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how to crack GATE/IES/BARC

tell you the ways of cracking the exams like GATE,IES,BARC,ISRO and others and also how to
crack interviews.....in most easiest way...so be a part of this..and ask as many doubts as you
can...it will you plus others also...and it will helpful for me also..thankyou

Tuesday, 31 January 2017

Electronic Devices and Circuits(EDC)


Hello everyone, in last blog I told about Signal and Systems...

Now before beginning Electronics Devices and Circuits.. .give 2-4 hrs of time for revision of Signal and
System..revise notes,solve questions which you won't able to solve in first attempt..and important topics
which you find difficult to understand..so give a quick look to all these ..

Now we will begin our next subject i.e EDC,,

Study it from :-

notes(coaching or self)
Millman Halkias
Sedra and Smith
Previous year Gate,IES questions
kannodia (for few formulas)
Integrated Ciruits (only main topics)
Start with basic knowledge ..as this subject is just apriori for Analog electronics..by reading EDC we get
basic knowledge ...

What you have to study;-

About temperatures values(Room,Ambient,Absolute)


Thermal Voltage
Band Gap(Forbidden voltage)
Conductivity,resistivity,mobility
Intrinsic Semiconductor (intrinsic concentration)
Silicon and Germanium Semiconductor( their atomic no.,weight,band gap..etc)
p-type ,n-type semiconductor(band diagram)
Fermi Voltage
Drift and Diffusion Current(metals have only drift current,semiconductor have
diffusion current ..how to produce drift current from semiconductor)
Generation,recombination of electron and hole pair.
Continuity equation(read from Millman Halkias)
Fermi Energy for n-type,p-type,intrinsic,prob. of electron at particular energy(equation)
Temperature variation for conductivity(mainly for extrinsic semiconductor),carrier
concentration
LED,LCD,Photodiode,Avalanche-photodiode,Zener diode,Solar cell,Ge-Si diode,Ga-
As diode,Laser,varactor diode
Diffusion capacitance(forward bias),transition or depletion capacitance(reverse
bias),formulae of capacitance
P-N Diode(methods of fabrication),forward bias voltage,reverse bias
voltage,working,Holes and electron movement,minimum conductivity,charge
distribution in depletion region,derivation of open circuit voltage,relation between
open circuit voltage,electric field and depletion width,junction law,difference
between depletion voltage,cut-in voltage and diode voltage..their values for Si and Ge
semiconductor,how to convert p-type into n-type and vice-versa(amphoteric materials)
Why turn-ff time is more than turn-on time...or reverse recovery time is more than
forward recovery time..
Hall effect..hall voltage..what we can know from hall effect,,
Thermal excitation,intrinsic excitation,extrinsic excitation
BJT-CE,CC,CB-V-I diagram for input and output..PNP transistor or NPN transistor
working (internal mechanism),transit time,carrier lifetime,emitter gain,propagation
constant,current gain(relation),alpha,beta,gamma,early voltage,early effect,base width
modulation,output resistance
Relation of Beta with temperature.
FET-junction type,depletion type,enhancement type(internal diagram,working),MOS
capacitor(internal diagram),pinch off voltage,condition for saturation,current
formulae,transconductance and resistance formulae,difference between depletion and
enhancement.,relation between Vgs cutoff and pinch off voltage,threshold voltage-
benefit of it,ways of reducing it,difference between N-type and P-type,amplification
factor,why poysilicon is used..thickness formula,,relation between resistance and
thickness...
Why there is break line in symbol of enhancement FET,channel length
modulation,output resistance,how to avoid breakage of channel.
Why BJT is used in active mode and FET in saturation for amplifier?
Thyristor family(just basic knowledge)
Integrated circuits-fabrication method..why inductor can't fabricated..ways of fabricating
resistance,diode,capacitor,bjt,fet..Lithography,dry and wet oxidation,ion implantation
method..its benefits,complimentary error function profile.
Note:-
Read Diode,BJT,FET from Millman..just basic knowledge ..internal diagram..working.
Focus on depletion region of diode..read from Sedra and Smith..in beginning it is given how to find no.
of charges in depletion region.. read abrupt junction,working of thyristor..
In junction FET why the depletion region has that different shape..why channel is more narrow at
drain side?
Read basics because its knowledge is needed in Analog electronics.

Best of Luck ..prepare well..if have any doubt then do comment..

Next Subject we are going to take is Communication System..

( if find helpful then follow by email option on right side)

Abhishek Gupta at 08:26

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4 comments:

PIYUSH DABRA 6 February 2017 at 11:52


Sir which book to be preferred for opamps?
Reply

Replies

Abhishek Gupta 12 February 2017 at 07:12


opamp is easy topic..you can read it from sedra and smith or millman halkias..refer any
book for it..main is the input output curve for opamp..else is normal

Reply

Deep anika 20 March 2017 at 23:49


Sir this time IIT Gawhati is giving gate paper....so what type of questions we may expect.....
Reply

Unknown 31 May 2017 at 18:45


sir is it necessary to read std ref book bcz i took coaching frm ace academy i have ace notes with
me..
Reply
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