GaN Power HEMTs Thermal Problems Low-Cost Approaches

Recent Advances in GaN Power HEMTs
Related to Thermal Problems

and Low-Cost Approaches
WW05
Kazuya Yamamoto1, Hiroshi Okazaki2,
Kenjiro Nishikawa3
1Mitsubishi Electric Corp., 2NTT DoCoMo R&D Labs,
3Kagoshima University
Yamamoto.Kazuya@bk.MitsubishiElectric.co.jp
Slide 1
of 190
Thermalmanagementofelectronics:
MeasurementandthelimitsofGaN
ondiamondelectronics
ProfessorMartinKuball
UniversityofBristol
Martin.Kuball@bristol.ac.uk
WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide1

Approaches of60
Outline
GaN electronics
Thermalmanagement
challenges
Thermalmaterialsand
devicecharacterization
Ultrahighpower
electronics:GaNon
DiamondHEMTs
Conclusions

Approaches of60
MicrowaveGaN Electronics
Youcanbuythisalready
www.fujitsu.com (GaNonSiC,GaNonSi)!!!

Approaches of60
Thermalmanagement
ElectronicWarfare
Challenges: New
materialanddevice
design;howto
measurechannel
temperatureofa
device?
DirectedEnergySystems RadarSystems

Approaches of60
Performanceandreliability
Impactionization
Bulktrapgeneration
Interfacetrapgeneration
Killat etal.,CompoundSemiconductor
Jan/Feb2013
Devicedegradationistemperatureandelectric
fieldaccelerated.

Approaches of60
Electricfield&temperature
Sourcefieldplate
Passivation Electricfieldscanbeshapedusinge.g.
Gate
Drain
fieldplates,Tshapedgate,slantedgatei.e.,
AlGaN electricfielddrivendevicedegradationcan
Channel
GaN belimited.
Nucleationlayer
4H SiC
Temperatureisthemainfactor
atpresentlimitingthereliabilityie determiningthemaximum
possiblepowerdensity.
Approaches of60
GaN HEMTthermalhistory
Workedexample20W10GHzsolidstatemodule
GaAs based module

Cellsize
determined PRESENTLY
byoperating 4xreduction
frequency insize
4.47W 5W
0.5dB
manifold
loss
GaN HEMT GaN

Vds=28V(5W/mm)
1x1mmtransistor based
Zopt=50ohm //0.2pF module
GaAspHEMT
Vds=8V(0.9W/mm) GaAs(0.5W/mK)thermalconductivitymuch Isthis
4x1.38mmtransistor
Zopt=4.5ohm //1.1pF lowerthanGaNonSiC (1.6;4.5W/mK). thelimit

Approaches of60
Channeltemperature
Devicedegradationdeterminedbuytemperature
Rateofdevicefailure exp(Ea/kBT), withEa =activationenergy
T=channeltemperature(ortemperatureat
specificlocationinsidechannel).
Gate metal diffusion
J. A. del Alamo et al., IEEE IEDM 2004

Approaches of60
Whywastewithexperiment
Heaterwidth? Icandoathermalsimulation
thissavesmealotofmoneyandtime
Thermal
conductivity
ofmaterial
andvariation
Heathastotraverseinterfaces throughlayer(s)

Approaches of60
IRThermography
Basicprinciple: MeasuresintensityofthermalIRradiation
Measuredintensity:
with StefanBoltzmannconstant
T2
T 2 >T
Intensity
T1
10m 1m
Wavelength
Often35m or810m spectralwindowisused.
Fast,but diffractionlimitedspatialresolutionof>310m.

Approaches of60
IRThermography
Limitedlateralresolution: Typicalnodepthresolution
IR: (foruncoateddevices):
310m
often25m
IRmeasuresatemperature
averagewhichisoftennot
easytodefine.

Approaches of60
ElectricalMethods
Basicprinciple: QuantifieschangesinIVcurvewithtemperaturerise,
e.g.,achangeinsaturationcurrent.
E.g.Kuzmik etal,IEEETrans.ElectronDev.481496(2002);McAllisteretal.,J.Vac.Sci.Techn.
24,624(2006);Simms,IEEETrans.ElectronDev.55,478(2008).
Advantage: Useselectricaltestequipmentstandardinmostlaboratories;
measureshoweveraveragetemperatureoverwholedevice.
Approaches of60
Ramanthermography
Basedonthatvibrationsofatoms(phonons)
ofmaterialsaretemperaturedependent
off
on
Spatialresolution 0.50.7m.
Temperatureresolution<25C.
Timeresolution 10ns.
Easytouse.

Approaches of60
TheRamanmethod
Photonsofalaserhitdevice
Scatteredlight
contains
threedifferent
wavelengths
Photonenergychange
Lightofreduced Raman
Lightofsame photonenergy probes
photonenergy (photoncreateda typically
aslaser vibrationofatoms) thislight
Lightofincreasedphotonenergy
(photonabsorbsavibrationofatoms) M.Kuball,Surf.InterfaceAnal.31,987(2001).

Approaches of60
AtypicalRamanspectrum
SiC
GaN
GaN
GaN
SiC
Temperatureinalldifferentmateriallayersinadevice
canbeprobedsimultaneously:
GaN,SiC temperatureinGaN/SiC HEMT,
AlGaAs,GaAstemperatureinGaAspHEMT,


Approaches of60
RamanvsIRthermography
AlGaN/GaN HEMTonSiC
Raman
gate
160
Temperature [oC]
IR
3D sim.
120 source drain

TraditionallyusedIRunderestimates
temperatureby40%
80
M.Kuballetal.,
CSICS2007
-10 -5 0 5 10
Position [m]
Spatialresolution:Raman 0.50.7m; IR 7m.

Approaches of60
Importanceofinterfaces
180
160 US,Europe,Japan

6
140 GaN
Thermalresistanceofinterface
CS-6
Temperature rise ( C)
120
Extra channel temperature rise

5
o
SiC URI-4
100 CS-3
30%
TBR x10-8 (m2K/W)

80
4
60 CS-4
Thermal URI-3a CS-2
40
BoundaryResistance 3 CS-5
20 URI-2
(TBR) 20%
0 URI-3b
2
GaN SiC CS-1
0.1 1 10 100 1000
10%
Depth (m) 1 Measurement
URI-1 accuracy
5%
100 150 200 250
Manoi etal.,IEEEElectronDev.Lett31,1395(2010).
Interface temperature (oC)

Approaches of60
Howtoobtaintimeresolution
ON OFF
Pulsed
laser
source Bestever
reported
IRtime
resolution
Timeresolution:10ns.
Spatialresolution:0.5m.
Orderofmagnitude faster andmoreaccurate

thanotherthermographytechniques.
Riedel et al., IEEE Electron Dev. Lett. 29, 416 (2008); Kuball et al. IEEE Electron Dev. Lett. 28, 86 89 (2007).

Approaches of60
TimeresolvedRaman
S D S
Abilitytotracetemperaturewith10ns D S
100m
timeresolution
G 25m
Temperature
splits
Identical
increase
Timedependent
thermalcrosstalk
Manoi etal,SolidStateElecronics 57,14(2011).

Approaches of60
Canoneimproveresolution?
(a) (b)
Source Gate Drain Source Gate Drain
SolidImmersionLens(SIL)
GaN

SiC n=2.6
R
SIL
air
(c)
10
Lateral: heat
widefield 0.6 source drain
8 confocal
Lateral resolution [m]
Axial resolution [m]
Axial:
widefield
180
Temperature [ C]
6 Designed confocal 0.4

o
SIL
4 SiC SIL limit

0.2 J.W.Pomeroy
160
2
Upper GaN (Exp.)
etal.,J.Appl.
Lower GaN (Exp.) Phys.118,
gate Average GaN (Sim.)
0 0.0 144501(2015)
1 2
N.A. 2 3 4
Lateral position [m]
Approaches of60
DCvsRFtemperatures
Junctiontemperature
256C 225C 175C
1E+8
1E+7
1E+6
1E+5
RFtest
MTTF[hrs]
Ea=1.92eV
Ea=1.82eV
1E+4
1E+3
DCtest
1E+2
1E+1
18 19 20 21 22 23 24 25 26 27 28
1/KT[1/eV]
ActivationenergydeterminedinDCandRFlifetimetestsimilar.
J.W.Pomeroy,MicroelectronicsReliability55,2505(2015).

