ECE 3102 ELECTRONICS DEVICES & CIRCUITS QUIZ 1

NAME: ______________________________________________________ SCORE:_____________

TEST 1. Name the following electronic and electrical sysmbols below.

1. 2. 3. 4. 5.

6. 7. 8. 9. 10.

TEST 2. Multiple Choice. Answer the following by shading the [] corresponding to the letter of the correct answer.
STRICTLY NO DOUBLE SHADING. Use BLACK or BLUE PEN.
1. a[] b[] c[] d[] 2. a[] b[] c[] d[] 3. a[] b[] c[] d[] 4. a[] b[] c[] d[] 5. a[] b[] c[] d[]
6. a[] b[] c[] d[] 7. a[] b[] c[] d[] 8. a[] b[] c[] d[] 9. a[] b[] c[] d[] 10. a[] b[] c[] d[]
11. a[] b[] c[] d[] 12. a[] b[] c[] d[] 13. a[] b[] c[] d[] 14. a[] b[] c[] d[] 15. a[] b[] c[] d[]

1. A pn junction diode act as a _________ switch.

a. unidirectional b. bidirectional 10. N-type semiconductor is obtained by doping silicon
c. controlled d. SPST with
2. When a small amount of impurity is added in pure a. Germanium b. Boron
semiconductor, this process is called c. Aluminum d. Phosphorus
a. Diffusion b. Doping 11. When a positive dc voltage is applied to he n-side
c. Conduction d. Accepting relative to p-side, a diode is said to be given a
3. The majority carriers for a p-type semiconductors a. forward bias b. reverse bias
are c. zero bias d. neutral bias
a. Electrons b. Holes 12. The term bias means
c. Impurity ions d. nucleus a. the ratio of majority carriers to minority carriers
4. The impurities having five valence elecrons is called b. the amount of current across a diode
a. acceptor impurities b. donor impurities c. a dc voltage is applied to control the operation of
c. both (a) and (b) d. neither (a) nor (b) a device
5. It is the minimum reverse voltage of p-n junction d. neither (a), (b), nor (c)
breakdown with sudden rise of reverse current. 13. When a diode is forward-biased,
a. Breakdown voltage b. Knee voltage a. the only current is hole current
c. PIV d. Breakover voltage b. the only current is electron current
6. Thermal voltage is given by the equation c. the only current is produced by majority carriers
d. the current is produced by both holes & electrons
a. = b. =
14. The dynamic resistance can be important when a
c. =
d. = diode is
7. At normal temperature, the termal volatge for silicon a. reverse-biased b. forward-biased
diode is c. in reverse breakdown d. unbiased
a. 0.02 V b. 0.026V c. 0.32 V d. 0.7 V 15. The V-I curve for a diode shows
8. Typical value of forbidden energy gap in Ge is a. the voltage across the diode for a given current
a. 0.67 eV b. 1.4 eV c. 10 eV d. 1 eV b. the amount of current for a given bias voltage
9. The maximum number of electrons in a valence shell c. the power dissipation
a. 1 b. 8 c. 4 d. 16 d. none of these
TEST 3. PROBLEM SOLVING. Solve the following problems on the space provided. Use extra sheets as scratch paper.

1. Solve for the current . Calculations:

2. Solve for and . Calculations:

3. Solve for and . Calculations:

4. Solve for and . Calculations:

5. Solve and sketch the output. Calculations:

6. Analyze the faulty circuit below. Identify the Calculations:

fault. Show calculation.