Beruflich Dokumente
Kultur Dokumente
4. (i) Derive an expression for the concentration of electron in the conduction band of
an intrinsic Semiconductor.
5. (ii) Write the necessary theory, describe the method of determining the band gap of
an intrinsic Semiconductor. DERIVATION
EXPERIMENTAL SET UP
6. Derive an expression for density of holes in the valance band of P type semiconductor.
7. Derive an expression for density of electronsin the conduction band of n type
semiconductor.
8. (i) What is Hall Effect? Give the theory of Hall Effect and hence justify how Hall
coefficient depends on the doping concentration. Describe an experimental set up to
determine the Hall Co efficient.
(iii) A sample of silicon is doped with 1023phosphorous atom/m3. Find the Hall voltage
in a sample with thickness = 100μm, Current Ix =1 mA and magnetic field B =0.1
Wb/m2(Assume electron Mobility, μ = 0.07 m2/V.S)
9.(i) Draw the B-H curve for a Ferro magnetic material and explain the same on the basis
of domain theory
(ii)Differentiate between hard and soft magnetic materials.
10. With neat sketch explain preparation, structure, properties and applications of ferrites.
11.explain dia ,para and ferromagnetic
12.Distinguish between type I and type II superconductors.
13. ii)Explain the following applications of superconductors. (a) SQUID (b) Cryotron.
14. i) Explain in detail high Tc superconductors with examples.
(ii) Write a note on isotopic effect.
15. Derive an expression for local field in a dielectric material and hence deduce
Clausius –Mosotti equation.
16.(i) Give a detailed discussion on the various types of dielectric breakdown in
dielectric material.
(ii) What are the remedies to avoid breakdown mechanism?
17. Derive an expression for ionic and electronic polarization in dielectric material.