8/16/2016 BARITTDiode|BARrierInjectionTransitTime|Tutorial

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BARITT Diode Tutorial

- the BARITT diode or Barrier Injection Transit Time diode has many similarities with the
IMPATT and is used in specialist microwave RF signal applications but with lower noise.

IN THIS SECTION

BARITT diode tutorial (basics-tutorial.php) Other diodes (../diodes/types-of-diodes.php)

The BARITT diode or Barrier Injection Transit Time diode, bears many similarities to the more widely used
IMPATT diode.

Like the more familiar IMPATT diode, the BARITT is used in microwave signal generation, often in applications
including burglar alarms and the like, where it can easily produce a simple microwave signal with a relatively low
noise level.

BARITT basics
The BARITT is very similar, in many respects to the IMPATT, but the main difference is that the BARITT diode uses
thermionic emission rather than avalanche multiplication.

One of the advantages of using this form of emission is that the process is far less noisy and as a result the
BARITT does not suffer from the same noise levels as does the IMPATT.

Essentially the BARITT diode consists of two back to back diodes. When a potential is applied across the device,
most of the potential drop occurs across the reverse biased diode.

If the voltage is then increased until the edges of the depletion region meet, then a condition known as punch
through occurs.

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8/16/2016 BARITTDiode|BARrierInjectionTransitTime|Tutorial

Graphical representation of the BARITT diode IV characteristic

It can be seen within the diagram that the punch through voltages, Vpt are different for the two directions. This
difference results from asymmetry in the two junctions and can be controlled during the manufacture stages of
the diode. They can be made to be different or almost the same.

Graphical representation of the BARITT diode voltage and current waveforms

After a charge is injected, it travels to the substrate with the saturation velocity.

As seen from the diagram, it can be seen that the injection current is in phase with the RF voltage waveform. This
results in a non-ideal current waveform situation which flows in the positive resistance region and therefore
losses are higher in the BARITT than in an IMPATT.

The terminal current pulse width is determined by the transit time which is L/vsat (Where the electrodes are
spaced L apart and vsat is the saturation velocity). This constitutes around three quarters of the cycle.

In view of the physical restraints of the BARITT diode, the power capability decreases approximately as the
square of the frequency because higher frequencies require a smaller separation between the electrodes and
this in turn limits the voltages that can be used.Also the efficiency falls away with increasing frequency. For low
frequency operation it may be around 5% or a little more.

By Ian Poole (https://plus.google.com/104687638164370436625?rel=author)

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MORE COMPONENT TYPES

Diode types (/info/data/semicond/diodes/types-of-diodes.php)

PN junction (/info/data/semicond/diodes/pn-junction-diode-basics-tutorial.php)
Diode specifications (/info/data/semicond/diodes/specifications-parameters-ratings-characteristics.php)
Gunn diode (/info/data/semicond/gunndiode/gunndiode.php)
IMPATT diode (/info/data/semicond/impatt/impatt-diodes.php)
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Schottky diode (/info/data/semicond/schottky_diode/schottky_barrier_diode.php)
Step recovery diode (/info/data/semicond/diodes/step-recovery-diode-srd.php)
Tunnel diode (/info/data/semicond/tunneldiode/tunneldiode.php)
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Zener diode (/info/data/semicond/zener-voltage-reference-diodes/basics-tutorial.php)
Light emitting diode (/info/data/semicond/leds-light-emitting-diodes/technology-tutorial.php)
BARITT diode (/info/data/semicond/baritt-diode/basics-tutorial.php)
Backward diode (/info/data/semicond/tunneldiode/backward-diode.php)

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