SEMICONDUCTOR DEVICES FOR 5th SEMESTER B.E.

ASSIGNMENT – I
(27 August, 2016)

1. Find the Miller indices for the following two planes.

2. Calculate the densities of Si and GaAs from the lattice constants, atomic weights, and Avogadro's number
as given below.
Si: lattice constant = 5.43x10-8 cm and there are 8 atoms/cell.
GaAs: lattice constant = 5.65x10-8 cm and there are 4 each Ga, As atoms/cell
Atomic weights of Si, Ga, and As are 28.1, 69.7 and 74.9 respectively.
Avogadro's number = 6.02x1023 per mole

3. Find the number of atoms/cm2 on the (100) surface of a Si wafer. Assume that Si has fcc lattice with lattice
constant of 5.43 Å.

4. A sample of radioactive material undergoes decay such that the number of atoms N(t) remaining in the
unstable state at time 't' is related to the number N o at t = 0 by the relation N(t) =N oexp(-t/τ). Show that τ is
the average lifetime <t> of an atom in the unstable state before it spontaneously decays. Use the method used
for diffusion length calculation.

5. Find the Fermi level position in n-type Si with respect to the intrinsic level at room temperation if the
equilibrium electron concentration no = 1016/cm3 and ni = 1.5x 1010/cm3.

6. A Si sample with 10 16/cm3 donors is optically excited such that 10 19/cm3 electron-hole pairs are generated
per second uniformly in the sample. At the same time laser causes the sample to heat up to 450K. Find the
quasi-Fermi levels and the change in conductivity of the sample due to optical absorption. Electron and hole
lifetimes are both 10 μs, Dp = 12 cm2/s, Dn = 36 cm2/s, ni = 1014/cm3 at 450K.

7. An n-type Si sample at 300K with N d = 1015/cm3 is steadily illuminated such that g op = 1021 EHP/cm3.s. If
τn = τp = l μs for this excitation, calculate the separation between the quasi-Fermi levels, (F n – Fp). Assume
that the intrinsic carrier density ni = 1.5x1010/cm3.