M.Tech.

- ECE (Microelectronics & VLSI Designs) Common Syllabus

(Paper codes Will be introduced latter)

Semester – 1:
Paper Paper Paper Name Instruction Hours Credit
Type Code L T P
C-Th Advanced Engg Maths 3 1 0 4
C-Th VLSI Device & Modelling 4 0 0 4
C-Th Digital IC Design 4 0 0 4
C-Th Microelectronic Technology & IC 4 0 0 4
Fabrication
E-Th Elective – I: 4 0 0 4
1. Bioelectronic System
2. Embedded System Fundamentals
3. AI & Neural Networks
4. Advanced Digital Communication
Total of Theory 19 1 0 20
C-Pr CAD Tools for VLSI Design 0 0 3 2
E-Pr 1. Microelectronic Technology 0 0 3 2
2. Embedded Systems
Total of Practical 0 0 6 4

S Seminar 0 2 0 1
Total 19 3 6 25

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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Semester – 2:
Paper Paper Paper Name Instruction Hours Credit
Type Code
L T P
C-Th Processor Architecture for VLSI 4 0 0 4
C-Th Digital Signal Processing & Aplications 4 0 0 4
C-Th Analog IC Design 4 0 0 4
E-Th Elective – II: 4 0 0 4
1. Quantum & Nano-science
2. Error Control & Coding
3. Sensors
4. Physical Design & Testing
E-Th Elective – III: 4 0 0 4
1. RF Circuits & Systems
2. Low Power VLSI Design
3. Mobile Communication
4. Advanced Micro & Nano Devices
5. Advanced FET Technology
Total of Theory 20 0 0 20
E-Pr 1. Microelectronic Technology 0 0 3 2
2. Embedded Systems
Total of Practical 0 0 3 2
S Term paper leading to Thesis 0 1 0 1
V Comprehensive Viva Voce 4
Total credit 20 1 3 27

Semester – 3:
Paper Paper Paper Name Instruction Hours Credit
Type Code
L T P
C-Th 1. Project Management or 4 0 0 4
2. Teaching & Reseach Methodologies
AE- Elective Theory or Practical Papers to be 4 0 0 4
Th/Pr suggested by College.
Total of Theory 8 0 0 4+4
S Dissertation – Part I 0 2 0 1
Total of Credit 25

Semester – 4:
Paper Paper Paper Name Instruction Hours Credit
Type Code
L T P
S Dissertation – Part II (Completion) 24 6
Post submission defence of dissertation 18
Total of Credit 24

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
(Paper codes Will be introduced latter)

Details:

VL SI De vi c e s & M o del l in g [ Se m - 1] 3 ( L ) ( 4 0 l ect ure s )

P r e- r e q ui si te : K n ow l e d g e of ba si c p h ys ic s of di o de s, B J Ts, FE Ts, MO S str uc t ur e s.

Se m ic o n d u c t or s, J u nc ti o n s a n d MO S FE T O ve r vi e w: I n tr od u c ti on , S e mi c on d u c t or s, C on d u c ti on ,
C on t ac t P ot e n ti al s, P- N J u nc ti on , O ver vi e w of t he MO S Tr a nsi st or.

