PD -91794

IRG4BC20SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

Extremely low voltage drop 1.4Vtyp. @ 10A VCES = 600V

S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives. VCE(on) typ. = 1.4V
Very Tight Vce(on) distribution G
IGBT co-packaged with HEXFREDTM ultrafast, @VGE = 15V, IC = 10A
ultra-soft-recovery anti-parallel diodes for use E
in bridge configurations n-cha nnel
Industry standard D2Pak package

Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Lower losses than MOSFET's conduction and
Diode losses D 2 Pak
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25C Continuous Collector Current 19
IC @ TC = 100C Continuous Collector Current 10
ICM Pulsed Collector Current 38 A
ILM Clamped Inductive Load Current 38
IF @ TC = 100C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 38
VGE Gate-to-Emitter Voltage 20 V
PD @ TC = 25C Maximum Power Dissipation 60
W
PD @ TC = 100C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range C

Thermal Resistance
Parameter Typ. Max. Units
RqJC Junction-to-Case - IGBT 2.1
RqJC Junction-to-Case - Diode 3.5 C/W
RqJA Junction-to-Ambient ( PCB Mounted,steady-state)* 80
Wt Weight 1.44 g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
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IRG4BC20SD-S

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250A
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage 0.75 V/C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage 1.40 1.6 IC = 10A VGE = 15V
1.85 V IC = 19A See Fig. 2, 5
1.44 IC = 10A, TJ = 150C
VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250A
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, IC = 250A
gfe Forward Transconductance 2.0 5.8 S VCE = 100V, IC = 10A
ICES Zero Gate Voltage Collector Current 250 A VGE = 0V, VCE = 600V
1700 VGE = 0V, VCE = 600V, TJ = 150C
VFM Diode Forward Voltage Drop 1.4 1.7 V IC = 8.0A See Fig. 13
1.3 1.6 IC = 8.0A, TJ = 150C
IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) 27 40 IC = 10A
Qge Gate - Emitter Charge (turn-on) 4.3 6.5 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) 10 15 VGE = 15V
td(on) Turn-On Delay Time 62 TJ = 25C
tr Rise Time 32 ns IC = 10A, VCC = 480V
td(off) Turn-Off Delay Time 690 1040 VGE = 15V, RG = 50W
tf Fall Time 480 730 Energy losses include "tail" and
Eon Turn-On Switching Loss 0.32 diode reverse recovery.
Eoff Turn-Off Switching Loss 2.58 mJ See Fig. 9, 10, 11,18
Ets Total Switching Loss 2.90 4.5
td(on) Turn-On Delay Time 64 TJ = 150C, See Fig. 10,11, 18
tr Rise Time 35 ns IC = 10A, VCC = 480V
td(off) Turn-Off Delay Time 980 VGE = 15V, RG = 50W
tf Fall Time 800 Energy losses include "tail" and
Ets Total Switching Loss 4.33 mJ diode reverse recovery.
LE Internal Emitter Inductance 7.5 nH Measured 5mm from package
Cies Input Capacitance 550 VGE = 0V
Coes Output Capacitance 39 pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance 7.1 = 1.0MHz
trr Diode Reverse Recovery Time 37 55 ns TJ = 25C See Fig.
55 90 TJ = 125C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current 3.5 5.0 A TJ = 25C See Fig.
4.5 8.0 TJ = 125C 15 VR = 200V
Qrr Diode Reverse Recovery Charge 65 138 nC TJ = 25C See Fig.
124 360 TJ = 125C 16 di/dt = 200As
di(rec)M/dt Diode Peak Rate of Fall of Recovery 240 A/s TJ = 25C See Fig.
During tb 210 TJ = 125C 17
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 IRG4BC20SD-S

3.0
F or b oth:
D uty c y c le : 50 %
T J = 12 5 C
T sink = 90 C
LOAD CURRENT (A)

G a te d riv e a s s pe c ified
2.0 P ow er D is s ipation = 1.7W

S q u a re w a v e :
60% of rated
voltage

1.0 I

Id e a l d io d es

0.0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)

TJ = 150 o C

10 10

TJ = 150 C
TJ = 25 o C
TJ = 25 C

V GE = 15V V CC = 50V
20s PULSE WIDTH 5s PULSE WIDTH
1 1
0.0 1.0 2.0 3.0 4.0 5 6 7 8 9 10 11 12
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC20SD-S

20 3.0
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

15 IC = 20 A

10 2.0

5 IC = 10 A

IC = 5.0
5 AA

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( C) TJ , Junction Temperature ( C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

