ANNEXURE I

University of Mumbai
FORMAT FOR SUBMISSION OF PROPOSAL FOR MINOR RESEARCH
PROJECT
Part A
1. Broad Subject: Design of HEMT Oscillator in X band used for
Satellite Communication
2. Area of Specialization: Microwave
3. Principal Investigator
(i) Name: Pandharkame Subodh N.
(ii) Sex (M/F): Male
(iii) Date of Birth: 01/02/1983
(iv) Qualification: M. Tech (EXTC)
(v) Designation: Assistant Professor
(vi) Address: Gharda Institute of Technology, Lavel, Khed, Ratnagiri.
Office: Gharda Institute of Technology, Lavel, Khed, Ratnagiri.
Residence: Gharda Institute of Technology, Lavel, Khed, Ratnagiri.
4. Co- Investigator (s)
(i) Name: Tathare S. S.
(ii) Sex: Male
(iii) Date of Birth: 11/07/1987
(iv) Qualification: M. tech (EXTC)
(v) Designation: Assistant professor
(vi) Address: Gharda Institute of Technology, Lavel, Khed,
Ratnagiri.
Office: Gharda Institute of Technology, Lavel, Khed, Ratnagiri.
Residence: Rawtale, chiplun, Ratnagiri.
 5. Name of the Institution where the project will be undertaken
(a) Department: Electronics and Telecommunication
(b) College / University: Gharda Institute of Technology, Lavel
6. Whether the College / University is approved under Section 2 (f) and 12
B of the UGC Act?
Yes
7. Teaching and Research Experience of Principal Investigator
(a) Teaching Experience UG 8 Years
PG NIL
(b) Research experience: NIL
(c) Whether the project has been approved by the University for the
Doctoral
Degree? If so, Please indicate: NA
i. Date of Registration
ii. Name and designation of the supervisor (Guide) approved by the
University.
iii. Name of the University where registered.
d) In case the teacher holds a Doctoral degree: NA
i. Title of the thesis
ii. Year of the award of degree
iii. Name of the University
(e) Publication
Papers Published: 01
Accepted: NIL
Communicated: NIL
Books Published: NIL
Accepted: NIL Communicated: NIL
 Part B
Proposed Research Work
8. (i) Project Title: Design of HEMT Oscillator in X band used for Satellite
Communication.
(ii) Introduction: Origin of the research problem:
In the recent area of satellite communications, high electron mobility
transistor (HEMT) technology has recently gained interest for low phase
noise oscillator design. The high breakdown voltage of GaN HEMT enables
high power handling capability. A high-thermal conductivity SiC substrate
increases reliability for high power operation. In oscillator applications, high
RF power reduces phase noise as a direct effect of improved signal to noise
ratio (SNR) according to Leesons equation. As phase noise is proportional
to RF power, Leesons equation is often used to normalize measured phase
noise to dc power consumption. However, the potential for low phase noise
would be better in a technology with higher DC-RF conversion efficiency,
e.g., GaN HEMT. A different circuit with low phase noise is intended with
architecture of a balanced Colpitts oscillator with class-C waveforms.
Interdisciplinary relevance:
The above mentioned oscillator design is relevant to all microwave X
band applications, like radar, terrestrial broadband, space communications,
amateur radio.
Review of Research and Development in the Subject:
Szhau Lai and his team proposed design of low phase noise oscillators
in GaN high electron mobility transistor (HEMT) technology. The design
starts from bias-dependent low-frequency (LF) noise measurements.
Oscillator topology and bias point are then chosen for operation in regions
where LF noise is low. The best LF noise properties are obtained for low
drain voltage and current. Thus, the low phase noise can be achieved at low
dc power which also means that power normalized phase noise figure of
merit (FOM) will be good. Two different oscillators have been designed and
measured. A 9.9 GHz common-gate balanced Colpitts oscillator operating in
class C presents a phase noise of 136 dBc/Hz@1 MHz [1].
Takuo Kashiwa and his team proposed design of V -band monolithic
high electron-mobility transistor (HEMT) oscillators. With regard to output
characteristics, double-hetero (DH) HEMT (especially with a high-density
Si-planar doped layer) are superior to single-hetero (SH) HEMTs. A
monolithic microwave integrated circuit (MMIC) oscillator has been
developed with a planar doped DH HEMT and has achieved the peak output
power of 11.1 dBm at a 55.9-GHz oscillation frequency. Phase noise of -85
dBc/Hz at 100-kHz offset and -103 dBc/Hz at 1-MHz offset have been
achieved at a drain voltage of 5.5 V and a gate voltage of 0 V. These
characteristics have been achieved without any buffer amplifiers or dielectric
resonators [2].
D. Schreurs and his team proposed two modeling aspects to improve
the accuracy of low phase-noise monolithic-microwave integrated-circuit
(MMIC) oscillator design. Up until now, the modeling of InP-based high
electron mobility transistors (HEMTs) has mainly been limited to the
representation of small-signal and thermal noise behavior. In this paper, we
present a scaleable nonlinear and bias-dependent low-frequency (LF) noise
model [3].
Corrado Florian and his team proposed the design of a -band
monolithic
microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO)
developed for space applications. The selected technology is a space-
 qualified GaAs 0.25- mpseudomorphic HEMT(pHEMT) process. The large-
signal technique adopted for the VCO design is also highlighted [4].
Szhau Lai and his team proposed design of a -band monolithic
microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO)
developed for space applications. The selected technology is a space-
qualified GaAs 0.25- mpseudomorphic HEMT (pHEMT) process. The large-
signal technique adopted for the VCO design is also highlighted [5].
Hang Liu and his team proposed oscillator design, based on GaN-on-
SiC high electron mobility transistor (HEMT) with 0.25 um gate length and
800um gate width, delivers 21 dBm output power when biased at Vgs=-3V
and Vdd=28V. Phase noise was measured to be -112 dBc/Hz at 100 kHz
offset and -135 dBc/Hz at 1 MHz offset from
7.9 GHz carrier, respectively [6].
Mikael Hrberg and his team proposed ultra-low phase-noise
oscillator based on a GaN HEMT monolithic microwave integrated circuit
reflection amplifier and an aluminum cavity resonator. It is experimentally
investigated how the oscillators phase noise depends on the cavity coupling
factor, phase matching, and bias condition of the reflection amplifier. For the
optimum bias and cavity position phase noise of 145 dBc/Hz and 160
dBc/Hz at offsets of 100 and 400 kHz, respectively, from a 9.9-GHz carrier
frequency[7].
(iii) Objectives
1. To study the existing microwave oscillators in L,S and C bands.
2. To design and simulate the oscillator in microwave X band.
3. To study the effects of X band design on fundamental parameters of
oscillator.
4. Methodology & Plan of Work:

Sr. No Month and Year Task to completed

1 August2015- Literature survey to understand the concept & the

September2015 research work already done in relevant area

2 September 2015- Literature survey to understand the concept & the

October 2015 research work already done in relevant area

4 October2015- Simulation of X band oscillator

December 2015

5 December2015- Implementation of X band oscillator in hardware

February 2016

6 February2016- March Testing of hardware and Report writing

2016

5. Conclusion:
The idea is to design a HEMT Oscillator in X band which will provide
less phase noise, higher conversion efficiency, and less losses, and will be
helpful for communication satellites.

REFERENCES:
1. Szhau Lai, Dan Kuylenstierna, Mustafa zen, Mikael Hrberg, Niklas
Rorsman, Iltcho Angelov, and Herbert Zirath, Low Phase Noise GaN
HEMT Oscillators with excellent Figures of Merit, IEEE MICROWAVE
AND WIRELESS COMPONENTS LETTERS, VOL. 24, NO. 6, JUNE 2014.
2. Takuo Kashiwa, Takao Ishida, Takayuki Katoh, Hitoshi Kurusu, Hiroyuki
Hoshi, and Yasuo Mitsui, -Band High-Power Low Phase-Noise Monolithic
 Oscillators and Investigation of Low Phase-Noise Performance at High
Drain Bias, IEEE TRANSACTIONS ON MICROWAVE THEORY AND
TECHNIQUES, VOL. 46, NO. 10, OCTOBER 1998.
3. D. Schreurs, H. van Meer, K. van der Zanden, W. De Raedt, B. Nauwelaers,
and A. Van de Capelle, Improved HEMT Model for Low Phase-Noise InP-
Based MMIC Oscillators, IEEE TRANSACTIONS ON MICROWAVE
THEORY AND TECHNIQUES, VOL. 46, NO. 10, OCTOBER 1998.
4. Corrado Florian, Pier Andrea Traverso, and Fabio Filicori, The Charge-
Controlled Nonlinear Noise Modeling Approach for the Design of MMIC
GaAs-pHEMT VCOs for Space Applications, IEEE TRANSACTIONS ON
MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 4, APRIL
2011.
5. Szhau Lai, Dan Kuylenstierna, Mikael Hrberg, Niklas Rorsman, Iltcho
Angelov , Kristoffer Andersson , and Herbert Zirath, Accurate Phase-Noise
Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator IEEE
TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL.
61, NO. 11, NOVEMBER 2013.
6. Hang Liu, Xi Zhu, Chirn Chye Boon, Xiang Yi, Mengda Mao, and Wanlan
Yang, Design of Ultra-Low Phase Noise and High Power Integrated
Oscillator in 0.25 um. GaN-on-SiC HEMT Technology, IEEE
MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 24, NO.
2, FEBRUARY 2014.
7. Mikael Hrberg, Thomas Emanuelsson, Szhau Lai, Thi Ngoc Do Thanh,
Herbert Zirath,, and Dan Kuylenstierna,, Phase-Noise Analysis of an X-
Band Ultra-Low Phase-Noise GaN HEMT Based Cavity Oscillator, IEEE
TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES.
6. Details of collaboration, If any intended
9. Financial Assistance required ( Budget):

