™
OPTOPLANAR ®
SyncFET™
XS™
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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I64

©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0

www.fairchildsemi.com

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