0.50
1

0.20

0.10

0.05 P DM
0.1
0.02 t1
0.01 SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4BC20SD-S

1000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 10A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

800 Coes = Cce + Cgc
16
C, Capacitance (pF)

Cies
600 12

400 8

Coes
200 4
Cres

0 0
1 10 100 0 5 10 15 20 25 30
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

3.0 100
V CC = 480V RG = 50W
V GE = 15V VGE = 15V
TJ = 25 C VCC = 480V
I C = 10A
Total Switching Losses (mJ)
Total Switching Losses (mJ)

IC = 20 A
2.9 10

IC = 10 A

IC = 5A

2.8 1

2.7 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RGR, Gate Resistance TJ , Junction Temperature ( C )
G, Gate Resistance (W )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4BC20SD-S
14
RG = 50W 100
VGE = 20V
TJ = 150 C
T J = 125 o C

I C , Collector-to-Emitter Current (A)

12 VCC = 480V
VGE = 15V
Total Switching Losses (mJ)

10

10
6

SAFE OPERATING AREA

0 1
0 4 8 12 16 20 1 10 100 1000
I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )

10

TJ = 150C

TJ = 125C

TJ = 25C
1

0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
F o rw a rd V o lta g e D ro p - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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 IRG4BC20SD-S

100 100
VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 C T J = 1 2 5 C
T J = 2 5 C T J = 2 5 C
80

IF = 16A
60

I IR R M - (A )
t rr - (n s)

I F = 8.0A
I F = 16A
10

I F = 8.0 A
40

I F = 4.0A
I F = 4.0A
20

0 1
100 1000 100 1000
d i f /d t - (A / s) d i f /d t - (A / s)

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
500 10000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 C T J = 1 2 5 C
T J = 2 5 C T J = 2 5 C
400
d i(re c)M /d t - (A / s)
Q R R - (n C )

300

I F = 16A I F = 4.0A
1000

I F = 8.0 A
200
I F = 16A
I F = 8.0A

100

IF = 4.0A

0 100
100 1000 100 1000
d i f /d t - (A / s) d i f /d t - (A / s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4BC20SD-S

Same type
device as
D .U.T.

430F 90%
80%
of Vce D .U .T.
Vge 10%

VC
90%
t d(off)

10%
IC 5%
Fig. 18a - Test Circuit for Measurement of tr tf
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5s
E on Eoff
E ts = (Eon +Eoff )

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O LT A G E D .U .T .
Ic
trr
Q rr =
tx
Ic dtdt
id

10% + V g
+V g
tx
10% Irr
10% V c c
Vcc
D U T V O LT A G E
Vce
AND CURRENT V pk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
D IO D E R E C O V E R Y
W AVEFORMS
5% V c e
td(on) tr

t2
E on = VVce
c e ieIcdt dt

t4
t1 E rec = VVd
d idIc
dt dt
t3
t1 t2 D IO D E R E V E R S E
RECOVERY ENERG Y

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr
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 IRG4BC20SD-S

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O LT A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
R L=
2 X IC @25C
1000V Vc*
0 - 480V
50V
600 0 F
100 V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

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IRG4BC20SD-S

Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10H, RG = 50W (figure 19)
Pulse width 80s; duty factor 0.1%.
Pulse width 5.0s, single shot.

D2Pak Package Outline

10.54 (.415) -B- 10.16 (.400)

10.29 (.405) 4.69 (.185) REF.
1.40 (.055) 4.20 (.165)
-A- 1.32 (.052)
M A X. 1.22 (.048)
2
6.47 (.255)
6.18 (.243)

1.78 (.070) 15.49 (.610) 2.79 (.110)

1.27 (.050) 1 3 14.73 (.580) 2.29 (.090)

5.28 (.208) 2.61 (.103)

4.78 (.188) 2.32 (.091)

8.89 (.350)
1.40 (.055) 1.39 (.055) REF.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1.14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 (.200) 0.25 (.010) M B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T

11.43 (.450)

N O TE S : LE A D A S S IG NM E N TS 8.89 (.350)
1 D IM E N S IO N S A F T E R S O LD E R D IP . 1 - G A TE
2 - D R A IN 17.78 (.700)
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 - S O U RC E
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
3.81 (.150)

2.54 (.100)
2.08 (.082) 2X
2X

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http://www.irf.com/ Data and specifications subject to change without notice. 9/98
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/