B a si c De vi c e P h ys ic s:
Tw o Ter m i na l MO S Str u ct ur e : Flat - ba n d v ol ta g e, P ote nt ia l bal a nce & c ha rge ba la n c e, E ff e c t of
Ga t e- su bs tr a te v ol ta ge o n s ur fa ce c on d i ti on , In v e r si on , Sma ll si gn a l ca p aci ta nc e;
T hr ee Te r mi n al MO S Str uc t u re : C on ta c t i n g t he i n ver si on l a ye r, B od y eff ect , Re gi on s o f
i n ve r si on , P i nc h- off v ol ta ge ;
F ou r Te r m i na l MO S Tr a n sis t or : Tr a n si st o r r e g i on s of op er at i on , ge n e r al c h ar ge s hee t m od e l s ,
r e gi on s of i n ver s i on i n ter m s of ter m i nal v ol t a ge , st r on g i n ve r si on , wea k i n ver s i on , m od e r a te
i n ve r si on , i nt er p ola ti on m od e l s, eff ec ti ve m ob ili t y, te m p er a t ure eff ect s, bre a kd ow n p- c h a n ne l
M OS FE T, e n h a nc e m e nt a n d de pl et i on t yp e , mod e l par a me te r va l ue s, m o de l a cc ura c y e tc;
S ma ll d i me n si on eff e ct s: c ha n ne l l e n gt h mo d u l ati on , b ar r i er l ow er i n g, tw o di m e n si on a l c h a rge
s har i n g a n d t hr e s h ol d v ol ta ge , p u n c h-t hr ou gh , car r ier v e l oc it y sat ur a ti on , h ot ca r r ie r e ff e ct s,
sca li n g, eff ec t s of sur f ace a n d dr a i n se ri e s r es is ta nc e , eff ec t s d u e t o t h i n ox i de s a n d hi gh
d o p i n g. S u b t hr es h ol d r e gi o n s.
C MO S De vic e D esi g n : S cal i n g, Thr e sh ol d v ol ta g e, MOSFE T c h a n ne l l e n gt h ;
C MO S Pe rf or m a nce Fa ct or s: B as ic C M OS c ir c u it el e me n ts; pa r a si tic e le m e nt s ; se n si t i vi t y o f
C MO S de la y t o de vi c e p ar a me te r s; p er f or m a nce f act or s of a d v a nc e d C MOS d e vi ce s.
B i p ol ar De vi ce s, De s i gn & P er f or ma n c e:
O ut c ome : St u d e nt w il l be a b le t o m od e l de vi c es a n d st u d y t h eir pe rf or m a nce i n a na l o g a n d
d i gi t al, c ir c ui ts .
As si gn me nt : Si m ple Cir cu it si m ul at i on u si n g Sp ic e.

Text:
Fundamentals of Modern VLSI Devices by Yuan Taur & Tak H. Ning (Cambridge)
The MOS Transistor (second edition) Yannis Ts i vi di s ( Ox f or d)
R ef er e nc e :
CM O S An al o g C irc uit De si gn ( se c on d e di ti o n) Phi ll ip E. Al le n a n d D o ugl a s R. H o l be r g
( O xf or d)

Di g it al I C D esi gn [ Se m – 1] 3 ( L ) 1( T) 2 ( P )
Prerequisite: Overview of CMOS VLSI fabrication, CMOS process steps; fabrication; yield; design rules for custom
layout; Layout - hand layout, graphical layout, low-level language; design rule checking; stick diagrams; placement of
cells; simulation of design; function generation from masks; test pattern generation; structured design methodology
for VLSI; hierarchical design techniques and examples. Concept of Mask design, Mask layout, Stick diagram,
Standard cell Vs Custom design,

1. Specification Methods: Language based methods including VHDL/Verilog, hierarchical state machine
descriptions such as State Charts, and Petri net based methods. Functional languages for formal verification.
(Laboratory Practises: RTL description of combinational and sequential circuits using Verilog/VHDL and
simulation of the designs using open source and propietary softwares)
2. Synthesis tools: High level synthesis; Scheduling allocation, communication and control.(Laboratory Practises
: Synthesis of the RTL designs using an industry standard synthesis tool and power and timing analysis of the
synthesised designs)
3. Module Generation: Finite State machines, state encoding, parameterised blocks PLA, RAM, ROM generation.
Gate Level Synthesis; Binary Decsision Diagrams, Logic minimisation, optimisation and
retargetting.(Laboratory Practises : Simulation and Synthesis of finite state machines)
4. Layout Synthesis: Placement; simulated annealing, genetic algorithms, constructive methods. routing; nets,
layers, Lees algorithms, cost functions, channel routing. Examples of a channel router with placement

