FDS8958A

January 2002

FDS8958A
Dual N & P-Channel PowerTrench MOSFET
General Description Features
These dual N- and P-Channel enhancement mode Q1: N-Channel
power field effect transistors are produced using
Fairchild Semiconductors advanced PowerTrench 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V
process that has been especially tailored to minimize RDS(on) = 0.040 @ VGS = 4.5V
on-state ressitance and yet maintain superior switching
performance. Q2: P-Channel
These devices are well suited for low voltage and -5A, -30V RDS(on) = 0.052 @ VGS = -10V
battery powered applications where low in-line power
loss and fast switching are required. RDS(on) = 0.080 @ VGS = -4.5V

Fast switching speed

High power and handling capability in a widely
used surface mount package

Q2
DD2 5 4
DD2
DD1 6 3
D1
D
Q1
7 2
SO-8 G2
S2 G
G1 S 8 1
S1 S
Pin 1 SO-8 S

Absolute Maximum Ratings TA = 25C unless otherwise noted

Symbol Parameter Q1 Q2 Units

VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage 20 20 V
ID Drain Current - Continuous (Note 1a) 7 -5 A
- Pulsed 20 -20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C

Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS8958A FDS8958A 13 12mm 2500 units

2002 Fairchild Semiconductor Corporation FDS8958A Rev D1(W)

 FDS8958A
Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown VGS = 0 V, ID = 250 A Q1 30 V
Voltage VGS = 0 V, ID = -250 A Q2 -30
BVDSS Breakdown Voltage ID = 250 A, Referenced to 25C Q1 25 mV/C
TJ Temperature Coefficient ID = -250 A, Referenced to 25C Q2 -22
IDSS Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V Q1 1 A
Current VDS = -24 V, VGS = 0 V Q2 -1
IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA
IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V All -100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A Q1 1 1.6 3 V
VDS = VGS, ID = -250 A Q2 -1 -1.7 -3
VGS(th) Gate Threshold Voltage ID = 250 A, Referenced to 25C Q1 -4.3 mV/C
TJ Temperature Coefficient ID = -250 A, Referenced to 25C Q2 4
RDS(on) Static Drain-Source VGS = 10 V, ID = 7 A Q1 21 28 m
On-Resistance VGS = 10 V, ID = 7 A, TJ = 125C 32 42
VGS = 4.5 V, ID = 6 A 27 40
VGS = -10 V, ID = -5 A Q2 41 52
VGS = -10 V, ID = -5 A, TJ = 125C 58 78
VGS = -4.5 V, ID = -4 A 58 80
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V Q1 20 A
VGS = -10 V, VDS = -5 V Q2 -20
gFS Forward Transconductance VDS = 5 V, ID = 7 A Q1 19 S
VDS = -5 V, ID =-5 A Q2 11
Dynamic Characteristics
Ciss Input Capacitance Q1 Q1 789 pF
VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2 690
Coss Output Capacitance Q1 173 pF
Q2 Q2 306
Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz Q1 66 pF
Q2 77

FDS8958A Rev D1(W)

 FDS8958A
Electrical Characteristics (continued) TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time Q1 Q1 2.2 4.4 ns
VDD = 10 V, ID = 1 A, Q2 6.7 13.4
tr Turn-On Rise Time VGS = 10V, RGEN = 6 Q1 7.5 15 ns
Q2 9.7 19.4
td(off) Turn-Off Delay Time Q2 Q1 11.8 21.3 ns
VDD = -10 V, ID = -1 A, Q2 19.8 35.6
tf Turn-Off Fall Time VGS = -10V, RGEN = 6 Q1 3.7 7.4 ns
Q2 12.3 22.2
Qg Total Gate Charge Q1 Q1 16 26 nC
VDS = 15 V, ID = 7 A, VGS = 10 V Q2 14 23
Qgs Gate-Source Charge Q1 2.5 nC
Q2 Q2 2.2
Qgd Gate-Drain Charge VDS = -15 V, ID = -5 A,VGS = -10 V Q1 2.1 nC
Q2 1.9
DrainSource Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current Q1 1.3 A
Q2 -1.3
VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Q1 0.74 1.2 V
Voltage VGS = 0 V, IS = -1.3 A (Note 2) Q2 -0.76 -1.2
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 78/W when b) 125/W when c) 135/W when mounted on a

mounted on a mounted on a .02 in2 minimum pad.
2
0.5 in pad of 2 oz pad of 2 oz copper
copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDS8958A Rev D1(W)