Approaches of60
However,for>100V
5.9W/mm
average
100V
J.W.Pomeroyetal.ROCS2015.

Approaches of60
Howtodoitinreallife?
top
Measure
Raman
from
bottom
Canbeperformedonwafer or
inpackage.Onlyconditionisthat
thesemiconductorofthedeviceis
opticallyvisible.

Approaches of60
Temperaturemeasured
Foropticallytransparant materials Averageoftemperature
insmallvolume
Gate N
Ga
2 m
0.75 m C
Si
0.75 m
Foropticallynon transparantmaterials Smallsurfacearea

Temperatureaverageover
0.75mx0.75mx50nm
(forGaAs)
Itiswelldefinedoverwhichareaanaverage
oftemperatureismeasured andshouldbe
comparedasubsequentthermalsimulation!!!
Approaches of60
Simulationtoaidexperiment
Pomeroyetal,IMS2012
IfthereisaTgateorfieldplate,weconsiderthisbyusingthermalsimulation,as
thosescreenthehotspot.
Approaches of60
Methodologydeveloped
180
Laser 160
light Ungateddevice Step2 Wefitinthermal
Ohmic 140
Ohmic simulationanyresistancesat
contact contact
internalchipinterfaces.
Temperature rise ( C)
120
o
AlGaN 100
Depth
Step1 Wefitinthermalsimulation
80
GaN scan thegradientintemperaturethroughSiC
60
40
toextractSiC thermalconductivity.
20
0
Extractkeymaterialparameters
GaN SiC
0.1 1 10 source 100
gate 1000
drain
Depth (m) Step3 Wemeasuretemperatureinactive
HEMT GaN depth deviceregion anddetermine
EdgeofChip(EoC)temperature (temperature
SiC
500mawayfromdevice).
Step4 Wefitthermal
simulationtoHEMTand
EoC temperature;EoC
temperatureconsiders
dieattach.

Approaches of60
Thermalsimulation
2D driftdiffusionmodel 3Dfiniteelementthermalmodel
Gate Gate F.P.
edge F.P. edge
Joule
source
20nm
AlGaN
drain
e.g.,20VDS,3VGS GaN heating
map
3.75m
Calibrated3Dthermalmodel
includingdieandpackage
ThisapproachcombinestheadvantageofaccuratePdiss profile(driftdiffusion)
with3Dfiniteelement,e.g.largemodels
J.W.Pomeroy etal.,Microelectron.Reliab.,(55)12,2505(2015).

Approaches of60
Goodrepeatability
5C

Approaches of60
GaNonDiamondHEMT
Qorvo & Bristol, CSICS 2013;

Pomeroy et al, Appl. Phys. Lett.
104, 083513 (2014).
A3 powerdensityincrease
wasachievedbytheDARPA
NJTTprogram

Approaches of60
Thermalconductivities
Singlecrystallinediamond
Enriched Diamond
Natural diamond
J.R. Olson, Phys. Rev. Lett. 70, 14 (1993).
SiC thermalconductivity:4.8W/cmK

Approaches of60
Singlecrystallinediamond
Notarealisticoptiontouseforsemiconductortechnology
Approaches of60
Polycrystallinediamond
Grainsize
Defects
phononphonon

Approaches of60
Theroleofinterfaces

Approaches of60
Importanceofinterfaces
Source Drain
Gate
GaN
interface
Raman 1m
Diamond probe
Ungated
Transistor
model
2finger
transistor
Polycrystallinediamondpropertiesaswellasinterfacesneedtobeoptimized.

Approaches of60
Diamondthermalconductivity
GaN contact
map mesa
Diamond
contact
interface
Polycrystalline
Diamond
F.E.modelof
ungated HEMT
crosssection
Fitfiniteelementmodelby Diamondthermal +GaN/diamond

adjustingtwoparameters: conductivity interfaceTBReff
Pomeroyetal,CSICS2014.
WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost
35 Slide35
Approaches of60
Diamondthermalproperties
GaN Heatflux Increasing thermal
conductivity along
160W/mK
growth direction
TBReff:Effectivethermal thindielectric
boundaryresistance
100m
Effectivethermalconductivity: polycrystalline
Weightedaverage,influenced diamond
bygrainsize.
O.W.Kiidingetal.DiamondRelt.Mater.,3(1994)1178
Substrate T.C. TBReff
[W/mK] 10 [m2K/W]
8
REMINDER:
GaNonSiC 420 25(~2.5typical) Bulkdiamond:
20003000W/mK
GaNondi 1200(effective) 2.70.3
(Pomeroyetal.,CSICS2013)
Approaches of60
Nearnucleationdiamond
Thermalconductivityimpacted
bygrainsize
Grain evolution can be

controlled by manipulating
the chemistry of the
diamond growth.
J.Anaya et al. Acta Materiala 103, 141 (2016); Appl.

Phys. Lett. 106, 223101 (2015).

Approaches of60
Nearnucleationdiamond

Approaches of60
Diamondbeyondnucleation
Z 3heaters
Thermalconductivity.
determinedby3omega
technique.

Approaches of60
Diamondbeyondnucleation
R.Baranyai etal.APEX9,061302
(2016)

Approaches of60
Modeling ofdiamondproperties
(i) thermalresistancebetweengrains,
(ii) shorteninginthephononmeanfreepathdue
thereducedsizeofthegrains
S.Bhattacharyyaetal.Appl. Phys. Lett. 79, 1441 (2001)
GrainBoundarythickness
Callaway
, ,
, , ,
, ,
1

J.Anaya et al., Acta Materiala
103, 141 (2016).
Kapitzalike
Approaches of60
GaNdiamondinterface

Approaches of60
TransientThermoreflectance
Wafermapping&fast
waferscreening
Varied thickness
28 nm to 100 nm
Presentlywedevelopthisintoacommercialequipment.
Sunetal.IEEEElectronDev.Lett.(accepted)2016;Appl.Phys.Lett.106,111906(2015);Pomeroyetal. IEEEElectronDev.Lett.35,1007(2014).

Approaches of60
Validationofthetechnique
Exp.
Sim. surface temp.
Normalized signal
Sim. total refl.
0 200 400 600 800

t (ns)
Measured transient is consistent on wafers

w/ and w/o gold transducer
Precautions have been taken to ensure that the measured signal represents the
surface temperature transient.
Different UV powers result in identical transients.
Thermo-optic simulation further supports data. H.Sunetal,CSMantech 2015

Approaches of60
GaNdiamondinterface
Dielectricseedinglayerneedstobeoptimized.

