PD - 94613A

SMPS IGBT IRGB20B60PD1

WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Applications VCE(on) typ. = 2.05V
Telecom and Server SMPS @ VGE = 15V IC = 13.0A
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies Equivalent MOSFET
G
Parameters
Features RCE(on) typ. = 158m
E
NPT Technology, Positive Temperature Coefficient ID (FET equivalent) = 20A
Lower VCE(SAT) n-channel
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability

Benefits E
Parallel Operation for Higher Current Applications C
G
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25C Continuous Collector Current 40
IC @ TC = 100C Continuous Collector Current 22
ICM Pulse Collector Current (Ref. Fig. C.T.4) 80
ILM Clamped Inductive Load Current d 80 A
IF @ TC = 25C Diode Continous Forward Current 10
IF @ TC = 100C Diode Continous Forward Current 4
IFRM Maximum Repetitive Forward Current e 16
VGE Gate-to-Emitter Voltage 20 V
PD @ TC = 25C Maximum Power Dissipation 215 W
PD @ TC = 100C Maximum Power Dissipation 86
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm)

Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.58 C/W
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) 5.0
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) 80
Weight 2 (0.07) g (oz)

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IRGB20B60PD1
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 500A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.32 V/C VGE = 0V, IC = 1mA (25C-125C)
RG Internal Gate Resistance 4.3 1MHz, Open Collector
2.05 2.35 IC = 13A, VGE = 15V 4, 5,6,8,9
VCE(on) Collector-to-Emitter Saturation Voltage 2.50 2.80 V IC = 20A, VGE = 15V
2.65 3.00 IC = 13A, VGE = 15V, TJ = 125C
3.30 3.70 IC = 20A, VGE = 15V, TJ = 125C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250A 7,8,9
VGE(th)/TJ Threshold Voltage temp. coefficient -11 mV/C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance 19 S VCE = 50V, IC = 40A, PW = 80s
ICES Collector-to-Emitter Leakage Current 1.0 250 A VGE = 0V, VCE = 600V
0.1 mA VGE = 0V, VCE = 600V, TJ = 125C
VFM Diode Forward Voltage Drop 1.5 1.8 V IF = 4.0A, VGE = 0V 10

1.4 1.7 IF = 4.0A, VGE = 0V, TJ = 125C

IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V, VCE = 0V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) 68 102 IC = 13A 17
Qgc Gate-to-Collector Charge (turn-on) 24 36 nC VCC = 400V CT1

Qge Gate-to-Emitter Charge (turn-on) 10 15 VGE = 15V

Eon Turn-On Switching Loss 95 140 IC = 13A, VCC = 390V CT3

Eoff Turn-Off Switching Loss 100 145 J VGE = +15V, RG = 10, L = 200H
Etotal Total Switching Loss 195 285 TJ = 25C f
td(on) Turn-On delay time 20 26 IC = 13A, VCC = 390V CT3
tr Rise time 5.0 7.0 ns VGE = +15V, RG = 10, L = 200H
td(off) Turn-Off delay time 115 135 TJ = 25C f
tf Fall time 6.0 8.0
Eon Turn-On Switching Loss 165 215 IC = 13A, VCC = 390V CT3
Eoff Turn-Off Switching Loss 150 195 J VGE = +15V, RG = 10, L = 200H 11,13

Etotal Total Switching Loss 315 410 TJ = 125C f WF1,WF2

td(on) Turn-On delay time 19 25 IC = 13A, VCC = 390V CT3

tr Rise time 6.0 8.0 ns VGE = +15V, RG = 10, L = 200H 12,14

td(off) Turn-Off delay time 125 140 TJ = 125C f WF1,WF2

tf Fall time 13 17
Cies Input Capacitance 1560 VGE = 0V 16

Coes Output Capacitance 95 VCC = 30V

Cres Reverse Transfer Capacitance 20 pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related) g 83 VGE = 0V, VCE = 0V to 480V 15
Coes eff. (ER) Effective Output Capacitance (Energy Related) g 61
TJ = 150C, IC = 80A 3

