2SC2412K / 2SC4081 / 2SC4617 /

Transistors 2SC5658 / 2SC1740S

General purpose transistor (50V, 0.15A)

2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S

!Features !External dimensions (Units : mm)

1) Low Cob.
2SC2412K 2SC4081 2SC4617
Cob=2.0pF (Typ.)

(1)

0.2
(1)

0.65 0.65
0.95 0.95
(1)

2.0
1.3
2) Complements the 2SA1037AK /

1.9

(2)

0.5 0.5
(3)

1.0
1.6
0.3
(2)
0.4

(2)

(3)
(3)

0.3
2SA1576A / 2SA1774H / 1.25

0.2
1.6 0.8
2.1

2SA2029 / 2SA933AS. 2.8

0.2
1.6

0.15

0.15
0.9
0.7

0.55
0.7
0.15

1.1
0.8

0~0.1

0~0.1
0.1Min. 0.1Min.
0~0.1

0.3Min.

!Structure Each lead has same dimensions Each lead has same dimensions
ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter
Epitaxial planar type ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base
JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector
NPN silicon transistor JEDEC : SOT-346 (3) Collector
Abbreviated symbol: B* Abbreviated symbol: B*
Abbreviated symbol: B*

2SC5658 2SC1740S
40.2 20.2
1.2
0.2 0.8 0.2

30.2

3Min.
0.32

0.4 0.4
1.2

0.8

(2)
(3)
(1) (15Min.)
0.22

0.45+0.15
0.05
0.5
0.13
0~0.1

0.15Max.
2.5 +0.4
0.1 0.5 0.45 +0.15
0.05
5

(1) (2) (3)

(1) Base (1) Emitter

ROHM : VMT3 (2) Emitter ROHM : SPT (2) Collector
(3) Collector EIAJ : SC-72 (3) Base

Abbreviated symbol: B*

* Denotes hFE

!Absolute maximum (Ta=25C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 7 V
Collector current IC 0.15 A
2SC2412K, 2SC4081 0.2
Collector power
dissipation 2SC4617, 2SC5658 PC 0.15 W
2SC1740S 0.3
Junction temperature Tj 150 C
Storage temperature Tstg 55~+150 C
 2SC2412K / 2SC4081 / 2SC4617 /
Transistors 2SC5658 / 2SC1740S
!Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 V IC=50A
Collector-emitter breakdown voltage BVCEO 50 V IC=1mA
Emitter-base breakdown voltage BVEBO 7 V IE=50A
Collector cutoff current ICBO 0.1 A VCB=60V
Emitter cutoff current IEBO 0.1 A VEB=7V
DC current transfer ratio hFE 120 560 VCE=6V, IC=1mA
Collector-emitter saturation voltage VCE(sat) 0.4 V IC/IB=50mA/5mA
Transition frequency fT 180 MHz VCE=12V, IE=2mA, f=100MHz
Output capacitance Cob 2 3.5 pF VCE=12V, IE=0A, f=1MHz

!Packaging specifications and hFE

Package Taping Bulk
Code T146 T106 TL T2L TP
Basic ordering
3000 3000 3000 8000 5000
Type hFE unit (pieces)
2SC2412K QRS
2SC4081 QRS
2SC4617 QRS
2SC5658 QRS
2SC1740S QRS

hFE values are classified as follows :

Item Q R S
hFE 120~270 180~390 270~560

!Electrical characterristic curves

0.50mA
50 100 10
VCE=6V Ta=25C mA 30A
0.45 A Ta=25C
COLLECTOR CURRENT : IC (mA)

0.40m
COLLECTOR CURRENT : IC (mA)

27A
COLLECTOR CURRENT : IC (mA)

20 0.35mA
80 8 24A
10 0.30mA
21A
5 0.25mA
60 6 18A
25C
Ta=100C

0.20mA
55C

2 15A
0.15mA 12A
40 4
1
0.10mA 9A
0.5 6A
20 2
0.05mA
0.2 3A
0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( ) characteristics ( )
 2SC2412K / 2SC4081 / 2SC4617 /
Transistors 2SC5658 / 2SC1740S
500

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

500 0.5
Ta=25C VCE=5V Ta=25C
Ta=100C

0.2
DC CURRENT GAIN : hFE

25C

DC CURRENT GAIN : hFE

200 VCE=5V 200
3V 55C
1V IC/IB=50
0.1 20
100 100 10

0.05
50 50

0.02
20 20

10 10 0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig. 6 Collector-emitter saturation
collector current ( ) collector current ( ) voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

IC/IB=10 0.5
IC/IB=50 Ta=25C

TRANSITION FREQUENCY : fT (MHz)

VCE=6V
500
0.2 Ta=100C
0.2
25C
Ta=100C 55C
0.1 25C 0.1
55C 200
0.05 0.05

0.02 100
0.02

0.01 0.01
50
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)

Fig.7 Collector-emitter saturation Fig.8 Collector-emitter saturation Fig.9 Gain bandwidth product vs.
voltage vs. collector current ( ) voltage vs. collector current () emitter current
BASE COLLECTOR TIME CONSTANT : Ccrbb' (ps)

20 Ta=25C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25C f=32MHZ
200
EMITTER INPUT CAPACITANCE : Cib (pF)

f=1MHz VCB=6V
IE=0A
10 Cib IC=0A
100

5
50

2 20
Co
b

1 10

0.2 0.5 1 2 5 10 20 50 0.2 0.5 1 2 5 10

COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (mA)

EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Collector output capacitance vs. Fig.11 Base-collector time constant
collector-base voltage vs. emitter current
Emitter input capacitance vs.
emitter-base voltage
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