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by BUX41/D
SEMICONDUCTOR TECHNICAL DATA
15 AMPERES
NPN SILICON
POWER
. . . designed for high speed, high current, high power applications.
METAL TRANSISTOR
Very fast switching times: 200 VOLTS
MAXIMUM RATINGS
v
CollectorCurrent Continuous IC 15 Adc
CASE 107
BaseCurrent continuous IB 3 Adc TO204AA
Temperature Range
THERMAL CHARACTERISTICS
1.0
0.8
DERATING FACTOR
0.6
0.4
0.2
REV 7
BUX41
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
OFF CHARACTERISTICS1
(VCE = 160 V)
EmitterCutoff Current IEBO 1.0 mAdc
(VEB = 5 V)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased IS/b Adc
(VCE = 30 V, t = 1 s) 4.0
(VCE = 135 V, t = 1 s)
0.15
ON CHARACTERISTICS1
(IC = 5 A, VCE = 4 V) 15 45
(IC = 8 A. VCE = 4 V) 8
BaseEmitter Saturation Voltage VBE(sat) 2.0 Vdc
(IC = 8 A, IB = 1 A)
DYNAMIC CHARACTERISTICS
(VCE = 15 V, IC = 1 A, f = 4 MHz)
v
Storage Time ts 1.5
VCC = 150 V, RC = 18.75 )
Fall Time tf 0.4
v
1 Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
1 10 100
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0 50
IC/IB = 8
1.6 40
VCE = 4
V, VOLTAGE (V)
1.2 VBE 30
0.8 20
VCE
0.4 10
0 0
1 10 100 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
3.0 VCC
2.0
5600 F
t, TIME ( s)
tS
RC
1.0
IB2
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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*BUX41/D*
BUX41/D