2SB647, 2SB647A

Silicon PNP Epitaxial

Application

Low frequency power amplifier

Complementary pair with 2SD667/A

Outline

TO-92MOD

1. Emitter
2. Collector
3. Base

3
2
1

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 2SB647, 2SB647A

Absolute Maximum Ratings (Ta = 25C)

Item Symbol 2SB647 2SB647A Unit
Collector to base voltage VCBO 120 120 V
Collector to emitter voltage VCEO 80 100 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 1 1 A
Collector peak current iC(peak) 2 2 A
Collector power dissipation PC 0.9 0.9 W
Junction temperature Tj 150 150 C
Storage temperature Tstg 55 to +150 55 to +150 C

Electrical Characteristics (Ta = 25C)

2SB647 2SB647A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 120 120 V I C = 10 A, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 80 100 V I C = 1 mA, RBE =
breakdown voltage
Emitter to base breakdown V(BR)EBO 5 5 V I E = 10 A, IC = 0
voltage
Collector cutoff current I CBO 10 10 A VCB = 100 V, IE = 0
1
DC current transfer ratio hFE1* 60 320 60 200 VCE = 5 V,
I C = 150 mA*2
hFE2 30 30 VCE = 5 V,
I C = 500 mA*2
Collector to emitter VCE(sat) 1 1 V I C = 500 mA,
saturation voltage I B = 50 mA*2
Base to emitter voltage VBE 1.5 1.5 V VCE = 5 V,
I C = 150 mA*2
Gain bandwidth product fT 140 140 MHz VCE = 5 V, IC = 150 mA
Collector output capacitance Cob 20 20 pF VCB = 10 V, IE = 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by h FE1 as follows.
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2. Pulse test
B C D
2SB647 60 to 120 100 to 200 160 to 320
2SB647A 60 to 120 100 to 200

2
 2SB647, 2SB647A

Maximum Collector Dissipation

Curve Typical Output Characteristics
1.2 1.0
120
Collector power dissipation PC (W)

0
10
0.8 80

Collector current IC (A)

60
0.8
0.6 40
30 20

10
0.4 5
0.4 2

0.2 PC 1
= 0.
9W 0.5mA
IB = 0
0 50 100 150 0 2 4 6 8 10
Ambient Tmperature Ta (C) Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio

Typical Transfer Characteristics vs. Collector Current
500 600
VCE = 5 V
VCE = 5 V Pulse
200
DC current transfer ratio hFE

Pulse 500
100
Collector current IC (mA)

400
50
5C

300 Ta = 75C
Ta = 7
25

20
25

10 25
200
5 25
100
2
1 0
0 0.2 0.4 0.6 0.8 1.0 1 3 10 30 100 300 1,000
Base to Emitter Voltage VBE (V) Collector Current IC (mA)

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3
2SB647, 2SB647A
Saturation Voltage
vs. Collector Current
0.6 1.2

Collector to emitter saturation voltage VCE(sat) (V)

Base to emitter saturation voltage VBE(sat) (V)

IC = 10 IB
Pulse
0.5 1.0

0.4 0.8 VBE(sat) Ta = 25C

25
75
0.3 0.6

0.2 0.4 Ta = 75C

25
0.1 0.2 25
VCE(sat)

0 0
1 3 10 30 100 300 1,000
Collector Current IC (mA)

Gain Bandwidth Product Collector Output Capacitance vs.

vs. Collector Current Collector to Base Voltage
240 200
Collector output capacitance Cob (pF)

VCE = 5 V f = 1 MHz
Gain bandwidth product fT (MHz)

IE = 0
200 100

50
160

120 20

80 10

5
40

0 2
10 30 100 300 1,000 1 2 5 10 20 50 100
Collector Current IC (mA) Collector to Base Voltage VCB (V)

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4
 Unit: mm

4.8 0.3 3.8 0.3

8.0 0.5
2.3 Max
0.65 0.1
0.75 Max
10.1 Min
0.60 Max
0.7

0.5 0.1 0.5

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1.27
2.54

Hitachi Code TO-92 Mod

JEDEC
EIAJ Conforms
Weight (reference value) 0.35 g
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