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time 28 42 ns TJ = 25C IF = 4.0A, VR = 200V, 19

38 57 TJ = 125C di/dt = 200A/s

Qrr Diode Reverse Recovery Charge 40 60 nC TJ = 25C IF = 4.0A, VR = 200V, 21

70 105 TJ = 125C di/dt = 200A/s

Irr Peak Reverse Recovery Current 2.9 5.2 A TJ = 25C IF = 4.0A, VR = 200V, 19,20,21,22

3.7 6.7 TJ = 125C di/dt = 200A/s CT5

Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28H, RG = 22.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.

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 IRGB20B60PD1
45 250

40

35 200

30
150

Ptot (W)
25
IC (A)

20
100
15

10 50
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (C) T C (C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
100 40
VGE = 15V
35
VGE = 12V
30 VGE = 10V
VGE = 8.0V
10
25 VGE = 6.0V
ICE (A)
IC A)

20

15
1
10

0 0
10 100 1000 0 1 2 3 4 5 6

VCE (V) VCE (V)

Fig. 3 - Reverse Bias SOA Fig. 4 - Typ. IGBT Output Characteristics

TJ = 150C; VGE =15V TJ = -40C; tp = 80s
40 40
VGE = 15V VGE = 18V
35 35
VGE = 12V VGE = 15V
VGE = 10V 30 VGE = 12V
30
VGE = 8.0V VGE = 10V
VGE = 6.0V VGE = 8.0V
25 25
ICE (A)
ICE (A)

20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE (V) VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25C; tp = 80s TJ = 125C; tp = 80s

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IRGB20B60PD1
450 10

400 9

350 8
ICE = 20A
T J = 25C 7
300 ICE = 13A
TJ = 125C
6 ICE = 8.0A

VCE (V)
250
ICE (A)

5
200
4
150
3
100 2
50 1

0 0
0 5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)
Fig. 7 - Typ. Transfer Characteristics Fig. 8 - Typical VCE vs. VGE
VCE = 50V; tp = 10s TJ = 25C
10 100

Instantaneous Forward Current - IF (A)

9

8 ICE = 20A
7 ICE = 13A
TJ = 150C
ICE = 8.0A 10
6 TJ = 125C
VCE (V)

T = 25C
5 J

3 1

0
0.1
0 5 10 15 20 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forward Voltage Drop - V FM(V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typ. Diode Forward Characteristics
TJ = 125C tp = 80s
350 1000

300
EON tdOFF
250
Swiching Time (ns)

100
Energy (J)

200
EOFF tdON
150
tF
10
100
tR
50

0 1
0 5 10 15 20 25 0 5 10 15 20 25

IC (A) IC (A)

Fig. 11 - Typ. Energy Loss vs. IC Fig. 12 - Typ. Switching Time vs. IC
TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V. TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V.
Diode clamp used: 8ETH06 (See C.T.3) Diode clamp used: 8ETH06 (See C.T.3)

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 IRGB20B60PD1
250 1000

td OFF
EON

200

Swiching Time (ns)

100
Energy (J)

EOFF tdON
150

10 tF
100
tR

50 1
0 5 10 15 20 25 30 35 0 10 20 30 40

RG ( ) RG ( )

Fig. 13 - Typ. Energy Loss vs. RG Fig. 14 - Typ. Switching Time vs. RG
TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V
Diode clamp used: 8ETH06 (See C.T.3) Diode clamp used: 8ETH06 (See C.T.3)

12 10000

10
Cies
8
Capacitance (pF)

1000
Eoes (J)

Coes
4 100

2
Cres

0 10
0 100 200 300 400 500 600 700 0 20 40 60 80 100
VCE (V)
VCE (V)
Fig. 15- Typ. Output Capacitance Fig. 16- Typ. Capacitance vs. VCE
Stored Energy vs. VCE VGE= 0V; f = 1MHz
16 1.6

1.5
14
400V 1.4
12
Normalized V CE(on) (V)

