PD-94273B

IRG4MC50U

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features VCES = 600V

Electrically Isolated and Hermetically Sealed
VCE(on) max = 2.25V
Simple Drive Requirements G
Latch-proof @ VGE = 15V, IC = 27A
E
Fast Speed Operation 3 kHz - 8 kHz
High Operating Frequency n-channel
Switching-loss Rating includes all "tail" Losses
Ceramic Eyelets

Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions TO-254AA
Designed to be a "drop-in" replacement for equivalent
IR HiRel Generation 3 IGBT's

Insulated Gate Bipolar Transistors (IGBTs) from IR HiRel have higher usable current densities than comparable polar
transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide
substantial benefits to a host of high-voltage, high-current applications.

Absolute Maximum Ratings

Parameter Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25C Continuous Collector Current 35*

IC @ TC = 100C Continuous Collector Current 27

A
ICM Pulsed Collector Current 140

ILM Clamped Inductive Load Current 140

VGE Gate-to-Emitter Voltage 20 V

PD @TC = 25C Maximum Power Dissipation 150
W
PD @TC = 100C Maximum Power Dissipation 60
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range C
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 9.3 (Typical) g

Thermal Resistance
Parameter Min. Typ. Max. Units
RJC Junction-to-Case 0.83 C/W

* Current is limited by package.

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Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 1.0mA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 17 V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.56 V/C VGE = 0V, IC = 1.0mA
2.25 IC = 27A, VGE = 15V, See Fig. 2,5
VCE(on) Collector-to-Emitter Saturation Voltage 2.75 V IC = 35A, VGE = 15V, See Fig. 2,5
2.0 IC = 27A, VGE = 15V, TJ = 125C
VGE(th) Gate Threshold Voltage 3.0 6.0 V VCE = VGE, IC = 1.0mA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -14 mV/C VCE = VGE, IC = 250A
gfe Forward Transconductance 16 S VCE = 15V, IC = 27A
50 VGE = 0V, VCE = 480V
ICES Collector-to-Emitter Leakage Current A
2000 VGE = 0V, VCE = 480V, TJ = 125C
IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) 270 IC = 27A
Qge Gate-to-Emitter Charge (turn-on) 38 nC VGE = 15V See Fig. 8

Qgc Gate-to-Collector Charge (turn-on) 90 VCC = 480V

td(on) Turn-On delay time 75 TJ = 25C
tr Rise time 75 IC = 27A, VCC = 480V
ns
td(off) Turn-Off delay time 150 VGE = 15V, RG = 2.35,
tf Fall time 100 Energy losses include tail
Etotal Total Switching Loss 0.9 mJ See Fig. 10, 11, 13, 14
td(on) Turn-On delay time 75 TJ = 125C
tr Rise time 75 IC = 27A, VCC = 480V
ns
td(off) Turn-Off delay time 200 VGE = 15V, RG = 2.35
tf Fall time 150 Energy losses include tail
Etotal Total Switching Loss 2.0 mJ See Fig. 10, 11, 13, 14
Measured from Collector lead
(6mm/ 0.25in. from package) to
LC+LE Total Inductance 6.8 nH
Emitter lead (6mm / 0.25in.
from package)
Cies Input Capacitance 4150 VGE = 0V
Coes Output Capacitance 250 pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance 45 f = 1.0Mhz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See Fig. 13b).
VCC = 80%(VCES), VGE = 20V, L = 100H, RG = 2.35, (See Fig. 13a).
Pulse width 80s; duty factor 0.1%.
Pulse width 5.0s, single shot.

