Order this document by MC33154/D

 
  
  
 
 
The MC33154 is specifically designed as an IGBT driver for high powered SINGLE IGBT HIGH CURRENT
applications including ac induction motor control, brushless dc motor control,
and uninterruptable power supplies. This device also offers a cost effective
GATE DRIVER
solution for driving power MOSFETS and Bipolar transistors.
Device protections include the choice of desaturation or overcurrent SEMICONDUCTOR
sensing and an undervoltage lockout to provide assurance of proper gate TECHNICAL DATA
drive voltage.
These devices are available in dualinline and surface mount packages
and include the following features:

High Current Output Stage: 4.0 A Source 2.0 A Sink

Protection Circuits for Both Conventional and Sense IGBTs
Current Source for Blanking Timing
8
Protection Against OverCurrent and Short Circuit 1

UnderVoltage Lockout Optimized for IGBTs

P SUFFIX
Negative Gate Drive Capability PLASTIC PACKAGE
CASE 626

Simplified Block Diagram

8
1

Short Circuit D SUFFIX

VCC
Short Circuit Comparator PLASTIC PACKAGE
Latch CASE 751
Fault S VCC (SO8)
Output 7 Q
R OverCurrent
Current
OverCurrent Comparator
Sense
VEE Latch 130 mV 1 Input
S
Q
R 65 mV PIN CONNECTIONS
VEE
VCC VCC Kelvin
VCC Gnd
2
VCC 1.0 mA
6
Current Sense Fault Blanking/
Fault 1 8
Input Desaturation Input
VEE 8 Blanking/
Desaturation
3 Desat./Blank. 6.5 V Input Kelvin Gnd 2 7 Fault Output
VEE
VEE Comparator
VEE 3 6 VCC
VCC
Gate Drive
VCC Output Input 4 5
Stage Output

Gate
Input Drive (Top View)
4 VCC 5 Output
Under
Voltage
VEE Lockout
VEE VEE ORDERING INFORMATION
Tested Operating
12 V/ Device Temperature Range Package
11 V
MC33154D TA = 40 to +85C Plastic SO8
MC33154P TA = 40 to +85C Plastic DIP8

This document contains information on a new product. Specifications and information herein Motorola, Inc. 1997 Rev 1
are subject to change without notice. 1
MOTOROLA ANALOG IC DEVICE DATA
 MC33154
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
VCC to VEE; VEE KGND VCC VCC VEE 20
Kelvin Ground to VEE (Note 1) KGnd VEE 20
Input Vin VEE 0.3 to VCC V
Current Sense Input VCS 0.3 to VCC V
Fault Blanking/Desaturation Input VBD 0.3 to VCC V
Gate Drive Output IO A
Source Current 4.0
Sink Current 2.0
Diode Clamp Current 1.0
Fault Output IFO mA
Source Current 25
Sink Current 10
Power Dissipation and Thermal Characteristics
D Suffix SO8 Package, Case 751
Maximum Power Dissipation @ TA = 50C PD 0.56 W
Thermal Resistance, JunctiontoAir RJA 180 C/W
P Suffix DIP8 Package, Case 626
Maximum Power Dissipation @ TA = 50C PD 1.0 W
Thermal Resistance, JunctiontoAir RJA 100 C/W
Operating Junction Temperature TJ 150 C
Operating Ambient Temperature TA 40 to +85 C
Storage Temperature Range Tstg 65 to +150 C
NOTES: 1. Kelvin Ground must always be between VEE and VCC.
2. ESD data available upon request.

