Beruflich Dokumente
Kultur Dokumente
Year Technology 2002 2003 2004 2005 2006 2007 2008 2009 2012 2015 2018
Node 130nm 100nm 90nm 80nm 70nm 65nm 55nm 50nm 32nm 25nm 18nm
Maximum allowable
electrostatic field on 150 V/cm 125 V/cm 100 V/cm 90 V/cm 80 V/cm 70 V/cm 60 V/cm 50 V/cm 35 V/cm 25 V/cm 18 V/cm
facility surfaces
Maximum allowable
2.0 nC 1.5 nC 1.0 nC 0.8 nC 0.65 nC 0.5 nC 0.35 nC 0.25 nC 0.125 nC 0.10 nC 0.08 nC
static charge on
(200V) (150V) (100V) (80V) (65V) (50V) (35V) (25V) (12.5V) (10V) (8V)
devices
Maximum allowable
electrostatic field on 150 V/cm 125 V/cm 100 V/cm 90 V/cm 80 V/cm 70 V/cm 60 V/cm 50 V/cm 35 V/cm 25 V/cm 18 V/cm
wafer and
photomask surfaces
Commander Brian Martinez USN
Note: Person Grounded by Wriststrap
8,330 volts
FoD
ESD Foams
Antistatic Polyurethane (Flexible Polyether)
Black Conductive Dipped Foam
Excessive Carbon Rub off
Conductivity can vary from batch to batch
Not chemical resistant - does not accept components well
Pink Surfactant Antistatic Foam
Depends upon moisture for performance
Conductive Polyethylene (Closed Cell Cross linked Polyethylene)
Use in some clean rooms and little rub off
Very conductive grades and Volume Resistivity
Good chemical resistance and permanent conductive
Out of Spec Black Conductive
Polyethylene Carbon Dipped
Foam Particles Shedding