Approaches of60
GaNdiamondinterface
2000
H. Sun et al, CSMantech 2015 200 C
1500 MW
100
Transistor peak
diamond
temperature rise
sub (W/m-K)
1000 50
When substrate thermal

HF diamond conductivity is low, TBReff
500 is not the major factor.
SiC
However, TBReff limits heat
removal for high thermal
conductivity substrates.
60 50 40 30 20 10
2
TBReff (m K/GW)
Approaches of60
Waferscreening
Rareimperfectionscan
bescreenedout
Typicallygood
homogeneity
FastwafermappingoftheGaNon
Diamondthermalresistance

Approaches of60
Thermoreflectance fordevices
Materials:
Field Plate
D G Passivation S Two metallization levels:
GaN 1.Drain contact ( )
2.Source field plate ( )
SiC or Diamond GaN ( )
D
45 m
6 m
6 m
G
Field plate
SMartinHorcajo etal.,
S CSMantech 2016

Approaches of60
GaNdiamondHEMTdesign
Decreasingthermalresistanceassociatedwith
thecarrierenablesafurther
Increaseinpowerdensityto~3X
J.W.Pomeroyetal,CSICS2014

Approaches of60
GaN layeroptimization
Source Drain
Gate
Heat e.g.4FingerHEMT
d GaN spreading VaryGaN buffer
TBReff thickness(d)andTBReff
1m
Diamond
1.2
Peak Temperature rise [Norm.]
LowTBR
A1mthickGaN buffer
1.0 d [m]
isoptimalfortherange
Measured TBR
0.75
1
1.5
TBReff valuesexpected
0.8
2
2.5
ThinGaN 3
0.6 J.W.Pomeroyetal,CSICS2014
0 1 2 3 4
-8 2
TBR x10 [Wm /K]

Approaches of60
Ramanexperimentalvalidation
GaN Diamond
260
GaNonSiC S G D Measurement:
240 GaN Diamond
GaN
Simulation:
220
diamond Rinterface
o 2
200 W/mK Cm /W
diamond -8
710 2.7x10
CurrentGaNondiamond 180
Temperature rise [ C]
-8
1400 2.7x10
o
160
Increasingdiamondthermalconductivity 710 0
140
120
OR decreasinginterfacethermal
100
resistance
80
60
Wevalidateallthermalsimulations 40
withRamanthermography 20
measurements. 0
0.1 1 10 100
Depth [m]

Approaches of60
GaNdiamondstability

Approaches of60
Coefficientofthermalexansion
Diamond

Approaches of60
StressinGaN layer
Diamond
DeterminedusingRamanspectroscopy
Year 2011 2012 2013
With nitride Without nitride
0.8
transition layers transition layers 565.0
0.6
565.5
0.4
E2 peak (cm-1)
Stress (GPa)
Tensile
566.0
0.2 566.5
0.0 567.0
Stress free
-0.2 Hot filament Microwave 567.5
Wafer Sunetal,CSMantech 2016

Approaches of60
Howtotestforstability?

Approaches of60
Highmechanicalstability
GaN
diamond
Cantilever
to appy
force
We try to cause fracture at the GaN-diamond interface

D. Liu et al, Appl. Phys. Lett., 107, 251902 (2015).
Approaches of60
Estimationofinterfacestrength
GaN layer fractures as >3 GPa; GaN/diamond interface

fracture strength is much greater.

Approaches of60
Thermomechanicalstability
StressinGaNon
Fractureat
diamond induced >3GPa
byheating (CTE
mismatch)
Good thermo-mechanical stability

in the areas studied ie no change in
the TBR after annealing.
Approaches of60
Conclusions
GaN electronicsmainchallenge atpresentisitsheatsinking.

Ramanthermographyofferstheopportunitytoquantifychannel
temperature,andtoidentifyandoptimizethermalbottleneckssuchas
interfaces.
Ramanthermographyenables0.5mspatialand 10nstimeresolution
thermalimagingin3D,whichcanbeimprovedfurtherusingsolid
immersionlenses(SILs).
GaNonDiamondHEMTsenable3ximprovementinpowerdensity,
however,requireoptimizationindiamondthermalpropertiesnearthe
interfaceandoftheinterfaceitself.
Transientthermoreflectance canbeusedforwafermappingofthermal
interfaces(beforedevicefabrication)andfordevicethermalanalysis.
Highmechanical&thermomechanicalstabilityofGaNdiamondinterface
wasdemonstrated.

Approaches of60
Acknowledgment
Research Professor & Research Fellows PhDstudents:

Prof. Michael J. Uren PeterButler
Dr. James W. Pomeroy
CallumMiddleton
Dr. Dong Liu
Bahar Oner
Postdoctoral Researchers AlexanderPooth
Dr. Julian Anaya Maire Power
Dr. Roland Baranyai BenRakauskas
Dr. Tommaso Brazzini WillWaller
Dr. Indranil Chatterjee YanZhou
Dr. Sara Horcajo
Dr. Huarui Sun
Dr. Serge Karbojan
andothers

Approaches of60

9
9
9
9
Sintered Ag
ITEM UNITS AuSn Ag Epoxy Mfr A Mfr B Mfr C
Bulk Thermal Conductivity W/m-K 57 23 50 100 180
CTE ppm/C 16 38 26 28 22
Modulus @ RT Gpa 59 3.0 6.7 10 26

Drain Efficiency (%)
Pout(dBm)
20
16
12
Gain, Return Loss (dB)
-4
-8
-12
S11
-16 S21
S22
-20
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Frequency (GHz)
61.0 80
60.5 70
60.0
6 60

59.5 50
59.0 40
58.5 30
58.0 Output Power (dBm) 20
57.5 Drain Efficiency (%) 10
57.0 0
1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50
20
15
10
-5
-10
S(2,1)
-15 S(1,1)
S(2,2)
-20
2.3 2.5 2.7 2.9 3.1 3.3 3.5
Frequency (GHz)
800 100
700 90
600 80
Output Power (W)
500 70
400 60
300 50
200 40
Output Power
100 30
Drain Efficiency
0 20
2.6 2.7 2.8 2.9 3.0 3.1 3.2
Frequency (GHz)
20
15
10
-5
-10
S11
-15 S21
S22
-20
4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 6200 6400 6600 6800 7000
Frequency (MHz)
51.0 100
50.5 90
50.0 80
Output Power (dBm)

49.5 70
49.0 60
48.5 50
48.0 Output Power (dBm) 40
47.5 Drain Efficiency (%) 30
47.0 20
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency (GHz)
16
12
8
-4
-8
-12
S21
-16 S11
S22
-20
8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6
Frequency (GHz)
55
Output Power (dBm), Drain Efficiency (%)

50
45
40
35 Drain Efficiency
Output Power
30
8.8 8.9 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7
Frequency (GHz)
20
15
Gain and Return Loss (dB)
10
-5
-10
S21
-15 S11
S22
-20
2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7
Frequency (GHz) Output Power and Efficiency vs. Frequency
100 100
90 90
80 80
Output Power (W)
70 70
60 60
50 50
40 40
Output Power (W)
30 30
Efficiency (%)
20 20
3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55
Frequency (GHz)
25
20
15
S21
10 S11
5 S22
-5
-10
-15
-20
1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4
Frequency (GHz)
57.0 75.0
56.5 70.0
Output Power (dBm)

56.0 65.0
Efficiency (%)
55.5 60.0
55.0 55.0
Psat (dBm)
54.5 50.0
Efficiency (%)
54.0 45.0
2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18
Frequency (GHz)

CosteffectiveGaN HEMTdevelopments
withappropriatethermaltransfer
KazutakaInoue
SumitomoElectricIndustries,Ltd.
inouekazutaka@sei.co.jp
Wednesday, October, 5th, 2016
Slide1
of44
Outline
1.Fundamentals
2.ThermalStudyofSubstrate
3.ThermalDesign(GaNforRadar)
4.ThermalDesign(GaNforBaseStation)
5.Summary
Slide2
of44
HistoryofSumitomoGaNHEMTs
2000 2003 2004 2005 2006 2007 2008 2009 2010 -
Fujitsu, Eudyna Devices Sumitomo Electric

Fujitsu Laboratories Device Innovations
Development Start
Engineering Sample Release
Mass-production
#1 Volume leader
in RF high power GaN
We strive for
Performance
Quality
Reliability
Cost
Capacity
2013 GaN Market Share
above 5W below 4GHz Source: ABI Research 2014 Slide3
WW05 RecentAdvancesinGaN PowerHEMTs RelatedtoThermalProblemsandLowCostApproaches of44
Microwave Device Products