ELECTRICAL CHARACTERISTICS (VCC = 20 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values
TA = 25C, for min/max values TA is the operating ambient temperature range that applies [Note 1] unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
INPUT
Input Threshold Voltage V
High State (Logic 1) @ TA = 25C VIH 9.0 10.5
High State (Logic 1) @ TA = 40 to +85C 11.6
Low State (Logic 0) VIL 4.5 7.0
Input Current High State (VIH = 10.5 V) IIH 100 500 A
Input Current Low State (VIL = 4.5 V) IIL 50 100
GATE DRIVE OUTPUT
Output Voltage V
Low State (ISink = 1.0 A) VOL 2.0 2.5
High State (ISource = 2.0 A) VOH 17 18
Output PullDown Resistor RPD 100 200 k
FAULT OUTPUT
Output Voltage V
Low State (ISink = 5.0 mA) VFL 0.2 1.0
High State (ISource = 20 mA) VFH 17 18.3
SWITCHING CHARACTERISTICS
Propagation Delay (50% Input to 50% Output CL = 15 nF) ns
Logic Input to Drive Output Rise tPLH (in/out) 200 300
Logic Input to Drive Output Fall tPHL (in/out) 120 300
Drive Output Rise Time (10% to 90%) CL = 15 nF tr 80 200 ns
Drive Output Fall Time (90% to 10%) CL = 15 nF tf 80 200 ns
Propagation Delay s
Current Sense Input to Drive Output tP(OC) 0.4 1.0
NOTE: 1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = 40C for MC33154 Thigh = +85C for MC33154

2 MOTOROLA ANALOG IC DEVICE DATA

 MC33154
ELECTRICAL CHARACTERISTICS (continued) (VCC = 20 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values
TA = 25C, for min/max values TA is the operating ambient temperature range that applies [Note 1] unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit

SWITCHING CHARACTERISTICS
Fault Blanking/Desaturation Input to Drive Output tP(FLT) 0.4 1.0
UVLO
Startup Voltage VCC start 11.3 12 12.6 V
Disable Voltage VCC dis 10.4 11 11.7 V
COMPARATORS
Over Current Trip Voltage (VPin8 > 7.0 V) VSOC 50 65 80 mV
Short Current Trip Voltage (VPin8 > 7.0 V) VSSC 100 130 160 mV
Desaturation Threshold (VPin1 > 100 mV) Vth(FLT) 6.0 6.5 7.0 V
Sense Input Current (VSI = 0 V) ISI 1.4 10 mA
FAULT BLANKING/DESATURATION INPUT
Current Source (VPin8 = 0 V, VPin4 10.5 V) Ichg 0.8 1.0 1.2 mA
Discharge Current (VPin8 = 15 V, VPin4 = 0 V) Idschg 0.8 2.5 mA
TOTAL DEVICE
Power Supply Current ICC mA
Standby (VPin 4 = 0 V, Output Open) 9.0 14
Operating (CL = 15 nF, fin = 20 kHz) 15 25
NOTE: 1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = 40C for MC33154 Thigh = +85C for MC33154

Figure 1. Input Current versus Logic Input Voltage Figure 2. Output Voltage versus Input Voltage
200 20
180 18 TA = 25C
160 16 VCC = 20 V
VO , OUTPUT VOLTAGE (V)
I in , INPUT CURRENT ( mA)

140 14
120 12
100 10
80 8.0
60 6.0
40 TA = 25C 4.0
20 VCC = 20 V 2.0
0 0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12
Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V)

MOTOROLA ANALOG IC DEVICE DATA 3

 MC33154

Figure 3. Input Threshold Voltage Figure 4. Input Thresholds versus Temperature

versus Supply Voltage
V IL, V IH, INPUT THRESHOLD VOLTAGE (V)
10 12

V IH, V IL, INPUT THRESHOLD VOLTAGE (V)

9.5 11 VCC = 20 V
VIH
9.0 10
TA = 25C
8.5 9.0

8.0 8.0
VIH
7.5 7.0
VIL
7.0 6.0
VIL
6.5 5.0
6.0 4.0
14 15 16 17 18 19 20 60 40 20 0 20 40 60 80 100 120 140
VCC, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (C)

Figure 5. Drive Output Low State Voltage Figure 6. Drive Output Low State Voltage
versus Temperature versus Sink Current
2.5 2.0
VOL, OUTPUT LOW STATE VOLTAGE (V)

VOL, OUTPUT LOW STATE VOLTAGE (V)

1.8
2.0 ISink = 1.0 A 1.6
1.4 TA = 25C
ISink = 500 mA VCC = 20 V
1.5 1.2
1.0
1.0 ISink = 250 mA 0.8
0.6
0.5 0.4
VCC = 20 V 0.2
0 0
60 40 20 0 20 40 60 80 100 120 140 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TA, AMBIENT TEMPERATURE (C) Isink, OUTPUT SINK CURRENT (A)

Figure 7. Drive Output High State Voltage Figure 8. Output Saturation High
versus Temperature versus Output Current
VOH , DRIVE OUTPUT HIGH STATE VOLTAGE (V)

