Search...

HomeAptitudeLogicalReasoningVerbalAbilityGKEngineeringInterviewOnlineTestPuzzlesAsk
Now!

PlacementPapers::BSNL
WhyBSNLPlacementPapers?
LearnandpracticetheplacementpapersofBSNLandfindouthowmuchyouscorebeforeyouappearfor
yournextinterviewandwrittentest.

WherecanIgetBSNLPlacementPaperswithAnswers?
IndiaBIXprovidesyoulotsoffullysolvedBSNLPlacementPaperswithanswers.Youcaneasilysolveall
kindofplacementtestpapersbypracticingtheexercisesgivenbelow.

HowtosolveBSNLPlacementPapers?
Youcaneasilysolveallkindofquestionsbypracticingthefollowingexercises.

HomeInterviewQuestionsPlacementPapersBSNLViewPaper

BSNLPAPER

PostedBy:AyanRating:+29,12
HiFriends

1.Ifthevoltageappliedacrossacapacitanceistriangularinwaveformthenthewaveformofthecurrentis
a)Triangularb)Trapezoidalc)Sinusoidald)Rectangular

2.Oneofthefollowingstatementwhichistrueforrelativedielectricconstantis
a)Itisdimensionless
b)Itisnotequaltounityforvacuum
c)Itsvalueforallsubstancesislessthanone
d)None

3.Puremetalsgenerallyhave
a)highconductivityandlowtemperaturecoefficient
b)highconductivityandlargetemperaturecoefficient
c)lowconductivityandzerotemperaturecoefficient
d)lowconductivityandhightemperaturecoefficient

4.Forsmallsize,highfrequencycoils,themostcommoncorematerialis
a)Airb)Ferritec)Powderediond)Steel

5.ForanabruptjunctionVaractordiode,thedependenceofdevicecapacitance(C)onappliedreversebias
(V)isgivenby

a)CaV1/3b)CaV1/3c)CaV1/2d)CaV1/2

6.Asuperconductorisa
a)AmaterialshowingperfectconductivityandMeissnereffectbelowacriticaltemperature
b)Aconductorhavingzeroresistance
c)Aperfectconductorwithhighestdimagneticsusceptibility
d)Aperfectconductorwhichbecomesresistivewhenthecurrentdensitythroughitexceedsacriticalvalue

7.Whenasemiconductorbasedtemperaturetransducerhasatemperaturecoefficientof2500mV/0Cthen
thistransducerisindeeda
a)Thermistor
b)Forwardbiasedpnjunctiondiode
c)Reversebiasedpnjunctiondiode
d)FET

8.Thelocationoflightningarrestoris
a)Nearthetransformer
b)Nearthecircuitbreaker
c)Awayfromthetransformer
d)None

9.TimeconstantofanRCcircuitincreasesifthevalueoftheresistanceis
a)Increasedb)Decreasedc)Neitheranorbd)Bothaandb

10.Intrinsicsemiconductorsarethosewhich
a)Areavailablelocally
b)Aremadeofthesemiconductormaterialinitspurestfrom
c)Havemoreelectronsthanholes
d)Havezeroenergygaps

11.TheprimarycontrolondraincurrentinaJFETisexertedby
a)Channelresistance
b)Sizeofdepletionregions
c)Voltagedropacrosschannel
d)Gatereversebias

12.Theelectricalconductivityofmetalswhichisexpressedinohm1m1isoftheorderof
a)1010b)105c)104d)106

13.Whenbiasedcorrectly,azenerdiode
a)actsasafixedresistance
b)hasaconstantvoltageacrossit
c)hasaconstantcurrentpassingthroughit
d)neveroverheats

14.Thecurrentamplificationfactoradcisgivenby
a)IC/IEb)IC/IBc)IB/ICd)IB/IE

15.Comparedtobipolars,FETshave
a)highinputimpedance
b)lowinputimpedance
c)sameinputimpedance
d)none

16.ThesourcedrainchannelofJFETis
a)ohmic
b)bilateral
c)unilateral
c)unilateral
d)bothaandb

17.Adiacisequivalenttoa
a)PairofSCRs
b)PairoffourlayerSCRs
c)Diodeandtworesistors
d)Triacwidth

