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AO4402

20V N-Channel MOSFET

General Description Product Summary

The AO4402 combines advanced trench MOSFET VDS 20V


technology with a low resistance package to provide ID (at VGS=4.5V) 20A
extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) < 5.5m
and battery protection applications.
RDS(ON) (at VGS=2.5V) < 7m

100% UIS Tested


100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G
G
S S
S
S

Absolute Maximum Ratings TA=25C unless otherwise noted


Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 12 V
Continuous Drain TA=25C 20
ID
Current TA=70C 16 A
C
Pulsed Drain Current IDM 140
Avalanche Current C IAS, IAR 57 A
Avalanche energy L=0.1mH C EAS, EAR 162 mJ
TA=25C 3.1
PD W
Power Dissipation B TA=70C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 31 40 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 59 75 C/W
Maximum Junction-to-Lead Steady-State RJL 16 24 C/W

Rev 1: Nov 2010 www.aosmd.com Page 1 of 6


AO4402

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 20 V
VDS=20V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS= 12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 0.5 1 1.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 140 A
VGS=4.5V, ID=20A 4.6 5.5
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 5.8 7
VGS=2.5V, ID=18A 5.5 7 m
gFS Forward Transconductance VDS=5V, ID=20A 105 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 1 V
IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3080 3860 4630 pF
Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 520 740 960 pF
Crss Reverse Transfer Capacitance 350 580 810 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.6 1.4 2.1
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge 28 36 43 nC
Qgs Gate Source Charge VGS=10V, VDS=10V, ID=20A 7 9 11 nC
Qgd Gate Drain Charge 7 12 17 nC
tD(on) Turn-On DelayTime 7 ns
tr Turn-On Rise Time VGS=10V, VDS=10V, RL=0.5, 8 ns
tD(off) Turn-Off DelayTime RGEN=3 70 ns
tf Turn-Off Fall Time 18 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/s 13 17 20 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 29 36 43 nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.Maximum avalanche current limited by tester capability.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AO4402

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 80

VDS=5V
80
60

60
ID (A)

ID(A)
40
40
125C 25C
20
20

0 0
0 1 2 3 4 5 0.5 1 1.5 2 2.5

VDS (Volts) VGS(Volts)


Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.4

Normalized On-Resistance
8
VGS=2.5V
1.2
RDS(ON) (m )

6
17
5
4 2
VGS=4.5V 1
10
2

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
0
ID (A) Temperature (C) 18
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage (Note E) (Note E)

10 1.0E+02
ID=20A
9 1.0E+01
40
8 1.0E+00
RDS(ON) (m )

7 1.0E-01
IS (A)

125C
6 1.0E-02

5 1.0E-03

4 1.0E-04
25C
3 1.0E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
(Note E) Figure 6: Body-Diode Characteristics (Note E)

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AO4402

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


7000
10
6000
VDS=10V
8 ID=20A
5000

Capacitance (pF)
VGS (Volts)

4000
6

3000

4
2000 Coss

2 1000

0 Crss
0 0 5 10 15 20
0 20 40 60 80 100 VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics

1000.0 1000.0
IAR (A) Peak Avalanche Current

100.0
ID (Amps)

10.0
100.0
1.0
10ms

0.1

0.0
10.0
0.01 0.1 1 10 100
1 10 100 1000
s)
Time in avalanche, tA (
Figure 9: Single Pulse Avalanche capability (Note VDS (Volts)
C)

10000
TA=25C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Rev 1: Nov 2010 www.aosmd.com Page 4 of 6


AO4402

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
Z JA Normalized Transient

TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse


Thermal Resistance

1 RJA=75C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)


Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 1: Nov 2010 www.aosmd.com Page 5 of 6


AO4402

Gate Charge Test Circuit & Waveform


Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms


L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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