VOH , DRIVE OUTPUT HIGH STATE VOLTAGE (V)

19.2 20
19.0 ISource = 500 mA TA = 25C
19 VCC = 20 V
18.8
18.6 ISource = 1.0 A
18
18.4
18.2
17
18.0
ISource = 2.0 A
17.8 16
17.6 VCC = 20 V
17.4 15
60 40 20 0 20 40 60 80 100 120 140 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TA, AMBIENT TEMPERATURE (C) IO, OUTPUT CURRENT (A)

4 MOTOROLA ANALOG IC DEVICE DATA

 MC33154

Figure 9. Drive Output Voltage Figure 10. Fault Output Voltage

versus Current Sense Input Voltage versus Current Sense Input Voltage
20 20
18 18

V FO , FAULT OUTPUT VOLTAGE (V)

VO , DRIVE OUTPUT VOLTAGE (V)

TA = 25C TA = 25C
16 VCC = 20 V 16 VCC = 20 V
14 14
12 12
10 10
8.0 8.0
6.0 6.0
4.0 4.0
2.0 2.0
0 0
50 55 60 65 70 75 80 100 105 110 115 120 125 130 135 140
VS, CURRENT SENSE INPUT VOLTAGE (mV) VS, CURRENT SENSE INPUT VOLTAGE (mV)

Figure 11. Overcurrent Threshold Voltage Figure 12. Short Circuit Threshold Voltage

VSSC , SHORT CIRCUIT THRESHOLD VOLTAGE (mV)

V SOC , OVERCURRENT THRESHOLD VOLTAGE (mV)

versus Temperature versus Temperature

80 160

75 150

70 140

65 130

60 120

55 110

50 100
60 40 20 0 20 40 60 80 100 120 140 60 40 20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C)

Figure 13. Sense Input Current versus Figure 14. Output Voltage versus
Sense Voltage Blanking/Desaturation Voltage
0.2 20
18
VO , DRIVE OUTPUT VOLTAGE (V)
ISI, SENSE INPUT CURRENT ( m A)

0
16 TA = 25C
0.2 VCC = 20 V
14
TA = 25C
0.4 12
10
0.6 8.0
0.8 6.0
4.0
1.0
2.0
1.2 0
0 2.0 4.0 6.0 8.0 10 12 14 16 6.30 6.35 6.40 6.45 6.50 6.55 6.60 6.65 6.70
VS, CURRENT SENSE INPUT (V) VBD, BLANKING/DESATURATION INPUT (V)

MOTOROLA ANALOG IC DEVICE DATA 5

 MC33154

Figure 15. Desaturation Threshold Figure 16. Blanking/Desaturation Threshold

versus Temperature versus Supply Voltage

Vth(FLT) , FAULT BLANKING/DESATURATION

7.0 6.520
Vth(FLT) , FAULT BLANKING/DESATURATION

6.9 6.515
TA = 25C

THRESHOLD VOLTAGE (V)

THRESHOLD VOLTAGE (V)

6.8
6.510
6.7
6.6 6.505

6.5 6.500
6.4 6.495
6.3
6.490
6.2
6.1 6.485
6.0 6.480
60 40 20 0 20 40 60 80 100 120 140 12 13 14 15 16 17 18 19 20
TA, AMBIENT TEMPERATURE (C) VCC, SUPPLY VOLTAGE (V)

Figure 17. Blanking Current Source Figure 18. Blanking Current versus Supply Voltage
versus Temperature
0.80 1.20
0.85 1.15
Ichg , CURRENT SOURCE (mA)

Ichg , CURRENT SOURCE (mA)

0.90 1.10
0.95 1.05
1.00 1.00
TA = 25C
1.05 0.95 VBD = 20 V
1.10 0.90

1.15 0.85
1.20 0.80
60 40 20 0 20 40 60 80 100 120 140 12 13 14 15 16 17 18 19 20
TA, AMBIENT TEMPERATURE (C) VCC, SUPPLY VOLTAGE (V)

Figure 19. Blanking Current versus Figure 20. Blanking Discharge Current versus
Blanking/Desaturation Voltage Blanking/Desaturation Voltage
1.5 6.0
Idschg, DISCHARGE CURRENT (mA)

