BYG21

Vishay Telefunken

Fast Silicon Mesa SMD Rectifier

Features
D Glass passivated junction
D Low reverse current
D Soft recovery characteristics
D Fast reverse recovery time
D Good switching characteristics
D Wave and reflow solderable

15 811

Applications
Surface mounting
Fast rectifier
Freewheeling diodes in SMPS and converters
Snubber diodes

Absolute Maximum Ratings

Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage
g BYG21K VR=VRRM 800 V
=Repetitive peak reverse voltage BYG21M VR=VRRM 1000 V
Peak forward surge current tp=10ms, IFSM 30 A
half sinewave
Average forward current IFAV 1.5 A
Junction and storage Tj=Tstg 55...+150 C
temperature range
Pulse energy in avalanche mode, I(BR)R=1A, Tj=25C ER 20 mJ
non repetitive
(inductive load switch off)

Maximum Thermal Resistance

Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction lead TL=const. RthJL 25 K/W
Junction ambient mounted on epoxyglass hard tissue RthJA 150 K/W
mounted on epoxyglass hard tissue, 50mm2 35mm Cu RthJA 125 K/W
mounted on Aloxidceramic (Al2O3), 50mm2 35mm Cu RthJA 100 K/W

Document Number 86010 www.vishay.de FaxBack +1-408-970-5600

Rev. 3, 24-Jun-98 1 (5)
BYG21
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Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage
g IF=1A VF 1.5 V
IF=1.5A VF 1.6 V
Reverse current VR=VRRM IR 1 mA
VR=VRRM, Tj=100C IR 10 mA
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A trr 120 ns

Characteristics (Tj = 25_C unless otherwise specified)

100 100
I R Reverse Current ( mA )

10 IF Forward Current ( A ) 10

1 1 75C
25C
VR = VR RM Tj = 125C
0.1 0.1

0.01 0.01
0 40 80 120 160 200 0 1 2 3 4
94 9347 Tj Junction Temperature ( C ) 94 9348 VF Forward Voltage ( V )

Figure 1. Typ. Reverse Current vs. Junction Temperature Figure 3. Typ. Forward Current vs. Forward Voltage

600
I FAV Average Forward Current ( A )

2.0 Tamb= 125C

trr Reverse Recovery Time ( ns )

500
100C
1.6
RthJA=25K/W 400 75C
1.2 50C
300
25C
0.8 100K/W 200
125K/W
0.4 100
150K/W IR=0.5A, iR=0.125A
0 0
0 40 80 120 160 200 0 0.2 0.4 0.6 0.8 1.0
94 9345 Tamb Ambient Temperature ( C ) 94 9349 IF Forward Current ( A )

Figure 2. Max. Average Forward Current vs. Figure 4. Max. Reverse Recovery Time vs.
Ambient Temperature Forward Current

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 BYG21
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200
Qrr Reverse Recovery Charge ( nC )

Tamb= 125C
100C
150
75C

50C
100

25C

50

IR=0.5A, iR=0.125A
0
0 0.2 0.4 0.6 0.8 1.0
94 9350 IF Forward Current ( A )

Figure 5. Max. Reverse Recovery Charge vs. Forward

Current
Z thp Thermal Resistance for Pulse Cond. (K/W)

1000

125K/W DC
100
tp/T=0.5

tp/T=0.2

tp/T=0.1
10
tp/T=0.05

tp/T=0.02
Single Pulse
tp/T=0.01
1
105 104 103 102 101 100 101 102
94 9339 tp Pulse Length ( s )

Figure 6. Thermal Response

Document Number 86010 www.vishay.de FaxBack +1-408-970-5600

Rev. 3, 24-Jun-98 3 (5)
BYG21
Vishay Telefunken
Dimensions in mm

14275

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 BYG21
Vishay Telefunken
Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 86010 www.vishay.de FaxBack +1-408-970-5600

Rev. 3, 24-Jun-98 5 (5)