18.WhenasampleofNtypesemiconductorhaselectrondensityof6.251011/cm3at300Kandifthe
intrinsicconcentrationofcarriersinthissampleis2.51013/cm3thentheholedensitywillbe

a)106/cm3b)103/cm3c)1010/cm3d)1012/cm3

19.Whenthetwonetworksshowninfig.areequivalentwithrespecttotheterminals1and2atall
frequenciesthenthevaluesofCA,LB,LCandCCwillbe

a)0.5,0.33,6,0.166
b)0.5,3,6,0.66
c)0.5,3,3,2
d)0.5,3,6,0.166

20.ThetransmissionparameterofthenetworkCwhenthetransmissionparameterofthenetworkAandB
areandrespectivelyare

Ans.

21.Thestatement'Inanynetworkoflinearimpedances,thecurrentflowingatanypointisequaltothe
algebraicsumofthecurrentscausedtoflowatthatpointbyeachofthesourcesofemftakenseparatelywith
allotheremf'sreducedtozerorepresents
a)Kirchhoff'slaw
b)Norton'stheorem
c)Thevenin'stheorem
d)Superpositiontheorem

22.Oneofthefollowingmodeswhichhasthecharacteristicsofattenuationbecominglessasthefrequencyis
increasedandisattractiveatmicrowavefrequenciesofcircularcylindricalwaveguidesis
a)TE1modeb)TM01modec)TE01moded)Higherordermode

23.Atwoportnetworkissymmetricalif
a)z11z22z12z21=1
b)h11h22h12h21=1
c)ADBC=1
d)y11y22y12y21=1

24.Fortransmissionlineloadmatchingoverarangeoffrequencies,itisbesttousea
a)balun
b)broadbanddirectionalcoupler
c)doublestub
d)singlestubofadjustableposition

25.Thepolesandzerosofadrivingpointfunctionofanetworkaresimpleandinterlaceonthenegativereal
axiswithapoleclosesttotheorigin.Itcanberealised
a)byanLCnetwork
b)asanRCdrivingpointimpedance
c)asanRCdrivingpointadmittance
d)onlybyanRLCnetwork
d)onlybyanRLCnetwork

26.Polesandzerosofadrivingpointfunctionofanetworkaresimpleandinterlaceonthejwaxis.The
networkconsistsofelements
a)RandCb)LandCc)RandLd)R,LandC

27.Foratwoportreciprocalnetwork,theoutputopencircuitvoltagedividedbytheinputcurrentisequalto
a)Bb)Z12c)1/y12d)h12

28.Inashortelectricdoublettheradiationpropertiesaresothat
a)Theinductionfielddiminishesasthesquarerootofthedistanceandisonlyappreciableinthevicinityof
theconductor.
b)Intheradiation,magneticfieldisminimumwhenthecurrentismaximum.
c)Theradiationresistanceofashortdoubletantennaisextremelyhigh.
d)Meanrateofpowerthroughaunitareaofsphericalspheresurroundingthisdoubletisproportionaltothe
squareoftheelementallength,otherfactorsremainingconstant.

29.Thefrequencymodulated(FM)radiofrequencyrangeisnearly
a)250300MHzb)150200MHzc)90105MHzd)3070MHz

30.Inanundergroundcablethedistortioninthetransmissionofcarrierfrequencycanbeeliminatedbyusing
a)Inductiveloadingb)Resistiveloadingc)Capacitiveloadingd)Shielding

31.Thecharacteristicimpendanceofatransmissionlinewithinductance0.294mH/mandcapacitance60
pF/mis
a)49Wb)60Wc)70Wd)140W

32.Oneofthefollowingstatementswhichisnottrueforastriplinecomparedtoawaveguideis
a)Itcanbedirectlyconnectedtosemiconductormicrowavedevices
b)Itismuchsmallerinsize
c)Ithasasmallerbandwidth
d)Lossesareless

33.Foraquarterwavelengthidealtransmissionlineofcharacteristicimpedance50ohmsandload
impedance100ohms,theinputimpedancewillbe
a)25Wb)50Wc)100Wd)150W

