SUD50N03-06AP

New Product Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

D TrenchFETr Power MOSFET
VDS (V) rDS(on) (
) ID (A)a, e Qg (Typ) D Optimized for LowSide Synchronous
0.0057 @ VGS = 10 V 90 Rectifier Operation RoHS
30
0.0078 @ VGS = 4.5 V 77
30 D 100% Rg Tested COMPLIANT

APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
TO-252
D

G
Drain Connected to Tab

G D S

Top View S

Ordering Information: SUD50N03-06APE3 (Lead (Pb)-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20

TC = 25_C 90a, e
TC = 70_C 75a, e
Continuous Drain Current (TJ = 175_C) ID
TA = 25_C 30b, c
TA = 70_C 25b, c
A
Pulsed Drain Current IDM 100
TC = 25_C 55a, e
Source Drain Diode Current
Continuous Source-Drain IS
TA = 25_C 6.7b, c
Avalanche Current Pulse IAS 45
L=0
0.1
1 mH
Single Pulse Avalanche Energy EAS 101 mJ
TC = 25_C 83
TC = 70_C 58
Maximum Power Dissipation PD W
TA = 25_C 10b, c
TA = 70_C 7b, c
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t p 10 sec RthJA 12 15
_C/W
Maximum Junction-to-Case Steady State RthJC 1.5 1.8
Notes:
a. Based on TC = 25_C.
b. Surface mounted on 1 x 1 FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 50_C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.

Document Number: 73540 www.vishay.com

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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 30 V

VDS Temperature Coefficient VDS/TJ 25

ID = 250 A mV/_C
VGS(th) Temperature Coefficient VGS(th)/TJ 6.3
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.2 2.4 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS A
A
VDS = 30 V, VGS = 0 V, TJ = 55_C 10
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 50 A

VGS = 10 V, ID = 20 A 0.0046 0.0057

Drain-Source On-State Resistancea rDS(on)

VGS = 4.5 V, ID = 20 A 0.0062 0.0078
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 70 S

Dynamicb
Input Capacitance Ciss 3800

Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 615 pF

p
Reverse Transfer Capacitance Crss 305
VDS = 15 V, VGS = 10 V, ID = 30 A 62 95
Total Gate Charge Qg
30 45
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID= 25 A 11
Gate-Drain Charge Qgd 9
Gate Resistance Rg f = 1 MHz 0.9 1.4

Turn-On Delay Time td(on) 12 18
Rise Time tr VDD = 15 V, RL = 0.5
10 15
Turn-Off Delay Time td(off) ID ^ 30 A, VGEN = 10 V, Rg = 1
30 45
Fall Time tf 8 12
ns
Turn-On Delay Time td(on) 26 40
Rise Time tr VDD = 15 V, RL = 0.6
230 345
Turn-Off Delay Time td(off) ID ^ 25 A, VGEN = 4.5 V, Rg = 1
25 40
Fall Time tf 9 14

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS TC = 25_C 55c
A
Pulse Diode Forward Currenta ISM 100
Body Diode Voltage VSD IS = 6.7 A 0.9 1.5 V
Body Diode Reverse Recovery Time trr 65 100 ns
Body Diode Reverse Recovery Charge Qrr 38 60 nC
IF = 6
6.7
7AA, di/dt = 100 A/s
A/s, TJ = 25_C
Reverse Recovery Fall Time ta 50
ns
Reverse Recovery Rise Time tb 15

Notes
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Calculated based on maximum junction temperature. Package limitation current is 50 A.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 73540

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

100 20

VGS = 10 V thru 4 V
80 16
I D Drain Current (A)

I D Drain Current (A)

TC = 55_C

60 12
TC = 25_C

40 8 TC = 125_C

3V
20 4

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS Drain-to-Source Voltage (V) VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.015 5000

Ciss
4000
rDS(on) On-Resistance (
)

0.012
C Capacitance (pF)

0.009 3000
VGS = 4.5 V

0.006 2000

VGS = 10 V
0.003 1000 Coss

Crss
0.000 0
0 20 40 60 80 100 0 5 10 15 20 25

ID Drain Current (A) VDS Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.9
ID = 20 A
1.7
8
rDS(on) On-Resistance

1.5 VGS = 4.5 V

(Normalized)

6 VDS = 15 V
VGS (V)

VGS = 10 V
1.3
VDS = 24 V
4
1.1

2
0.9

0 0.7
0 13 26 39 52 65 50 25 0 25 50 75 100 125 150 175

Qg (nC) TJ Junction Temperature

Document Number: 73540 www.vishay.com

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage rDS(on) vs VGS vs. Temperature
100.000 0.05

10.000 0.04

rDS(on) On-Resistance (
)

TJ = 150_C
I S Source Current (A)

1.000 0.03

TJ = 25_C
0.100 0.02

125_C
0.010 0.01

25_C

0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10

VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

2.3 600

2.1
500
1.9
ID = 250 A
1.7 400
VGS(th) (V)

Power (W)

1.5
300
1.3

1.1 200

0.9 TA = 25_C
100
Single Pulse
0.7

0.5 0
50 25 0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TJ Temperature (_C) Time (sec)

Safe Operating Area

1000
*Limited by rDS(on)

100
10 s
100 s
10
1 ms
ID (A)

10 ms
1 100 ms
1s
10s
0.10 100s
DC

0.01 TA = 25_C
Single Pulse

0.001
0.1 1 10 100
VDS (V)
*VGS u minimum VGS at which rDS(on) is specified

www.vishay.com Document Number: 73540

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Current De-Rating Power De-Rating

100 90

80

70
75
60
Drain Current (A)

50

Power
50
40
Limited by Package
30
25
20

10

0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

TC Case Temperature (_C) TC Case Temperature (_C)

Document Number: 73540 www.vishay.com

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
0.5 Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
104 103 102 101 1 10 100 1000
Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case

1
Duty Cycle = 0.5
Normalized Effective Transient

0.5
Thermal Impedance

0.2

0.1
0.1 Single Pulse
0.05

0.02

0.01
104 103 102 101 1
Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73540.

www.vishay.com Document Number: 73540

6 S52237Rev. A, 24-Oct-05
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1