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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expansion.
5. Case Study: Synthesis of a chosen algorithm to the gate level using CAD tools. (Laboratory Practices ) Case
Study Lecture: Design of MSI chip using proprietary CAD system; use of circuit description language; layout
considerations. (Laboratory Practises : A complete VLSI design example : from RTL to GDSII)
6. 6.Complex gates: pseudo NMOS; dynamic logic; dynamic cascaded logic; domino logic; 2 and 4 phase logic;
pass transistor logic. Control and timing; synchronous and asynchronous; self-timed systems; multi-phase
clocks; register transfer; examples of ALU, shifters, and registers. (Laboratory Practises: Schematic and
layout creation of basic and complex gates based on different design libraries). E m er gi n g c on c e pt s:
S yn c hr on i se r s a n d ar bei te r s, n e tw or ks on a c h i p.
7. Effects of scaling circuit dimensions: physical limits to develop fabrication. Optional extended course work for
final year students, using VLSI design software to produce a chip to meet a given specification; the chip may
be fabricated if the design is successful. To study the different stages in the design of integrated chip using
VLSI design software. The design is to meet a given specification.
Reading List
1. CAD for VLSI: Author: Russell, G, Kinniment, D.J., Chester, E.G., and McLauchlan, M.R.
Notes: Van Norstrand Rheinhold, 1985.
2. Tutorial on High Level Synthesis
Author: McFarland, M.C., Parker, A.C and Camposano R
Notes: Proc 25th ACM/IEEE Design Automation Conf pp330-336
3. CMOS VLSI Design A Cir c ui t s a n d S ys t e ms Pe rs pe c ti ve ( 3r d E di ti on ) A ut h or Ne il We ste a n d
David Harris

Microelectronics Technology & IC Fabrication: 3(L) (40 lectures)

Cleanroom technology - Clean room concept – Growth of single crystal Si, surface contamination, cleaning & etching.
(Laboratory Practices : Cleaning of p-type & n-type Si-wafer by solvent method & RCA cleaning)
Oxidation – Growth mechanism and kinetic oxidation, oxidation techniques and systems, oxide properties, oxide
induced defects, charactrisation of oxide films, Use of thermal oxide and CVD oxide; growth and properties of dry and
wet oxide, dopant distribution, oxide quality; (Laboratory Practices : Fabrication of MOS capacitor)
Solid State Diffusion – Fick's equation, atomic diffusion mechanisms, measurement techniques, diffusion in polysilicon
and silicon di-oxide diffusion systems.
Ion implantation – Range theory, Equipments, annealing, shallow junction, high energy implementation.
Lithography – Optical lithography, Some Advanced lithographic techniques.
Physical Vapour Deposition – APCVD, Plasma CVD, MOCVD.
Metallisation - Different types of metallisation, uses & desired properties.(Laboratory Practices : Metallisation &
Schottky diode fabrication)
VLSI Process integration. (3+3+3+3+3+3+3+3+3+3+3+3+4 = 40 hrs theory)

Reading List
8. Semiconductor Devices Physics and Technology, Author: Sze, S.M.; Notes: Wiley, 1985
9. An Introduction to Semiconductor Microtechnology, Author: Morgan, D.V., and Board, K
10. The National Technology Roadmap for Semiconductors , Notes: Semiconductors Industry Association,
SIA, 1994
11. Electrical and Electronic Engineering Series VLSI Technology, Author: Sze, S.M. Notes: Mcgraw-Hill
International Editions

Electives:

Embedded Systems Fundamentals

Introduction to embedded systems:

Concept, Difference between embedded computer systems and general purpose computer Systems,
Classification, Characteristics, Applications
Overview of Embedded Processors:
Classification:
• GPP, ASIP, SPP, ASSP, MULTI-CORE, SOFT-CORE
-Examples

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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Overview of Embedded Memories & Interfacing:
SRAM, DRAM, EEPROM, FLASH, DUAL-PORT, CACHE, INTERLEAVED
MEMORIES
Overview of Embedded Networking & Standards:
RS232, RS485, SPI, USB, ISA, PCI, I2C, CAN, LIN
IrDA, Bluetooth, Zigbee.
Overview of Embedded Sensors and Transducers:
Pressure, Temperature, Acceleration, Image, Rain, Proximity, Hall-effect,
Artificial eyes
Overview of I/P-O/P devices & Interfacing
Keypad, TWS, JoyStick, SSL, LCD, VGA
Case study: The Weather Station