Mobile Base Station Satellite Automotive Radar
GaAsMMIC
GaN HEMT
GaAsFET GaAsMMIC
Radio Link Radar

GulfControl AirTrafficControl Marine
GaNHEMTforRadar
Slide4
WhyGaN?
Johnson'sFigureofMerit
Johnsons FoM = ft x BV BV = BF Lg
= vs /2 x BF
Material Si GaAs SiC GaN

Bang Gap Energy
1.1 1.4 3.2 3.4
(eV) GaN
Critical Breakdown
0.3 0.4 3.0 3.0
Field (MV/cm)
GaAs,
Thermal Conductance InP
1.5 0.5 4.9 1.5
(W/cm/K)
Si, SiGe
Mobility
1300 6000 600 1500
(cm2/V/s)
Saturated Velocity
1.0 1.3 2.0 2.7
(*107 cm/s)
fT = vs / ( 2Lg )
Slide5
CostEffectiveDesign,
FocusedonThermalTransfer
Chipcostisdeterminedby...
Waferprocesscostandyield
Maximumchanneltemperaturedesign
Maximumchanneltemperatureisdeterminedby...
Reliabilityofthedevicetechnology
Thermalconductanceofmaterial(onSiC,onSi)
Chippatternlayout
Operatingcondition
(ThermaldissipationEfficiency)
Slide6
YieldofGaNHEMTWaferProcess
Psat =52.2dBm =0.15
Gp =16.6dB =0.15
Rth =1.2C/W = 0.02
BTSGaNHEMT2.7GHz160W,n=9000pcs,181lots, =lotaverage
GaNHEMTwaferprocesshasbeenrefined,
throughover10yearsmassproduction. Slide7
ReliabilityofGaNHEMT
DCHTOLtest RFHTOLtest
(Vds=60V,Tch=250,275,300,315degC) (Vds=55V,Tch=270,290,310degC,P4dB)
K.Osawa et.al, Over 74% Efficiency, L-Band 200 W GaN-HEMT for Space Applications , EuMC2016.
Slide8
Materialvs.ThermalDesign
Parameters,relatedtothermaldesign;
Thermalconductanceofsubstratematerial(SiC:4.9 Si:1.5[W/cmK])
Substratethickness(Typicalthicknessis100m)
Gatetogatepitch(Widepitchimprovesthedegreeofheatspreading)
Gate Gate
Drain Source Drain
AlGaN
GaN HEMT Layers1m
Substrate Thickness
100m
HeatSpreading
Slide9
ThermalDesignvs.Efficiency
ThermalDissipation Pdc Pout +Pin

Pdc (1 PowerAddedEfficiency)
DCsupplypower RFinputpower
(Pdc) (Pin)
PowerAmp.
Thermal
dissipation
RFoutputpower
(Pout)
Slide10
of44
Outline
1.Fundamentals
5.Summary
Slide11
of44
CaseStudyofGaNonSi
RFPerformance
RFloss(lowgain)
S G D
AlGaN LargeparasiticC
2DEG
Low resistivityregion
DiffusionoftheGa &Al
Silicon intothesiliconsubstrate
GaNHEMTonSirealize
comparableperformance
toGaNonSiC.
I.Makabeetal.,ImprovementofRFperformance
ofGaNHEMT onsiliconsubstrate,Proc.
InternationalWorkshoponNitrideSemiconductors,
No.TuEP12,Wrocaw,PolandAug.2014 Lg=0.6m,f=2GHzVds=50V,Idq=0A
Slide12
Case Study of GaNonSi
Thermal Design(Sub.Thickness)
1.SimulatedThermalresistanceisnot 2.Excessivethinningcauseschipwarping
comparable,evenin30mthickness. @GaAsMESFET

GaNHEMTonSioronSiC
Sub. Thickness:30m Sub.Thickness:20m
(Wg=36mm) AuSn
Chip(flat) Chip(warped)
AuSn
CubasedPackage PackageBase PackageBase
Netimprovementislimitedbychipwarping!
Smalldeviation Largedeviation
Slide13

Thermal Design(GatePitch)
ThermalConductance SiC:4.9 Si:1.5[W/cmK] Chip(onSiC) Chip(onSi)
AuSn
PackageBase PackageBase
ThermalResistance
Chip(SiC)
Chip(Si)
AuSn
AuSn
+PKG
+PKG
onSiC onSi
ThermallyequivalentpitchofGaNonSiis1.6timesofGaNonSiC.
SiCsubstratecostusedtobeseveraltimeshighertothewaferprocesscost.Insuchcost
structure,GaNonSiwasareasonablesolution.
Itshouldbenotedthe1.6timeschipsizeincreasesnetwaferprocesscostofGaNonSi
ThepowerdensityofGaNHEMThasbeenincreasing.Itusedtobe5W/mm,butnow
reachesto10W/mm.Higherpowerdensityfavorsbetterthermalconductancematerial.
Slide14
WW05RecentAdvancesinGaNPowerHEMTsRelatedtoThermalProblemsandLowCostApproaches of44
Thermal Design(ChipStretch)
TwooptionstorealizethermallyequivalentGaNonSi
Option.1(LateralStretch) Option.2(VerticalStretch)
onSiC 300m
onSi 480m
Effect Larger PKGisrequiredforonSi chip. Largerunitfingerincreasesgate

resistance,whichdegradesthe
gainbymorethan1dB.
Gain
1dB
PKGforonSiC PKGforonSi? Unit

300m 480m Length
Judgement Total coststronglydependsonPKGprice. Tradeoffissuearises(vs.gain).
GaNonSiC isthebestsolutionatpresent,judgingfrombothcostandRFproperty.
Slide15
Inaddition...
SiCQualityImprovement
10 years ago (Surface Defects ) SiC qualitywasoneoftheissuestobesolved.
ThecurrentSiChasrealizedsmoothsurface,and
itcontributestothedrasticimprovementofthe
GaNonSiCcoststructure.
Current SiC (Drastically Improved )
Abnormal
epitaxialgrowth
GaN
Defectonsubstrate SiC
Slide16
ProspectofSubstrateMaterial
PowerdensityofGaNHEMThavebeenincreased,andwillbecontinued.
ThebenchmarkofGaNonSivs.SiCindicatestheavailabilityofGaNondiamond.
Powerdensity
Higherpowerdensity
[W/mm]
? favorsbetterthermal
conductancematerial.
2005 2016 2025

RFlosselimination Thermal limitation
onSi required No morecosteffective

Willbemostpromising
Expensive&manydefects
onSiC Chip selectionneeded
Mostpromising Thermaldesignmaybe
critical @>20W/mm
Competitive@>20W/mm
ondiamond SimilartoearlystageSiC?
Quality&costrequired
Slide17
Outline
1.Fundamentals
5.Summary
Slide18
of44
OutputPowervs.Frequency
Pout
Satellite
CW operation
1KW
Case.2 BTS
Backed-off operation
100W Case.1 Radar
Pulsed operation
Si
10W
GaN
1W
Si/GaAs
GaAs/GaN
GaAs Frequency
1GHz 10GHz 100GHz Slide19
SatelliteApplication
(CWoperation,asareference)
K.Osawa et.al, Over 74% Efficiency, L-Band 200 W
GaN-HEMT for Space Applications , EuMC2016.
Gate width 24 mm 2 chip

