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SEMICONDUCTOR TECHNICAL DATA



  
     15 AMPERES
NPN SILICON
POWER
. . . designed for high speed, high current, high power applications.

METAL TRANSISTOR
Very fast switching times: 200 VOLTS

TF max. = 0.4 s at IC = 8 A 120 WATTS

MAXIMUM RATINGS

Rating Symbol Value Unit

CollectorEmitter Voltage VCEO(sus) 200 Vdc

CollectorBase Voltage VCBO 250 Vdc

EmitterBase Voltage VEBO 7 Vdc

CollectorEmitter Voltage (VBE = 2.5 V) VCEX 250 Vdc

CollectorEmitter Voltage (RBE = 100 ) VCER 240 Vdc

v
CollectorCurrent Continuous IC 15 Adc

CollectorCurrent Peak (pw 10 ms) ICM 20 Apk

CASE 107
BaseCurrent continuous IB 3 Adc TO204AA

Total Power Dissipation @ TC = 25_C PD 120 Watts (TO3)

Operating and Storage Junction TJ, Tstg 65 to 200 _C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case JC 1.46 _C/W

1.0

0.8
DERATING FACTOR

0.6

0.4

0.2

0 40 80 120 160 200


TC, TEMPERATURE (C)
Figure 1. Power Derating

SWITCHMODE is a trademark of Motorola, Inc.

REV 7

Motorola, Inc. 1995 1


Motorola Bipolar Power Transistor Device Data

BUX41


ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS1

CollectorEmitter Sustaining Voltage VCEO(sus) 200 Vdc

(IC = 200 mA, IB = 0, L = 25 mH)

Collector Cutoff Current at Reverse Bias: ICEX mAdc


(VCE = 250 V, VBE = 1.5 V) 1.0

(VCE = 250 V, VBE = 1.5 V, TC = 125_C) 5.0

CollectorEmitter Cutoff Current ICEO 1.0 mAdc

(VCE = 160 V)

EmitterBase Reverse Voltage VEBO 7 V


(IE = 50 mA)


EmitterCutoff Current IEBO 1.0 mAdc
(VEB = 5 V)

SECOND BREAKDOWN


Second Breakdown Collector Current with base forward biased IS/b Adc


(VCE = 30 V, t = 1 s) 4.0
(VCE = 135 V, t = 1 s)


0.15

ON CHARACTERISTICS1

DC Current Gain hFE

(IC = 5 A, VCE = 4 V) 15 45

(IC = 8 A. VCE = 4 V) 8

CollectorEmitter Saturation Voltage VCE(sat) Vdc

(IC = 5 A, IB = 0.5 A) 1.2


(IC = 8 A, IB = 1 A) 1.6


BaseEmitter Saturation Voltage VBE(sat) 2.0 Vdc

(IC = 8 A, IB = 1 A)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product fT 8.0 MHz

(VCE = 15 V, IC = 1 A, f = 4 MHz)

SWITCHING CHARACTERISTICS (Resistive Load)


s

Turnon Time ton 0.6


(IC = 8 A, IB1 = IB2 = 1 A,

v
Storage Time ts 1.5
VCC = 150 V, RC = 18.75 )
Fall Time tf 0.4
v
1 Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

2 Motorola Bipolar Power Transistor Device Data


BUX41
100 There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (A)
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation
10 i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25_C, TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
1
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.

1 10 100
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area

2.0 50
IC/IB = 8
1.6 40

VCE = 4
V, VOLTAGE (V)

1.2 VBE 30

0.8 20

VCE
0.4 10

0 0
1 10 100 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 3. On Voltages Figure 4. DC Current Gain

3.0 VCC
2.0
5600 F
t, TIME ( s)

tS
RC
1.0
IB2

0.4 VCC = 150 V


tF
0.3 IB1 RB RC = 18.5
ton RB = 6.8
0.2
IC/IB = 8
IB1 = IB2
0 4 8 12 16 20 RC RB: Non inductive resistances

IC, COLLECTOR CURRENT (A)


Figure 6. Switching Times Test Circuit
Figure 5. Resistive Switching Performance

Motorola Bipolar Power Transistor Device Data 3


BUX41

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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4 Motorola Bipolar Power Transistor Device Data

*BUX41/D*
BUX41/D

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