Beruflich Dokumente
Kultur Dokumente
Introduction to Semiconductor
Devices
L-33 MOSFET-4
B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur
81
G-Number
B. Mazhari, IITK
MOS Transistor: Long Channel
N A =21017cm-3 ; t ox =10nm
M =4.3eV; L=5m;W 1m
ch 500cm 2 V -1s-1
82
G-Number
B. Mazhari, IITK
L = 5m
Leff ~ 4.4 m
83
G-Number
B. Mazhari, IITK
Current Voltage Characteristics VGS VTN
VGS
VDS
SiO2 x
+ y
+ N
N
VBS
dVch ( x ) I DS J N dydz
J N q n N y
dx
dVch ( x )
I DS W QN N
dx
Asumption-1 : current is primarily drift
Current Voltage Characteristics VGS VTN
VGS
VDS
SiO2 x
+ y
+ N
N
VBS
dVch ( x )
I DS W QN N
dx
QN ( x ) COX VGS VT Vch ( x )
VBS
qN A
2 2
2
2 qN A
2
2 2
x 2
y S x 2
y y 2
S
L 0.5 m
Asumption-3 : Gradual channel approximation 1 10nm
50
tox
QN ( x ) COX VGS VT Vch ( x )
QN ( x ) COX VGS VT Vch ( x ) 2F VSB Vch ( x ) 2F VSB
VGS
VDS
SiO2
+
+ N
N
P type
P-type X=0
X 0 X=L
X L
VBS
I DS dVch ( x )
VGS VT Vch ( x )
W N COX dx
VGS
W 2
VDS
VDS I DS N COX VGS VT VDS
SiO2
L 2
+
+ N
N
QN ( x ) COX VGS VT Vch ( x ) 0
P-type X=0 X=L
VBS
VGS VT VDS 0
1. Drift Current
2. Charge sheet approximation
3. Gradual channel approximation
4. Negligible variation of depletion charge
along the channel
5 Constant Mobility
5.
6. Negligible source and drain resistances
VGS
VDS
SiO2
+ +
N N
P-type
VBS
Example
21017cm-3 ; t ox =10nm
N A =210 10nm
M =4.3eV; L=5m;W 1m
ch 500cm 2 V -11s-11
2 S q N A 2F
VT VFB 2F 0.805V
Cox
-6
6
8.0x10
VDS = 0.1V
-6
6.0x10
A)
DS (A
-6
4.0x10
ID
-6
2.0x10
0.0
00
0.0 05
0.5 10
1.0 15
1.5 20
2.0 25
2.5 30
3.0
VGS (volts)
-6
8.0x10 VDS = 0.1V
-6 Intercept -3.05614E-6
6.0x10
Slope 3.54796E-6
IIDS (A)
-6
4.0x10
-6
6
2 0 10
2.0x10
0.0
VGS (volts)
W 2
VDS VT 0.5VDS 0.86V
I DS N COX VGS VT VDS
L 2 VT 0.81V
W
N COX VGS VT 0.5
0 5VDS VDS
L 514 cm2 V-1s-1
Saturation
W 2
VDS
I DS N COX VGS VT VDS
L 2
I DS W QN N F ( x )
N F ( x ) vsat
VGS 3V ;VDS 0.1V
VGS 3V ;VDS 2.2V
0
4
Cm)
-1x10
Ex (V/C
4
-2x10
VGS=3; VDS = 5V
4
-3x10
1 2 3 4
X (m))
Qinv ( x ) Cox (VGS VTHN V ( x )) Cox (3 0.8 2.2) 0
Pinchoff
VTHN 0.8V
3V
2.2V
O id
Oxide
n+ n+
p-type
B High resistance region
Any further increase in drain bias is absorbed in a small region next to the drain
and rest of channel is not much affected and thus current becomes constant.
