World Abstracts on Microelectronics and Reliability
Design considerations of hybrid integrated active RC filters.
A. HESZn~OER and E. SIMONYI.Prec. of the 5th colloquium
on microwave communication. Vol. II. Akademial Kiado,
Budapest. p. 131. A generalization of the Q multiplier
structure is presented for realising widely differing pole Q
factors by using elements of a standard building block
family of identical low Q values. The properties of the
modified Sehoeflter's sensitivity index extended to integrated
ARC networks are examined.
A thin-film multilayering technique for hybrid microcircuits. F.
Z. KE~s~ and R. Y. SCAPPLE.Solid St. Techn. 44 (May 1974).
A novel process for fabricating multilayer thin-film hybrid
microcircuits on ceramic substrates is described. The
process is simple, economical, and compatible with existing
hybrid processing technology. Via holes formed in an organic
insulating layer are used to provide electrical through-
connections between the top and bottom conductor levels.
Photoprintable materials and processing equipment for
thick-film microcircuitry. J. E. JOLLEY, R. V. WEAVER,
J. H. WELLS, J. J. FELTENand D. W. ROE. Solid St. Techn.
33 (May 1974). FODEL* Photoprintable Compositions are
unique thick-film materials capable of resolving 2-rail
gold conductor lines and 5-rail vias in low-K dielectric
layers. The materials, dispersions of particulate metals and
inorganic oxides in a photosensitive vehicle system, are
applied to ceramic substrates by screen printing. Patterns
are defined by selectively exposing the coatings to ultraviolet
light through a photomask and washing away unexposed
areas with an organic solvent. A mask alignment/exposure
system and solvent spray developer have been developed
for these process steps. Processing is completed by firing in
air. Alternate layers of conductors and dielectric may be
used to fabricate multilayer structures. Applications under
investigation include transmission lines for microwave
integrated circuits and interconnections for arrays of
monolithic integrated circuits.
A hybrid integrated silicon diode array for visible earth-
horizon sensing. F. J. BACHNEg, R. A. COHEN, R. W.
MOUNTAIN, W. H. McGONAGLE and A. G. FOYT. Prec.
IEEE 24th Electronic Components Conference, Washington
D.C. 262 (13-15 May 1974), An earth-horizon sensing
device, operating principally in the visible portion of the
spectrum, has been designed, fabricated and tested for use
in MIT, Lincoln Laboratory's LES 8/9 communications
satellites as part of the system which maintains the satellites'
orientation with respect to earth. The complete hybrid
circuit, shown schematically in Figure 1, consists of four
0.226 0.338 in. silicon chips mounted on a 2.0 2.0 circuits and such an application requires novel design
0.025 in. 99.5 % alumina substrate. Each of the four silicon
chips contains eight photodiodes whose active area is
0.032 0.170 in.
9. ELECTRON, ION AND LASER BEAM TECHNIQUES
*Electron Beam Evaporated alumlnlum oxide gate silicon
transistors. Technical Rept. CHENO, CHANG-CHINO. New
Mexico Univ. Albuquerque Bureau of Engineering Research
EE212(73)ONR-005. (Oct. 1973). Aluminum oxide films
prepared by the electron beam evaporation of A1203 tablets
were studied in metal-insulator-semiconductor devices.
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Design of precision thin film resistive metworks. G. L.
BREDENKAMP. Microelectron. & Reliab. 13, 49 (1974).
Untrimmed resistor networks having relative tolerances
better than +0-05 per cent can be designed by eliminating
the effect of both the resistivity distribution across the
substrate and also that of undercutting during etching. The
design rules for achieving this are set out.
Thermal triggering of shock; crystallization in sputtered Ge
films. K. J. CALLANAN,A. MATSUDA,A. MXNEO,T. KUROSU
and M. KtKUCHI. Solid St. Comm. 15, 119 (1974). Thermal
triggering of shock-crystallization in sputtered Ge films
has been achieved through localized heating by a d.c.
current. Electrical conductance in sputtered films has also
been investigated.
Indefinite admittance matrix of a 5-layer thin-film integrated
structure. A. K. KAMALand K. U. AHJ~D. Microelectron. &
Reliab. 13, 229 (1974). The advent of integrated electronic
devices has aroused keen interest in the study of the properties
of muitilayer thin-film structure. A variety of network
functions may be derived from the indefinite admittance
matrix of a multiterminal multilayer structure. With the
objective in view, the indefinite admittance matrix of a
five-layer structure (consisting of three resistive layers
separated from one another by two dielectric layers)
governed by a second-order linear differential equation is
evaluated taking into account the parasitic capacitances
invariably present among the constituent layers.
Hybrid microelectronies in military applications. GRAHAM
BIDDULPH. Electronic components 17 (10 Sept. 1974). In
military applications the choice of technology or mixture of
technologies depends upon many factors and is usually
determined following detailed discussions between engineers
from the hybrid manufacturer and systems house. In
addition to the circuit schematic, test specification, per-
formance data and packaging concept, full consideration is
given to the environmental specifications, mechanical
performance required and level of in-line process
conditioning.
The application of lumped element techniques to high
frequency hybrid integrated circuits. R. E. CHADDOCK.
The Radio and Electronic Engineer. 44, 8, 414 (1974).
Lumped element techniques as employed in a production
range of high-frequency hybrid power amplifiers are
described in the first part of this paper. The lumped inductor
is a component not commonly employed for integrated
considerations. In the second part, some of these are identified
from the theory of lumped inductors and compared with the
practical case.
The structure of A1203 films is amorphous with a density of
2.25 gm/cc. The film conductivity is smaller than 5 x 10 to
the 14th power (ohm-cm) and the breakdown strength is
higher than 1,300,000 V/era. The average relative dielectric
constant is about 7. The interface surface states of the MIS
sample are small in the middle of the forbidden band,