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80
Square wave:
Triangular wave:
60% of rated
voltage

Clamp voltage:
60 Ideal diodes
80% of rated
Load Current ( A )

40

For both:
Duty cycle : 50%
20 Tj = 125C
Tsink = 90C
Gate drive as specified
Power Dissipation = 37W
0
0.1 1 10 100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

1000 1000

I C, Collector-to-Emitter Current (A)

I C, Collector-to-Emitter Current (A)

100 100

TJ = 150 C

TJ = 25 C
10 10
TJ = 150 C
TJ = 25 C

V GE = 15V V CC = 50V
20s PULSE WIDTH 5s PULSE WIDTH
1 1
0.1 1 10 4 6 8 10 12
VCE, Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V)

Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics

60 3.0
V GE = 15V VGE = 15V
80s PULSE WIDTH
VCE , Collector-to Emitter Voltage (V)

IC = 54A
Maximum DC Collector Current (A)

50 LIMITED BY PACKAGE

40

30 2.0
IC = 27A

20
IC = 14A

10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C) T J , Junction Temperature (C)

Fig 4. Maximum Collector Current Vs. Fig 5. Collector-to-Emitter Voltage Vs.

Case Temperature Junction Temperature

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1

Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 t2
0.01 SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 6. Maximum Effective Transient Thermal Impedance, Junction-to-Case

8000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 27A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
6000
C, Capacitance (pF)

Cies 12

4000

2000 Coes
4
Cres

0 0
1 10 100 0 20 40 60 80 100 120
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)
Fig 7. Typical Capacitance Vs. Fig 8. Typical Gate Charge Vs.
Collector-to-Emitter Voltage Gate-to-Emitter Voltage
1.60 10
VCC = 480V RG = 2.35
VGE = 15V VGE = 15V IC = 54A
TJ = 25C VCC= 480V
Total Switching Losses (mJ)

Total Switching Losses (mJ)

I C = 27A
1.20

IC = 27A
1

0.80

IC = 14A

0.40 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G, Gate Resistance ( ) T J, Junction Temperature (C)

Fig 9. Typical Switching Losses Vs. Fig 10. Typical Switching Losses Vs.
Gate Resistance Junction Temperature
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5.0 1000
RG = 2.35 VGE = 20V
TJ = 150C T J = 125

IC, Collector-to-Emitter Current (A)

VGE = 15V
4.0
Total Switching Losses (mJ)

VCC = 480V

100
3.0 SAFE OPERATING AREA

2.0
10

1.0

0.0 1
10 20 30 40 50 60 0.1 1 10 100 1000

IC , Collector Current (A) VDS , Drain-to-Source Voltage (V)

Fig 11. Typical Switching Losses Vs. Fig 12. Turn-Off SOA
Collector-to-Emitter Current

L D.U.T.
VC *
50V
1000V

* Driver same type as D.U.T.; Vc = 80% of Vce(max)

* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.

Fig 13a. Clamped Inductive Load Test Circuit Fig 13b. Pulsed Collector Current Test Circuit

IC
L
Driver* D.U.T.
VC
50V
1000V

* Driver same type as D.U.T., VC = 720V

Fig 14a. Switching Loss Test Circuit Fig 14b. Switching Loss Waveforms

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Case Outline and Dimensions TO-254AA

0.12 [.005]
13.84 [.545] 6.60 [.260]
3.78 [.149] 13.59 [.535] 6.32 [.249]
3.53 [.139] 1.27 [.050]
1.02 [.040]
A

20.32 [.800]
17.40 [.685] 20.07 [.790] B
16.89 [.665] 13.84 [.545]
13.59 [.535]

1 2 3

C 14.48 [.570]
0.84 [.033]
12.95 [.510] MAX.

1.14 [.045]
3X
0.89 [.035] 3.81 [.150]
3.81 [.150]
2X 0.36 [.014] B A

NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. PIN ASSIGNMENTS
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 1 1= =COLLECTOR
DRAIN
3. CONTROLLING DIMENSION: INCH. 2 2= =EMITTER
SOURCE
4. CONFORMS TO JEDEC OUTLINE TO-254AA. 3 3= =GATE
GATE

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.

IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000
Data and specifications subject to change without notice.

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IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.

With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.

In addition, any information given in this document is subject to customers compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customers product and any use of
the product of Infineon Technologies in customers applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customers technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.

For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).

WARNING

Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.

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