2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)

On Moderate Inversion/Saturation Regions

As Approximations to Reconciliation Model
I.M. Filanovsky, J.K. Jrvenhaara, and N.T. Tchamov

dependence of the drain current from the drain-source voltage

AbstractThe paper proposes analytical definitions of
moderate inversion and moderate saturation. These definitions are
introduced considering two different series expansions for the
function ln2(x). The expansions are matched: the upper limit for
convergence of the first series and the lower limit for convergence
of the second series define the border and transition from weak to
moderate inversion/saturation. The moderate inversion/saturation
corresponds to approximation of the function ln2(x) by a modified
sum of two first terms of the second series. Then, the condition of
inversion/saturation is defined by dominance of one term with
respect to another. The condition of moderate inversion/saturation
is a necessary step in transition from weak to strong
inversion/saturation. The introduced definitions correspond to
MOS transistor operation physics and eliminate discontinuity in
this transition.
Index TermsMOS transistor model, moderate inversion,
strong inversion, moderate saturation, strong saturation.
I. INTRODUCTION
(the gate-source voltage is assumed constant). Yet between
these two conditions should exist a moderate saturation. Again,
the definition of this moderate saturation in the form convenient
for tracing the transition from weak to medium, then from
medium to strong, and, finally, from strong to deep saturation
does not exist. In the following we give such convenient
definition for this case as well.
The basis of our derivation is the transistor reconciliation
model valid in all regions [10]. In this model the drain current
I D of an n-channel transistor without body effect is described
by the following equation
VGS ,VTH VGS ,VTH , nVDS
2 2
I D < I Z ln 1 e 2 nt , ln 1 e
2 nt
. (1)
Here I Z < 2C ' ox (W / L )n t 2 where t < (kt ) / q is the
thermal voltage, VTH is the threshold voltage. All other symbols

A s anticipated of over 30 years ago [1] MOS transistor

moderate inversion is an increasingly important region for
have their usual meanings. The substrate factor n may be
approximated as [10]
modern analog circuit design [2-8]. The most widely used
definition [9] of weak inversion says that a MOS transistor

n 1 [ / 2 V SB 2 F ] ( (2)
where F is the Fermi voltage. The model (1) usually provides,
operates in weak inversion if the gate-source voltage is less than
the threshold voltage. This definition assumes that for the gate with some precautions (wide and long transistor), a good
voltage larger than the threshold voltage the transistor starts to correspondence between theoretical and experimental results
operate in moderate inversion. With further increase of the [5, 10] in typical CMOS technologies.
gate-source voltage the transistor enters strong inversion. Yet, a
Table I Currents notations for different condition of inversion/saturation
simple expression of the transistor drain current operating in the Inversion Weak Moderate Strong
moderate inversion is absent. Our goal is to provide such an
expression. The reader will see that it also allows one to see the
transition from moderate to strong inversion and establish a Saturation
practical border between moderate and strong inversion. Deep I DW I DM I DS
The similar remark may be said about saturation. The
condition of deep saturation may be defined as an idealized Strong I DMS I DSS
situation when the drain current does not depend on the
drain-source voltage (remark: we are considering the idealized Moderate I DMM I DSM
model without drain length modulation). The condition of weak
saturation is defined by the well-known quadratic law Weak I DSW

This work was supported by Academy of Finland under project 270694 In the model (1), all voltages are taken with respect to the
(DEFRES). source. The eq. (1) is conveniently divided in two terms. The
I.M. Filanovsky is with the University of Alberta, Edmonton, Canada first one can be called inversion term. The drain-source
(igor@ece.ualberta.ca). voltage V DS appears in the second term only. This term can be
Other authors are with the Department of Electronics and Communications
Engineering, Tampere University of Technology, Korkeakoulunkatu 1,
FI-33720 Tampere, Finland (e-mail: nikolay@cs.tut.fi).

978-1-4673-8721-7/16/$31.00 2016 IEEE

called saturation term. This division allows one to consider III. DEEP SATURATION OPERATION
the degree of inversion separately from the degree of saturation. The drain currents for deep saturation operation are
Table I lists, via subscripts, the conditions for drain currents obtained from (1) discarding the saturation term depending on
considered in this paper. For example, I DSM means the Drain VDS and considering the approximations for the inversion
current with Strong inversion and Moderate saturation. In the term only. It is convenient to denote this term as
currents with deep saturation the subscripts include the symbol
VGS ,VTH
of infinity. All considered currents (we consider n-channel 2
I D < I Z ln 1 e 2 nt (12)
transistors) satisfy the conditions .
I D (V DS < 0) < 0 I D (V DS = 0) = 0 . (3)
Then, in weak inversion VGS ; VTH , and the condition
II. MATHEMATICS BEHIND THE APPROXIMATIONS VGS ,VTH
2 nt
In the following two series expansions [11] for the function | ,1 x |; 1 for x < 1 e is satisfied. Using the
2 VGS ,VTH
ln ( x) are necessary, namely
2 nt
2 approximation (6) with x < 1 e one obtains that the
(,1) k (,1 x ) k
ln ( x) <
2
k
for |-1+ x |<1,

