DISCRETE SEMICONDUCTORS

DATA SHEET

BFG16A
NPN 2 GHz wideband transistor
Product specification 1995 Sep 12
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFG16A

FEATURES PINNING
High power gain PIN DESCRIPTION fpage 4

Good thermal stability 1 emitter

Gold metallization ensures 2 base
excellent reliability.
3 emitter
4 collector
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope. 1 2 3

It is primarily intended for use in Top view MSB002 - 1

wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes. Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter 40 V
VCEO collector-emitter voltage open base 25 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 110 C; note 1 1 W
hFE DC current gain IC = 150 mA; VCE = 5 V; Tj = 25 C 25 80
fT transition frequency IC = 100 mA; VCE = 10 V; 1.5 GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; 10 dB
f = 500 MHz; Tamb = 25 C
Note
1. Ts is the temperature at the soldering point of the collector tab.

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 40 V
VCEO collector-emitter voltage open base 25 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 110 C; note 1 1 W
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C

Note
1. Ts is the temperature at the soldering point of the collector tab.

1995 Sep 12 2
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFG16A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction up to Ts = 110 C; note 1 40 K/W
to soldering point

Note
1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS
Tj = 25 C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown open emitter; IC = 0.1 mA 25 V
voltage
V(BR)CEO collector-emitter breakdown open base; IC = 10 mA 18 V
voltage
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 3 V
ICBO collector cut-off current IE = 0; VCB = 28 V 20 A
hFE DC current gain IC = 150 mA; VCE = 5 V 25 80
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 2.5 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 10.0 pF
Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz 1.5 pF
fT transition frequency IC = 100 mA; VCE = 10 V; 1.5 GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; 10 dB
note 1 f = 500 MHz; Tamb = 25 C

Note
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB.
( 1 s 11 2 ) ( 1 s 22 2 )

1995 Sep 12 3
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFG16A

MBG198 MBB365
1.2 160
handbook,
P halfpage handbook, halfpage
tot
(W)
1.0 h FE

120
0.8

0.6 80

0.4

40
0.2

0 0
0 50 100 150 200 0 100 I C (mA) 200
T s ( o C)

VCE = 10 V; Tj = 25 C.

Fig.3 DC current gain as function of

Fig.2 Power derating curve. collector current.

MBB363 MBB364
5 2
handbook, halfpage handbook, halfpage
C re fT

(pF) (GHz)
4 1.6

3 1.2

2 0.8

1 0.4

0 0
0 4 8 12 16 20 0 40 80 120 160
VCB (V) I C (mA)

IC = ic = 0; f = 1 MHz. VCE = 10 V; f = 500 MHz; Tamb = 25 C.

Fig.4 Feedback capacitance as function of Fig.5 Transition frequency as a function of

collector-base voltage. collector current.

1995 Sep 12 4
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFG16A

50
handbook, full pagewidth
25 3 GHz
100

10 250

+j
10 25 50 100 250
0
j

10 40 MHz 250

25 100

MBB366
50

IC = 70 mA; VCE = 15 V; Zo = 50 .

Fig.6 Common emitter input reflection coefficient (S11).

90 o
handbook, full pagewidth
120 o 60 o

40 MHz

150 o 30 o

50 40 30 20 10
180 o 0o
3 GHz

150 o 30 o

120 o 60 o

90 o MBB367

IC = 70 mA; VCE = 15 V.

Fig.7 Common emitter forward transmission coefficient (S21).

1995 Sep 12 5
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFG16A

90 o
handbook, full pagewidth
120 o 60 o

150 o 30 o
3 GHz

0.5 0.4 0.3 0.2 0.1

180 o 0o
40 MHz

150 o 30 o

120 o 60 o

90 o MBB368

IC = 70 mA; VCE = 15 V.

Fig.8 Common emitter reverse transmission coefficient (S12).

50
handbook, full pagewidth
25 100

10 3 GHz 250

+j
10 25 50 100 250
0
j

40 MHz 250
10

25 100

MBB369
50

IC = 70 mA; VCE = 15 V; Zo = 50 .

Fig.9 Common emitter output transmission coefficient (S22).

1995 Sep 12 6
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFG16A

PACKAGE OUTLINE

handbook, full pagewidth 0.95

0.85

S seating plane 0.1 S

6.7
0.32 6.3
0.24 B
3.1
2.9 0.2 M A

4
A

0.10
0.01
3.7 7.3
3.3 6.7

16 o 16
o
max

1 2 3

10 o
1.80 max 0.80
max 2.3 0.60 0.1 M B
(4x)
MSA035 - 1
4.6

Dimensions in mm.

Fig.10 SOT223.

1995 Sep 12 7
Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFG16A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Sep 12 8