SUD45P03-15

Siliconix

P-Channel 30-V (D-S), 150C MOSFET

Product Summary
VDS (V) rDS(on) (
) ID (A)a
0.015 @ VGS = 10 V
13
30
30

8

m
0.024 @ VGS = 4.5 V

o
.c
TO-252

4 U
G D
Top View
S
Drain Connected to Tab

e t
Order Number:
SUD45P03-15

h e D

P-Channel MOSFET

Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)

a S
Drain-Source Voltage
Parameter

a t Symbol

VDS
Limit

30

20
Unit

.D
Gate-Source Voltage VGS
TA = 25C
13
Continuous Drain Currentb ID
TA = 100C
8

w
A
Pulsed Drain Current IDM
100

w
Continuous Source Current (Diode Conduction) IS 13
TC = 25C 70
Maximum Power Dissipationb PD W

w
Operating Junction and Storage Temperature Range

Thermal Resistance Ratings

TA = 25C
TJ, Tstg
4a
55 to 150 C

.c
o m
4 U
Parameter Symbol Typical Maximum
et Unit

Maximum Junction-to-Ambientb RthJA 30

h e C/W
Maximum Junction-to-Case RthJC
S
1.8

a
Notes

a t
a. Calculated Rating for TA = 25C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings

.D
and Typical Characteristics).
b. Surface Mounted on FR4 Board, t  10 sec.

w
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267.

w
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com
S-57253Rev. F, 24-Feb-98
w
Siliconix was formerly a division of TEMIC Semiconductors
1-51
SUD45P03-15
Siliconix

Specifications (TJ = 25C Unless Otherwise Noted)

Parameter Symbol Test Condition Min Typa Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30

V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 125C 50
VDS = 5 V, VGS = 10 V 50
On State Drain Currentb
On-State ID(on)
D( ) A
VDS = 5 V, VGS = 4.5 V 20
VGS = 10 V, ID = 13 A 0.012 0.015
Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 13 A, TJ = 125C 0.018 0.026 W
VGS = 4.5 V, ID = 13 A 0.020 0.024
Forward Transconductance b gfs VDS = 15 V, ID = 13 A 20 S

Dynamica

Input Capacitance Ciss 3200

Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 800 pF
Reverse Transfer Capacitance Crss 280
Total Gate Chargec Qg 50 125
Gate-Source Chargec Qgs VDS = 15 V, VGS = 10 V, ID = 45 A 14 nC
Gate-Drain Chargec Qgd 6.2
Turn-On Delay Timec td(on) 13 20
Rise Timec tr VDD = 15 V, RL = 0.33 W 10 20
ns
Turn-Off Delay Timec td(off) ID ^ 45 A, VGEN = 10 V, RG = 2.4 W 50 100
Fall Timec tf 20 40

Source-Drain Diode Ratings and Characteristic (TC = 25C)

Pulsed Current ISM 100 A

Diode Forward Voltageb VSD IF = 45 A, VGS = 0 V 1.0 1.5 V
Source-Drain Reverse Recovery Time trr IF = 45 A, di/dt = 100 A/ms 55 100 ns

Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.

Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com
S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-52
 SUD45P03-15
Siliconix

Typical Characteristics (25C Unless Otherwise Noted)

Output Characteristics Transfer Characteristics


7V 6V
VGS = 10, 9, 8 V TC = 55C


 25C
I D Drain Current (A)

I D Drain Current (A)

5V
 125C



4V



3V
2V
 
   
       
VDS Drain-to-Source Voltage (V) VGS Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

 

TC = 55C
25C
 

rDS(on) On-Resistance (
)
g fs Transconductance (S)

VGS = 4.5 V
125C
 


 

VGS = 10 V

 


 
          
 

ID Drain Current (A) ID Drain Current (A)

Capacitance Gate Charge
 
VGS Gate-to-Source Voltage (V)

VDS = 15 V

ID = 45 A
Ciss
C Capacitance (pF)

  


 

Coss
Crss
 

 
            

VDS Drain-to-Source Voltage (V) Qg Total Gate Charge (nC)

Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com
S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-53
 SUD45P03-15
Siliconix

Typical Characteristics (25C Unless Otherwise Noted)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
 100
VGS = 10 V
ID = 45 A

rDS(on) On-Resistance ( W )

I S Source Current (A)

TJ = 150C
(Normalized)


TJ = 25C
10




 1


        0 0.3 0.6 0.9 1.2 1.5
TJ Junction Temperature (C) VSD Source-to-Drain Voltage (V)
Thermal Ratings
Maximum Drain Current vs.
Safe Operating Area
Ambiemt Temperature
 500

 100
Limited
I D Drain Current (A)
I D Drain Current (A)

by rDS(on)
 10, 100 ms
10
1 ms

10 ms
1
100 ms
 TA = 25C
Single Pulse 1s
dc
 0.1
       0.1 1 10 100
TA Ambient Temperature (C) VDS Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.02

0.05

Single Pulse
0.01
104 103 102 101 1 10 30
Square Wave Pulse Duration (sec)

Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com
S-57253Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-54