Sr. No. Details Estimated Expenditure

1. PCB 9,200 /-

2. Networking Simulating Software 55,000 /-

3. HFSS v15 CAD Software 1 USER LICENCE 1,28,000 /-

4 Contingency & Local travel 5,600 /-

5. satellite wi-fi Receiver 1,00,000 /-

Total: 2,97,800/-

10. Whether the teacher has received support for the research project from the
UGC under Major, Minor, and scheme of support for research or from any
agency? If so, please indicate NO

(i) Name of the agency from which the assistance was approved
(ii) Sanction letter No and date under which the assistance was approved
(iii) Amount approved and utilized
(iv) Title of the project for which assistance was approved
(v) In case the project was completed, whether the work on the project has
been published
(vi) If the candidate was working for the doctoral degree, whether the thesis
was submitted and accepted by the University for the Award of degree.
(A summary of the report/ thesis in about 1,000 words may please be
attached with the application)
 (vii) If the project has not been completed , please state the reasons
11. (a) Details of the project/ scheme completed or ongoing with the PI
(b) List of facilities that will be extended to the investigator (s) by
implementing institution

Name of the Year Started Total Equipment/ Infrastructural

agency Completed facilities obtained

(c) Available equipment & accessories to be utilized for the project.

1. Agilent Make Vector Network Analyzer up to 4 GHz.
2. PC for simulation
12. Any other information which the investigator may like to give in support of
this proposal which may be helpful in evaluating.
To certify that
(a) The University / College is approved under Section 2 (f) and 12- B of the
UGC Act and is fit to receive grants from the UGC
(b) General physical facilities, such as furniture/ space etc. are available in the
Department/ college
(c) I/we shall abide by the rules governing the scheme in case assistance is
provided to me/us from the UGC for the above project.
(d) I/we shall complete the project within the stipulated period. If I/we fail to
do so and if the UGC is not satisfied with the progress of the research project,
the Commission may terminate the project immediately and ask for the refund of
the amount received by me/us
(e) The above research project is not funded by any other agency
Name & Signature (a) Principal Investigator
 Mr. Pandharkame S. N.

(b) Co- Investigator

Mr. Tathare S. S.

(c) Principal

Dr. Kadam P. S.
(Signature with Seal)

UNIVERSITY OF MUMBAI
Minor Research proposal (2015-16)
Sr No Particulars Information

1. Principal Investigator
Name Pandharkame S. N.

E- mail ID.-snpandharkame@git-india.edu.in

Office Ph. No. 02356262795

 Mobile No.-9421160282
Co- Investigator
Name Tathare S. S.

E- mail ID.-sstathare@git-india.edu.in

Office Ph. No. 02356262795

Mobile No.- 9422570804

2 Name of college Gharda Institute Of Technology
3 Program Engineering
4 Title of the Project Design of HEMT Oscillator in X band used for
Satellite Communication

List of Paper Published

Sr. No Title of Paper Date Location

1 Improving the return loss 3 March International Journal of

of microstrip patch 2015 engineering and computer
antenna using AMC science. ISSN:2319-7242