ISL9R460PF2

April 2009

ISL9R460PF2
4A, 600V Stealth Diode
General Description Features
The ISL9R460PF2 is a Stealth diode optimized for low Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3
loss performance in high frequency hard switched Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 20ns
applications. The Stealth family exhibits low reverse
recovery current (IRRM) and exceptionally soft recovery Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
under typical operating conditions. Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching Avalanche Energy Rated
applications. The low IRRM and short ta phase reduce loss
in switching transistors. The soft recovery minimizes Applications
ringing, expanding the range of conditions under which the Switch Mode Power Supplies
diode may be operated without the use of additional
Hard Switched PFC Boost Diode
snubber circuitry. Consider using the Stealth diode with
an SMPS IGBT to provide the most efficient and highest UPS Free Wheeling Diode
power density design at lower cost.
Motor Drive FWD
SMPS FWD
Formerly developmental type TA49408.
Snubber Diode

Package Symbol

TO-220F

A
CATHODE ANODE

Device Maximum Ratings TC = 25C unless otherwise noted

Symbol Parameter Ratings Units

VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VR DC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 108C) 4 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 8 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A
PD Power Dissipation 22 W
EAVL Avalanche Energy (0.5A, 80mH) 10 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 150 C
TL Maximum Temperature for Soldering
TPKG Leads at 0.063in (1.6mm) from Case for 10s 300 C
Package Body for 10s, See Techbrief TB334 260 C
CAUTION: Stresses above those listed in Device Maximum Ratings may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

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Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R460PF2 ISL9R460PF2 TO-220F N/A 50 Units

Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

IR Instantaneous Reverse Current VR = 600V TC = 25C - - 100 A
TC = 125C - - 1.0 mA

On State Characteristics
VF Instantaneous Forward Voltage IF = 4A TC = 25C - 2.0 2.4 V
TC = 125C - 1.6 2.0 V

Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A - 19 - pF

Switching Characteristics
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/s, V R = 30V - 17 20 ns
IF = 4A, dIF/dt = 100A/s, V R = 30V - 19 22 ns
trr Reverse Recovery Time IF = 4A, - 17 - ns
IRRM Maximum Reverse Recovery Current dIF /dt = 200A/s, - 2.6 - A
VR = 390V, TC = 25C
QRR Reverse Recovered Charge - 22 - nC
trr Reverse Recovery Time IF = 4A, - 77 - ns
S Softness Factor (tb/ta) dIF /dt = 200A/s, - 4.2 -
VR = 390V,
IRRM Maximum Reverse Recovery Current - 2.8 - A
TC = 125C
QRR Reverse Recovered Charge - 100 - nC
trr Reverse Recovery Time IF = 4A, - 54 - ns
S Softness Factor (tb/ta) dIF /dt = 400A/s, - 3.5 -
VR = 390V,
IRRM Maximum Reverse Recovery Current - 4.3 - A
TC = 125C
QRR Reverse Recovered Charge 110 - nC
dIM/dt Maximum di/dt during tb - 500 - A/s

Thermal Characteristics
RJC Thermal Resistance Junction to Case - - 5.7 C/W
RJA Thermal Resistance Junction to Ambient TO-220F - - 70 C/W

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Typical Performance Curves TC = 25C unless otherwise noted
8 600

7
150o C 150o C
25oC 100

IR, REVERSE CURRENT (A)

IF, FORWARD CURRENT (A)

6
125oC
5

10 100o C
4
100oC
3 75oC

2 1

1 25oC

0 0.1
0 0.5 1 1.5 2 2.5 3 100 200 300 400 500 600

VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)

Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage

90 120
VR = 390V, TJ = 125oC VR = 390V, TJ = 125oC
80
tb AT dIF/dt = 200A/s, 500A/s, 800A/s 100
70
tb AT IF = 8A, 4A, 2A
t, RECOVERY TIMES (ns)

t, RECOVERY TIMES (ns)

60 80

50
60
40

30 40

20
ta AT IF = 8A, 4A, 2A
20
10
ta AT dIF/dt = 200A/s, 500A/s, 800A/s
0 0
1 2 3 4 5 6 7 8 100 200 300 400 500 600 700 800 900 1000

IF, FORWARD CURRENT (A) dI F /dt, CURRENT RATE OF CHANGE (A/s)

Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt

8 8
IRRM , MAX REVERSE RECOVERY CURRENT (A)

IRRM , MAX REVERSE RECOVERY CURRENT (A)

VR = 390V, TJ = 125oC VR = 390V, TJ = 125oC

7
7 IF = 8A
dIF/dt = 800A/s

6
6 IF = 4A
IF = 2A
5
5
dIF/dt = 500A/s 4

4
3

3 2
dIF/dt = 200A/s
2 1
1 2 3 4 5 6 7 8 100 200 300 400 500 600 700 800 900 1000

IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s)

Figure 5. Maximum Reverse Recovery Current vs Figure 6. Maximum Reverse Recovery Current vs
Forward Current dIF/dt

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Typical Performance Curves TC = 25C unless otherwise noted
6 180
S, REVERSE RECOVERY SOFTNESS FACTOR

VR = 390V, TJ = 125o C VR = 390V, TJ = 125o C

QRR, REVERSE RECOVERY CHARGE (nC)

IF = 8A
160
5

140
IF = 4A
4
IF = 8A IF = 4A
120

3
100
IF = 2A IF = 2A
2
80

1 60
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000

dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s)

Figure 7. Reverse Recovery Softness Factor vs Figure 8. Reverse Recovery Charge vs dIF/dt
dIF/dt

1800 5
IF(AV) , AVERAGE FORWARD CURRENT (A)
1600
CJ , JUNCTION CAPACITANCE (pF)

4
1400

1200
3
1000

800
2
600

400 1

200

0 0
0.03 0.1 1.0 10 100 100 110 120 130 140 150
VR , REVERSE VOLTAGE (V) TC , CASE TEMPERATURE (OC)

Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve

2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
THERMAL IMPEDANCE

0.02
ZJC, NORMALIZED

0.01
PDM
0.1

t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZJC x RJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)

Figure 11. Normalized Maximum Transient Thermal Impedance

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Test Circuit and Waveforms

VGE AMPLITUDE AND

RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF dIF trr
IF
dt ta tb
DUT CURRENT
SENSE 0
RG
+
VGE VDD 0.25 IRM
t1 MOSFET - IRM

t2

Figure 12. Itrr Test Circuit Figure 13. trr Waveforms and Definitions

I = 0.5A
L = 80mH
R < 0.1
VDD = 200V
E AVL = 1/2LI2 [VR(AVL) /(V R(AVL) - V DD)]
Q 1 = IGBT (BVCES > DUT VR(AVL)) VAVL
L R

CURRENT +
SENSE V DD
IL IL
Q1
I V
V DD
DUT -
t0 t1 t2 t

Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms

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Mechanical Dimensions

TO-220F 2L

10.16 0.20 3.18 0.10 2.54 0.20

3.30 0.10
(0.70)

6.68 0.20

15.87 0.20
(1.00x45)
15.80 0.20

(1.80)
(6.50)

12.00 0.20
9.75 0.30

MAX1.47 2.76 0.20

0.80 0.10

0.35 0.10
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20] +0.10
0.50 0.05
4.70 0.20

9.40 0.20

Dimensions in Millimeters

2009 Fairchild Semiconductor Corporation ISL9R460PF2 Rev.A1

 ISL9R460PF2
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40

2009 Fairchild Semiconductor Corporation ISL9R460PF2 Rev.A1