Advanced digital communication

• Pre-requisites:
o Fourier Expansion, Fourier transform, Normalized power spectrum, Power spectral density, Effect of
transfer function on output power spectral density, Perseval’s theorem.
o Autocorrelation & cross correlation between periodic signals, cross correlation power.
o Relation between power spectral density of a signal, its autocorrelation function and its spectrum.
o Distinction between a random variable and a random process.
o Probability, sample space, Venn diagramme, joint probability, bay’s theorem, cumulative probability
distribution function, probability density function, joint cumulative probability distribution function, joint
probability density function.
o Mean/average/expectation of a random variable and of sum of random variables.
o Standard deviation, variance, moments of random variables, - explanation with reference to common
signals.
o Tchebycheff’s inequality.
o Gaussian probability density function – error function & Q function
o Central limit theorem.

• Spectral analysis of signals:

o Orthogonal & orthonormal signals. Gram-Schmidt procedure to represent a set of arbitrary signals by a set
of orthonormal components; - numerical examples.
o The concept of signal-space coordinate system, representing a signal vector by its orthonormal
components, measure of distinguishability of signals.

• Characteristics of random variables and random processes:

o Common probability density functions, - Gaussian, Rayleigh, Poisson, binomial, Rice, Laplacian, log-
normal, etc.
o Probability of error in Gaussian Binary symmetric channel.
o Random processes – time average, ensemble average, covariance, autocorrelation, cross correlation,
stationary process, ergodic process, wide sense stationary process.
o Power spectral density and autocorrelation, power spectral density of a random binary signal.
o Linear mean square estimation methods.

• Revision of source coding: Sampling theorem, instantaneous/ flat top/ natural sampling, band width of PAM signal,
quantization, quantization noise, principle of pulse code modulation, delta modulation & adaptive delta modulation.

• Parametric coding/ hybrid coding/ sub band coding: APC, LPC, Pitch predictive, ADPCM, voice excited vocoder,
vocal synthesizer.

• Line codes:
o UPNRZ, PNRZ, UPRZ, PRZ, AMI, Manchester etc.
o Calculation of their power spectral densities.
o Bandwidths and probabilities of error Pe for different line codes.

• Revision of digital modulation: Principle, transmitter, receiver, signal vectors, their distinguish ability (d) and signal

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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band width for BPSK, QPSK, M-ARY PSK, QASK, MSK, BFSK, M-ARY FSK.

• Spread spectrum modulation:

o Principle of DSSS, processing gain, jamming margin, single tone interference, principle of CDMA, MAI
and limit of number of simultaneous users.
o Digital cellular CDMA system: model of forward link, reverse link, error rate performance of decoder
using m-sequence chip codes.
o Properties of m-sequences, their generation by LFSR, their PSDs, limitations of m-sequences.
o Gold sequence, Kasami sequence – generating the sequences, their characteristic mean, cross correlation
and variance of cross correlation, their merits and limitations as chip codes in CDMA.

• Multiplexing & multiple access:

o TDM/TDMA, FDM/FDMA, Space DMA, Polarization DMA, OFDM, ALOHA, Slotted ALOHA,
Reservation ALOHA, CSMA-CD, CSMA-CA – basic techniques and comparative performances e.g.
signal bandwidth, delay, probability of error etc.

• Noise:
o Representation of noise in frequency domain.
o Effect of filtering on the power spectral density of noise – Low pass filter, band pass filter, differentiating
filter, integrating filter.
o Quadrature components of noise, their power spectral densities and probability density functions.
o Representation of noise in orthogonal components.

• Characteristics of different types of channels:

o Gaussian, Poisson etc.

• Band limited channel:

o Characteristics of band limited channel, inter symbol interference (ISI) - it’s mathematical expression.
o Niquist’s theorem for signal design for no ISI in ideal band limited channel, Niquist’s criteria, raised
cosine pulse signals.
o Signal design for controlled ISI in ideal band limited channel, partial response signals, duobinary & partial
duobinary signals - their methods of generation and detection of data.
o Concept of maximum likelihood detection, log likely hood ratio.
o Detection of data with controlled ISI by linear transverse filters.
o Performance of minimum mean square estimation (MMSE) detection in channels with ISI.