Chip size 6.0 0.86 mm (5.16mm2)
Design point
of 100W GaN HEMT die
DesignedforCWandsaturatedoperation.(Mostseverethermalrequirement)
Slide20
Case.1Rader(Pulsedoperation)
Rader
System
Object
CWoperation ChannelTemp.
Pulsedoperation
ON
Device
OFF
Tchimage
ThermaldesignofpulsedoperationchipdiffersfromCWone,andtheestimation
ofthetransitionalTchisimportant.Thefollowingslidesexplainthedetail.
Slide21
ChannelTemperatureSimulation
usingTransientThermalResistance
RF/VgON OFF
T
(Rth Approximation)
Rth()
dTch peak1
-(Rth Approximation)
DuringthepulseON,channeltemperaturerisesduetotheheatgeneration.
AtthepulseOFF,thechanneltemperaturefallsdownbyheatdissipation,
whichisexpressedasreversebehaviorofheatgeneration.
Withcombiningthese2lines,thechanneltemperaturefalls.
Slide22
WW05RecentAdvancesinGaNPowerHEMTsRelatedtoThermalProblemsandLowCostApproaches
of44
ChannelTemperatureSimulation
usingTransientThermalResistance
Rth(2T+)-Rth(2T)
RF/VgON OFF Rth(T+)-Rth(T)
T
(Rth Approximation)
Rth()
dTch peak3
dTch peak1 dTch peak2
dTch peak 1 = Pd*Rth() dTch peak 2 = Pd*{Rth(T+)-Rth(T)+Rth()}

= Pd* {Rth(T+)-Rth(T)}+dTch peak 1
-(Rth Approximation) dTch peak 3 = Pd*{Rth(2T+)-Rth(2T)+Rth(T+)-Rth(T)+Rth()}
= Pd*{Rth(2T+)-Rth(2T)}+dTch peak 2
ThepeakTchatthe1stpulseiscalculatedasshowninabove.
The2ndpeakTchisalsocalculated,combiningthese3values.
ThetotalTchriseissummationofthedeltaTchattheeachonstatecondition.
Slide23
ChannelTemperature
Measurement&Analysis
150 ShutterSpeed1msec 150
140 140
=AveragingTime SimulatedTch
130 130
120 120
T ch [d e g C ]
T ch [degC]
110 SimulatedIR 110

100 response 100 SimulatedIR
90 90 response
80 80
70 70
60 60
MeasuredIRTch
50 50
-4 -2 0 2 4 6 -4 -2 0 2 4 6
Time [msec] Time [msec]
Theanalysisperformedmorethan10yearsago.WeonlyhadanIRsystemwith
ratherslowshutterspeed.ButwefoundthemeasuredTchfromIRagreedwith
thesimulatedTchcurve,bytakingtheshutterspeedintoconsideration.
Thus,weconcludedthatthementionedsimulationinpreviousslideisreliable.
AndthecompactkWclassGaNdevicewasdevelopedbyutilizingthisanalysis.
Slide24
kWClassGaNHEMT
PalletAmplifierforRadar
VGG VDD
RF
out
RF
in
VGG VDD
Size:58.5mmX40.0mmX8.0mm E.Mitani et.al, A kW-class

AlGaN/GaN HEMT pallet amplifier
Input/Outputmatchedto50ohm for S-band high power application ,
EuMIC2007.
IncludesRCBiasCircuit
Cubase
Slide25
kWClassGaNforRadar
RFPerformance
IDD(DC)=2.0A,PulseWidth200sec,Duty10%
VDD=65V VDD=80V 60.0dBm
60 90 60 90
59.4dBm
80 80
f=2.9GHz 70 f=3.2GHz 70
Output Power [dBm]
Output Power [dBm]

Drain Efficiency [%]
55.0%
55 60 55 60
49.5%
Gain [dB]
Gain [dB]
50 50
40 40
50 30 50 30
13.8dB 20 14.1dB 20
10 10
45 0 45 0
35 40 45 50 35 40 45 50
Input Power [dBm] Input Power [dBm]
Output Power Drain Efficiency Gain Output Power Drain Efficiency Gain
Compact1kWclassGaNHEMTforradarapplicationhas
successfullydemonstrated,byoptimizingforpulsedoperation.
Slide26
UptodateAchievement
Xband300WGaNHEMTforRader
K.Kikuchi et.al, An 8.510.0 GHz 310 W GaN HEMT for radar
applications, 2014 IEEE MTT-S Int. Microwave Symposium
Digest, 2014.
PKG size 24.0 mm 17.4 mm
Gate width 14.4 mm 2chip (10 watt/mm)
Chip size 5.4 mm 0.7 mm
Chip outline Lg=0.4m, Via-Hole
60 55.2dBm 15.0 58 30
55.2dBm
Output Power (dBm)

Pout (dBm), PAE (%)
55 14.5 56 (333W) 25
50 Pout 14.0 54 20
Gain (dB)
GL (dB)
45
GL 14.1dB 13.5 52 15
Gain
40 13.0 50 10
35 PAE 12.5 48 Pout 5
42% 10.2dB
30 12.0 46 0
35 40 45 50 55 60 65 70 32 34 36 38 40 42 44 46
Vds (V) Input Power (dBm)
PulseWidth=100sec,Duty=10%,Frequency=9.0GHz
Slide27
UptodateAchievement
Xband300WGaNHEMTforRadar
400
This work 350
(Maximum) CW
Thiswork
300
Output Power (W)
Frequency 8.5 10.0 250

Pulse 333W
(GHz) (9.0) 200
OutputPower 310 150
(W) (333) 100
PowerGain 10.0 50
(dB) (10.2) 0
Vds = 65 V, Idq = 0.80 A 7 8 9 10 11 12
Pulse Width = 100 sec, Duty = 10% Frequency (GHz)
Slide28
ProspectofCostEffectiveGaN
forRaderapplications
UsingGaNtoreplacetheklystron
Highreliability,Maintenancefree
Compact,Easyoperation
>ReductionofOPEX
GaNoutputpowerisnotaslargeasklystron,
butitallowslongpulses.Pulsecompression
canbeused.
CosteffectiveGaNHEMTwillpenetrateinto
theradarapplications.
Filter
LinearFMPulse FrequencyDependent
DelayFilter
http://www.river.go.jp/xbandradar/ CompressedPulse
Slide29
Outline
1.Fundamentals
5.Summary
Slide30
of44
Case.2 BTS Application
(BackedoffOperation)
BTStrend Smaller Higherefficiency

PowerProbability
WiMAX 5G
WCDMA LTE,LTEadv
Drain Efficiency
00.10.20.30.40.50.60.70.80.91
NormalizedOutputPower year
Bothefficiencyimprovementsofdeviceitself&efficiencyenhancementcircuit
techniquesarerequired,atbackedoffpowerregion.
Slide31
OperationClass(F,inverseF)
D
Inverse Class-F
Id
G Vd Class-F
S Ids Ids Vds
Vds
Id, Vd
Id, Vd
0 90 180 270 360 0 90 180 270 360
t t
Load Impedance for Harmonics
Even : 0 (Short) Even : (Open)
Odd : (Open) Odd : 0 (Short)
Peak Value of Voltage, Current

Voltage: 2x Vds(DC) Voltage: 3.14x Vds(DC)
Current: 3.14x Average Ids Current: 2x Average Ids
Slide32
CombinationofInv.ClassF
&GaNHEMTProperty
On-R
Ids
1.6
1.4
Vgs=+2V
1.2
Inverse-F 1.0
Ids [A]
-F 0.8
Vgs=+0V
0.6
0.4
Rds Vgs=-1V
0.2
0
0 50 100 150 200
Vds Vds [V]
InverseClassFrequirementare,
LowRon(SteepKnee)reducesRFloss
Highbreakdownvoltagecontributestokeepgoodpinchoff
GaNHEMTisthebesttechnologyfortheserequirementsatpresent.
Slide33
CircuitofInverseClassF100W
GaNHEMT
DesignConcept
Circuit:Harmonictunebysimple(=lowcost)LC circuit(LPF)
GaNchip:Sizeminimizationbyreferringthermalloss
Inductor Product: EGN21C105I2D
Bonding Wire 52 Vds=50V, f=2.14GHz 100
Transmission Line Capacitor (r=150)
on Alumina sub. 50 90
48 80
Pout [dBm]
46 70
44 60
42 50
40 40
38 30
100W
Input Output 36 20
GaNChip
18 20 22 24 26 28 30 32 34 36 38
Pin [dBm] Slide34
Theory ofDohertyAmplifier
Id
(a)Backedoff
Zopt
PeakAmp. OFF
/4
Open
PowerMatching
Class-C
Main Amp. Zopt/2

