Beruflich Dokumente
Kultur Dokumente
in On-Wafer Measurement
Uwe Arz1
Dylan F. Williams2
Outline
Introduction
Applications
- VNA test-set drift
- Substrate permittivity compensation
- Characteristic impedance measurement
- 4-port calibration
Summary and conclusions
2
Introduction
2-tier deembedding
VNA
coaxial cal. on-wafer cal.
(1st tier) (2nd tier)
a b b a
port 1 port 2
error box error box
3
Introduction
5
VNA test-set drift and connector
repeatability
7 hours delay
2 hours delay
0.5 hours delay
- Sij
0.03
n
m
Upper bound for Sij
0.02
0.01
0
10 20 30 40
6
Frequency (GHz)
Influence of substrate permittivity
and compensation
G G G G
S Thru S Thru S Thru S Thru
G G G G
0.15
0.10
0.05
0
0 10 20 30 40
8
Frequency (GHz)
Influence of substrate permittivity
and compensation
Worst-case differences after compensation
0.06
lanthanum aluminate
0.05 fused silica
sapphire Model of transition
repeatability error
Upper bound for Sij' - Sij
to CPW
0.04
0.03
0.02
0.01
0
0 10 20 30 40
Frequency (GHz)
second step
CMOS TEST STRUCTURES
reference impedance: Z0
first step
calibration
CPW CALSET comparison
reference plane of 1st-tier-Multiline-TRL
calibration on GaAs substrate (CPW standards)
800 -10
arg(Z0)
600 -20
| Z 0 | ( )
arg(Z0)
Calculation (metal 5)
Calculation (metal 2)
400 Measurement (metal 2) -30
Measurement (metal 5)
| Z0 |
200 -40
0 -50
0 10 20 30 40
Frequency (GHz) 11
4-port measurement setup
Port 1 Port 2
ANA
50
N
50 W E
50
S 50
Port 1: WN Port 2: E N
N N N
W CPW CALSET
E W E W E
S S S
Port 2: E S Port 1: W S
13
4-port measurement example
Symmetric coupled lines on silicon
500 15
Measurement
95% Confidence Intervals
400 Calculation
R c11= R c22
10
Lcij (nH/cm)
300 L c11= L c22
Rcij (/cm)
200
5
100
L c12
R c12
0 0
0 5 10 15 20 25 26.5
Frequency (GHz)
(Arz/Williams/Walker/Grabinski, IEEE Trans. Microwave Theory and Tech., Dec. 2000) 14
Summary and conclusions