34.Thedepthofpenetrationorskindepthforanelectromagneticfieldoffrequencyfinaconductorof
resistivityrandpermeabilitymis
a)inverselyproportionaltorandfanddirectlyproportionaltom
b)directlyproportionaltorandinverselyproportionaltofandm
c)directlyproportionaltofandinverselyproportionaltorandm
d)inverselyproportionaltorandmanddirectlyproportionaltof

35.Whenanantennahasagainof44dBthenassumingthatthemainbeamoftheantennaiscircularincross
sectionthebeamwidthwillbe
a)0.44560b)1.44560c)2.44560d)3.44560

36.Lensantennasusedformicrowavesareusuallymadeof
a)Polystyrene
b)Glassoflowrefractiveindex
c)Paraboloidsurfaces
d)Dielectricmediahavinglargerefractiveindex

37.Oneofthefollowingtypesofinstrumentwhichisanelectrometeris
a)Electrodynamometer
b)PMMC
c)Electrostatic
d)Movingiron
d)Movingiron

38.Whenanaccurrentof5Aanddccurrentof5Aflowsimultaneouslythroughacircuitthenwhichofthe
followingstatementistrue?
a)Anacammeterwillreadlessthan10Abutmorethan5A
b)Anacammeterwillreadonly5A
c)Adcammeterwillread10A
d)Adcammeterwillreadzero

39.WhenQfactorofacircuitishigh,then
a)powerfactorofthecircuitishigh
b)impedanceofthecircuitishigh
c)bandwidthislarge
d)noneofthese

40.Theresolutionofalogicanalyseris
a)themaximumnumberofinputchannels
b)theminimumdurationoftheglitchitcancapture
c)it'sinternalclockperiod
d)theminimumamplitudeofinputsignalitcandisplay

41.TheaperturetimeofanAtoDconverterisgivenby

42.Amemorylesssystemis
a)causalb)notcausalc)nothingcanbesaidd)none

43.Anaircapacitorisa
a)timevariant
b)activedevice
c)timeinvariant
d)timeinvariantandpassivedevice

44.Thermistorsaremadeof
a)puremetals
b)pureinsulators
c)sinteredmixturesofmetallicoxides
d)puresemiconductor

45.Piranigaugeisusedtomeasure
a)verylowpressures
b)highpressures
c)pressuresintheregionof1atm
d)fluidflow

46.Thesecircuitsconvertsinputpoweratonefrequencytooutputpoweratadifferentfrequencythrough
onestageconversion
a)ACvoltagecontrollers
b)Cycloconverters
c)Phasecontrolledrectifiers
d)Inverters

47.InaforwardvoltageTriggeringthyristorchangesfrom
a)offstatetoonstate
b)onstatetooffstate
c)onstatetoonstate
d)offstatetooffstate

48.QfactorofacoilinMaxwellbridgeisobtainedas
48.QfactorofacoilinMaxwellbridgeisobtainedas
Ans.wCR

49.Athyristor,whentriggered,willchangefromforwardblockingstatetoconductionstateifitsanodeto
cathodevoltageisequalto
a)peakrepetitiveoffstateforwardvoltage
b)peakworkingoffstateforwardvoltage
c)peakworkingoffstatereversevoltage
d)peaknonrepetitiveoffstateforwardvoltage

50.Gatecharacteristicofathyristor
a)isastraightlinepassingthroughorigin
b)isofthetypeVg=a+bIg
c)isacurvebetweenVgandIg
d)hasaspreadbetweentwocurvesofVgIg

51.Afourquadrantoperationrequires
a)twofullconvertersinseries
b)twofullconvertersconnectedbacktoback
c)twofullconvertersconnectedinparallel
d)twosemiconvertersconnectedbacktoback

52.Ifforasinglephasehalfbridgeinverter,theamplitudeofoutputvoltageisVsandtheoutputpowerisP,
thentheircorrespondingvaluesforasinglephasefullbridgeinverterare
a)Vs,P
b)Vs/2,P
c)2Vs,2P
d)2Vs,P

53.ForcriticaldampingoftheresonantcircuitconsistingofRd,L,Cinseriesis
Ans.