• Base band signal receiver and probabilities of bit error:

o Peak signal to RMS noise output ration, probability of error.
o Optimum filter, it’s transfer function.
o Matched filter, it’s probability of error.
o Probability of error in PSK, effect of imperfect phase synchronization or imperfect bit synchronization.
o Probability of error in FSK, QPSK.
o Signal space vector approach to calculate probability of error in BPSK, BFSK, QPSK.
o Relation between bit error rate and symbol error rate.
o Comparison of various digital modulation techniques vis-à-vis band width requirement and probabilities
of bit error.

Text Books:
1. Digital communication, 4th ed. - J. G. Proakis, MGH International edition.
2. Principle of Communication Systems – Taub, Schilling, TMH
3. Digital and Analog Communication Systems, 7th ed. – Leon W. Couch, PHI.
4. Principles of Digital Communication – Haykin
5. Digital Communication – Zeimer, Tranter.
6. Principle of Digital communication - J. Das, S. K. Mallick, P. K Chakraborty, New Age Int.
7. Communication Systems, 4th ed. – A. Bruce Carlson, Paul B. Crilly, Janet C. Rutledge, MGH International edition.

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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8. Digital Communications, 2nd ed. – Bernard Sklar, Pearson Education.
9. Electronic Communications, 4th ed. – Dennis Roddy, John Coolen, PHI

Processor Architecture for VLSI

Fundamentals:
Components of (an embedded) computer, Architecture organization, Von-Neumann vs Harvard,
Microcoded vs hardwired, scalar and vector processors, Flynn’s taxonomy
CISC arch, the RISC movement, ISA arch, basic structure, pipelining, pipeline hazards and solutions, comparison,
merging RISC and CISC: the microchip PIC
Superscalar arch: parallel computation, Ways of parallelism, the IBM PowerPC
The DSP and Its Impact on Technology: Why a DSP is different. The evolving architecture
of a DSP
VLIW arch: the TI TMS320C6x, advancement to EPIC
Coprocessor Approach: Need for accelerators, Accelerators and different types
of parallelism, Processor architectures and different approaches to acceleration
General-Purpose Embedded Processor Cores: The ARM
Processors using course-grain parallelism: utilization of course-grain parallelism, chip-multiprocessors,
multithreaded processors, SMT proc
Customizable Processors and Processor Customization: A benefits analysis of processor customization, Using
microprocessor cores in SOC design, Benefiting from microprocessor extensibility, how microprocessor use differs
between SOC and board-level design
Run-Time Reconfigurable Processors: Embedded microprocessor trends, Instruction set metamorphosis,
Reconfigurable computing, Run-time reconfigurable instruction set processors, Coarse-grained reconfigurable
processors
Stream Multicore Processors: Introduction, Raw architecture overview
Asynchronous and Self-Timed Processor: Motivation for asynchronous design, The development of asynchronous
processors,

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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Ana l o g IC De si g n: [ Se m – II] 3( L ) 0 T) 0( P ) 3 Lec ture s

Recapitulation:
12. CMOS models for analog circuits - Small signal equivalent circuit, temperature effect and sensitivity,
overview of electrical noise. 2L
13. Analog subcircuits : CMOS switch, resistors, current source, sink, current mirror, voltage and current
references. 2L
14. MO S FET M od e ll i n g f or Cir c ui t Si m u la ti on : 2 L (Assignment using Spice)

3. C MO S A m pli f ie rs & C MO S O pe rat i o n A m plif i e rs: Ba sic c on c e p ts , P er f or m a nc e Pa r a me t er s,

