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Semiconductor Doping
Extrinsic (Doped) silicon
contains small amounts of impurities. Typical doping levels
are 1018 cm-3 - 1019cm-3.
N-type ( e.g doping with 15P)
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Semiconductor Doping
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Semiconductor Doping
Group III impurities have 3 valence
electrons they accept a VB electron
from the crystal: e.g. boron, gallium,
indium.
Acceptor Impurities -
a valence band electron is accepted by the impurity leaving
a weakly bound VB hole, i.e. only a small energy is needed
to move this hole into the VB.
This is called ptype because the extra hole is a positive carrier
p = NA + n NA for NA >> n. (A = acceptor) np = ni2
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Current Flow in Semiconductors
Two distinctly different mechanisms contribute to
current flow in semiconductor
Drift current
Current flow due to the presence of electric field in the
semiconductor
= +
= = +
is conductivity
=
is resistivity
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Current Flow in Semiconductors
Diffusion current
Current flow due to concentration gradient of dopants in
semiconductor
= +
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PN Junctions
PN Junctions
When ntype and ptype semiconductors are brought together, they form
a PN Junction.
To start with, we will consider the case at Thermal Equilibrium, where
there is no applied voltage bias or light or temperature.
Diffusion Current consists of majority charge carriers moving from one
side of the junction to the other due to a concentration gradient.
In PN junctions, electrons will diffuse from the ntype region to the p-
type region while holes move from the ptype to ntype material.
Donor atoms are fixed and cannot diffuse.
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PN Junctions
PN Junctions
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PN Junctions
In addition to diffusion current, drift current also exists due to
the minority carriers being swept through the depletion region.
Normally, the drift current is very small unless the carrier
concentration is increased due to temperature, optical generation
or injection of carriers.
Under equilibrium conditions, the diffusion current equals the
drift current for both electron and holes. Therefore, the net
current is zero.
The barrier voltage, Vo , across the pn junction can shown to be
given by
=
Typically, for silicon at room temperature, Vo is in the range of
0.6V to 0.9V.
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PN Junctions
Width of and charge stored in the depletion region depend on
acceptor and donor concentrations in P and N silicon,
respectively.
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PN Junctions
The magnitude of the charge on either sides of the junction is the
same, and therefore
=
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PN Junctions
Open circuited PN junction ( ID= Is)
=
= +
= + ( + )
<
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PN Junctions
Forward biased PN junction
= + ( )
= +
LP is diffusion length of holes in the n material
Ln is diffusion length of electrons in the p material
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PN Junctions
The depletion layer narrows and the depletion barrier
voltage reduces. Thus, the diffusion current increases.
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PN Junctions
The concentration of injected holes ( minority carriers) is
highest at the edge of the depletion region and can be
related to the forward voltage as ( law of the junction)
( ) = ( )
= +
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Reverse Bias Breakdown
Two possible breakdown mechanisms
Zener breakdown
It occurs when the electric field in the depletion layer
increases to the point of breaking covalent bonds and
generating electron-hole pairs
Once it occurs, large current can be obtained without any
increase in reverse biasing voltage
Avalanche breakdown
Reverse bias increases the electric field at the junction.
Increasing electric field in depletion region will increase
force with which carriers collide with lattice atoms.
At a certain critical energy, the collision between the carrier
and the atoms ionises the atom ( removes a carrier, such that
it is free). This is called impact ionisation.
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Reverse Bias Breakdown
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Diodes as Voltage Limiter
Diodes can be used to fix a voltage as shown in these
two diagrams of a diode and zener diode.
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Bipolar Junction Transistors (BJTs)
A bipolar junction transistor is a three terminal device which
consists of two pnjunctions. A simplified cross-section is
simply two backtoback pn junctions.
The actual cross section of the device would look more like:
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Bipolar Junction Transistors (BJTs)
The key to the operation of a BJT is that the central region is
thin enough such that minority carriers can cross the base,
allowing the emitter and collector to communicate.
Thin enough base layer is to allow transmission of minority
carriers without recombination.
BJTs are extensively used in many applications including
both analogue circuits and digital ICs.
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Bipolar Junction Transistors (BJTs)
Depending on the biasing of the two junctions, the device can
be operating in one of three basic modes:
Active mode (one junction forward biased and one reverse biased): If
EB is forward biased, called forward active. If other way around
called reverse active. Transistor acts like a current controlled
constant current source. Most commonly used mode of operation.
Saturation (both junctions forward biased): Not many applications
actually use the saturation mode intentionally, but in many circuits
the transistors enter the saturation region while switching between
active and cutoff.
Cutoff (both junctions reverse biased): no current flows in the
transistor.
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Forward Active Mode
The basecollector junction is reverse biased and has a strong
electric field across it which will sweep any minority carriers
reaching the BC junction into the collector.
In the collector, the carriers are majority carriers and the
collector current will be the number of minority carriers
injected into the base at the EB junction which make it
across the base.
Because there are not many carriers recombining in the base
region, the base current will be small.
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Forward Active Mode
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Forward Active Mode
= ( + )
= ( + )
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Graphical Representation: I-V
Characteristics
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Ebers-Moll Model of BJT
Ideal D.C. properties of a transistor result in terminal
properties which can be described by the EbersMoll
equations:
IE IC
IB
= + =
+ (
)
= + =
+ (
)
= ( + )
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Base-Width Modulation
From the VCE-IC characteristics in the active region, Ic is
increases with VCE. When extrapolated, the characteristic lines
meet at a point on the negative VCE axis at VCE= -VA.
This voltage is called Early Voltage, and typically ranges from
10V-100V.
=
+ (
)
=
+ (
)
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Base-Width Modulation
At a given value of VBE, increasing VCE increases the reverse-
bias voltage on the collector base junction and thus increases
the width of the depletion region of this junction.
+
= =
=
+
= =
=
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MOS Field Effect Transistors
A MOSFET consists of two back to back diodes.
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MOS Field Effect Transistors
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MOS Field Effect Transistors
The threshold voltage (VT) is the minimum voltage to create an
inversion layer under the gate.
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MOS Field Effect Transistors
As VD is further increased, the voltage in the semiconductor
surrounding the drain also increases. Therefore, the voltage
where VG - VD= VT moves further away from the drain, into
the channel.
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Enhancement and Depletion Mode: MOSFET
Inversion is defined as the condition at which the device has
the same number of carriers as the substrate, but of opposite
polarity.
The chart on the next page shows how the threshold voltage
determines whether a MOSFET is depletion or enhancement
mode based on the type of charge carrier in the channel.
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Enhancement and Depletion Mode: MOSFET
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