/4 2xZopt
Class-B or AB Vd
Zopt 2xZopt
EfficiencyMatching
(b)PeakPower dependon dependonbothmain

mainamp'seff. andpeak amp'seff.
PeakAmp. ON
/4
A B
Class-C
Zopt
Efficiency
Main Amp. Zopt/2 a b

/4
Class-B or AB
Zopt 6dB BO Psat Pout Slide35
GaNHEMTforDohertyPA
a b c Drain Ids a) Ron
gm Rd
Rds Cds DC IV-Characteristics
Rs RF Signal Loss
Source b) Rds
c) Cds Key of High Frequency Performance Vds
70W-class Device for 2.6GHz Base Stations

70W-class Device Vds Imax Wg Cds
Si LDMOS-FET 28V 26A 120mm 31pF
GaN HEMT (This work) 50V 11A 18mm 3.8pF
H. Deguchi et.al, "A 33W GaN HEMT Doherty Amplifier with 55% Drain Efficiency for 2.6GHz Base Stations,
2009 IEEE MTT-S Int. Microwave Symposium Digest, pp.1273-1276, 2009.
Slide36
RFPerformanceofDohertyPA
Pout Gain Vds = 50V, Idq-m = 200mA Idq-p : Class-C Bias
Pout(Pulse) Gain(Pulse) f = 2.6GHz, CW Pulse Duty = 10% (6s/60s)
Drain Efficiency
55 100
Output P ower [dB m ], Gain [dB ]
50 90 Cds-reduced
45 Pout 80 Device
DrainEfficiency[%]
D rain E fficiency [% ]
40 70
35 60
Effi.
30 50
25 40
20 30 Conventional
Device
15 20
10 Gain 10 Freq.=2.57GHz, Vds=50V
5 0
20 22 24 26 28 30 32 34 36 38 40 42
Input Power [dBm]
H. Deguchi et.al, "A 33W GaN HEMT Doherty Amplifier with 55% Drain Efficiency for 2.6GHz Base Stations,
2009 IEEE MTT-S Int. Microwave Symposium Digest, pp.1273-1276, 2009. Slide37
ExampleofEnvelopeTracking(ET)
Conventional Operation Envelope Tracking Operation
F.Yamaki et.al, A 65 % drain efficiency GaN
Fixed Vds HEMT with 200 W peak power for 20 V to 65
Vds
Vds
Supply
V envelope tracking base station amplifier ,
2011 IEEE MTT-S Int. Microwave Symposium
Time Time Digest, 2011.
Output Signal Modulated
Output Signal Vds Supply
GaNHEMTforEnvelopeTracking
1.Cds reduction&Vdsdependencereduction
2. BVdsx300V,for2065VEToperation
Imax =680mA/mm, Cds=0.15pF/mm, BVdsx300V

Slide38
OptimumThermalDesignforBTS
1.ThermalDesign
SpecifiedforBTS
Generaluse
Dependon
efficiency
OutputPower[W]
2
1
2.EfficiencyBoosting
2005 2006 2009 2011
Circuit Higher Doherty
ClassAB ET
Technique Class w/ClassF1
DrainEff.@8dBB.O. 34% 45% 55% 68%
ThermalDissipation Ref. 83% 68% 48% ChipSize[mm2] Slide39
RRH*BTSsystemandGaNHEMT
* Remote Radio Head
Base Station
RRH RRH RRH

Less than20kg/20L
Easy to Settle
Optic Fiber0.1-20km)
Control Unit
CAPEX(CapitalExpenditure)>CostreductionofGaNitselfhasbeenprogressed,andsmall
&lightweightPA,utilizingGaNhighefficiency,contributestoBTSsettingcost.
OPEXOperatingExpenditure >HigherefficiencyPArealizeslowerpowerconsumption.
Slide40
MicrowaveDeviceMarket
&SEIGaNHEMTShipment
Total$1600M (@2013)
SiLDMOS
GaNHEMT
Slide41
Outline
1.Fundamentals
5.Summary
Slide42
of44
Summary(1/2)
GaNHEMTshavealreadyrealizedhighquality,uniformityandreliabilityfor
infrastructureRFpowerapplications.Thus,thecostreductionhasbeen
stronglyrequired.
Theadequatethermaltransferdesignisoneofthesolutions.GaNonSiChas
beenprovedthebestmaterialtosatisfyboththecostandthermal
requirements.Thefocusdesignonpulsedoperationiseffectiveforcompact
radardevices,andtheefficiencyboostinginbackedoffregionhavereduced
thechipsizeofbasestationPAs.
Quality GaNHEMT
SiCcrystal,Epigrowthuniformity,Smallprocessdeviation
tovarious
Reliability applications
Stringentqualification,Ruggedness
(Satellite,Radar,
Cost
Adequatethermaldesign,utilizingSiCmaterialproperty Basestation)
Slide43
of44
Summary(2/2)
GaNHEMThasalreadybeenadoptedinseveralmarkets.Forfurthermarket
penetration,continuouscostdowneffortsareessential.
90WGaNChipx2
(NotspecifiedforBTS)
Price
24x17.4mm
210WGaNChip
(SpecifiedforBTS)
21x13.2mm
4 inch
3 inch
4Wafer 2inch
Year Slide44
of44
Costeffectiveapproachesfor
EuropeanGaAs &GaN Power
solutions
GuillaumeCALLET
guillaume.callet@umsgaas.com

Approaches
Outlilne
What can be thereducing cost driversforGaN onSiC solution?
Presentation of UMS
Overview of GaN technologies
Thermal analysis for the development of packaged GaN solution
UMS Products & Foundry Solutions
Conclusions
Slide2
Outlilne
Presentation of UMS
III-V company with 20 year experience in semiconductor (especially GaAs
HEMT)
Conclusions
Slide3
UMSat aglance
Founded in 1996 by gathering Thales and AIRBUS Defense and Space

GmbH activities
European source of RF MMIC solutions, GaAs and GaN foundry services
2 industrial facilities in Ulm (Germany) & Villebon (France)
400 people
Villebon facility Ulmfacility
Slide4
Outlilne
Presentation of UMS
Conclusions
Slide5
UMSGaN technologies
GH50 GH25 GH15
Powerbydie(W)
Status Released Released Tobe
released 2017
Designkit Designkit Targeted
available available Performances
GH50Powerbar Gate length 0.50m 0.25m 0.15m
Power 5W/mm 4W/mm 3.5W/mm

OperatingVds 50V 30V 20V
100 Breakdown
voltage >200V >120V
(Vbds)
GH25MMIC
MTF 1e6/200C 1e6/200C 1e6/200C
New Domain of Upto7GHz Upto20 Upto40GHz
50 GH50 Development frequencies GHz
GH25
10 GH15 Frequency
(GHz)
5 10 15 20 25 30 35 40
Target Slide6
Outlilne
Presentation of UMS

Various Packaging solutions
Thermal management of QFN
oPCB / Glue / Die Coating

Conclusions
Slide7
Packagingofferforpower
MainconstraintsforGaNpackaging relatedtocosts:
Frequencyband
Slide8
Thermalmanagement
Thermalmanagementanalysis
Different solutions investigated: PlasticmoldedQFN

Package solutions:
Flange
Ceramic metal SMD
CeramicmetalSMD
SMD QFN
Stack variation
PCB variations
Interlayer stack Flangepackage
Mo / Diamond Tab
CuMo Coin
Slide9
Broadbandpackages
1:PlasticmoldedQFN
2:Enhancedflangepackage
3:CeramicmetalSMD
4:Flangepackage
Package+PCBreturnlosses(dB) Package+PCBinsertionlosses(dB)
1
4 2
3 3
4
2
SMD QFN package is excellent

