DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ17
NPN 1 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFQ17

DESCRIPTION PINNING
NPN transistor in a SOT89 plastic PIN DESCRIPTION
envelope intended for application in
Code: FA
thick and thin-film circuits. The
1 emitter page
transistor has extremely good
intermodulation properties and a high 2 collector
power gain. 3 base

1 2 3

Bottom view MBK514

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage open emitter 40 V
VCEO collector-emitter voltage open base 25 V
ICM peak collector current 300 mA
Ptot total power dissipation up to Ts = 145 C (note 1) 1 W
fT transition frequency IC = 150 mA; VCE = 15 V; f = 500 MHz; 1.5 GHz
Tj = 25 C
Cre feedback capacitance IC = 10 mA; VCE = 15 V; f = 1 MHz; 1.9 pF
Tamb = 25 C

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 40 V
VCER collector-emitter voltage RBE 50 40 V
VCEO collector-emitter voltage open base 25 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 150 mA
ICM peak collector current f > 1 MHz 300 mA
Ptot total power dissipation up to Ts = 145 C (note 1) 1 W
Tstg storage temperature 65 150 C
Tj junction temperature 175 C

Note
1. Ts is the temperature at the soldering point of the collector tab.

September 1995 2
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFQ17

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

Rth j-s thermal resistance from junction to up to Ts = 145 C (note 1) 30 K/W
soldering point

Note
1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS
Tj = 25 C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 20 V; Tj = 50 C 20 A
VCE sat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA 0.5 V
hFE DC current gain IC = 150 mA; VCE = 5 V 25 80
Cc collector capacitance IE = ie = 0; VCB = 15 V; f = 1 MHz 4 pF
Cre feedback capacitance IC = 10 mA; VCE = 15 V; 1.9 pF
f = 1 MHz; Tamb = 25 C
fT transition frequency IC = 150 mA; VCE = 15 V; 1.5 GHz
f = 500 MHz
GUM maximum unilateral power gain IC = 60 mA; VCE = 15 V; 16 dB
(note 1) f = 200 MHz; Tamb = 25 C
IC = 60 mA; VCE = 15 V; 6.5 dB
f = 800 MHz; Tamb = 25 C

Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log -------------------------------------------------------------
2 2
- dB.
1 S 11 1 S 22

September 1995 3
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFQ17

MBB365 MBB828
160 10
handbook, halfpage handbook, halfpage
Cc
(pF)
h FE
8
120

80

40
2

0 0
0 100 200 0 10 20 30 40
I C (mA) V CB (V)

VCE = 5 V; Tj = 25 C. IE = ie = 0; f = 1 MHz; Tj = 25 C.

Fig.2 DC current gain as a function of collector Fig.3 Collector capacitance as a function of

current. collector-base voltage.

MBB364
2
handbook, halfpage
fT
(GHz)
1.6

1.2

0.8

0.4

0
0 40 80 120 160
I C (mA)

VCE = 15 V; f = 500 MHz; Tj = 25 C.

Fig.4 Transition frequency as a function of

collector current.

September 1995 4
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFQ17

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

D B

b3

E
HE

L
1 2 3

b2 c

w M b1

e1

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

L
UNIT A b1 b2 b3 c D E e e1 HE w
min.
1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25
mm 3.0 1.5 0.8 0.13
1.4 0.35 0.40 1.4 0.37 4.4 2.4 3.75

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT89 97-02-28

September 1995 5
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFQ17

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 6
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