(4) drain current in weak inversion and deep saturation is described
as
k <1
VGS ,VTH VGS ,VTH
and
2 I DW < I Z e nt < 2 C ' ox (W / L )n t 2 e nt (13)

(,1) k
ln ( x) < ln( ,1 x) ,
2
k
k <1 k ( ,1 x )
for |-1+ x |>1 . (5) This expression appears in many sources, for example in [5, 12].
VGS ,VTH
2 nt
The variable x used here is real positive variable. If the approximation (8) with x < 1 e is used in (12)
The series (4) is converging for 0 x <2 and is diverging the result will be
VGS ,VTH VGS ,VTH
at x < 2 . To avoid cumbersome approximations we will be nt 2 nt
using mostly the approximation by one term only; i.e. I DW < I Z e [1 , 1 e ]
(14)
ln ( x) , 1 x ( for 0 x < x <2.
2 2
(6) The eq. (14) is better matched with (12) (and with (1), of course)
When this is not sufficient (this happens when x becomes close for VGS ; VTH . The end of weak inversion is defined by the
to 2), then, instead of the approximation of (4) by two terms condition
ln 2 ( x) , 1 x (2 [1 , (,1 x) (1 / 4)(,1 x) 2 ] , (7) VGS < VTH . (15)
we will be using the modified form of (7), namely When VGS = VTH the transistor enters moderate inversion.
ln 2 ( x) , 1 x (2 [1 , 1 (,1 x)] (8) VGS ,VTH

where 1 < 1, (ln 2) . 2

Then, the condition | ,1 x |= 1 for x < 1 e 2 nt becomes
The series (5) is converging for x >2. In a similar way, we satisfied. Hence, for moderate inversion one has to use the
will be using mostly the approximation approximation (9) or (11). Substituting (9) with
2 VGS ,VTH
2 1 2 nt
ln ( x) ln(,1 x) for x >2. (9) x < 1 e in (12) one obtains
,1 x 2
When this approximation is not sufficient (this happens when , GS TH
V ,V
V , VTH 2 nt
x is still too close to 2), instead of the approximation I DM < I Z GS e (16)
2 n t

2
1 1
ln ( x) ln(,1 x)
2
, (10) This is exactly the result that we are searching. When
, 1 x 2(,1 x) 2
VGS increases further the transistor is moving towards strong
we will be using the modified form of (10), namely inversion operation. The first term in the brackets of (16) is
2
1 2 increasing, the second is decreasing and at the value of VGS
ln ( x) ln(,1 x)
2
, . (11)
, 1 x ( , 1 x ) 2 obtained from the equation
VGS ,VTH
,
where 2 < 1 , ln 2 . VGS , VTH
< e 2 nt (17)
One can verify that the approximations (8) and (11) give the 2 n t
same results at x =2 equal to (ln 2) 2 . Moreover, the derivatives both terms are equal. Solving (17) one finds that at this point
of (8) and (11) with respect to x are also very close at this (point of transition to strong inversion)
point, the difference is less than 0.015. For theoretical VGS , VTH < 0.567(2n t ) . (18)
considerations, the approximation (6) and (9) are sufficient; for After that point the first term in (15) gradually becomes
numerical calculations ((8) and (11) give slightly better results. dominating. One can set a practical border and consider that the
transistor operates in strong inversion when the second term is
reduced to, say, 5% of the first term. Solving the equation
VGS ,VTH
VGS , VTH ,
2 nt
< 20e (19)
2n t