Flange packages are competitive up to 20GHz
PackageoptimizationstillongoingtoachieveVSWR<1.5:1at20GHz
Partofthematchingcanbeintegratedintothedie Slide10
PackageThermalanalysis
Target: Package GH50 & GH25 products
C1 R1
GaN /SiC
Dieattach R4
Thermalflow
Leadframe R2
C2
Solder
R5
PCB
C3 R3
Analysismustbecarriedoutondifferentsamples:
Powerbares
MMICs
Finiteelementsimulationsperformedondifferent3mainspackagefamily ANSYS
Slide11
MMICPackaging:
Modeling assumption
Analysis performed on ANSYS:
Symmetry : of the device is meshed
TestVehicleGH25MMIC:
GaN/SiC interface Layer with low thermal conductivity (TBR) 1st stage:4x8x125m
2nd stage:8x8x150m
Joule heating Block heater along drain edge of gate foot ( 1.5 m)
Boundary condition Fixed temperature on backside of full assembly
Meshing Specific methodology for power bars 1 000 000 nodes
2nd stage 1st stage

Pdiss@14GHz & 34dBm Pdiss@14GHz & 34dBm
3.8 W/transistor 2 W/transistor
8 transistors 30.4W 8 transistors 16W
Pdiss = 3.16W/mm Pdiss = 2W/mm Slide12

Flange Package
Tc = 80C / Pdiss : 2nd stage 3.16 W/mm (30.4 W) / 1st stage 2 W/mm (16 W)
Cases Flange KYO Flange KYO+TabMo Flange +TabDiamond
GaN/TBR
GaN/TBR
SiC 100m
SiC 100m
AuSn 25m
GaN/TBR 2m AuSn 25m
SiC 100m Mo 150m
CVD/Cu 300m
AuSn 25m AuSn 25m
AuSn 25m
Stack
CuMoCu 1.4mm CuMoCu 1.4mm
CuMoCu 1.4mm
Thermalpaste 50m Thermalpaste 50m

Thermalpaste 50m
Tcase Tcase
Tcase
Rth_tot 3.75 3.84 3.24

(C/W)
Tj _max 194 196.8 178
(C)
Slide13
Ceramic metal SMD
Cases SMD& PCBcoin SMD& PCBvias

PCBCoinFootprint
GaN/TBR
SiC 100m GaN/TBR
AuSn 25m SiC 100m
CuW 200m AuSn 25m
SnPb 100m CuW 200m
SnPb 100m
Cu 18m
Insulator 1.3 mm Cu1.3mm
Stack CF3350 50 m
Insulator 203 m
Cu 1mm
Al6061 3mm
Tcase
Tcase PCBViaFootprint
Rth_tot 5.06 4.69

(C/W)
Tj _max 233.8 222.7
(C)
Slide14
PlasticPackageSMDQFN
Cases SMD& PCBcoin SMD& PCBvias
GaN/TBR
GaN/TBR
SiC 100m
Ag 15m
SiC 100m 2differentAgbasedglues
Ag 15m
C194 200m C194 200m evaluated:
SnPb 100m SnPb 100m
Insulator 1.3 mm Cu1.3mm

Cu 18m a) 20W.m1.K1
Stack CF3350 50 m
Insulator 203 m
b) 70W.m1.K1
Cu 1mm
Al6061 3mm
Tcase
Tcase
Rth_tot 4.97a 4.72b 4.56a 4.32b

(C/W)
Tj _max 231a 224b 219a 211b
(C)
Slide15
Synthesis
Case
Packaging Remark Rth (C/W) Bandwidth Cost
study
1 Flange KYO Hermetic 3.75 Up to 6 GHz
2 Flange KYO + Mo TAB Hermetic 3.84 Up to 6 GHz

Flange KYO + Diamond
3 Hermetic 3.25 Up to 6 GHz
TAB
4 SMD + PCB coin Hermetic 5.06 Up to 14 GHz
5 SMD + PCB via Hermetic 4.69 Up to 14 GHz
Die attach : 20 W.m-1.K-1 4.97 > 20 GHz

6 SMD QFN + PCB coin

7 SMD QFN + PCB via
Slide16
Approach powerbarassembly
TemperatureGradient
8x8x400m / Tref = 75C / P = 2W/mm/ CW
Tj_Peak=211,9C
Slide17
DieAttachImpact
8x8x400 / 7x7 QFN, CW, P=2W/mm, Tcase=75C, Cond glue = 40W/m.K
contribution
T(C) delta T (C) Rth(C/W)
(%)
GaN / TBR 217.9 21.4 0.418 15.0
substrat SiC 196.5 18.2 0.355 12.7
colle puce (40W/mK) 178.3 15.6 0.304 10.9
Leadframe 162.7 12.7 0.248 8.9
BrasureSnPb 150.0 23.7 0.463 16.6
CI/glue 126.3 30.3 0.591 21.2
Drain Al 96.1 21.1 0.411 14.7
Total 75 142.9 2.792 100.0
8x8x400 / 7x7 QFN, CW, P=2W/mm, Tcase=75C, Cond glue = 20W/m.K

T(C) delta T (C) Rth(C/W) contribution (%)
GaN / TBR 230.9 22.0 0.430 14.1
substrat SiC 208.9 18.4 0.360 11.8
colle puce (20W/mK) 190.5 28.9 0.565 18.6
Leadframe 161.6 12.1 0.235 7.7
BrasureSnPb 149.5 23.3 0.455 14.9
CI/glue 126.2 30.1 0.588 19.3
Drain Al 96.1 21.1 0.411 13.5
Slide18
Total 75 155.9 3.046 100.0
GH50 Power Bar / Transient
8x8x400 / 7x7 QFN / Tref = 75C / P = 2W/mm
Slide19
Conclusion on assembly
SMD QFN solutions are broadband and lower cost solution

Applied to GH25 and GH50
Analysis shows that thermal management strongly depends on the PCB

Coin offers very good thermal dissipation / difficult to implement to series
Thermal glue can reduce by roughly 0.2 W.m-1.K-1
As demonstrated GaN on SiC packaged in QFN can also operate in CW

Important care must be take to the functioning conditions
MMIC
HigherIntegration InternallyMatched
$$$

QMMIC
InternallyMatched
DISCRETE
GeneralPurpose
Slide20
L S C X Ku Freq
Outlilne
Presentation of UMS
Foundry Presentation
o Market addressed are not only military
o Foundry partner contribution
Quasi-MMIC solution development
o Concept: Combination of GaN & GaAs
o Cost reduce
o Solutions
Conclusions
Slide21
UMS Foundry Solutions
Slide22
PPH15X20
1WHighPowerAmplifier37 40GHz
Powerdetectorinside,GainControl
Advanced concept / PPH15X-20 / QFN / CHA6194-QXG
6194
Application
Pointtopoint
PointtoMultipoint
High linearity HPA

RF bandwidth: 37-40GHz
Linear Gain: 20dB
Power at 1dB comp.: 30dBm
Sat. Power : 31dBm
Specific features:

RL>13dB
GaAs pHEMT process Consumption: 6V, 0.8 A
Power detector dynamic 30dB
Low AM/AM, AMP/PM,
QFN 5x6
Slide23
PPH15X20
1WHighPowerAmplifier37 40GHz
Powerdetectorinside,GainControl
Vd=6V Idq=0.8A
34
32
30
Pout(dBm),Gain(dB)
28
26 Pout@1dBgaincomp
Pout@4dBgaincomp
24 LinearGain
22
20
18
36 37 38 39 40 41
Freq(GHz)
Slide24
Foundry Portfolio
QFNAssemblyofferforallprocesses Slide25
GH50&GH25Foundrykey figures
Nbre ofwafer/year Overallrepartition
200
150
GH50
Defense
100 Telecom
50 Space
GH25 R&D
0
2011 2012 2013 2014 2015 2016
GH25: Since 2010 more than 130 wafers processed in the frame of
80 different projects
GH50: Production launched and transferred to 4
More 150 wafers to be manufactured in both GH50 & GH25 in