R R R R R
VD
R 100R
VD
6
VGS=3; VDS = 5V
5
otential (V)
3
Po
0
0 1 2 3 4 5
X (m)
VGS VT VDS 0
-5
9 0x10
9.0x10 VGS = 3V
-5
simulation
S (A)
6.0x10
IDS
-5
3.0x10 Model
0.0
0 2 4
VDS (volts)
( )
W 2
VDS W
N COX VGS VT VDS N COX VGS VT
2
I DS I DSAT
L 2 2L
3V
2 2V
2.2V
Oxide
n+ n+
p type
p-type
B
After pinchoff or saturation, drain current does not change much with drain
voltage but is still very sensitive to gate voltage. MOSFET can now AMPLIFY
signals
IDS
+ I DS I DS
+
VGS VDS
VGS VDS
- -
For voltages larger than saturation voltage
Qinv ( x ) Cox (VGS VTHN V ( x )) Cox (3 0.8
0 8 22.2)
2) 0
3V
5V
Oxide
n+ n+
p-type
B
Pinchoff point moves left towards the source end. Voltage is VDSAT = 2.2V
Channel Length Modulation
5V
Oxide
n+ n+
L/
p-type
y L L L L
B
W L
N COX VGS VT 1
2
I DSAT
2L
2L L
L
5V
Oxide
n+ n+
L/
p-type L L L
L
B
W VDS VDSAT
N COX VGS VT 1
2
I DSAT
2L Favg L
W VDS VDSAT
N COX VGS VT 1
2
I DSAT
2L Favg L
N COX VGS VT 1 VDS VDSAT
W 2
I DSAT
2L
: channel length modulation parameter
1
Favg L
L
5V
Oxide
n+ n+
L/
p-type L L L
L
B
-5
5
9 0 10
9.0x10 VGS = 3V
-5
IDS ((A)
6.0x10
-5
3.0x10
0.0
0 2 4
VDS (volts)
N COX VGS VT 1 VDS VDSAT
W
I DSAT
2
-5 2L
S (A) 7 0x10
7.0x10
-5
6.9x10
IDS
Value
Intercept
p 6.86755E-5
-5 Slope 1.85951E-7
6.9x10
VDS ((volts)
lt )
I DSAT W
N COX VGS VT I DSAT 2.7 103 V 1
2
VDS 2L
1 micron channel length transistor
VG = 3Volts
-4
4.4x10
A)
IIDS (A
-4
4.3x10 Value
Intercept 3.95207E-4
Slope 1.32771E-5
-4
4 3.3
3 3 102 V 1
4.2x10
2.7 3.0
VDS (volts)
1
Favg L
Subthreshold Characteristics
-6
8.0x10
VDS = 0.1V
-6
6.0x10
IDS (A))
-6
4.0x10
-6
2.0x10
VT 0.81
0 81V
0.0
VGS (volts)
-5
10
-7
10
VDS = 0.1
-9
10
S (A)
-11
10
IDS
-13
10
-15
10
0 1 2 3
VT
VGS (volts)
( lt )
MOS Operating
p g Regions
g
Saturation Triode
(VDS > VDSAT) (VDS < VDSAT)
VG
2 S q N A 2F VSB
VS
Qinv
SiO2 VGB VFB 2F VSB
Cox COX
N-type
2 S q N A SB
VGB VFB SB
P-type
VB
Cox
2 S q N A S VB VS VS
VG VB VS VFB S VB VS
Cox
2 S q N A S VBS
VGS VFB S
Cox
qqVGS
qVGS I DS exp
Qinv exp n kT
n kT
-5
5
10
-7
10
1 d log( I DS )
10
-9
VDS = 0
0.1
1
S
DS (A)
dVGS
-11
10
ID
VG
-13
10
S
10
-15
I D2
log
0
VT
1 2 3 D1
I
VGS (volts)
-11
10
-13
10 VT
S
-15 IOFF Io
10 log
OFF
I
0 1 2 3
VT
VGS (volts)
I o VT W
2
log I DSAT N COX VGS VT
2L
I OFF S
OFF state current increases exponetially with reduction
in threshold voltage
qVGS qVGS
d log( I DS ) exp
p Qinv exp
S 1
I DS
dVGS n kT n kT
ni2 q S
nS exp
NA kT
q
d log(exp S )
S 1 kT q d S
dVGS 2 3kT dVGS
2.3
2 S q N A S VBS Qd
VGS VFB S
Cox
kT Cdep
d S Cdep d S S 2.3 1
1 0 q Cox
dVGS Cox dVGS
-5
10
-7
10
VDS = 0.1
-9
IDS (A) 10
-11
10 Value
Interce -15.63
-13 Slope 11.17
10
-15
10 ~89.5 mV/decade
0 1 2 3
VT
VGS (volts)
kT Cdep
S 2.3 1 ~94 mV/decade
q Cox