Drain Current,ID(uA)
one finds that at this point (start of strong inversion)
VGS , VTH < 2.205(2n t ) (20)
When the difference VGS , VTH exceeds this value the transistor
operates in strong inversion and the current is equal to
2
V , VTH 1 W
I DS < I Z GS <
C ' ox (VGS , VTH ) 2 (21)
2 n t 2n L
depending on VGS only. This result is also widely used [5, 12].
If the approximation (11) is used in (12) with
VGS ,VTH
2 nt
x < 1 e the result will be Fig. 2 Calculated and approximated transconductance characteristics
2
V ,V
, GS TH , GS TH
V ,V
characteristics and experimental results are, indeed, in a good
VGS , VTH 2 nt nt
I DM < I Z e , 2e agreement.
2 n t (22)
Fig. 2 shows the results when the approximations (8) and
The eq. (22) is also a transconductance characteristic for (11) are used to obtain (14) for weak and (22) for moderate
transistor operating in moderate inversion (it is more precise, inversion. The eq. (14) of weak inversion is used for
and, of course, more complex). When VGS increasing the last VGS VTH =0.42V. Using (20) one can find that the transistor
two terms are disappearing and the final result will be the same enters strong inversion at VGS < 0.58 V. The eq. (22) of the
eq. (21). Yet, eq. (22) is matched with eq. (14) and gives the moderate inversion is used for 0.42 ; VGS 0.58 V. The drain
same result at VGS < VTH . But the calculations of onset of
current in the range VGS = 0.58 V was calculated using (21).
strong inversion and point of transition to strong inversion using
Using Fig. 2 it is difficult to see the how close the results of
eq. (22) give practically the same results as (18) and (20).
approximations to the model given by eq. (1). To see it better we
provide the Table II where the calculation of current in the
characteristic points are provided.

Table II Comparison of reconciliation model and its approximations

0.42V 0.58V 1.0V
Drain Current,ID(uA)

VGS
Equation Current
(12) I DW / I Z 0.48
(22) I DM / I Z 0.48 5.35 64
(21) I DS / I Z 4.87 64
(1) I D / I Z 0.48 5.34 64

Fig. 1 Calculated and measured transconductance characteristics
Let us see how the introduced approximations work. Fig 1
shows the transconductance characteristics of the transistor with
W / L =64m/4m aspect ratio fabricated in 0.18 m process.
The calculations were done using (1) with the low-field
transconductance factor of C ox ' =355A/V2, VTH =0.42V,
substrate factor n =1.4, and t =25.9mV. The transistor
current was measured using V SB =0, and VGS < V DS (the
ordinary practice to operate in deep saturation, yet avoiding the
Early voltage effect). Fig. 1 shows that the calculated
On can conclude that the eq. (14) approximates the model of eq.
(1) for weak equation very well, the approximation (22) is
covering both moderate and strong inversion, and (21) is useful
for simplification of analysis in strong inversion.
All approximation for the first row of Table I are now found.
IV. WEAK, MEDIUM AND STRONG SATURATION
The similar approximations can be done for the saturation
term in (1) considering as variable
VGS ,VTH , nVDS
2 nt
x < 1 e (23)
When VGS , VTH , nV DS is negative then the condition
| ,1 x |; 1 is satisfied and one have to use the approximation
 VGS ,VTH , nVDS
VGS ,VTH , nVDS VGS ,VTH , nVDS When VDS is very small the transistor operates in weak
2 2 nt
nt 2 nt
ln 1 e e 1 , 1 e saturation. But with increase of this voltage transistor moves to
stronger saturation. As soon as drain voltage achieves the value

(24) defined by (27) (for considered transistor this is 0.086V)
This situation occurs in two cases, first when VGS ; VTH (this transistor enters moderate saturation (with strong inversion, of
course), and its current is defined by the dependence
condition is corresponding to weak inversion and is not
considered here) and V DS 0 , and, second, when VGS = VTH V , V 2
GS TH

but nV DS = VGS , VTH . The approximation (24) is used below
2n t

in the expressions for the drain current of transistor operating in 2
I DSM < I Z VGS , VTH , nV DS
(30)
strong saturation.
, 2 n t
If VGS , VTH , nV DS is positive then the condition
, VGS ,VTH , nVDS VGS ,VTH , nVDS
| ,1 x |= 1 is satisfied one have to use the approximation 2 nt
,
nt
e , 2 e
VGS ,VTH , nVDS
2 2 nt When the drain voltage achieves the value of
ln 1 e
V DS < (VGS , VTH ) / n (in our case this is 0.2V) the transistor

2
enters strong saturation (with strong inversion). One have to use
V ,V , nVDS
, GS TH
V ,V , nVDS
, GS TH the approximation (24) and to write that the drain current is
VGS , VTH , nV DS 2 nt nt
e , 2e described now by the dependence
2 n t
V , V 2
(25) GS TH

2n t
The approximation (25) is used in the expression for the drain
I DSS < I Z VGS ,VTH , nVDS
current of transistor operating in moderate saturation. If the first VGS ,VTH , nVDS
(31)
, e nt 2 nt
term in the brackets of (25) becomes strongly dominating (this 1 , 1 e
happens for big values of VGS , VTH = 0 and small values of