2016
Design Kit including EM Stack and DRC for ADS2016 Slide26

DKavailableforGH2510
GH25:MMICprocess:Qualified&OpeninFoundry
250nmgatelength
On4inchSiC wafer
Frequencyrange:DC 20GHz
Vds =30VasstandardRecommendedOperatingValue
Idss =850mA/mmasaveragevalue
VeryHighbreakdownvoltage:Vbds >120V
Powerdensity:4W/mm@10GHzinCWMode
DesignKitavailableforADS20092016&MWO
NLmodelforHotFET(electrothermal)
LFETmodelfornoise
NLmodelforColdFET
NLmodelfordiodes
(Scalablemodelsforpassivesandactiveelements)
Newfeatures:DRC&StackEMavailableforADS2016
Slide27
ANSYS/ADSThermalanalysis
Transistor GH25 8x125 dUMS / Vds=25V Ids=25mA/mm
ADS2013
Slide28
TNO HPAGH2510design
Incourtesy ofTNO
THERMAL SIMULATION
Input stage 1x10x275um, Pdiss=8.2 W
Output stage 4x10x275, Pdiss=23.3 W
Matching networks, Pdiss=7.2W
( = Pdiss_total - (input+output stage) )
Tj Inputstage
Tj Outputstage
MMICbottom
Packagebottom
Slide29
GaNS3
UMS product Solutions
Slide30
Product
CHK015AQBA
DC 6GHzPackagedTransistor
Application
Radar&Communications
GeneralPurposeTransistor
RF bandwidth: DC 6GHz
Linear Gain: 14dB @ 6GHz
Specific feature Output Power: > 15W
Wide-band
Drain Efficiency: > 70%
Low parasitic Plastic Package
PAE: 50% @ 6GHz
Low thermal resistance Package: DFN 3x4
Slide31
SamplingNow
25W / X-band / QFN
Insampling /GH25Based /Dieproducttobepackaged
V
Application
Defence / Space
In STG1 STG2 Out
Main Performances
RF bandwidth: 8.5 10.5GHz

V+
Gain: 30dB
Pout : 25W
Specific feature PAE_associated: 45%
High efficiency Consumption: 30V, 0.8A
High power
Die / 15W version available in QFN
Slide32
Quasi MMIC Concept
Use of UMS proprietary Passive MMIC Technology: Q-MMIC is close to MMIC size
Input GaN Output

Matched + Power + Matched 50
50
Circuit Bar Circuit
$
$ + $ + $
$
Fast design& Fast design&

fabrication fabrication CustomizeyourQMMIC

Slide33
WhyQuasiMMIC?
Integration
Exampleof50WC
ClosetoMMICsize bandHPA
6mm
Cost
3.6mm 7.6mm
6
Closetohybridsolutions
MMIC/QuasiMMIC Cost
Flexibility 3
Shortdev.cycletimes(passiveMMICs) 2
GH50/25:14WeeksICT 1
10 15 20 25
URLC:5Weeks MMICSize(mm)
ApplicabletoQFNforlow cost development Slide34

NewProduct
100W/Lband/QFN
Indevelopment /GH50based /InternallyMatched /QMMIC
Application
Radar/DualUse
Main Performances
RF bandwidth: 1.2 1.4GHz

Linear Gain: 15dB
Output Power: 100W
Gain @ 50W 10dB
Specific feature @ 1.3GHz
PAE : 55%
Peak Pout=110W
Package: DFN 7x7
With PAE=57%
Gain = 14dB
Slide35
HighPerformancePlasticPackaged100WLBandQuasiMMICHPAD.Bouw etal. EuMC0605
NewProduct
50W/Cband/QFN
Indevelopment /GH25based /InternallyMatched /QMMIC
Application
Radar&Communications
Main Performances
RF bandwidth: 5.2 5.9GHz 5.9-6.9GHz
Linear Gain: 14dB 13dB

Output Power: 50W 50W
Specific feature
Gain @ 50W 10dB 9dB
High PAE
PAE : 47% 45%
Low parasitic Power Plastic Package
Package: DFN 7x7 DFN 7x7
Low thermal resistance
Slide36
Advanced
CbandDPADescription Development
SymmetricDPAArchitecture/GH25based/QMMIC/QFNpackaging
Application
Communications/5G
Main Objectives
Configuration
1 stage => for investigations purpose
Single & dual input
Linearity / Main & Peak
synchronization
Key Performance
Frequency band : 5.6 6.6GHz
Peak Output Power: 15W
PAE @ 6dB OBO: > 35%
Slide37
C-band DPA Characterizations
PAE vs Freq / 6 & 10dB OBO / 4 Boards / T=25C

Biasing conditions:
Vd = 30V
Id_q_main = 60mA / Vgs0_peak = -7V
6dBOBO
10dBOBO
Slide38
Outline
Presentation of UMS
Conclusions
Slide39
Conclusions
QFNSolutionvalidatedforpowertechnologiesupto40GHz including
GaN
MMICinQFNforGH25validatedwithenhancedglue+PCBsolutions
Highefficiencysolutionsalreadyavailable
QMMICinQFNusedforGH50&GH25
Challengingsolutionsevaluated
ReleaseofPPH15X20forapplicationsupto40GHz
FoundryaccessallowingmoreandmoreQFNassembly
ToolsavailableforADSallowmoreaccuratethermalanalysis
AssociationwithURLC(passiveprocess)availableinFoundry
Indicatorsallowtoidentifythecostdecrease(IndustrialManufacturingcycletime
reducing,)
Finalpassivation isunderdevelopmentandshouldbeavailableto
improvetherobustnessversushumidityforGH50/GH25/URLC
Slide40
Aknowledgment
TNOfortheir participation
Colleagues fortheir support&works
M.Camiade
PF.Alleaume
L.Brunel
M.Feron
E.Leclerc
JP.Viaud
Slide41

GaN Power HEMTs Thermal Problems Low-Cost Approaches

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Recent Advances in GaN Power HEMTs

Related to Thermal Problems

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide1

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide2

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide3

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide4

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide5

GaAs based module

GaN HEMT GaN

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide7

Gate metal diffusion

J. A. del Alamo et al., IEEE IEDM 2004

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide8

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide9

Often35m or810m spectralwindowisused.

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide10

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide11

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide13

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide14

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide15

120 source drain

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide16

Extra channel temperature rise

TBR x10-8 (m2K/W)

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide17

Orderofmagnitude faster andmoreaccurate

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide18

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide19

6 Designed confocal 0.4

4 SiC SIL limit

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide21

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide22

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide23

Foropticallynon transparantmaterials Smallsurfacearea

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide26

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide27

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide28

Qorvo & Bristol, CSICS 2013;

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide29

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide30

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide32

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide33

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide34

Fitfiniteelementmodelby Diamondthermal +GaN/diamond

Grain evolution can be

J.Anaya et al. Acta Materiala 103, 141 (2016); Appl.

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide37

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide38

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide39

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide40

S.Bhattacharyyaetal.Appl. Phys. Lett. 79, 1441 (2001)

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide42

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide43

Sim. total refl.

0 200 400 600 800

Measured transient is consistent on wafers

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide44

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide45

When substrate thermal

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide47

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide48

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide49

WW05RecentAdvancesinGaN PowerHEMTsRelatedtoThermalProblemsandLowCost Slide50

dTch peak 1 = PdRth() dTch peak 2 = Pd{Rth(T+)-Rth(T)+Rth()}