1.0 5.0
Ichg, CURRENT SOURCE (mA)

TA = 25C
TA = 25C 4.0 VCC = 20 V
0.5
VCC = 20 V
3.0
0
2.0
0.5
1.0
1.0
0
1.5 1.0
2.0 2.0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VBD, FAULT BLANKING/DESATURATION INPUT (V) VBD, FAULT BLANKING/DESATURATION INPUT (V)

6 MOTOROLA ANALOG IC DEVICE DATA

 MC33154

Figure 21. Fault Output Voltage Low versus Figure 22. Fault Output Voltage High versus
Fault Output Current Fault Output Current
0.40 20.0

VOH , HIGH STATE OUTPUT VOLTAGE (V)

VOL, LOW STATE OUTPUT VOLTAGE (V)

0.35 TA = 25C 19.8

VCC = 20 V 19.6 TA = 25C
0.30 VCC = 20 V
19.4
0.25 19.2
0.20 19.0

0.15 18.8
18.6
0.10
18.4
0.05 18.2
0 18.0
0 2.0 4.0 6.0 8.0 10 0 5.0 10 15 20
Ifo, FAULT OUTPUT SOURCE CURRENT (mA) Ifo, FAULT OUTPUT SOURCE CURRENT (mA)

Figure 23. UVLO Start Threshold Figure 24. Standby Supply Current versus
versus Temperature Supply Voltage
12.5 10
9.0
VCCstart , STARTUP VOLTAGE (V)

VCC start ICC , SUPPLY CURRENT (mA)

12.0 8.0
7.0
11.5 6.0 TA = 25C
VCC dis
5.0
11.0 4.0
3.0
10.5 2.0
1.0
10.0 0
60 40 20 0 20 40 60 80 100 120 140 0 5.0 10 15 20
TA, AMBIENT TEMPERATURE (C) VCC, SUPPLY VOLTAGE (V)

Figure 25. Supply Current versus Input Frequency

40

35
Cload = 15 nF
ICC , SUPPLY CURRENT (mA)

TA = 25C
30 VCC = 20 V
25
20

15 Cload = 10 nF
10
Cload = 1.0 nF
5.0
0
1.0 10 100
fin, INPUT FREQUENCY (kHz)

MOTOROLA ANALOG IC DEVICE DATA 7

 MC33154
OPERATING DESCRIPTION
GATE DRIVE While IGBTs exhibit a fixed minimum loss due to minority
Controlling Switching Times carrier recombination, a slow gate drive will dominate the
The most important design aspect of an IGBT gate drive is turnoff losses. This is particularly true for fast IGBTs. It is
optimization of the switching characteristics. Switching also possible to turnoff an IGBT too fast. Excessive turnoff
characteristics are especially important in motor control speed will result in large overshoot voltages. Normally the
applications in which PWM transistors are used in a bridge turnoff resistor is a small fraction of the turnon resistor.
configuration. In these applications, the gate drive circuit The MC33154 has a bipolar totem pole output. The output
components should be selected to optimize turnon, turnoff, stage is capable of sourcing 4.0 amps and sinking 2.0 amps
and offstate impedance. peak. The output stage also contains a pull down resistor to
A single resistor may be used to control both turnon and ensure that the IGBT is off when the gate drive power is not
turnoff and shown in Figure 26. However, the resistor value applied.
selected must be a compromise in turnon abruptness and In a PWM inverter, IGBTs are used in a halfbridge
turnoff losses. Using a single resistor is normally suitable configuration. Thus, at least one device is always off. While
only for very low frequency PWM. the IGBT is in the offstate it will be subjected to changes in
voltage caused by the other devices. This is particularly a
problem when the opposite transistor turns on.
Figure 26. Using a Single Gate Resistor
When the lower device is turned on clearing the upper
diode, the turnon dv/dt of the lower device appears across
VCC
IGBT the collector emitter of the upper device. To eliminate
shootthrough currents it is necessary to provide a low sink
Rg impedance to the device in the offstate. Fortunately, the
Output
turnoff resistor can be made small enough to hold off the
5
device under commutation without causing excessively fast
turnoff speeds.
Sometimes a negative bias voltage is used in the
VEE Kelvin Gnd
offstate. This is a practice carried over from bipolar
2
Darlington drives. A negative bias is generally not required
for IGBTs. However, a negative bias will reduce the possibility
of shootthrough. The MC33154 has separate pins for VEE
An optimized gate drive output stage is shown in Figure 27. and Kelvin Gnd. This permits operation using a +15/5 volt
This circuit allows turnon and turnoff to be optimized supply.
separately.
INTERFACING WITH OPTOISOLATORS
Figure 27. Using Separate Resistors
Isolated Input
for TurnOn and TurnOff
The MC33154 may be used with an optically isolated
VCC input. The optoisolator can be used to provide level shifting
IGBT
Ron and if desired, isolation from AC line voltages. An optoisolator
with a very high dv/dt capability should be used, such as the
Output HewlettPackard HCPL0453. The IGBT gate turnon
Doff Roff
5 resistor should be set large enough to ensure that the optos
dv/dt capability is not exceeded. Like most optoisolators, the
HCPL0453 has an active low opencollector output. Thus,
VEE Kelvin Gnd when the LED is ON, the output will be low. The MC33154
2 has a noninverting input pin to interface directly with an
optoisolator using a pull up resistor.

