Bridge Diode Single In-line Package

OUTLINE
D15XB Package5S Unit : mm
Weight : 7.1g
typ.

800V 15A
Control No.

Type No.
30 4.6
Date code
SIP
UL E142422 D15XB 60 0264

20
IFSM
+

Feature 17.5
Thin-SIP
UL E142422

Large Io
High VoltageLarge IFSM
Web
High Thermal Radiation

'PS
EFUBJMT
PG
PVUMJOF
EJNFOTJPOT
SFGFS
UP
PVS
XFC
TJUF
PS
UIF
4FNJDPOEVDUPS

4IPSU
'PSN
$BUBMPH

"T
GPS
UIF
NBSLJOH
SFGFS
UP
UIF
TQFDJDBUJPO
i.BSLJOH

5FSNJOBM
$POOFDUJPOu

RATINGS
Absolute Maximum Ratings Tc = 25unless otherwise speci

Item Symbol Conditions Type No. D15XB20 D15XB60 D15XB80 Unit

Storage Temperature Tstg 40150

Operation Junction Temperature Tj 150

Maximum Reverse Voltage VRM 200 600 800 V

50Hz With heatsink Tc = 100 15
Average Rectified Forward Current IO 50Hz sine wave, A

Resistance load
Without heatsink
Ta = 25 3.2
50Hz Tj = 25
Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 200 A
2
It 1mst10msTj=25 110 A2s
Current Squared Time per diode
AC
Dielectric Strength Vdis Terminals to Case, AC 1 minute 2.5 kV
0.5 Nm
Mounting Torque TOR Recommended torque : 0.5 Nm 0.8 Nm

Electrical Characteristics Tc = 25unless otherwise speci

,
Forward Voltage VF IF=7.5A, Pulse measurement, per diode
MAX
1.1 V

Reverse Current IR VR=VRM, ,
Pulse measurement, per diode
MAX 10 A

jc Junction to Case, With heatsink
MAX
1.5

Thermal Resistance jl Junction to Lead, Without heatsink
MAX 5 /W

ja Junction to Ambient, Without heatsink
MAX
22

76 J534
Thin SIP UL Bridge D15XB
CHARACTERISTIC DIAGRAMS

Sine wave 50Hz

)[
TJOF
XBWF
JT
VTFE
GPS
NFBTVSFNFOUT

Typical
4FNJDPOEVDUPS
QSPEVDUT
HFOFSBMMZ
IBWF
DIBSBDUFSSJTUJD
WBSJBUJPO
5ZQJDBM
JT
B
TUBUJTUJDBM
BWFSBHF
PG
UIF
EFWJDFhT
BCJMJUZ

J534 77
Mouser Electronics

Authorized Distributor

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Shindengen:
D15XB80-4101 D15XB60-7000 D15XB60-7101 D15XB60-4101 D15XB80-7101 D15XB80-7000 D15XB60-4000
D15XB80-4000