V DS = 0 ) one can use the approximation for weak saturation With further increase of V DS the value of VGS , VTH , nV DS

VGS ,VTH , nVDS 2 becomes more and more negative and the current (31) arrives to
2 2 nt VGS , VTH , nV DS
ln 1 e its asymptotic value of I DS (strong inversion, deep saturation)
2 n t (26)
given by (21).
Again, one can set a practical border when one can move from
(24) to (26) or vice versa finding the corresponding value from
VGS , VTH , nV DS < 2.205(2n t ) (27)
(compare (27) with (20)). The approximation (26) is used in the
Drain Current,ID(uA)

expressions for drain currents of transistors operating in very

weak saturation.

V. APPLICATION TO TRANSISTOR OPERATION

Let us return now to the Table I and calculate the entries in
the last column of this table.
Assume now that we choose VGS = VTH sufficient for strong
inversion (i.e. we will be using (21) as approximation for the
first term of (1) in all results of this part).Then, if VDS is small
so that VGS , VTH , nV DS 0 the transistor will operate in
strong inversion and weak saturation. The transistor drain Fig. 3 Drain characteristics using proposed approach
current is described by the equation
The drain characteristics obtained using the approximations
V , V 2
VGS , VTH , nV DS
2
I DSW < I Z GS TH
, (29), (30) and (31) and their comparison with that obtained
2n t 2n t (28) using (1) is given in Fig. 3. The results are very close, yet this is

not the main advantage of the proposed approach.
This equation is usually [10] reduced to It is supposed in many textbooks, for example in [14], that
IZ nV 2 eq. (29) is valid in the whole triode region of operation, i.e.
I DSW < (VGS , VTH )V DS , DS
2n t 2 2 (29) for 0 V DS (VGS , VTH ) / n (in case of n < 1 , which is
frequently used as approximation, 0 V DS (VGS , VTH ) ). At
the end of this interval this current achieves the value of
2 in difficulties of interpretation. Our experience [14] shows that
V , VTH
I DS < I Z GS
(32)
2n t
(the same as (21)). Further increase of VDS does not result in
any increase of current. Indeed, the drain characteristics
obtained using (1) and (29) and (32), without the intermediate
results (30) and (31), are very close (Fig. 4). Yet, this numerical
proximity does not involve any correct physical interpretation.
In the real device, only the sequence of approximations (29),
(30) and (31) reflects the physics: the device is arriving to the
current (32) asymptotically, preserving the continuity of the
current derivative and finite output impedance, as it follows
from eq. (31).
Drain Current,ID(uA)
Fig. 4 Drain characteristics using standard approach
The Table I includes two additional entries, I DMM , and
I DMS . To avoid cumbersome expressions we leave their
derivation at the discretion of reader.
Some remarks are necessary. In accordance with (1), for
small values of V DS one have to use similar expansions for both
terms. The transistor with weak inversion should operate in
strong (or deep) saturation, no other regimes are possible; one
have to use the same type approximations for both parts of (1).
The result can be found in [10]. The transistor with moderate
inversion should operate or moderate saturation ( I DMM ) for
small values of V DS , or, with increase of V DS , in moderate
inversion and strong saturation with the current I DMS .
VI. DISCUSSION AND CONCLUSIONS
The main result of this work is introduction of convenient
expressions for moderate inversion and moderate saturation.
The absence of analytic expressions for moderate inversion is
partially compensated by the method of inversion coefficients
(see [5], the bibliography to Chapter 3). Yet, this approach is not
direct. It is more a mathematical tool, and does allow to see the
transition from moderate to strong inversion. The deficiency of
this approach is felt especially in calculation of nonlinear
distortions [2, 13]; the absence of suitable approximation results
the approximations developed in this paper may be more
suitable for this purpose.
The developed expressions do not take into consideration the
effects of velocity saturation, mobility degradation, and series
drain-source resistance. This can be done using the same
approach as in [2]; yet, the last effect may have different
interpretation if eq. (31) is considered.
The second result is the sequence of approximations (29) to
(31). It is better corresponding to the device physics than the
disjointed results (29) and (32). This result is, mainly, of
methodical value, because the circuits are usually designed for
deep saturation operation.
It is interesting to find out how the access to the direct
expressions for moderate inversion can simplify the design.
This is considered as a matter for future work.
ACKNOWLEDGEMENT
The first author is thanking Dr. Y. Tsividis for reading the
initial version of this manuscript, valuable critical remarks and
support [15].
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