Optoisolator Output Fault

The turnon resistor Ron provides control over the IGBT
turnon speed. In motor control circuits, the resistor sets the
turnon di/dt that controls how fast the freewheel diode is
cleared. The interaction of the IGBT and freewheeling diode
determines the turnon dv/dt.
Excessive turnon dv/dt is a common problem in
halfbridge circuits.
The turnoff resistor Roff controls the turnoff speed and
ensures that the IGBT remains off under commutation
stresses. Turnoff is critical to obtain low switching losses.
The MC33154 has an active high fault output. The fault
output may be easily interfaced to an optoisolator. While it is
important that all faults are properly reported, it is equally
important that no false signals are propagated. Again a high
dv/dt optoisolator should be used.
The LED drive provides a resistor programmable current
of 10 to 20 mA when on and provides a low impedance path
when off.

8 MOTOROLA ANALOG IC DEVICE DATA

 MC33154
An active high output, resistor, and small signal diode
provide an excellent LED driver. This circuit is shown in
Figure 28.
Figure 28. Output Fault Optoisolator
Short Circuit
Latch Output VCC
Q 8
7 6.5 V
VEE VEE
UNDER VOLTAGE LOCK OUT
It is desirable to protect an IGBT from insufficient gate
voltage. IGBTs require 15 V on the gate to guarantee device
saturation. At gate voltages below 13 V, the on state voltage
increases dramatically, especially at higher currents. At very
lower gate voltages, below 10 V, the IGBT may operate in the
linear region and quickly overheat. Many PWM motor drives
use a bootstrap supply for the upper gate drive. The UVLO
provides protection for the IGBT in case the bootstrap
capacitor discharges.
The MC33154 will typically start up at about 12 V. The
UVLO circuit has about 1.0 volt of hysteresis. The UVLO will
disable the output if the supply voltage falls below about 11 V.
PROTECTION CIRCUITRY
Desaturation Protection
Bipolar Power circuits have commonly used what is known
as Desaturation Detection. This involves monitoring the
collector voltage and turning off the device if the collector
voltage rises above a certain limit. A bipolar transistor will
only conduct a certain amount of current for a given base
drive. When the base is overdriven the device is in saturation.
When the collector current rises above the knee, the device
pulls out of saturation.
The maximum current the device will conduct in the linear
region is a function of the base current and hfe of the
transistor.
The output characteristics of an IGBT are similar to a
Bipolar device. However the output current is a function of
gate voltage, not current. The maximum current depends on
the gate voltage and the device. IGBTs tend to have a very
high transconductance and a much higher current density
under a short circuit than a bipolar device.
Motor control IGBTs are designed for a lower current
density under shorted conditions and a longer short circuit
survival time.
The best method for detecting desaturation is the use of a
high voltage clamp diode and a comparator. The MC33154
has a desaturation comparator which senses the collector
voltage and provides an output indicating when the device is
not full saturated. Diode D1 is an external high voltage diode
with a rated voltage comparable to the power device. When
the IGBT is ON and saturated, diode D1 will pull down the
voltage on the desaturation input. When the IGBT is OFF or
pulls out of saturation, the current source will pull up the
MOTOROLA ANALOG IC DEVICE DATA
voltage on the desaturation input. The voltage reference is
set to about 6.5 V. This will allow a maximum ONvoltage of
about 5.0 V.
Figure 29. Desaturation Detection Using a Diode
VCC
VCC
Desaturation
Comparator 1.0 mA D1
Kelvin VEE
Gnd
Kelvin
Gnd
A fault exists when the gate input is high and VCE of the
IGBT is greater than the maximum allowable VCE(sat).The
output of the desaturation comparator is ANDed with the gate
input signal and fed into the Short Circuit (SC) latch. The SC
latch will turnoff the IGBT for the remainder of the cycle
when a fault is detected. When the input is toggled low, the
latch will reset. The reference voltage is tied to the Kelvin
Ground instead of the V EE to make the threshold
independent of negative gate bias.
The MC33154 also features a programmable turnon
blanking time. During turnon the IGBT must clear the
opposing free wheeling diode. The collector voltage will
remain high until the diode is cleared. Once the diode has
been cleared the voltage will come down quickly to the
VCE(sat) of the device. Following turnon there is normally
considerable ringing on the collector due to the Coss of the