 FDS8958A
Typical Characteristics: Q1

30 2.4
VGS = 10V
4.0V 2.2 VGS = 3.0V
7.0V 3.5V
2.0
ID, DRAIN CURRENT (A)

5.0V
20
4.5V 1.8
3.5V
1.6
3.0V 4.0V
1.4
10 4.5V
5.0V
1.2 6.0V
7.0V
1.0 10V
2.5V
0.8
0
0 1 2 3 4 5 0 6 12 18 24 30

VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.9 0.09
ID = 7A ID = 7A
VGS = 10V 0.08
1.6
0.07

0.06
1.3

0.05 o
TA = 125 C
1.0
0.04

0.03
0.7
o
0.02 TA = 25 C

0.4
0.01
-50 -25 0 25 50 75 100 125 150
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

30 100
VGS = 0V
VDS = 10V
25 25oC
TA = -55oC 10
ID, DRAIN CURRENT (A)

o
TA = 125 C
20
125oC 1

15 25 C
o

0.1
10
o
-55 C
0.01
5

0.001
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS8958A Rev D1(W)

 FDS8958A
Typical Characteristics: Q1

10 1200
ID =7A VDS = 5V f = 1MHz
VGS, GATE-SOURCE VOLTAGE (V)

10V VGS = 0 V
8
15V 900
CISS

6
600
4

300
2 COSS

CRSS
0 0
0 4 8 12 16 0.0 5.0 10.0 15.0 20.0
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
RDS(ON) LIMIT
SINGLE PULSE
100s
40 RJA = 135C/W
10 1ms
10ms TA = 25C

100ms 30
1s
1 10s
DC 20
VGS = 10V
0.1 SINGLE PULSE
o
RJA = 135 C/W 10
o
TA = 25 C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000

VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

FDS8958A Rev D1(W)

 FDS8958A
Typical Characteristics: Q2

30
2.5
VGS = -10.0V

25 VGS = -3.5V
-7.0V
-5.0V
2
20 -6.0V
-4.0V -4.0V
15 -4.5V
1.5 -5.0V
-3.5V -6.0V
10 -7.0V
-10.0V
1
5 -3.0V

0
0.5
0 1 2 3 4 5
0 6 12 18 24 30
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.2
ID = -5A ID = -5A
VGS = -10V
1.4
0.15

1.2
0.1
1.0 o
TA = 125 C

0.05 o
0.8 TA = 25 C

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10

TJ, JUNCTION TEMPERATURE ( C)

o -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.

30 100
VDS = -10V o VGS = 0V
TA = -55 C
25
10
o
25 C
20 TA = 125 C
o

1
o
15 25 C
o
125 C 0.1 o
-55 C
10

0.01
5

0 0.001
1.5 2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.

FDS8958A Rev D1(W)

 FDS8958A
Typical Characteristics: Q2

10 1000
ID = -5.3A f = 1 MHz
VDS = -5V -10V
-VGS, GATE-SOURCE VOLTAGE (V)

VGS = 0 V
8 800
CISS
-15V

6 600

4 400 COSS

2 200

CRSS
0 0
0 4 8 12 16 0 5 10 15 20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

100 50
RDS(ON) LIMIT
1ms 100 s SINGLE PULSE
40 RJA = 135C/W
10 10ms
TA = 25C
100ms
1s 30
1 10s
DC 20
VGS = -10V
0.1 SINGLE PULSE
o
RJA = 135 C/W 10
o
TA = 25 C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE

D = 0.5
RJA(t) = r(t) * RJA
TRANSIENT THERMAL

0.2
0.1 RJA = 135oC/W
0.1
RESISTANCE

0.05
P(pk)
0.02
0.01 t1
SINGLE PULSE t2
0.01
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS8958A Rev D1(W)

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
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