O ne sta te OPA MP, Tw o st a ge OPA MP, Sta b il it y a n d P ha s e c omp e n s at i o n , Ca sc o d e O PA MP,
De si g n o f t w o- st a ge a n d Ca sc od e OPA MP, SP I C E si m u la ti on of A m p lif i er, Hi gh p er f o r m a nc e
C MO S OPA MP s, Micr op ow er OPA MP, 6 L + 6P
* De si g n e xa m p le s, ( S PI CE s i mu l at i o n – L a b or at or y )
2. Switch Capacitor circuits: Gen er a l c on si d er at i on s , S wit c he d c a pa c it or i nt e gr a t or s, Fi r st a n d se c n d
or d e r swi t c h e d c a p ac i t or f il ter c ir c ui ts, 2 L+ 3P
* De si g n e xa m p le s, ( S PI CE s i mu l at i o n – L a b or at or y )
3. D ata C o nve rt e r F und a m enta l s & Arc h ite ct ure : I d eal D/ A c on ver ter s, I de a l A /D c on ver te r,
Se r i al a n d Fla s h D/ A c on ver ter s a n d A /D c on ver te r s, Me di u m a n d H i gh Sp e e d c on ve r ter s,
O ver- sa m p l i n g c o n v er te r s, per f or m a nc e li m it at i on s , De s i gn c on s i der at i o n , SP I C E si m u la ti o n .
4L
4. Spe c i al C irc ui ts : C M OS v ol ta ge c on t r ol le d os cil la t ors , R i n g os ci ll a t o rs, P ha se l oc ke d l o op s
wit h p u m p p ha se c omp a r a t or s, Gm- C Ci r c ui t s.
* De si g n e xa m p le s, ( S PI CE s i mu l at i o n – L a b or at or y ) 4 L+ 6P
5. R F A na l o g C ir c ui t s & S u bc ir c ui t s: C a pac it or s a n d In d u c t or s i n VLS I cir c ui ts , Ba n d wi d t h
est i ma t i on te c h ni q u e s, De si gn of h i gh f re q u e nc y a m p li f ier s, De si gn of l ow n oi s e a m p lif ier s,
De si g n of Mi xer s o f R F p ow e r a mpl i fi er s, Ar ch it ec t u r e s o f r f r e c ei v er s a n d tr a n s mi tt er s.
6L
6 . Ca m p ar a t or s : C har ac t er i sa ti on , Tw o st ate op e n l o o p c o mp a r a t or s, Di scr e te t i me c om p ar at or s,
hi g h sp e e d c om p ar a t or c ir c ui t s, C MOS S /H c ir c u it s, 4L
* De si gn e xa m p le s, ( S PI CE s i mu l at i o n – L a b or at ory )

Text: The MOS Transistor (second edition) Yannis Tsi vi di s ( O xf or d)

R ef er e nc e : CM OS A nal o g C irc uit De si g n ( sec on d e d it i on ) Ph il li p E. Al le n an d D o u gl a s R.
H o lb er g ( Oxf or d)

Intended Knowledge Outcomes

Understand the main elements of hierarchical VLSI design namely interested circuit technology, approaches to system
design, architectural issues, design implementation and layout. The ability to analyse the effect of future integrated
circuit technologies on device parameters.

Intended Skill Outcomes

Ability to apply VLSI design methodology for the design of Application Specific Integrated Circuits.

Reading List
1. Principles of CMOS VLSI Design (Essential reading) Author: Weste N and Eshraghian K
Notes: Addision Wesley 1985
2. Introduction to NMOS and CMOS VlSI Systems Design (Essential reading) Author: Mukherjee A
Notes: Prentice-Hall 1986
3. Introduction to VLSI Systems (Essential reading)
Author: Mead and Conway Notes: Addison Wesley D C & Co

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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AI & Neural Networks
Overview of AI - Introduction, hierarchical perspective and foundations. Problems of AI, AI techniques , Tic-Tac-Toe
problem.
Basic problem solving methods: Production systems-State space search-Control strategies- Heauristic search
techniques-Forward and backward reasoning-Hill climbing techniques-Best search.
Knowledge representation: Predicate logic- Resolution Question answering-Nonmonotic reasoning-Statistical and
probabilistic reasoning-Semantic nets-Frames -Scripts.
Neural Network: Biological neurons and brain, mathematical models of neuron, basic structure of a neural network,
Learning rules, ANN training, back propagation algorithm, Hopfield nets and application of Neural Network.
Introduction to expert system-Design of an expert system-Fuzzy logic and neural network in control system, modeling
estimation and design methodologies and real time application of Intelligent control system like TRMS, Robot and
Magnetic levitation system.
AI languages : Important characteristics of AI languages-PROLOG.
Application of AI & neural networks in VLSI and embedded systems.