IGBTs and the parasitic wiring inductance.
The error signal from the desaturation signal must be
blanked out sufficiently to allow the diode to be cleared and
the ringing to settle out.
The blanking function uses an NPN transistor to clamp the
comparator input when the gate input is low. When the input
is switched high, the clamp transistor will turnoff, and the
current source will charge up the blanking capacitor. The time
required for blanking capacitor to charge up from the
onvoltage of the clamp FET to the trip voltage of the
comparator is the blanking time.
If a short circuit occurs after the IGBT is turned on and
saturated, the delay time will be the time required for the
current source to charge up the blanking capacitor from the
VCE(sat) to the trip voltage of the comparator.
Sense IGBT Protection
Another approach to protecting the IGBTs is to sense the
emitter current using a current shunt or Sense IGBTs.
This method has the advantage of being able to use high
gain IGBTs which do not have any inherent short circuit
capability.
Current sense IGBTs work as well as current sense
MOSFETs in most circumstances. However, the basic
problem of working with very low sense voltages still exists.
Sense IGBTs sense current through the channel and are
therefore linear concerning collector current.
B e c a u s e I G B Ts h a v e a v e r y l o w i n c r e m e n t a l
onresistance, sense IGBTs behave much like lowon
resistance current sense MOSFETs. The output voltage of a
9
 MC33154
properly terminated sense IGBT is very low, normally less connected to Gnd. The input optoisolator, however, should
than 100 mV. be referenced to VEE.
The sense IGBT approach requires a blanking time to
prevent false tripping during turnon. The sense IGBT also Figure 31. Dual Supply Application
requires that the sense signal is ignored while the gate is low.
15 V
This is because the mirror normally produces large transient
voltages during both turnon and turnoff due to the collector
to mirror capacitance.
6
A low resistance current shunt may also be used to sense
VCC Desat/ 8
the emitter current. A very low resistance shunt (5.0 m to 7 Blank
50 m) must be used with high current IGBTs. The output Fault 5
Output
voltage of a current shunt is also very low.
When the output is an actual short circuit the inductance MC33154
1
will be very low. Since the blanking circuit provides a fixed 4 Sense
Input
minimum ontime the peak current under a short circuit may VEE Gnd
2
be very high. A short circuit discern function may be 3
implemented using a second comparator with a higher trip
voltage.
This circuit can distinguish between an overcurrent and a
shorted output condition. Under an actual short circuit the die
temperature may get very hot. When a short circuit is
5.0 V
detected the transistor should be turnedoff for several
milliseconds to cool down before the device is turned back If Desaturation protection is desired as shown in Figure
on. 32, a h i g h v o l t a g e d i o d e i s c o n n e c t e d t o t h e
The sense circuit is very similar to the Desaturation circuit. Desaturation/Blanking pin. The blanking capacitor should be
The MC33154 uses a combination circuit that provides connected from the Desaturation pin to the VEE pin. If a dual
protection for both Short Circuit capable IGBTs and Sense supply is used the blanking capacitor should be connected to
IGBTs. the Kelvin Gnd.
Because desaturation protection is used in this example,
APPLICATION EXAMPLES the sense input should be tied high. The MC33154 design
ANDs the output of the overcurrent comparators with the
The simplest gate drive circuit using the MC33154 is output of the desaturation comparator, allowing the circuit
shown in Figure 30. The optoisolator requires a pull up designer to choose either type of protection.
resistor. This resistor value should be set to bias the output Although the reverse voltage on collector of the IGBT is
transistor at the desired current. A decoupling capacitor clamped to the emitter by the free wheeling diode, there is
should be placed close to the IC to minimize switching noise. normally considerable inductance within the package itself. A
A bootstrap diode may be used to for a floating supply. If small resistor in series with the diode may be used to protect
the protection features are not used, then both the the IC from reverse voltage transients.
desaturation input and the current sense input should be
grounded.
Figure 32. Desaturation Application
When used with a single supply the Kelvin Gnd and VEE
pins should be connected. Separate resistors are 18 V
recommended for turnon and turnoff.