1.3
10 1.2
VGE (V)

8 1.1

1
6
0.9
4
0.8
2 0.7

0 0.6
0 10 20 30 40 50 60 70 80 -50 0 50 100 150 200

Q G , Total Gate Charge (nC) T J , Junction Temperature (C)

Fig. 17 - Typical Gate Charge vs. VGE Fig. 18 - Normalized Typical VCE(on) vs.
ICE = 13A Junction Temperature
ICE = 13A; VGE = 15V
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IRGB20B60PD1

50 14
VR = 200V
TJ = 125C
TJ = 25C
I F = 8.0A 12
45
I F = 4.0A
I F = 8.0A
10
40 I F = 4.0A
trr- (nC)

Irr- ( A)
35

30
4

25
VR = 200V 2
TJ = 125C
TJ = 25C
20 0
100 1000 100 1000
di f /dt - (A/s) di f /dt - (A/s)

Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt

200 1000
VR = 200V VR = 200V
TJ = 125C TJ = 125C
TJ = 25C TJ = 25C

160

I F = 8.0A I F = 8.0A
di (rec) M/dt- (A /s)

I F = 4.0A
I F = 4.0A
120
Qrr- (nC)

80

40

A
0 100
100 1000 100 1000
di f /dt - (A/s) di f /dt - (A/s)

Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,

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 IRGB20B60PD1

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10 R1
R1
R2
R2
R3
R3
R4
R4 Ri (C/W) i (sec)
J C 0.0076 0.000001
0.05 J
1 2 3 4 0.2696 0.000270
1 2 3 4
0.02 0.1568 0.001386
0.01 0.01 Ci= i/Ri
Ci i/Ri 0.1462 0.015586

Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50
Thermal Response ( Z thJC )

1 0.20
0.10
0.05
R1 R2
0.1 0.02 R1 R2 Ri (C/W) i (sec)
0.01 J C
J 1.779 0.000226
1 2
1 2 3.223 0.001883
SINGLE PULSE Ci= i/Ri
( THERMAL RESPONSE ) Ci i/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGB20B60PD1

L
VCC
DUT 80 V DUT
0 480V
1K Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCC
L R=
PFC diode ICM

DUT /
VCC DUT
DRIVER VCC
Rg Rg

Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit

REVERSE RECOVERY CIRCUIT

VR = 200V

0.01
L = 70H
D.U.T.

D
dif/dt
ADJUST IRFP250
G

Fig. C.T.5 - Reverse Recovery Parameter

Test Circuit

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 IRGB20B60PD1

450 18 450 45

400 16 400 40
TEST CURRENT
350 tf 14 350 35

300 12 300 30
90% ICE tr
250 10 250 25

VCE (V)
VCE (V)

I CE (A)
ICE (A)
90% test current
200 8 200 20
5% V CE
10% test current
150 6 150 15

100 4 100 10
5% ICE
50 2 50 5% V CE 5

0 0 0 0
Eon Loss
Eoff Loss
-50 -2 -50 -5
-0.20 0.00 0.20 0.40 0.60 0.80 7.75 7.85 7.95 8.05 8.15
Time(s) Time (s)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 125C using Fig. CT.3 @ TJ = 125C using Fig. CT.3

3
trr
IF
ta tb
0

4
Q rr
2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.75 I RRM

1 di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
through zero crossing and IRRM
trr X IRRM
2. I RRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M /dt - Peak rate of change of
going I F to point where a line passing current during tb portion of trr
through 0.75 I RRM and 0.50 IRRM
extrapolated to zero current

Fig. WF3 - Reverse Recovery Waveform and

Definitions

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IRGB20B60PD1
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 - GATE
1 2 3 2 - DRAIN
2 -COLLECTOR
3 - SOURCE
3 EMITTER
4 - DRAIN
4 - COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21:: ,17(51$7,21$/ 3$57180%(5
,17+($66(0%/</,1(& 5(&7,),(5
/2*2
'$7(&2'(
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TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/03

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