Electives- II:

Sensors

UNIT 1

Principles of Physical and Chemical Sensors: Sensor classification, Sensing mechanism of Mechanical, Electrical,
Thermal, Magnetic, Optical, Chemical and Biological Sensors.
Sensor Characterization and Calibration: Study of Static and Dynamic Characteristics,
Sensor reliability, aging test, failure mechanisms and their evaluation and stability study.

UNIT 2
Sensor Modeling: Numerical modeling techniques, Model equations, Different effects on
modeling (Mechanical, Electrical, Thermal, Magnetic, Optical, Chemical and Biological)
and examples of modeling.
Sensor Design and Packaging: Partitioning, Layout, technology constraints, scaling.

UNIT 3
Sensor Technology: Thick and thin films fabrication process, Micro machining, IOC
(Integrated Optical circuit) fabrication process, Ceramic material fabrication process, Wire bonding, and Packaging.
Sensor Interfaces: Signal processing, Multi sensor signal processing, Smart Sensors,
Interface Systems. Sensor Applications: Process Engineering, Medical Diagnostic and Patient monitoring,

UNIT 2
Introduction, Scaling, MEMS Markets and Applications MEMS materials and fabrication methods, with emphasis on
silicon micromachining
Process simulation: basic lithography, deposition, and etching processes for mems.

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
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Phy s ic al D e si gn & Te st i n g: [ H e a vy sy l la bu s; N eed s mo d if ic at i on]

Te st in g:
Te st i n g: W h y t es t? Diffe r en ce b et wee te st i n g & ver if i c a ti on .
Ph ysi c a l f a ul ts & t h ei r mod e li n g: Fa u lt e q ui va l e n ce, d omi n a n ce & c ol la p si n g.
Fa u lt si mu l a ti on : pa r al le l, de d uc ti ve & c on c ur re nt te c h ni q u es , cr it i ca l p a t h t r ac i n g.
Te st pa tte r n g e ner a ti on f o r c omb i n a ti on a l c ir c u it s: B o ol ea n diff er e nce , D- a l g or i t h m, P od e m, etc ,
ex h a us ti ve , r a n d o m , wei gh t e d t e st pa tt er n ge n e ra ti on , a l ia si n g a n d i t s eff ct s on f a u lt c o ver a ge .
Te st p at ter n g e n er ati on f or s e q ue nt ia l c ir c u i t s: ad- h oc a n d str uc t ur e s te ch n i q ue s sc a n pa t h a n d
LS S D, b ou n d a r y s ca n .
B ui lt- i n se lf t e st tec h n i q ue s:
De si gn of te s ta bi li t y:
Ve rif ic a ti o n:
I n tr o d u ct i on : Wh y ve r if y? W ha t i s a t e st be n c h?
Wh a t i s bei n g ve r if ie d: For ma l v e r if ica ti on , e q ui va l e nc e c h ec k i n g, m o de l c he c ki n g, f u nc ti on a l
ver if i ca t i on , di ff e r e nt ap pr oa c he s t o ve r if ic at i on , b la c k b ox , w hi te b ox , gre y b ox , d e si g n
ver if i ca t i on a n d r e u se.
Ver if ic a ti on t o ol s : Li n t in g t o ol s , si mu la t or s, v e r if i ca ti on i n t el lec t ua l pr op e t y ( V IP ) – ar t of
ma ki n g V IP, wa vef or m v iew er s, c od e & f u n c ti on al c o ve r a ge s.
La n gu a ge s: O ut l i ne of e a n d Ver a, te mp or a l m o de l s & a s se r ti on s, Li n e ar Ti me Te m p or a l Lo gi c
( LT L) , C omp u t a ti on Tr e e Lo gi c ( C TL) , a sse r t i o n.
Th e ver if ica t i on p la n: R ole of ver if i ca ti on pl a n, le ve l s of ver i f ic a ti on , d ir c te d te st be nc h
ap pr oa c h, c o ve ra ge - ba se d r a n d om - ba se d a p pr oa c h ( C DV) , ge ne r a t or s, m o ni t o r s & c he c ke r s.
Ver if ic a ti on pr a c t ice s & a r ch it ec t u r e: o ver vi e w of r ef er e n c e ver if ic a ti on me t h od ol o g y ( RV M) &
ver if i ca t i on m et h od ol o g y m a n u al ( V MM) .
De si gn f or ver if ic at i on :