54.InanenhancementtypeMOSFETtheoutputVIcharacteristicshas
a)onlyanohmicregion
b)onlyasaturationregion
c)onlyohmicregionat10Wvoltagevaluefollowedbyasaturationregionathighervoltages
d)anohmicregionatlargevoltagevaluesprecededbyasaturationregionatlowervoltages

55.Theenergygapinasemiconductor
a)increaseswithtemperature
b)remainsconstant
c)slightlyincreasewithtemperature
d)decreasewithtemperature

56.Inanelectroniccircuitmatchingmeans
a)connectingahighimpedancedirectlytolowimpedance
b)selectionofcomponentswhicharecompatible
c)transferringmaximumamountofsignalbetweendifferentkindsofcircuits
d)RCcoupledstages

57.PchannelFETsarelesssuperiorthanNchannelFETsbecause
a)Theyhavehigherinputimpedance
b)Theyhavehighswitchingtime
c)Theyconsumelesspower
d)Mobilityofelectronsisgreaterthanthatofholes

58.SmallincreaseintemperatureintheCEconnectedtransistoristhe
a)IncreaseinICEO
b)Increaseinaccurrentgain
b)Increaseinaccurrentgain
c)Decreaseinaccurrentgain
d)Increaseinoutputresistance

59.Anamplifierhasabandwidthof20KHzandamidbandgainof50withoutfeedback.Ifanegative
feedbackof1%isappliedthenbandwidthwithfeedbackis
a)13.3KHzb)30KHzc)10KHzd)40KHz

60.TheoutputofaclassBamplifier
a)isdistortionfree
b)consistsofpositivehalfcyclesonly
c)isliketheoutputofafullwaverectifier
d)comprisesshortdurationcurrentpulses

Likethispage?+29 12

Readmorepapers:

BSNLPAPER
BSNLPAPER
BSNLPAPER
BSNLPAPER
BSNLPAPER
BSNLPAPER
BSNLPAPER11JAN2009AMBALACANTT
BSNLPAPER05JUL2008
BSNLPAPER20JUN2008
BSNLPAPER24JUN2008
BSNLPAPER20JUL2008
BSNLPAPER
BSNLPAPER
BSNLPAPER
BSNLPAPER
BSNLGEJTORecruitmentExamination
BSNLGEJTORecruitmentExamination(2)

CompaniesList:

3iInfotechAAIABACUSABBAccelFrontlineAccentureAditiAdobeADPAgreeya
AkamaiAlcatelLucentAllfonAlumnusAmazonAmdocsAMIAndhraBankAppLabsApps
AssociatesAricentAshokLeylandAspireAtosOriginAxesBajajBankofMaharashtraBEL
BEMLBHELBirlaSoftBlueDartBlueStarBOBBPCLBPLBrakesBSNLCDOT
CadenceCalsoftCanaraBankCanarysCapgeminiCaritorCaterpillarCDACCGIChangepond
CienaCiscoCiticorpCMCConsagousConvergysCORDYSCromptonCSCCTSCummins
DellDeloitteDelphiTVSDeShawDeutscheDotcomDRDOEDSEILELGIELICO
ERICSSONEssarFidelityFlextronicsFreescaleFXLabsGAILGEGenpactGeodesic
GeometricGlobaledgeGlobalLogicGodrejGoogleGrapecityHALHCLHexawareHoneywell
HPHPCLHSBCHuaweiHughesIBMIBSICICIiGateImpetusiNautixIndianAirforce
IndianAirlinesInfosysInfotechIntecIntegraIntergraphIOCLiSOFTISROIttiamJSW
KeaneKenexaL&TL&TInfotechLGSoftLifetreeLionBridgeMahindraSatyamMastek
MavericMcAfeeMECONMicrosoftMindTreeMiraclesoftMistralMotorolaMphasisMTNL
NICNokiaSiemensNovellNTPCNucleusORACLEPatniPerotPolarisRamcoRobert
BoschSamsungSAPSapientSaskenSBISierraAtlanticSonataSonyIndiaSutherlandSyntel
TCSTechMahindraVeriFoneVirtusaWiproZensar.
Haveaquestion?

Askyourquestionnow!

Createyourownwebsite?

WebHostingServicesinIndia

20092016byIndiaBIXTechnologies.AllRightsReserved.|Copyright|TermsofUse&Privacy
Policy

Contactus:info@@indiab@ix.com Followusontwitter!