Registration No. Registration No.

College Roll No. College Roll No.

Total no of printed pages: 01 B.E 10EC56 Total no of printed pages: 01 B.E 10EC56

DEPARTMENT OF ELECTRONICS AND COMMUNICATION DEPARTMENT OF ELECTRONICS AND COMMUNICATION

ENGINEERING ENGINEERING
SEMESTER: 5RD SEMESTER: 5RD
1ST MID SEMESTER EXAMINATION 2017 2018 1ST MID SEMESTER EXAMINATION 2017 2018
FUNDAMENTALS OF CMOS VLSI FUNDAMENTALS OF CMOS VLSI

Time: 01 Hr SET A Full Mark 30 Time: 01 Hr SET A Full Mark 30

The figures in the right-hand margin indicate marks The figures in the right-hand margin indicate marks

PART A PART A
Answer the following questions precisely: [5X2] Answer the following questions precisely: [5X2]

1. Give the basic DC equations used in different regions of operation of MOS 1. Give the basic DC equations used in different regions of operation of MOS
device. device.

2. Explain with necessary circuit diagram, the body effect 2. Explain with necessary circuit diagram, the body effect

3. List down the different eras of VLSI evolution. 3. List down the different eras of VLSI evolution.

4. Give the statement of Moores law. 4. Give the statement of Moores law.

5. Compare MOSFET with BJT 5. Compare MOSFET with BJT

PART B PART B
Answer Any TWO questions precisely: [2X10] Answer Any TWO questions precisely: [2X10]

6. Discuss the nmos enhancement mode transistor for various conditions of

Vds. 6. Discuss the nmos enhancement mode transistor for various conditions of
Vds.
7. Elaborate the concept of p well fabrication with neat sketches.
7. Elaborate the concept of p well fabrication with neat sketches.
8. Explain in detail the threshold voltage with relevant expression.
8. Explain in detail the threshold voltage with relevant expression.