El ec t i v e – I II

RF circuits & Systems

Characterization of materials used for different RF electronic devices.

Heterostructure-overview.
High frequency transistors- BJT,field effect transistors .
Basics of resonant tunneling, RT devices.
Introduction to RF/Microwave Concepts .Active and passive RF components , circuit representations of two port
RF/MW networks scattering and T parameters , smith chart.
Basic Considerations in Active Networks- Stability and noise considerations, Gain Considerations in Amplifiers.
Active Networks - Linear and Nonlinear Design, RF/MW Amplifier .
RF/MW Oscillators- Basic topologies ,VCO, Quadrature and single sideband generators.
Radio frequency Synthesizers- PLLS, Various RF synthesizer architectures and frequency dividers .
Overview of RF Filter design, design of rectifier , detector , mixer , RF/MW control circuit. Small RF/MW antenna and
array .
RF/MW Integrated circuits - design and applications

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 M.Tech. - ECE (Microelectronics & VLSI Designs) Common Syllabus
(Paper codes Will be introduced latter)
Low Power VLSI Design
Introduction to low power VLSI design-Need for low power-CMOS leakage current-static current-Basic principles of
low power design-probabilistic power analysis-random logic signal-probability and frequency-power analysis
techniques-signal entropy.
Circuit - transistor and gate sizing - pin ordering - network restructuring and reorganization - adjustable threshold
voltages - logic-signal gating - logic encoding. Pre-computation logic.
Power reduction in clock networks - CMOS floating node - low power bus - delay balancing - SRAM.
Switching activity reduction - parallel voltage reduction - operator reduction -Adiabatic computation - pass transistor
logic
Low power circuit design style - Software power estimation - co design.
TEXT BOOKS
1. Gary Yeap "Practical Low Power Digital VLSI Design", 1997
2. Kaushik Roy , Sharat C. Prasad, "Low power CMOS VLSI circuit design", Wiley Inter science Publications".
(1987)

Micro and Nano Devices :

Prerequisite :

Fundamentals of semiconductor physics and basics of p-n junctions, bipolar transistors, JFETs, MOS capacitors,
MOSFETs, CMOS, LEDs, laser diodes, photodetectors, solar cells; low and high frequency equivalent circuits of BJTs
and MOSFETs, IC technology.

Course content :

Module-1 (14 lectures) – [Recapitulation of MOS scaling laws, Short channel effects, MOSFET models], Nano CMOS,
Effects of gate oxide tunneling, Concept of EOT, high-k dielectrics, Effects of nanoscaling on MOSFET characteristics
and performance, Technology trend, Advanced CMOS structures, SOI.

Module-2 (8 lectures) – Semiconductor heterojunctions; compound semiconductor and silicon-germanium

heterostuctures, superlattice, HBTs, PETs, MESFETs, advanced solar cell structures.

Module-3 (14 lectures) – Fundamental concepts of quantum structures and tunneling junctions, Nanotubes, Devices
based on quantum wells, quantum wires/nanotubes and quantum dots – HEMTs, RTDs, CNT MOSFETs, SETs,
Terahertz devices, advanced optoelectronic devices.

Module-4 (6 lectures) – Outline of nanofabrication – nanolithography, MBE, MOVPE; Introduction to molecular

electronics.

Outcome:
Familiarity with advanced structures, their relative merits and demerits, areas of application,

Text Books:
Ning & Taur
B.R.Nag
S. M. Sz e

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