Figure 30. Basic Application 6

7 VCC Desat/ 8
18 V Fault Blank

MC33154
5
Output
6
1
VCC Desat/ 8 Sense
4
7 Blank Input 2
Fault 5 VEE Gnd
Output 3
MC33154
1
4 Sense
Input
2
VEE Gnd When using sense IGBTs or a sense resistor, as shown in
3 Figure 33, the sense voltage is applied to the current sense
input. The sense trip voltages are referenced to the Kelvin
Gnd pin. The sense voltage is very small, typically about 65
When used with a dual supply as shown in Figure 31, the mV, and sensitive to noise.
Gnd pin should be Kelvin connected to the emitter of the Therefore, the sense and ground return conductors should
IGBT. If the protection features are not used, then both the be routed as a differential pair. An RC filter is useful in filtering
desaturation input and the current sense input should be any high frequency noise. A blanking capacitor is connected

10 MOTOROLA ANALOG IC DEVICE DATA

 MC33154
from the blanking pin to VEE. The stray capacitance on the Figure 33. Sense IGBT Application
blanking pin provides a very small level of blanking if left
open. 18 V
The blanking pin should not be grounded when using
current sensing. That would disable the overcurrent sense.
The blanking pin should never be tied high. That would short 6
out the internal IC clamp transistor. 7 VCC Desat/ 8
Fault Blank
5
Output

MC33154
1
Sense
4
Input 2
VEE Gnd
3

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MOTOROLA ANALOG IC DEVICE DATA 11

 MC33154

OUTLINE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 75105 NOTES:
A D ISSUE S 1. DIMENSIONING AND TOLERANCING PER ASME
C Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
8 5 PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
E H 0.25 M B M PROTRUSION. ALLOWABLE DAMBAR
1 PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
4 OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.

h X 45 _ MILLIMETERS
B q DIM MIN MAX
e A 1.35 1.75
A1 0.10 0.25
A B 0.35 0.49
C C 0.18 0.25
SEATING D 4.80 5.00
PLANE
E 3.80 4.00
L e 1.27 BSC
0.10 H 5.80 6.20
h 0.25 0.50
A1 B L 0.40 1.25
q 0_ 7_
0.25 M C B S A S

P SUFFIX
NOTES:
8 5
PLASTIC PACKAGE 1. DIMENSION L TO CENTER OF LEAD WHEN
CASE 62605 FORMED PARALLEL.
ISSUE K 2. PACKAGE CONTOUR OPTIONAL (ROUND OR
B SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
1 4 Y14.5M, 1982.

MILLIMETERS INCHES
STYLE 1: DIM MIN MAX MIN MAX
F PIN 1. AC IN A 9.40 10.16 0.370 0.400
2. DC + IN B 6.10 6.60 0.240 0.260
NOTE 2 A 3. DC IN C 3.94 4.45 0.155 0.175
L 4. AC IN D 0.38 0.51 0.015 0.020
5. GROUND F 1.02 1.78 0.040 0.070
6. OUTPUT G 2.54 BSC 0.100 BSC
7. AUXILIARY H 0.76 1.27 0.030 0.050
8. VCC
C J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC
T J M 10_ 10_
SEATING N N 0.76 1.01 0.030 0.040
PLANE
M
D K
H G
0.13 (0.005) M T A M B M

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12 MC33154/D
MOTOROLA ANALOG IC DEVICE DATA
This datasheet has been downloaded from:

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