Dynamic Response

MOS Capcitor

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MOS Transistors - Behaviors
Static Behavior:

Threshold Voltage

Channel-Length Modulation

Velocity Saturation

Sub-threshold Conduction
Dynamic (Transient) Behavior:

MOS Structure Capacitances

Channel Capacitances

Junction Capacitances

Sources-Drain Parasitic Resistance
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MOS Capacitances

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Dynamic Behavior of MOS Transistor
G

CGS CGD

S D

CSB CGB CDB

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Voltage independent capacitances

Oxide related Capacitances
Overlap capacitances CGDO CGSO

Voltage dependent capacitances

Dynamic gate capacitance

Junction capacitances

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BITS Pilani, Pilani Campus
MOS Transistor Capacitances

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Overlap Capacitances
Polysilicon gate

e ox
C ox =
t ox
Source Drain (F/m2)
W
n+ xd xd n+
C ol =C ox x d W=C o W
Gate-bulk
Ld
overlap C gso =C gdo =C ol
Top view

Gate oxide
tox
n+ L n+ *Cfringe = (2ox/) ln (1+Tpoly/tox)
Cross section

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Overlap Capacitances

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Linear and Saturation mode Analysis

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Gate-Channel Capacitances
G G G

S D S D S D
B B B

Cut-off Resistive Saturation

Most important regions in digital design: saturation and cut-off

Nitin Chaturvedi MOS Capacitance

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Variation of Gate-Channel Capacitances

CG C
WLC ox WLC ox
CG C
2WLC ox
CG CS 3
WLC ox C G CS = CG CD WLC ox
CGC B
2 2 CGCD

VG S 0 VDS /( VG S-VT) 1
VT

Capacitance as a function of the

Capacitance as a function of VGS
(with VDS = 0) degree of saturation

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Diffusion Capacitances

Gate
5

4 2 W
SiO2 1

3 n+ xj
p LS Substrate

C diff =C Bottom +C Sidewall =C 1 +( C 2 +C 3 +C 4 +C 5 )

C diff =C j L S W+C jsw ( 2L S +W )

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Analysis of junctions

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Type of junctions

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MOS Transistor Capacitance: Summary
Gate

CGS = Cgs + Cgso CGD = Cgd + Cgdo

Source Drain

CGB = Cgb
CSB = Cdiff CDB = Cdiff

Body

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Junction Capacitance: Recap

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Depletion Region thickness

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Depletion region charge(in terms of xd)

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Linearizing the Junction Capacitance
Replace non-linear capacitance by large-signal
equivalent linear capacitance which displaces
equal charge over voltage swing of interest

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BITS Pilani, Pilani Campus
Zero bias capacitance per unit area
Per unit
Area
Zero bias
side wall
junction
capacitance
per unit
length

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BITS Pilani, Pilani Campus
Total drain capacitance

Cdb = A. Cjo. Keq + P. Cjsw. Keq(sw)

Total Length of n+/p+ junction perimeter is the

sum of three sides of drain diffusion area.

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END

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